Pub Date : 2015-05-25DOI: 10.1109/GSMM.2015.7175434
A. Hadarig, S. Ver Hoeye, C. Vázquez, R. Camblor, Miguel Fernández, G. Hotopan, L. Alonso, F. Las-Heras
This work presents a millimeter/submillimeter wave frequency receiver integrating a graphene subharmonic mixer and a diagonal horn antenna. The device receives the RF signal through the diagonal horn antenna directly connected to the WR-3 input of the mixer. The desired frequency mixing performance is obtained using the non-linear behavior of a few-layer graphene film placed on a microstrip line gap. Using the internally generated 6th, 8th and 10th harmonic components of the input signal provided by the WR-28 standard waveguide in the 26-40 GHz the downconversion operation of the RF signal to a 300 MHz intermediate frequency is performed. A prototype of the receiver has been manufactured using high precision 3D printing technology. The performance of this device is characterized taking into account the behavior of the IF power in the 220-330 GHz band. Measured radiation patterns are also included.
{"title":"3D printed millimeter wave receiver integrating a graphene subharmonic mixer and a diagonal horn antenna","authors":"A. Hadarig, S. Ver Hoeye, C. Vázquez, R. Camblor, Miguel Fernández, G. Hotopan, L. Alonso, F. Las-Heras","doi":"10.1109/GSMM.2015.7175434","DOIUrl":"https://doi.org/10.1109/GSMM.2015.7175434","url":null,"abstract":"This work presents a millimeter/submillimeter wave frequency receiver integrating a graphene subharmonic mixer and a diagonal horn antenna. The device receives the RF signal through the diagonal horn antenna directly connected to the WR-3 input of the mixer. The desired frequency mixing performance is obtained using the non-linear behavior of a few-layer graphene film placed on a microstrip line gap. Using the internally generated 6th, 8th and 10th harmonic components of the input signal provided by the WR-28 standard waveguide in the 26-40 GHz the downconversion operation of the RF signal to a 300 MHz intermediate frequency is performed. A prototype of the receiver has been manufactured using high precision 3D printing technology. The performance of this device is characterized taking into account the behavior of the IF power in the 220-330 GHz band. Measured radiation patterns are also included.","PeriodicalId":405509,"journal":{"name":"Global Symposium on Millimeter-Waves (GSMM)","volume":"194 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123013975","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-05-25DOI: 10.1109/GSMM.2015.7175435
D. Wang, B. Chen, P. Zhao, C. Chan
Aperture-coupled resonators (ACRs) are applied to realize high frequency-selectivity bandpass frequency selective surfaces (FSSs). In the ACR FSS structures, identical patch resonators on the top and bottom layers are coupled through coupling apertures etched on a conducting plane in between. Multiple coupling paths between the resonators result in two transmission zeros on either side of the narrow passband, thereby realizing high frequency selectivity and suppressing the sidebands. Due to the symmetric structures and low profiles, the ACR FSSs exhibit superior stability to various incident angles and polarization states. For demonstration and potential applications, two ACR FSSs were designed at millimeter-wave and terahertz (THz) frequencies respectively. The standard printed circuit board (PCB) processing technology and the microfabrication technology were adopted to fabricate the proposed FSS structures. The measured results agree well with the simulated ones, thus verifying the proposed design.
{"title":"High-selectivity frequency selective surfaces at millimeter-wave and terahertz frequencies","authors":"D. Wang, B. Chen, P. Zhao, C. Chan","doi":"10.1109/GSMM.2015.7175435","DOIUrl":"https://doi.org/10.1109/GSMM.2015.7175435","url":null,"abstract":"Aperture-coupled resonators (ACRs) are applied to realize high frequency-selectivity bandpass frequency selective surfaces (FSSs). In the ACR FSS structures, identical patch resonators on the top and bottom layers are coupled through coupling apertures etched on a conducting plane in between. Multiple coupling paths between the resonators result in two transmission zeros on either side of the narrow passband, thereby realizing high frequency selectivity and suppressing the sidebands. Due to the symmetric structures and low profiles, the ACR FSSs exhibit superior stability to various incident angles and polarization states. For demonstration and potential applications, two ACR FSSs were designed at millimeter-wave and terahertz (THz) frequencies respectively. The standard printed circuit board (PCB) processing technology and the microfabrication technology were adopted to fabricate the proposed FSS structures. The measured results agree well with the simulated ones, thus verifying the proposed design.","PeriodicalId":405509,"journal":{"name":"Global Symposium on Millimeter-Waves (GSMM)","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123813404","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-05-25DOI: 10.1109/GSMM.2015.7175456
Weal M. Abdel-Wahab, Al-Saedi Hussam, S. Safavi-Naeini, Ying Wang
This paper presents a method for the integration of dielectric resonator antenna (DRA) array with substrate integrated waveguide (SIW) arranged in sequential rotation configuration. The proposed antenna structure is symmetric, low loss and compact. Linear-polarized (LP) DRA elements are used as loads to a hybrid junction SIW splitter to generate high purity circular polarized (CP) radiation. The simulation results show a symmetric radiation pattern of very low cross-polarization and 1 dB axial-ratio band width of ~ 1GHz at 36.50 GHz.
{"title":"Circularly polarized SIW-integrated DRA for low cost millimeter wave systems","authors":"Weal M. Abdel-Wahab, Al-Saedi Hussam, S. Safavi-Naeini, Ying Wang","doi":"10.1109/GSMM.2015.7175456","DOIUrl":"https://doi.org/10.1109/GSMM.2015.7175456","url":null,"abstract":"This paper presents a method for the integration of dielectric resonator antenna (DRA) array with substrate integrated waveguide (SIW) arranged in sequential rotation configuration. The proposed antenna structure is symmetric, low loss and compact. Linear-polarized (LP) DRA elements are used as loads to a hybrid junction SIW splitter to generate high purity circular polarized (CP) radiation. The simulation results show a symmetric radiation pattern of very low cross-polarization and 1 dB axial-ratio band width of ~ 1GHz at 36.50 GHz.","PeriodicalId":405509,"journal":{"name":"Global Symposium on Millimeter-Waves (GSMM)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126290776","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-05-25DOI: 10.1109/GSMM.2015.7378733
Nima Bayat-Makou, A. Kishk
A dual layer, dual reflector leaky wave antenna for broadside radiation is presented. The antenna has compact size since one layer is dedicated for reflector feeds and the other layer for leaky slot array. The tapered leaky slots are fed by out-of-phase waves coming from reflectors travelling in opposite directions so that the broadside radiation patterns are achieved with over 20% frequency band without beam scanning.
{"title":"Dual-layer substrate integrated broadside leaky-wave antenna","authors":"Nima Bayat-Makou, A. Kishk","doi":"10.1109/GSMM.2015.7378733","DOIUrl":"https://doi.org/10.1109/GSMM.2015.7378733","url":null,"abstract":"A dual layer, dual reflector leaky wave antenna for broadside radiation is presented. The antenna has compact size since one layer is dedicated for reflector feeds and the other layer for leaky slot array. The tapered leaky slots are fed by out-of-phase waves coming from reflectors travelling in opposite directions so that the broadside radiation patterns are achieved with over 20% frequency band without beam scanning.","PeriodicalId":405509,"journal":{"name":"Global Symposium on Millimeter-Waves (GSMM)","volume":"109 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116923007","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-05-25DOI: 10.1109/GSMM.2015.7175452
Z. Briqech, J. Robitaille, K. Bishyk, K. Abdo, D. Bhogal, A. Sebak
A high gain, high-efficiency antipodal tapered slot antenna with sine-shaped corrugation and a Fermi profile substrate cut-out has been developed for 5G millimeter wave (MMW) communications. A parametric study of a new substrate cutout with Fermi profile is demonstrated to reduce the sidelobe level at the E-plane and H-plane as well as to increase antenna efficiency by an average of 88% over a band of 20-40 GHz. A low-cost printed circuit board (PCB) is processed simply with a CNC Milling machine to fabricate the proposed antenna with Fermi profile substrate cut-out. The measured reflection coefficient is found to be less than -14 dB over a frequency range of 20-40 GHz. Furthermore, the measured gain of the proposed antenna is 17 dB at 30 GHz and the measured radiation pattern and gain is almost constant within the wide bandwidth from 30-40 GHz. Therefore, this antenna is proposed for use in an H-plane array structure such as for point-to-point communication systems, a switched-beam system.
{"title":"High gain antipodal tapered slot antenna With sine-shaped corrugation and fermi profile substrate slotted cut-out for MMW 5G","authors":"Z. Briqech, J. Robitaille, K. Bishyk, K. Abdo, D. Bhogal, A. Sebak","doi":"10.1109/GSMM.2015.7175452","DOIUrl":"https://doi.org/10.1109/GSMM.2015.7175452","url":null,"abstract":"A high gain, high-efficiency antipodal tapered slot antenna with sine-shaped corrugation and a Fermi profile substrate cut-out has been developed for 5G millimeter wave (MMW) communications. A parametric study of a new substrate cutout with Fermi profile is demonstrated to reduce the sidelobe level at the E-plane and H-plane as well as to increase antenna efficiency by an average of 88% over a band of 20-40 GHz. A low-cost printed circuit board (PCB) is processed simply with a CNC Milling machine to fabricate the proposed antenna with Fermi profile substrate cut-out. The measured reflection coefficient is found to be less than -14 dB over a frequency range of 20-40 GHz. Furthermore, the measured gain of the proposed antenna is 17 dB at 30 GHz and the measured radiation pattern and gain is almost constant within the wide bandwidth from 30-40 GHz. Therefore, this antenna is proposed for use in an H-plane array structure such as for point-to-point communication systems, a switched-beam system.","PeriodicalId":405509,"journal":{"name":"Global Symposium on Millimeter-Waves (GSMM)","volume":"332 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134524666","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-05-25DOI: 10.1109/GSMM.2015.7175469
R. Glogowski, C. Peixeiro, J. Zurcher, J. Mosig
Millimeter-wave antenna array Beam Forming Networks in Substrate Integrated Waveguide (SIW) technology are an attractive alternative to the use of TEM transmission lines, such as microstrip or stripline. SIW allows reducing the transmission losses while maintaining low price and simple, yet accurate, fabrication of the Printed Circuit Board technology. However, SIW design has additional restrictions and limitations when compared to TEM transmission lines. This includes increased footprint, a need to use additional transitions to other transmission lines or some types of radiating element as well as a more complicated overall design. In this contribution the authors propose the design of a Ka-band antenna array, which extensively uses SIW technology. The design is based on the requirements of a real-life satellite application. These include limitations imposed on return loss bandwidth, gain, radiation pattern shape, and polarization. Moreover, also the feeding method is imposed and the antenna array footprint should be minimized. A prototype of the proposed design has been fabricated and measured. The results show a 8.9% return loss bandwidth, a 12% circular polarization bandwidth and a radiation efficiency over 60%. The obtained RF performance as well as other aspects, such as footprint, are compared with an alternative state-of-the-art design, which has been developed according to the same requirements but using different architecture and technologies.
{"title":"Design and optimization of a shaped-beam ka-band substrate integrated waveguide antenna array","authors":"R. Glogowski, C. Peixeiro, J. Zurcher, J. Mosig","doi":"10.1109/GSMM.2015.7175469","DOIUrl":"https://doi.org/10.1109/GSMM.2015.7175469","url":null,"abstract":"Millimeter-wave antenna array Beam Forming Networks in Substrate Integrated Waveguide (SIW) technology are an attractive alternative to the use of TEM transmission lines, such as microstrip or stripline. SIW allows reducing the transmission losses while maintaining low price and simple, yet accurate, fabrication of the Printed Circuit Board technology. However, SIW design has additional restrictions and limitations when compared to TEM transmission lines. This includes increased footprint, a need to use additional transitions to other transmission lines or some types of radiating element as well as a more complicated overall design. In this contribution the authors propose the design of a Ka-band antenna array, which extensively uses SIW technology. The design is based on the requirements of a real-life satellite application. These include limitations imposed on return loss bandwidth, gain, radiation pattern shape, and polarization. Moreover, also the feeding method is imposed and the antenna array footprint should be minimized. A prototype of the proposed design has been fabricated and measured. The results show a 8.9% return loss bandwidth, a 12% circular polarization bandwidth and a radiation efficiency over 60%. The obtained RF performance as well as other aspects, such as footprint, are compared with an alternative state-of-the-art design, which has been developed according to the same requirements but using different architecture and technologies.","PeriodicalId":405509,"journal":{"name":"Global Symposium on Millimeter-Waves (GSMM)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114293535","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-05-25DOI: 10.1109/GSMM.2015.7175455
Muhammad M. Tahseen, A. Kishk
A novel broadband flip-flop low profile Reflectarray (RA) is designed for Ka-Band based on the principle of dual side printed substrate. First, the reflected wave phase curve is obtained by varying the patch size on top layer while energy is coupled through a bottom slot of equal size to the patch. Such a cell provides 360° degress reflected phase with almost linear behavior. Second, the element is flipped and analysis for reflected phase when square slot is varied on top layer while the complementary patch, is varied in the bottom layer. Both methods provide full 360 degrees phase range. In both methods, a small air gap is introduced below substrate to add GND plane on bottom. The proposed methods provide broadband using the thinnest available substrate. Both designs achieve good performance in term of Half Power Beam width (HPBW), Side Love Level (SLL), cross polarization and gain bandwidth (at 30 GHz). The first 15*15 RA design provides, HPBW of 6.6 degrees, SLL -20 dB, cross polarization -25 dB down than copolar component, 1dB gain bandwidth of 14.5 % and 3-dB bandwidth of 23.2 % centered. Similarly, the second flipped 15*15 RA design provides, SLL of -17 dB, cross polarization of -25 dB down than copolar component, 1-dB gain bandwidth of 11.5 % and 3-dB bandwidth of 21 %.
{"title":"Flip-flop low profile wideband reflectarray antenna for ka-band","authors":"Muhammad M. Tahseen, A. Kishk","doi":"10.1109/GSMM.2015.7175455","DOIUrl":"https://doi.org/10.1109/GSMM.2015.7175455","url":null,"abstract":"A novel broadband flip-flop low profile Reflectarray (RA) is designed for Ka-Band based on the principle of dual side printed substrate. First, the reflected wave phase curve is obtained by varying the patch size on top layer while energy is coupled through a bottom slot of equal size to the patch. Such a cell provides 360° degress reflected phase with almost linear behavior. Second, the element is flipped and analysis for reflected phase when square slot is varied on top layer while the complementary patch, is varied in the bottom layer. Both methods provide full 360 degrees phase range. In both methods, a small air gap is introduced below substrate to add GND plane on bottom. The proposed methods provide broadband using the thinnest available substrate. Both designs achieve good performance in term of Half Power Beam width (HPBW), Side Love Level (SLL), cross polarization and gain bandwidth (at 30 GHz). The first 15*15 RA design provides, HPBW of 6.6 degrees, SLL -20 dB, cross polarization -25 dB down than copolar component, 1dB gain bandwidth of 14.5 % and 3-dB bandwidth of 23.2 % centered. Similarly, the second flipped 15*15 RA design provides, SLL of -17 dB, cross polarization of -25 dB down than copolar component, 1-dB gain bandwidth of 11.5 % and 3-dB bandwidth of 21 %.","PeriodicalId":405509,"journal":{"name":"Global Symposium on Millimeter-Waves (GSMM)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130667944","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-05-25DOI: 10.1109/GSMM.2015.7175454
Juntaek Oh, Jingyu Jang, Songcheol Hong
The 26 GHz and 79 GHz UWB frequency bands are used for short-range radar applications for automobile. In this paper, single chip front-end ICs for both frequency bands are presented. The pulsed oscillator at 26 GHz can produce UWB short pulses. It consumes power only during short duty cycles; thus, it allows a power-efficient radar. A stereo radar, which comprises two synchronized radars, is demonstrated with the ICs. Hybrid beam forming techniques based on base-band delay are also demonstrated. The pulsed front-end architecture of the proposed 79 GHz UWB pulse radar is discussed, which is expected to reduce power consumption. The performance of some circuit elements is also reported.
{"title":"Millimeter wave UWB pulse radar front-end ICs","authors":"Juntaek Oh, Jingyu Jang, Songcheol Hong","doi":"10.1109/GSMM.2015.7175454","DOIUrl":"https://doi.org/10.1109/GSMM.2015.7175454","url":null,"abstract":"The 26 GHz and 79 GHz UWB frequency bands are used for short-range radar applications for automobile. In this paper, single chip front-end ICs for both frequency bands are presented. The pulsed oscillator at 26 GHz can produce UWB short pulses. It consumes power only during short duty cycles; thus, it allows a power-efficient radar. A stereo radar, which comprises two synchronized radars, is demonstrated with the ICs. Hybrid beam forming techniques based on base-band delay are also demonstrated. The pulsed front-end architecture of the proposed 79 GHz UWB pulse radar is discussed, which is expected to reduce power consumption. The performance of some circuit elements is also reported.","PeriodicalId":405509,"journal":{"name":"Global Symposium on Millimeter-Waves (GSMM)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134462294","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-05-25DOI: 10.1109/GSMM.2015.7175461
A. Soltani, A. Talbi, J. Gerbedoen, N. Bourzgui, A. Bassam, V. Mortet, H. Maher, A. BenMoussa
Fabrication of surface acoustic wave sensors (SAW) based on aluminum nitride (AlN) thin film are reported with improved performance using titanium nitride (TiN) nucleation buffer layer as plate electrode on (100) oriented Silicon (Si) substrate. AlN and TiN thin films are deposited at low temperature by magnetron sputtering and characterized by X-ray diffraction, high resolution transmission electron microscopy, showing good crystalline properties. The insertion loss measured on AlN/Si and AlN/TiN/Si based SAW devices shows clearly that the presence of a TiN nucleation layer improves the acoustic wave device performances. As a final result, a SAW device made on a AlN/TiN membrane by backside etched Si substrate generates symmetrical Lamb wave properties with central frequency at 630 MHz and a phase velocity of 10176 m.s-1. Operation in the microwave range is possible with appropriate AlN layers.
采用氮化钛(TiN)成核缓冲层作为板电极，在(100)取向硅(Si)衬底上制备了基于氮化铝(AlN)薄膜的表面声波传感器(SAW)，提高了传感器的性能。采用磁控溅射法制备了AlN和TiN薄膜，并用x射线衍射、高分辨率透射电镜对其进行了表征，显示出良好的晶体性能。在AlN/Si和AlN/TiN/Si基SAW器件上测量的插入损耗清楚地表明，TiN成核层的存在提高了声波器件的性能。结果表明，在AlN/TiN薄膜上采用背蚀刻Si衬底制备的声表面波器件产生了对称的兰姆波特性，其中心频率为630 MHz，相速度为10176 ms -1。使用合适的AlN层，可以在微波范围内操作。
{"title":"High performance AlN-based surface acoustic wave sensors on TiN on (100) Silicon substrate","authors":"A. Soltani, A. Talbi, J. Gerbedoen, N. Bourzgui, A. Bassam, V. Mortet, H. Maher, A. BenMoussa","doi":"10.1109/GSMM.2015.7175461","DOIUrl":"https://doi.org/10.1109/GSMM.2015.7175461","url":null,"abstract":"Fabrication of surface acoustic wave sensors (SAW) based on aluminum nitride (AlN) thin film are reported with improved performance using titanium nitride (TiN) nucleation buffer layer as plate electrode on (100) oriented Silicon (Si) substrate. AlN and TiN thin films are deposited at low temperature by magnetron sputtering and characterized by X-ray diffraction, high resolution transmission electron microscopy, showing good crystalline properties. The insertion loss measured on AlN/Si and AlN/TiN/Si based SAW devices shows clearly that the presence of a TiN nucleation layer improves the acoustic wave device performances. As a final result, a SAW device made on a AlN/TiN membrane by backside etched Si substrate generates symmetrical Lamb wave properties with central frequency at 630 MHz and a phase velocity of 10176 m.s-1. Operation in the microwave range is possible with appropriate AlN layers.","PeriodicalId":405509,"journal":{"name":"Global Symposium on Millimeter-Waves (GSMM)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132208776","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-05-25DOI: 10.1109/GSMM.2015.7175458
M. Kantanen, J. Holmberg, T. Karttaavi
This paper presents a two-way vector modulator integrated circuit aimed for millimeter wave phased array systems. The active vector modulator is based on the Cartesian topology. Phase can be tuned continuously 360 degrees and the usable gain control range is more than 10 dB. The chip includes a low-noise preamplifier and a buffer amplifier in both receive and transmit paths, which are coupled together using a T-junction. The chip can be used from 60 to 80 GHz and the maximum gain is 30 dB at 67 GHz and The chip is processed in 0.35μm silicon germanium technology. Size of the chip including the pads is 2.5 × 1 mm2 from which one vector modulator core occupies 0.3 × 0.3 mm2.
{"title":"Two-way vector modulator SiGe MMIC for millimeter-wave phased array applications","authors":"M. Kantanen, J. Holmberg, T. Karttaavi","doi":"10.1109/GSMM.2015.7175458","DOIUrl":"https://doi.org/10.1109/GSMM.2015.7175458","url":null,"abstract":"This paper presents a two-way vector modulator integrated circuit aimed for millimeter wave phased array systems. The active vector modulator is based on the Cartesian topology. Phase can be tuned continuously 360 degrees and the usable gain control range is more than 10 dB. The chip includes a low-noise preamplifier and a buffer amplifier in both receive and transmit paths, which are coupled together using a T-junction. The chip can be used from 60 to 80 GHz and the maximum gain is 30 dB at 67 GHz and The chip is processed in 0.35μm silicon germanium technology. Size of the chip including the pads is 2.5 × 1 mm2 from which one vector modulator core occupies 0.3 × 0.3 mm2.","PeriodicalId":405509,"journal":{"name":"Global Symposium on Millimeter-Waves (GSMM)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133143187","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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