Optical sources that deliver single photons on demand play a key role in quantum cryptography and optical quantum computations. At present, color centers in wide-bandgap semiconductors, such as the nitrogen-vacancy (NV) and silicon-vacancy (SiV) centers in diamond, are considered to be the most promising candidates for practical quantum information applications owing to their unique emission properties at room temperature. However, for practical reasons, single-photon sources should be pumped electrically, which is required for integrability, scalability, and energy efficiency. However, diamond and related wide-bandgap semiconductor materials are at the interface between insulators and semiconductors, which makes electrical excitation of color centers very challenging. Here, we report on our progress in the understanding of single-photon electroluminescence of color centers in diamond, discuss different factors affecting the brightness of these emitter under electrical excitation, and study how to improve the performance of electrically- pumped single-photon sources based on color centers in diamond.
{"title":"Electrical excitation of color centers in diamond: Toward practical single-photon sources","authors":"I. A. Khramtsov, M. Agio, D. Fedyanin","doi":"10.1063/5.0054901","DOIUrl":"https://doi.org/10.1063/5.0054901","url":null,"abstract":"Optical sources that deliver single photons on demand play a key role in quantum cryptography and optical quantum computations. At present, color centers in wide-bandgap semiconductors, such as the nitrogen-vacancy (NV) and silicon-vacancy (SiV) centers in diamond, are considered to be the most promising candidates for practical quantum information applications owing to their unique emission properties at room temperature. However, for practical reasons, single-photon sources should be pumped electrically, which is required for integrability, scalability, and energy efficiency. However, diamond and related wide-bandgap semiconductor materials are at the interface between insulators and semiconductors, which makes electrical excitation of color centers very challenging. Here, we report on our progress in the understanding of single-photon electroluminescence of color centers in diamond, discuss different factors affecting the brightness of these emitter under electrical excitation, and study how to improve the performance of electrically- pumped single-photon sources based on color centers in diamond.","PeriodicalId":405600,"journal":{"name":"PROCEEDINGS OF INTERNATIONAL CONGRESS ON GRAPHENE, 2D MATERIALS AND APPLICATIONS (2D MATERIALS 2019)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126703732","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
R. Khabibullin, N. Shchavruk, D. Ponomarev, Dmitrii Ushakov, A. A. Afonenko, O. Volkov, V. Pavlovskiy, K. V. Maremyanin, A. Dubinov
We have designed and fabricated 2.3 THz QCL with active module based on 4 QWs GaAs/Al0.15Ga0.85As. The light-current-voltage (L-I-V) characteristics and emission spectra of fabricated THz QCL are investigated. The nonmonotonic behavior of L–I characteristic and a large number of discontinuities in I-V characteristic is observed. Our calculations show that such electric instabilities are associated with the field inhomogeneity across the active region (electric field domains). We investigate transmission spectra of incident radiation of GaAs and AlGaAs/GaAs structures with two highly absorption optical response regions. Thus, to improve the performance and extend the operation frequencies of THz QCLs it is needed to develop new concepts of active region designs for avoiding the formation of electric field domains and employ novel material systems for lasing in the frequency range 8-11 THz.
{"title":"Limiting factors to the performance and operation frequency range of THz quantum cascade laser based on GaAs/AlGaAs heterostructures","authors":"R. Khabibullin, N. Shchavruk, D. Ponomarev, Dmitrii Ushakov, A. A. Afonenko, O. Volkov, V. Pavlovskiy, K. V. Maremyanin, A. Dubinov","doi":"10.1063/5.0054908","DOIUrl":"https://doi.org/10.1063/5.0054908","url":null,"abstract":"We have designed and fabricated 2.3 THz QCL with active module based on 4 QWs GaAs/Al0.15Ga0.85As. The light-current-voltage (L-I-V) characteristics and emission spectra of fabricated THz QCL are investigated. The nonmonotonic behavior of L–I characteristic and a large number of discontinuities in I-V characteristic is observed. Our calculations show that such electric instabilities are associated with the field inhomogeneity across the active region (electric field domains). We investigate transmission spectra of incident radiation of GaAs and AlGaAs/GaAs structures with two highly absorption optical response regions. Thus, to improve the performance and extend the operation frequencies of THz QCLs it is needed to develop new concepts of active region designs for avoiding the formation of electric field domains and employ novel material systems for lasing in the frequency range 8-11 THz.","PeriodicalId":405600,"journal":{"name":"PROCEEDINGS OF INTERNATIONAL CONGRESS ON GRAPHENE, 2D MATERIALS AND APPLICATIONS (2D MATERIALS 2019)","volume":"121 20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126097594","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
E. Titova, A. Bylinkin, V. Mikheev, M. Kashchenko, E. Zhukova, D. Svintsov
We demonstrate the excitation of gate-tunable terahertz plasmon resonance in large area grating-coupled CVD graphene using Fourier spectroscopy. We find that the resonance is clearly distinguishable above the Drude absorption background in the 5-10 THz range despite moderate carrier mobility in CVD graphene (∼103 cm2/V/s). Besides, plasmon lifetime in CVD graphene samples exceeds the transport relaxation from dc mobility measurements. We confirm this ratio by simultaneous THz transmission spectroscopy and field-effect measurements. We also show the plasmon spectra modification related to the presence of the grating coupler in close proximity to graphene. The plasmon field becomes tightly bound below the metal stripes, while the frequency depends on the stripe length but not by grating period.
{"title":"Terahertz plasmons in grating-coupled large-area graphene transistors","authors":"E. Titova, A. Bylinkin, V. Mikheev, M. Kashchenko, E. Zhukova, D. Svintsov","doi":"10.1063/5.0056080","DOIUrl":"https://doi.org/10.1063/5.0056080","url":null,"abstract":"We demonstrate the excitation of gate-tunable terahertz plasmon resonance in large area grating-coupled CVD graphene using Fourier spectroscopy. We find that the resonance is clearly distinguishable above the Drude absorption background in the 5-10 THz range despite moderate carrier mobility in CVD graphene (∼103 cm2/V/s). Besides, plasmon lifetime in CVD graphene samples exceeds the transport relaxation from dc mobility measurements. We confirm this ratio by simultaneous THz transmission spectroscopy and field-effect measurements. We also show the plasmon spectra modification related to the presence of the grating coupler in close proximity to graphene. The plasmon field becomes tightly bound below the metal stripes, while the frequency depends on the stripe length but not by grating period.","PeriodicalId":405600,"journal":{"name":"PROCEEDINGS OF INTERNATIONAL CONGRESS ON GRAPHENE, 2D MATERIALS AND APPLICATIONS (2D MATERIALS 2019)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123171855","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
I. Ilyakov, S. Bodrov, G. Kitaeva, B. Shishkin, M. Bakunov, R. Akhmedzhanov
Experimental results on Cherenkov-type nonlinear optical generation and detection of pulsed terahertz radiation by using a structure with a thin lithium niobate layer attached to an output Si prism are presented. The structure provides high optical-to-terahertz conversion efficiency for a broad range of laser pump wavelengths and high detection sensitivity.
{"title":"Detection and generation of THz pulses with the use of lithium niobate sandwich-structure and other birefringent materials","authors":"I. Ilyakov, S. Bodrov, G. Kitaeva, B. Shishkin, M. Bakunov, R. Akhmedzhanov","doi":"10.1063/5.0055184","DOIUrl":"https://doi.org/10.1063/5.0055184","url":null,"abstract":"Experimental results on Cherenkov-type nonlinear optical generation and detection of pulsed terahertz radiation by using a structure with a thin lithium niobate layer attached to an output Si prism are presented. The structure provides high optical-to-terahertz conversion efficiency for a broad range of laser pump wavelengths and high detection sensitivity.","PeriodicalId":405600,"journal":{"name":"PROCEEDINGS OF INTERNATIONAL CONGRESS ON GRAPHENE, 2D MATERIALS AND APPLICATIONS (2D MATERIALS 2019)","volume":"95 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132291211","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. Zhukov, D. Kopylova, A. Tsapenko, Anna V. Mogorychnaia, P. Abramov, E. Zhukova, A. Nasibulin, B. Gorshunov
Time-domain terahertz and infrared Fourier-transform spectroscopy techniques are used to study the temperature-dependent conductivity spectra of free-standing macroscale films composed of disordered single-walled carbon nanotubes. Comparative experiments are performed on films composed of nanotubes a) treated with oxygen plasma and b) having different lengths. We observe and analyze transformation of the terahertz conductivity of the films from metal-type to semiconductor-like. We trace evolution of the terahertz conductivity peak during the change of the temperature and the length of nanotubes. In films treated with oxygen plasma, the temperature dependence of the terahertz conductivity of only the semiconductor-type was observed and it decreased with exposure time.
{"title":"Terahertz-infrared conductivity of plasma-treated of CNT-based macroscale films","authors":"S. Zhukov, D. Kopylova, A. Tsapenko, Anna V. Mogorychnaia, P. Abramov, E. Zhukova, A. Nasibulin, B. Gorshunov","doi":"10.1063/5.0055749","DOIUrl":"https://doi.org/10.1063/5.0055749","url":null,"abstract":"Time-domain terahertz and infrared Fourier-transform spectroscopy techniques are used to study the temperature-dependent conductivity spectra of free-standing macroscale films composed of disordered single-walled carbon nanotubes. Comparative experiments are performed on films composed of nanotubes a) treated with oxygen plasma and b) having different lengths. We observe and analyze transformation of the terahertz conductivity of the films from metal-type to semiconductor-like. We trace evolution of the terahertz conductivity peak during the change of the temperature and the length of nanotubes. In films treated with oxygen plasma, the temperature dependence of the terahertz conductivity of only the semiconductor-type was observed and it decreased with exposure time.","PeriodicalId":405600,"journal":{"name":"PROCEEDINGS OF INTERNATIONAL CONGRESS ON GRAPHENE, 2D MATERIALS AND APPLICATIONS (2D MATERIALS 2019)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122933271","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. A. El-Sayed, A. Arsenin, A. Vyshnevyy, A. A. Voronov, V. Volkov
We report an ellipsometric study of the monolayer graphene prepared by the chemical vapor deposition (CVD). The investigation was carried over a broad spectral range spanning the ultraviolet to the near-infrared at variable incidence angles. Comparison with graphite and previously published graphene data shows a high degree of similarity in the optical properties of these two materials.
{"title":"Comparative analysis of optical properties of CVD graphene and graphite via spectroscopic ellipsometry","authors":"M. A. El-Sayed, A. Arsenin, A. Vyshnevyy, A. A. Voronov, V. Volkov","doi":"10.1063/5.0055462","DOIUrl":"https://doi.org/10.1063/5.0055462","url":null,"abstract":"We report an ellipsometric study of the monolayer graphene prepared by the chemical vapor deposition (CVD). The investigation was carried over a broad spectral range spanning the ultraviolet to the near-infrared at variable incidence angles. Comparison with graphite and previously published graphene data shows a high degree of similarity in the optical properties of these two materials.","PeriodicalId":405600,"journal":{"name":"PROCEEDINGS OF INTERNATIONAL CONGRESS ON GRAPHENE, 2D MATERIALS AND APPLICATIONS (2D MATERIALS 2019)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124749761","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this work, we report the results of fabrication of heterostructures of two-dimensional graphene-like transition metal dichalcogenides MoS2 and MoSe2 by modified polymer stamp transfer technique. Photoluminescence microscopy/spectroscopy studies confirms the creation of heterostructures with the properties that are different from the ones of each single material.
{"title":"Optical properties of multilayer heterostructures based on transition metal dichalcogenides","authors":"A. Avdizhiyan, M. Vasina, S. Lavrov, E. Mishina","doi":"10.1063/5.0055114","DOIUrl":"https://doi.org/10.1063/5.0055114","url":null,"abstract":"In this work, we report the results of fabrication of heterostructures of two-dimensional graphene-like transition metal dichalcogenides MoS2 and MoSe2 by modified polymer stamp transfer technique. Photoluminescence microscopy/spectroscopy studies confirms the creation of heterostructures with the properties that are different from the ones of each single material.","PeriodicalId":405600,"journal":{"name":"PROCEEDINGS OF INTERNATIONAL CONGRESS ON GRAPHENE, 2D MATERIALS AND APPLICATIONS (2D MATERIALS 2019)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115973529","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Iuliia M. Vyshkvorkina, Y. Stebunov, A. Arsenin, V. Volkov, S. Novikov
During recent years, graphene has attracted growing interest for application in biology, particularly in the biosensing field for sensitivity enhancement. For the biosensing purpose, the graphene layers have to be uniform and have an accurately controlled thickness. Graphene quality may vary depending on the method of its production. Using Raman spectroscopy, an assessment was made of the quality and suitability of the use of CVD and exfoliated graphene for biosensors. The Raman spectra of graphene obtained by the chemical vapor deposition method were measured before and after transferring. We found that CVD graphene with single and bi-layer thickness has a uniform structure with lager area and a small number of defects. But the number of defects increases with an increase of the number of layers. Also, we found that for some samples with CVD graphene, sometimes it is difficult to determine the number of layers since the specific shape of the 2D peak is not always explicitly expressed. Furthermore, it was shown that the exfoliated graphene, although having fewer defects, have non-uniform structure, with smaller areas of monolayer graphene.
{"title":"Comparison of CVD-grown and exfoliated graphene for biosensing applications","authors":"Iuliia M. Vyshkvorkina, Y. Stebunov, A. Arsenin, V. Volkov, S. Novikov","doi":"10.1063/5.0054960","DOIUrl":"https://doi.org/10.1063/5.0054960","url":null,"abstract":"During recent years, graphene has attracted growing interest for application in biology, particularly in the biosensing field for sensitivity enhancement. For the biosensing purpose, the graphene layers have to be uniform and have an accurately controlled thickness. Graphene quality may vary depending on the method of its production. Using Raman spectroscopy, an assessment was made of the quality and suitability of the use of CVD and exfoliated graphene for biosensors. The Raman spectra of graphene obtained by the chemical vapor deposition method were measured before and after transferring. We found that CVD graphene with single and bi-layer thickness has a uniform structure with lager area and a small number of defects. But the number of defects increases with an increase of the number of layers. Also, we found that for some samples with CVD graphene, sometimes it is difficult to determine the number of layers since the specific shape of the 2D peak is not always explicitly expressed. Furthermore, it was shown that the exfoliated graphene, although having fewer defects, have non-uniform structure, with smaller areas of monolayer graphene.","PeriodicalId":405600,"journal":{"name":"PROCEEDINGS OF INTERNATIONAL CONGRESS ON GRAPHENE, 2D MATERIALS AND APPLICATIONS (2D MATERIALS 2019)","volume":"337 10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123232198","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
V. Krishtop, L. Fomin, A. Chernykh, E. Vilkov, S. Zhukov, E. Zhukova
The mechanism of formation of spin nonequilibrium with inverse population in spin subbands in quasi-one- dimensional chains of magnetic metal tunnel junctions is considered. The ability of induced spin-injected radiation is discussed. A model of a one-dimensional chain of ferromagnetic metal grains separated by a tunneling dielectric under the influence of electric current is considered. The radiation spectra of grainy metamaterials were measured in the terahertz range depending on the average current density in the Q1D-labyrinth structures.
{"title":"Quasi-one-dimensional chains of magnetic tunnel junctions as a source of THz radiation","authors":"V. Krishtop, L. Fomin, A. Chernykh, E. Vilkov, S. Zhukov, E. Zhukova","doi":"10.1063/5.0055018","DOIUrl":"https://doi.org/10.1063/5.0055018","url":null,"abstract":"The mechanism of formation of spin nonequilibrium with inverse population in spin subbands in quasi-one- dimensional chains of magnetic metal tunnel junctions is considered. The ability of induced spin-injected radiation is discussed. A model of a one-dimensional chain of ferromagnetic metal grains separated by a tunneling dielectric under the influence of electric current is considered. The radiation spectra of grainy metamaterials were measured in the terahertz range depending on the average current density in the Q1D-labyrinth structures.","PeriodicalId":405600,"journal":{"name":"PROCEEDINGS OF INTERNATIONAL CONGRESS ON GRAPHENE, 2D MATERIALS AND APPLICATIONS (2D MATERIALS 2019)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116708561","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The second optical harmonic generation features in two-dimensional graphene-like heterostructures of transition metal dichalcogenides were considered. The absorption spectra of these semiconductor materials were analyzed considering the contribution of multipath interference in the WSe2/MoS2/SiO2/Si structures. The effects of the heterostructures and silicon oxide thicknesses and the optical pumping wavelength on the second optical harmonic generation were studied.
{"title":"The second optical harmonic generation efficiency estimation in two-dimensional semiconductor heterostructures","authors":"S. Lavrov","doi":"10.1063/5.0055582","DOIUrl":"https://doi.org/10.1063/5.0055582","url":null,"abstract":"The second optical harmonic generation features in two-dimensional graphene-like heterostructures of transition metal dichalcogenides were considered. The absorption spectra of these semiconductor materials were analyzed considering the contribution of multipath interference in the WSe2/MoS2/SiO2/Si structures. The effects of the heterostructures and silicon oxide thicknesses and the optical pumping wavelength on the second optical harmonic generation were studied.","PeriodicalId":405600,"journal":{"name":"PROCEEDINGS OF INTERNATIONAL CONGRESS ON GRAPHENE, 2D MATERIALS AND APPLICATIONS (2D MATERIALS 2019)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114012618","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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