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The physical properties and mechanical behavior of NbB2 at high pressure 高压下 NbB2 的物理性质和机械行为
IF 2.1 4区 物理与天体物理 Q3 PHYSICS, CONDENSED MATTER Pub Date : 2024-09-24 DOI: 10.1016/j.ssc.2024.115706
Lun Xiong , Mingquan Jiang , Fang Miao , Sheng Jiang
In this study, niobium diboride (NbB2) was investigated using synchrotron radiation X-ray diffraction in a diamond anvil cell to analyze their compressive behavior at room temperature. The volume of the NbB2 was fitted to its corresponding highest pressures of 32.2 GPa without experiencing structural phase transitions, leading to the determination of bulk modulus of 389(7) GPa. Additionally, we further investigated the bulk modulus, band structure and density of states of NbB2 to 35 GPa by density functional theory. The results yielded a bulk modulus of 285 GPa for NbB2. Importantly, it was observed that NbB2 demonstrates both metallic and non-magnetic properties throughout the pressure range. In addition, we studied the deviatoric stress of NbB2 at high pressure using linewidth analysis method. It was found that NbB2 can support a maximum differential stress of 14.2 GPa at the pressure of 17.3 GPa.
本研究利用同步辐射 X 射线衍射技术,在金刚石砧室中对二硼化铌 (NbB2) 进行了研究,以分析其在室温下的压缩行为。在没有发生结构相变的情况下,NbB2 的体积与相应的最高压力 32.2 GPa 相吻合,从而确定了其体积模量为 389(7) GPa。此外,我们还通过密度泛函理论进一步研究了 NbB2 在 35 GPa 下的体模、带结构和态密度。结果发现 NbB2 的体模量为 285 GPa。重要的是,我们观察到 NbB2 在整个压力范围内都表现出金属和非磁性的特性。此外,我们还利用线宽分析方法研究了 NbB2 在高压下的偏离应力。结果发现,在 17.3 GPa 的压力下,NbB2 可承受 14.2 GPa 的最大偏差应力。
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引用次数: 0
Ferroelectricity enhanced by cerium modified CaBi2Nb2O9-based Aurivillius ferroelectrics 铈修饰的 CaBi2Nb2O9 基 Aurivillius 铁电体增强了铁电性
IF 2.1 4区 物理与天体物理 Q3 PHYSICS, CONDENSED MATTER Pub Date : 2024-09-21 DOI: 10.1016/j.ssc.2024.115705
Hong-Ting Lu, Ji-Chao Li, Chun-Ming Wang, Jian Liu, Tian-Ci Wu, Guang-Rui Yang
The first-principles calculations are employed to investigate the Ce doping effects on the ferroelectricity of the Aurivillius-structured CaBi2Nb2O9 (CBN). The formation energy is calculated for the Ce substituting the Bi site model and the Ce substituting the Ca site model, it is noted that the former is more stable than the latter. The NbO6 octahedron distortion of the Ce/Bi model is increased due to the long-range effect of the Ce doping. By analyzing the partial density of states (PDOS), the Bader charge and the electron localization function (ELF), it is found that the extra electrons are introduced by the Ce doping, and transferred to the atoms of O2, O5, Nb and Bi. Thus, the electronic orbital hybridizations of O2-Nb, O5-Bi, and O2-Bi are enhanced by the extra electrons, and the enhancement of the orbital hybridization is the main reason of the enhancement of the spontaneous polarization (Ps) comparing with intrinsic CBN. These findings could be used as a theoretical reference for future researches on the bismuth layer-structured ferroelectrics (BLSFs).
利用第一性原理计算研究了掺杂 Ce 对 Aurivillius 结构 CaBi2Nb2O9(CBN)铁电性的影响。计算了 Ce 取代 Bi 位点模型和 Ce 取代 Ca 位点模型的形成能,发现前者比后者更稳定。由于掺杂 Ce 的长程效应,Ce/Bi 模型的 NbO6 八面体畸变增大。通过分析部分态密度(PDOS)、Bader 电荷和电子局域函数(ELF),发现掺杂 Ce 后引入了额外的电子,并转移到 O2、O5、Nb 和 Bi 原子上。因此,额外电子增强了 O2-Nb、O5-Bi 和 O2-Bi 的电子轨道杂化,与本征 CBN 相比,轨道杂化的增强是自发极化(Ps)增强的主要原因。这些发现可作为今后研究铋层结构铁电体(BLSFs)的理论参考。
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引用次数: 0
Upper critical field and effective pinning energy in FeSe0.94-xSx single crystals FeSe0.94-xSx 单晶中的上临界场和有效钉能
IF 2.1 4区 物理与天体物理 Q3 PHYSICS, CONDENSED MATTER Pub Date : 2024-09-20 DOI: 10.1016/j.ssc.2024.115704
Kaixin Wu , Yuxian Wu , Yong Zhao
We investigated the crystal structure and superconductivity in the FeSe0.94-xSx (x = 0, 0.1) single crystals. Two distinct phases have been detected in both the FeSe0.94 and FeSe0.84S0.1 samples. The critical temperatures and upper critical field were obtained from the temperature dependence of resistivity curves under different magnetic fields. The transport properties of FeSe0.94 and FeSe0.84S0.1 in the mixed state were investigated. The relation between the effective pinning energy U0 and magnetic field was derived within the framework of the thermally activated flux motion model. A power-law relation U0Hα was observed in the U0 (H) for FeSe0.84S0.1, which shows a crossover behavior around 4 T attributed to different pinning mechanisms. It is demonstrated that S doping significantly influences the critical temperature, effective pinning energy, and upper critical field.
我们研究了 FeSe0.94-xSx (x = 0, 0.1) 单晶体的晶体结构和超导性。在 FeSe0.94 和 FeSe0.84S0.1 样品中都检测到了两种不同的相。根据不同磁场下电阻率曲线的温度依赖性得出了临界温度和上临界磁场。研究了混合状态下 FeSe0.94 和 FeSe0.84S0.1 的传输特性。在热激活磁通量运动模型的框架内推导出了有效钉能 U0 与磁场之间的关系。在 FeSe0.84S0.1的 U0 (H) 中观察到了幂律关系 U0 ∼H-α,在 4 T 左右出现了交叉行为,这归因于不同的引脚机制。研究表明,掺杂 S 会显著影响临界温度、有效钉能和上临界磁场。
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引用次数: 0
Thermal conductivity reduction and crystal properties evolution in iron silicides induced by doping 掺杂诱导硅化铁的热导率降低和晶体性质演变
IF 2.1 4区 物理与天体物理 Q3 PHYSICS, CONDENSED MATTER Pub Date : 2024-09-19 DOI: 10.1016/j.ssc.2024.115700
Sopheap Sam , Kosuke Yamazaki , Hiroshi Nakatsugawa

Understanding the thermal transport behaviors in the crystal lattice is important for designing semiconducting materials in thermal management. In this work, we investigate the mechanism of the decrease in thermal properties of β-FeSi2 when Co dopant is introduced to the host crystal. The crystallite size decreases as Co doping increases from 0 to 5 %. The micro-strain and stress increase with increasing doping levels. The decrease in crystallite size and increase in micro-strain/stress indicate the origin of phonons scattering and lattice softening, leading to the reduction in thermal conductivity. This study provides insights into the correlation between the crystal properties evolution and thermal transport in metal silicide compounds which could be useful in thermal-to-energy conversion applications.

了解晶格中的热传输行为对于设计热管理半导体材料非常重要。在这项工作中,我们研究了当主晶中引入掺杂 Co 时,β-FeSi2 热性能下降的机理。随着钴掺杂量从 0% 增加到 5%,晶体尺寸减小。微应变和应力随着掺杂水平的增加而增加。晶粒尺寸的减小和微应变/应力的增加表明,声子散射和晶格软化是导致热导率降低的原因。这项研究深入揭示了金属硅化物的晶体特性演变与热传输之间的相关性,可用于热能转换应用。
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引用次数: 0
New semiconducting lead-free halide double perovskite Ag2LiGaF6 for optoelectronic and thermoelectric applications 用于光电和热电应用的新型半导体无铅卤化物双包晶石 Ag2LiGaF6
IF 2.1 4区 物理与天体物理 Q3 PHYSICS, CONDENSED MATTER Pub Date : 2024-09-19 DOI: 10.1016/j.ssc.2024.115701
Bharat Bhardwaj, Rajnish Kurchania

A comprehensive study of lead-free halide double perovskite using density functional theory (DFT) including structural, electronic, dynamical, mechanical, optical, and thermoelectric properties has been carried out. The tolerance factor and the octahedral factor confirm that the compound belongs to face-centred-cubic structure with Fm-3m space group. The predicted band structure and DOS exhibit that the material is an indirect bandgap semiconductor. Our calculation reveals that material is dynamically stable because of no negative frequency found in phonon-dispersion curve. The material also possesses mechanical stability. The optical spectra of material show good absorbance and low reflectivity in ultraviolet region. The thermoelectric part discusses the Seebeck coefficient, thermal conductivity, electrical conductivity, power factor, and figure of merit (zT) at different chemical potential into temperature range 400–1200 K. The purpose of this investigation is to stimulate researchers to develop this kind of material and assess their potential for the advancement of contemporary thermoelectric and optoelectronic devices.

利用密度泛函理论(DFT)对无铅卤化物双包晶进行了全面研究,包括结构、电子、动力学、机械、光学和热电性能。公差因子和八面体因子证实该化合物属于面心立方结构,空间群为 Fm-3m。预测的带状结构和 DOS 显示,该材料是一种间接带隙半导体。我们的计算显示,由于声子色散曲线中没有发现负频率,因此该材料具有动态稳定性。该材料还具有机械稳定性。材料的光学光谱显示出良好的吸收率和紫外区的低反射率。热电部分讨论了在 400-1200 K 温度范围内不同化学势下的塞贝克系数、热导率、电导率、功率因数和优点系数 (zT)。
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引用次数: 0
A DFT theoretical prediction of new half-metallic ferromagnetism, mechanical stability, optoelectronic and thermoelectric properties of ZnCrO3 perovskites for spintronic applications 用于自旋电子应用的 ZnCrO3 包晶石的新型半金属铁磁性、机械稳定性、光电和热电特性的 DFT 理论预测
IF 2.1 4区 物理与天体物理 Q3 PHYSICS, CONDENSED MATTER Pub Date : 2024-09-19 DOI: 10.1016/j.ssc.2024.115702
Muhammad Jamil , Mumtaz Manzoor , Abhinav Kumar , Ashish Agrawal , Rafa Almeer , Yedluri Anil Kumar , Ramesh Sharma
ZnCrO3 perovskites structural stability, optoelectronic, mechanical, along with thermoelectric properties, have all been to be described by calculations based on density functional theory (DFT). To determine the exchange correlation potential, the well-known generalized gradient approximation (GGA) and integration of the mBJ potential were used. The perovskite shows that this is in a cubic structure with Fm3m symmetry. Additionally, to check the stability, cohesive energy, structural optimization, and mechanical stability were requirements. This perovskite was found to be brittle, and their mechanical stability enhanced by the elastic constants. The perovskite has a half-metallic character, as evidenced by the spin-polarized electronic band profile, the behavior of the dielectric constant, and absorption coefficient in the spin-up and down channels. In this article, we also looked at magnetism and the origin of the half-metallic gap. The unpaired electrons in the split d-orbitals of the M-sited elements in the crystal field are responsible for the half-metallic as well as magnetic characteristics. Excellent spin polarization at the Fermi level encourages perovskite's possible use in spintronic technologies. Lastly, we computed the thermoelectric parameters within a chemical potential at various temperatures (300 K, 600, 900 K) to explore the potential application in spin electronic devices. Our finding shows that the ZnCrO3 alloy is exceptionally promising for the next generation of spintronics and thermoelectric devices at room and high temperatures.
基于密度泛函理论(DFT)的计算描述了 ZnCrO3 包晶的结构稳定性、光电、机械以及热电特性。为了确定交换关联势,使用了著名的广义梯度近似(GGA)和 mBJ 势积分。透辉石显示出这是一种具有 Fm3m 对称性的立方结构。此外,为了检验稳定性,还对内聚能、结构优化和机械稳定性提出了要求。结果发现,这种包晶是脆性的,其机械稳定性通过弹性常数得到增强。从自旋极化电子带轮廓、介电常数的行为以及自旋上升和下降通道中的吸收系数可以看出,这种过氧化物具有半金属特性。在这篇文章中,我们还研究了磁性和半金属间隙的起源。在晶体场中,M 位元素的分裂 d 轨道中的未成对电子是半金属和磁性特征的原因。费米级的出色自旋极化促进了包晶在自旋电子技术中的应用。最后,我们计算了不同温度(300 K、600 K、900 K)下化学势内的热电参数,以探索自旋电子器件的潜在应用。我们的研究结果表明,ZnCrO3 合金在室温和高温条件下用于下一代自旋电子学和热电器件是非常有前途的。
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引用次数: 0
Exploring Rb2YCuCl6 and Cs2YCuCl6 double perovskites: Structural, electronic, optical, elastic, and thermoelectric properties via density functional theory 探索 Rb2YCuCl6 和 Cs2YCuCl6 双包晶:密度泛函理论的结构、电子、光学、弹性和热电特性
IF 2.1 4区 物理与天体物理 Q3 PHYSICS, CONDENSED MATTER Pub Date : 2024-09-17 DOI: 10.1016/j.ssc.2024.115698
Amjad Khan , Muhammad Saeed , Aijaz Rasool Chaudhry , Muhammad Awais Jehangir , Muhammad Ibrar , G. Murtaza

Double perovskites have gathered momentous attention due to their structural, optoelectronics, and thermal properties. FP-LAPW + lo technique was employed along with the PBEsol-GGA and TB-mBJ potential. The optimized parameters and E-V parabolic curve were computed employing Birch Murnaghan's equation of state (BM-EOS). The negative formation energy Ef for Rb2YCuCl6 and Cs2YCuCl6 confirms the thermodynamic stability of these double perovskites. The mechanical stability of both compounds was confirmed by their elastic constants Cij, Pugh's ratio, and anisotropy. The indirect band plots of Rb2YCuCl6 (2.57eV) and Cs2YCuCl6 (2.39eV) double perovskites confirm the semiconductor nature. The optical properties like dielectric function, reflectivity, optical conductivity, absorption coefficient, and energy loss function were determined within an energy range of up to 18 eV. The high absorption spectra for the under-study compounds 147.21 × 104 cm−1 at 14.60 eV for Rb2YCuCl6 and 261.30 × 104 cm−1 at 15.57 eV for Cs2YCuCl6 lies in the far UV region determines its potential use in the high-frequency devices. The thermoelectric properties such as the Seebeck coefficient, ZT, and power factor, are investigated using the semi-classical Boltzmann theory implemented in the BoltzTrap code. The peak value of ZT for Rb2YCuCl6 is 0.38 and for Cs2YCuCl6 is 0.33. The suggested findings indicate that Rb2YCuCl6 and Cs2YCuCl6 are potential candidates for thermoelectric and photovoltaic applications.

双包晶因其结构、光电和热性能而备受关注。研究采用了 FP-LAPW + lo 技术以及 PBEsol-GGA 和 TB-mBJ 电位。利用 Birch Murnaghan 状态方程(BM-EOS)计算了优化参数和 E-V 抛物线。Rb2YCuCl6 和 Cs2YCuCl6 的负形成能 Ef 证实了这些双包晶石的热力学稳定性。这两种化合物的弹性常数 Cij、普氏比和各向异性证实了它们的机械稳定性。Rb2YCuCl6(2.57eV)和 Cs2YCuCl6(2.39eV)双包晶的间接能带图证实了其半导体性质。在高达 18eV 的能量范围内测定了介电函数、反射率、光导率、吸收系数和能量损失函数等光学特性。研究中的化合物在 14.60 eV 时的吸收光谱为 147.21 × 104 cm-1(铷2YCuCl6),在 15.57 eV 时的吸收光谱为 261.30 × 104 cm-1(铯2YCuCl6),这些光谱都位于远紫外区,这决定了它们在高频设备中的潜在用途。利用 BoltzTrap 代码中的半经典波尔兹曼理论研究了塞贝克系数、ZT 和功率因数等热电性能。Rb2YCuCl6 的 ZT 峰值为 0.38,Cs2YCuCl6 的 ZT 峰值为 0.33。研究结果表明,Rb2YCuCl6 和 Cs2YCuCl6 是热电和光伏应用的潜在候选材料。
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引用次数: 0
Angle-dependent Hall resistivity and longitudinal resistivity of type-II superconductor II 型超导体随角度变化的霍尔电阻率和纵向电阻率
IF 2.1 4区 物理与天体物理 Q3 PHYSICS, CONDENSED MATTER Pub Date : 2024-09-13 DOI: 10.1016/j.ssc.2024.115697
Luu Huu Nguyen , Tran Ky Vi , Nguyen Chinh Cuong , Bui Duc Tinh

We use time-dependent Ginzburg–Landau theory in a three-dimensional model, including thermal noise, to analyze angle-dependent Hall resistivity and longitudinal resistivity of type-II superconductor. The Hall resistivity and longitudinal resistivity are calculated as functions of temperature, magnetic field and the angle θ between the magnetic field and the ab-plane in the vortex-liquid regime. Our theoretical calculations within a self-consistent fluctuation approximation for MgB2 and HgBa2CaCu2O6 materials are in good agreements with the experimental findings for both below and above the critical temperature Tc. We observe that when the field angle decreases, the transition temperature increases and the magnitude of longitudinal resistivity decreases, which is qualitatively comparable to decrease of the perpendicular field component. However, when the magnetic field direction approaches the layer surface, it shows a clear different effect from that of a perpendicular field with the same normal component.

我们在一个包含热噪声的三维模型中使用随时间变化的金兹堡-朗道理论,分析了 II 型超导体随角度变化的霍尔电阻率和纵向电阻率。霍尔电阻率和纵向电阻率是作为温度、磁场以及涡流液态下磁场与 ab 平面夹角 θ 的函数来计算的。在自洽波动近似条件下,我们对 MgB2 和 HgBa2CaCu2O6 材料的理论计算结果与低于和高于临界温度 Tc 的实验结果非常吻合。我们观察到,当磁场角度减小时,转变温度升高,纵向电阻率的大小减小,这与垂直磁场分量的减小有本质上的相似性。然而,当磁场方向接近磁层表面时,其效果明显不同于具有相同法向分量的垂直磁场。
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引用次数: 0
Effects of Co/CoNi ratio on elemental occupancy tendencies and lattice misfit of γ/γ′ phases in precipitation-strengthened alloys 钴/镍比对沉淀强化合金中 γ/γ′ 相的元素占位倾向和晶格错配的影响
IF 2.1 4区 物理与天体物理 Q3 PHYSICS, CONDENSED MATTER Pub Date : 2024-09-12 DOI: 10.1016/j.ssc.2024.115696
Congcong Xue , Haoyang Yu , Tiexu Peng , Chang Liu , Yang Long , Jia Li , Fuxing Yin , wei Fang

Occupancy tendencies of elements significantly differ in precipitation-strengthened Ni-based, CoNi-based, and Co-based alloys, which further affect the γ/γ′ lattice misfit and mechanical properties, but relevant research is lacking. In this work, occupancy tendencies of doping elements (Ta, W, Cr, Fe, Mo, Re, Ti, V) and lattice misfit of γ and γ′ phases in precipitation-strengthened alloys dependent on Co/CoNi ratios have been systematically studied through first-principles calculations. The results show that the tendency of all eight elements to occupy the γ′-Al sublattice site increases with the increase of the Co/CoNi ratio, and the tendency to occupy the γ-Ni/Co site all decreases. The occupancy tendencies of these elements exhibit a strong correlation with the Co/CoNi ratio. Lattice misfit gradually increases as the Co/CoNi ratio is raised. Notably, element Ta has the greatest influence on lattice misfit. The appropriate Co/CoNi ratio is conducive to synergistically enhancing high entropy effects and lattice distortion effects for matrix and Ni3Al precipitate phase, and regulating reasonable lattice misfit, which is beneficial for the design of precipitation-strengthened alloys with excellent strength-ductility balance.

沉淀强化镍基合金、钴镍基合金和钴基合金中元素的占据倾向存在显著差异,这进一步影响了γ/γ′晶格错配和力学性能,但相关研究还很缺乏。本文通过第一性原理计算,系统研究了沉淀强化合金中掺杂元素(Ta、W、Cr、Fe、Mo、Re、Ti、V)的占位趋势以及γ相和γ′相的晶格错位与 Co/CoNi 比的关系。结果表明,所有八种元素占据γ′-Al亚晶格位点的倾向都随着Co/CoNi比的增大而增大,占据γ-Ni/Co位点的倾向则全部减小。这些元素的占据倾向与 Co/CoNi 比率有很强的相关性。随着 Co/CoNi 比率的升高,晶格错配逐渐增加。值得注意的是,元素 Ta 对晶格失配的影响最大。适当的 Co/CoNi 比有利于协同增强基体和 Ni3Al 沉淀相的高熵效应和晶格畸变效应,调节合理的晶格错配,从而有利于设计出具有优异强度-电导平衡的沉淀强化合金。
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引用次数: 0
Simulation study of cadmium-free CIGS solar cell for efficiency enhancement by minimizing recombination losses through back surface field mechanism 无镉铜铟镓硒太阳能电池模拟研究:通过背表面电场机制最大限度地减少重组损耗以提高效率
IF 2.1 4区 物理与天体物理 Q3 PHYSICS, CONDENSED MATTER Pub Date : 2024-09-12 DOI: 10.1016/j.ssc.2024.115694
Alok Kumar , Sushama M. Giripunje , Alok Kumar Patel , Shivani Gohri
Thin-film photovoltaic cells provide benefits over conventional first-generation technology, including lighter weight, greater flexibility, and lower power generation costs. Chalcogenide solar cells offer good efficiency and technological maturity among thin-film technology. In this work, a solar cell device structure, Al/FTO/SnS2/CIGS/CuO/Ni, is examined using SCAPS-1D. Further, by incorporating the back surface field (BSF) layer, the conversion efficiency increased from 18.93 % to 29.88 %, followed by VOC of 0.96 V, JSC of 37.07 mA cm−2, and FF of 83.71 %. This increment in device performance is owing to the lowering back surface recombination velocity and the additional hole tunnelling activity offered by the BSF layer by forming a quasi-ohmic contact, i.e. metal-semiconductor contact with negligible junction resistance relative to the total resistance of the device. Throughout this research work, the authors studied several factors such as surface recombination velocity, temperature impact, front and back contact metal work functions, parasitic resistance impact, gallium proportion, and doping density impact on CIGS solar cells. The work also included a calibration with experimental data from published sources to validate the simulation results.
This paper presents a new approach for producing high-efficiency, eco-friendly CIGS solar cells with CuO back surface field mechanism.
与传统的第一代技术相比,薄膜光伏电池具有重量轻、灵活性强、发电成本低等优点。在薄膜技术中,卤化物太阳能电池具有良好的效率和成熟的技术。本研究利用 SCAPS-1D 对 Al/FTO/SnS2/CIGS/CuO/Ni 太阳能电池设备结构进行了研究。此外,通过加入背表面电场(BSF)层,转换效率从 18.93% 提高到 29.88%,VOC 为 0.96 V,JSC 为 37.07 mA cm-2,FF 为 83.71%。器件性能的提高归功于 BSF 层通过形成准欧姆接触(即结电阻相对于器件总电阻可忽略不计的金属-半导体接触)降低了背面重组速度,并提供了额外的空穴隧穿活动。在整个研究工作中,作者研究了多个因素,如表面重组速度、温度影响、前后接触金属功函数、寄生电阻影响、镓比例和掺杂密度对 CIGS 太阳能电池的影响。本文提出了一种利用 CuO 背表面场机制生产高效、环保 CIGS 太阳能电池的新方法。
{"title":"Simulation study of cadmium-free CIGS solar cell for efficiency enhancement by minimizing recombination losses through back surface field mechanism","authors":"Alok Kumar ,&nbsp;Sushama M. Giripunje ,&nbsp;Alok Kumar Patel ,&nbsp;Shivani Gohri","doi":"10.1016/j.ssc.2024.115694","DOIUrl":"10.1016/j.ssc.2024.115694","url":null,"abstract":"<div><div>Thin-film photovoltaic cells provide benefits over conventional first-generation technology, including lighter weight, greater flexibility, and lower power generation costs. Chalcogenide solar cells offer good efficiency and technological maturity among thin-film technology. In this work, a solar cell device structure, Al/FTO/SnS<sub>2</sub>/CIGS/CuO/Ni, is examined using SCAPS-1D. Further, by incorporating the back surface field (BSF) layer, the conversion efficiency increased from 18.93 % to 29.88 %, followed by V<sub>OC</sub> of 0.96 V, J<sub>SC</sub> of 37.07 mA cm<sup>−2</sup>, and FF of 83.71 %. This increment in device performance is owing to the lowering back surface recombination velocity and the additional hole tunnelling activity offered by the BSF layer by forming a quasi-ohmic contact, i.e. metal-semiconductor contact with negligible junction resistance relative to the total resistance of the device. Throughout this research work, the authors studied several factors such as surface recombination velocity, temperature impact, front and back contact metal work functions, parasitic resistance impact, gallium proportion, and doping density impact on CIGS solar cells. The work also included a calibration with experimental data from published sources to validate the simulation results.</div><div>This paper presents a new approach for producing high-efficiency, eco-friendly CIGS solar cells with CuO back surface field mechanism.</div></div>","PeriodicalId":430,"journal":{"name":"Solid State Communications","volume":"394 ","pages":"Article 115694"},"PeriodicalIF":2.1,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142326485","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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Solid State Communications
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