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2022 IEEE Photonics Society Summer Topicals Meeting Series (SUM)最新文献

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Radiative Carrier Lifetime in GeSn Mid-Infrared Emitters GeSn中红外辐射载体寿命
Pub Date : 2022-07-01 DOI: 10.1109/SUM53465.2022.9858226
G. Daligou, S. Assali, A. Attiaoui, É. Bouthillier, O. Moutanabbir
A theoretical framework based on the eight-band k.p formalism and the envelope function approximation (EFA) formalism is developed to investigate the luminescence properties of GeSn alloys. Using this framework, the steady-state radiative carrier lifetimes of Ge0.83 Sn0.17 samples are estimated in the ns order over the 4–80 K temperature range.
建立了基于八波段kp形式和包络函数近似(EFA)形式的理论框架来研究GeSn合金的发光性能。利用该框架,估算了Ge0.83 Sn0.17样品在4-80 K温度范围内的稳态辐射载流子寿命,其数量级为ns。
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引用次数: 0
Terahertz Kerr microscopy using a SrTiO3 sensor 使用SrTiO3传感器的太赫兹克尔显微镜
Pub Date : 2022-07-01 DOI: 10.1109/SUM53465.2022.9858197
F. Blanchard, J. E. Nkeck, S. Zibod, Knsenia Dolgaleva, T. Arikawa, Koichiro Tanaka
We report on the combination of a high-field terahertz source and two-dimensional near-field imaging capability using SrTiO3 (STO) crystal. Specifically, we show that the surface of STO allows sub-picosecond Kerr-effect switching and multi-ps THz intensity recording. The sensitivity and spatial resolution achieved by the STO sensor outperform current near-field THz sensors based on the Pockel effect, and more importantly, its ability to remain polarized for several picoseconds may open the door to a new strategy for building an ultrafast two-dimensional space-time THz memory.
我们报道了利用SrTiO3 (STO)晶体将高场太赫兹源与二维近场成像能力相结合。具体来说,我们表明STO表面允许亚皮秒克尔效应切换和多ps太赫兹强度记录。STO传感器的灵敏度和空间分辨率优于目前基于Pockel效应的近场太赫兹传感器,更重要的是,它能够在几皮秒内保持极化,这可能为建立超快二维时空太赫兹存储器的新策略打开大门。
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引用次数: 0
Opportunities and Challenges for Discrete Raman Amplifiers in Ultrawideband Transmission Systems 离散拉曼放大器在超宽带传输系统中的机遇与挑战
Pub Date : 2022-07-01 DOI: 10.1109/SUM53465.2022.9858323
M. A. Iqbal, M. Tan, W. Forysiak, A. Lord
This paper reviews the opportunities and challenges of UWB transmission systems in terms of ISRS and fibre attenuation. We also discuss a novel design of UWB dual-stage discrete Raman amplifier spanning E-to- L bands and numerically demonstrate the gain, noise figure and output power performances.
本文从ISRS和光纤衰减两方面综述了超宽带传输系统的机遇和挑战。我们还讨论了一种跨e到L波段的超宽带双级分立拉曼放大器的新设计,并对其增益、噪声系数和输出功率性能进行了数值演示。
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引用次数: 1
Achievable Information Rates in C-band Nonlinear Coherent Optical Communication Systems c波段非线性相干光通信系统可实现的信息速率
Pub Date : 2022-07-01 DOI: 10.1109/SUM53465.2022.9858264
Tianhua Xu, Mupeng Li, N. Shevchenko, M. Tan, Wenxiu Hu, Z. Li, Tiegen Liu
Information rates of C-band Nyquist-spaced optical fiber communication systems with erbium-doped fiber amplifier (EDFA) and distributed Raman amplification (DRA) schemes were discussed. Results indicate that the nonlinearity compensation performance depends on transmission distances and modulation formats.
讨论了采用掺铒光纤放大器(EDFA)和分布式拉曼放大(DRA)方案的c波段奈奎斯特间隔光纤通信系统的信息速率。结果表明,非线性补偿性能与传输距离和调制格式有关。
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引用次数: 0
Generating Quantum Cascade Laser Datasets for Applications in Machine Learning 生成用于机器学习应用的量子级联激光数据集
Pub Date : 2022-07-01 DOI: 10.1109/SUM53465.2022.9858281
A. Hernandez, Ming Lyu, C. Gmachl
For the goal of training machine learning algorithms to predict quantum cascade laser designs with high optical gain, a model dataset containing 2600 designs was collected, filtered, and prepared using a representative 8.2 µm laser.
为了训练机器学习算法来预测具有高光增益的量子级联激光器设计,我们收集了包含2600种设计的模型数据集,并使用具有代表性的8.2 μ m激光器进行了滤波和制备。
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引用次数: 1
GeSn Laser Technologies for Integrated Photonics 集成光子学激光技术
Pub Date : 2022-07-01 DOI: 10.1109/SUM53465.2022.9858292
Xuncheng Shi, D. Burt, Youngmin Kim, Hyo‐Jun Joo, J. Tan, Melvina Chen, Yongduck Jung, Lin Zhang, C. Tan, Chulwon Lee, Yong‐Hoon Cho, Z. Ikonić, Yi-Chiau Huang, S. Assali, O. Moutanabbir, D. Nam
We present our latest results on GeSn laser technologies, including high-quality GeSn-on-insulator substrates and improved microdisk and nanobeam GeSn lasers.
我们介绍了我们在GeSn激光技术方面的最新成果,包括高质量的绝缘体基板上的gsn和改进的微盘和纳米束GeSn激光器。
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引用次数: 0
Automatic Testing of a Silicon Photonic Reconfigurable Add/Drop Multiplexer 硅光子可重构加/丢复用器的自动测试
Pub Date : 2022-07-01 DOI: 10.1109/SUM53465.2022.9858270
M. Petrini, Rita Baldi, F. Morichetti, A. Melloni
A novel method to perform both electrical and optical testing of Photonic Circuit is presented. The use of probe card to electrically access and characterize the device enables the execution of a new approach for the calibration and cloning of filter-based devices.
提出了一种对光子电路进行电学和光学测试的新方法。使用探针卡对设备进行电气访问和表征,可以执行基于滤波器的设备的校准和克隆的新方法。
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引用次数: 0
Optoelectronic properties of nanotubes based on tungsten disulfide 基于二硫化钨的纳米管光电性能研究
Pub Date : 2022-07-01 DOI: 10.1109/SUM53465.2022.9858252
M. Paukov, A. Goldt, G. Komandin, A. Syuy, Dmitriy I. Yakubovskiy, A. Polyakov, R. Tenne, A. Zak, S. Novikov, A. Nasibulin, A. V. Arsenin, V. Volkov, M. Burdanova
Inorganic nanotubes (NT), such as WS2NT, have unique properties making them promising candidates for op-toelectronic devices. Herein, we performed optical absorption, Raman, and time-domain terahertz spectroscopy of WS2NT in addition to the microscopy measurements to reveal their optoelectronic properties.
无机纳米管(NT),如WS2NT,具有独特的性质,使其成为极有希望的上电子器件的候选者。在此,除了显微镜测量外,我们还对WS2NT进行了光吸收、拉曼和时域太赫兹光谱分析,以揭示其光电特性。
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引用次数: 0
Ultra-wide band polarization insensitive photonic integrated filters and switches 超宽带偏振不敏感光子集成滤波器和开关
Pub Date : 2022-07-01 DOI: 10.1109/SUM53465.2022.9858312
Yu Wang, R. Kraemer, N. Calabretta
We demonstrate polarization insensitive (PI) ultra-wide band (UWB) photonic filters and switches: 1×12 100 GHz spaced arrayed waveguide grating (AWG) on 3-µm silicon platform, photonic integrated 4×4 polymer matrix switch using total internal reflection (TIR) effect and integrated thermal-optic silica wavelength selective switch (WSS).
我们展示了偏振不敏感(PI)超宽带(UWB)光子滤波器和开关:1×12 100 GHz间隔阵列波导光栅(AWG)在3µm硅平台上,光子集成4×4聚合物矩阵开关利用全内反射(TIR)效应和集成热光硅波长选择开关(WSS)。
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引用次数: 0
Narrow Linewidth Semiconductor Lasers from Visible to Infrared Wavelengths 从可见光到红外波长的窄线宽半导体激光器
Pub Date : 2022-07-01 DOI: 10.1109/SUM53465.2022.9858203
J. Bowers, L. Chang, W. Jin, Joel Guo, C. Xiang, Theodore J. Morin, Bohan Li, M. Tran, Chong Zhang, Lue Wu, Heming Wang, B. Shen, Zhiquan Yuan, T. Komljenovic, K. Vahala
We review recent breakthroughs of narrow-linewidth semiconductor lasers over broad wavelength range, including record-low fundamental linewidth below 40 mHz by self-injection-locking at infrared, the first fully integrated narrow-linewidth laser below silicon's bandgap wavelength, and an ultra-low loss platform for narrow-linewidth lasers at blue and violet.
我们回顾了窄线宽半导体激光器在宽波长范围内的最新突破,包括红外自注入锁定的40 mHz以下创纪录的低基线宽,第一个低于硅带隙波长的完全集成窄线宽激光器,以及蓝色和紫色窄线宽激光器的超低损耗平台。
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引用次数: 0
期刊
2022 IEEE Photonics Society Summer Topicals Meeting Series (SUM)
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