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Pressure effect on acoustical overtones in cubic Indium Antimonide 压力对立方锑化铟声学泛音的影响
IF 2.1 4区 物理与天体物理 Q3 PHYSICS, CONDENSED MATTER Pub Date : 2024-11-21 DOI: 10.1016/j.ssc.2024.115766
Taras Palasyuk , Cezariusz Jastrzebski , Igor Antoniazzi , Maciej R. Molas , Krzysztof Zberecki , Elzbieta Litwin-Staszewska , Aleksander Khachapuridze , Adam Babinski , Izabella Grzegory , Sylwester Porowski
The influence of pressure on the light scattering properties of low-energy acoustical phonons in cubic Indium Antimonide (InSb) has been investigated by Raman spectroscopy. By implementing optical Bragg filters, the overtone scattering from transverse acoustical phonons near the X point of Brillouin zone (2TA(X)) could be measured in an explicit manner allowing for analysis of its lineshape. Accordingly, a significant line broadening was detected for this phonon mode corroborating our previous suggestion of considerable anharmonicity of the transverse lattice vibration upon compression at room temperature. Herein reported new results of density functional theory (DFT) calculations indicated similar pressure dependence for overtones of acoustical phonons near the X and the K critical points that plausibly accounted for the lack of energy discrimination between 2TA(X) and 2TA(K) modes in spectroscopic measurements under pressure.
利用拉曼光谱研究了压力对立方锑化铟(InSb)中低能声子光散射特性的影响。通过实现光学布拉格滤波器,可以以明确的方式测量布里渊区(2TA(X)) X点附近的横向声子的泛音散射,从而分析其线形。因此,在声子模式中检测到明显的谱线拓宽,证实了我们之前提出的在室温下压缩时横向晶格振动的相当大的非调和性。本文报道的密度泛函理论(DFT)计算的新结果表明,声子在X和K临界点附近的泛音具有相似的压力依赖性,这合理地解释了在压力下光谱测量中2TA(X)和2TA(K)模式之间缺乏能量区分。
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引用次数: 0
Carrier localization in defected areas of (Cd, Mn)Te quantum well investigated via Optically Detected Magnetic Resonance employed in the microscale 通过微尺度光检测磁共振研究(Cd, Mn)Te 量子阱缺陷区的载流子定位情况
IF 2.1 4区 物理与天体物理 Q3 PHYSICS, CONDENSED MATTER Pub Date : 2024-11-19 DOI: 10.1016/j.ssc.2024.115755
A. Dydniański , A. Łopion , M. Raczyński , T. Kazimierczuk , K.E. Połczyńska , W. Pacuski , P. Kossacki
In this work, we study the impact of carrier localization on three quantities sensitive to carrier gas density at the micrometer scale: charged exciton (X+) oscillator strength, local free carrier conductivity, and the Knight shift. The last two are observed in a micrometer-scale, spatially resolved optically detected magnetic resonance experiment (ODMR). On the surface of MBE-grown (Cd,Mn)Te quantum well we identify defected areas in the vicinity of dislocations. We find that these areas show a much lower conductivity signal than the pristine part of the sample, while Knight shift values remain approximately unchanged. We attribute this behavior to carrier localization in the defected regions.
在这项工作中,我们研究了载流子定位对微米尺度载流子气体密度敏感的三个量的影响:带电激子(X+)振荡器强度、局部自由载流子电导率和奈特位移。在微米尺度的空间分辨光学检测磁共振实验(ODMR)中观察到了后两个量。在 MBE 生长的(Cd,Mn)Te 量子阱表面,我们确定了位错附近的缺陷区域。我们发现,这些区域显示的电导信号比样品的原始部分低得多,而奈特位移值大致保持不变。我们将这种行为归因于缺陷区域的载流子局域化。
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引用次数: 0
Spin-lattice relaxation of (Cd,Mn)Te co-doped with Co ions 共掺杂 Co 离子的 (Cd,Mn)Te 的自旋晶格弛豫
IF 2.1 4区 物理与天体物理 Q3 PHYSICS, CONDENSED MATTER Pub Date : 2024-11-19 DOI: 10.1016/j.ssc.2024.115753
A. Łopion , K. Oreszczuk , A. Bogucki , K.E. Połczyńska , W. Pacuski , T. Kazimierczuk , A. Golnik , P. Kossacki
We study the influence of the addition of the Co ions on the spin-lattice relaxation rate in the (Cd,Mn)Te system. The magnetization relaxation is measured by time-resolved spectroscopy of single (Cd,Mn,Co)Te/(Cd,Mg)Te quantum wells in a magnetic field. We find that even a relatively small cobalt admixture significantly shortens the Mn relaxation time.
我们研究了 Co 离子的加入对 (Cd,Mn)Te 体系中自旋晶格弛豫速率的影响。在磁场中,我们通过时间分辨光谱法测量了单(Cd,Mn,Co)Te/(Cd,Mg)Te 量子阱的磁化弛豫。我们发现,即使掺入相对较少的钴,也会显著缩短锰的弛豫时间。
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引用次数: 0
Tailoring structural, morphological, and magnetic properties of Sr0.54Ca0.46Fe6.5-xNixAl5.5O19 hexaferrites via Ni substitution 通过镍替代调整 Sr0.54Ca0.46Fe6.5-xNixAl5.5O19 六元晶的结构、形态和磁性能
IF 2.1 4区 物理与天体物理 Q3 PHYSICS, CONDENSED MATTER Pub Date : 2024-11-16 DOI: 10.1016/j.ssc.2024.115760
S. Elkhouad , Z. Yamkane , M. Sadik , R. Moubah , M. Moutataouia , H. Lassri , L. Bessais , J. Horcheni , H. Jaballah , M. Abdellaoui
Sr0.54Ca0,46Fe6.5-xNixAl5.5O19 (0 ≤ x ≤ 0.3) hexaferrite powders were prepared by the sol-gel auto combustion method and characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy-dispersive X-ray spectroscopy (EDX). Magnetic measurements were performed with physical properties measurement system (PPMS). The lattice parameters, volume, and lattice strain were calculated. XRD analyses revealed a reduction in crystallite size with increasing Ni content. Interestingly, the magnetic analysis indicated that nickel, with its low magnetic moment, significantly enhanced the magnetization of Sr0.54Ca0.46Fe6.5-xNixAl5.5O19 (0.0 ≤ x ≤ 0.3) and reduced the coercive field. Furthermore, the Law of Approach to Saturation (LAS) theory was employed to extract the first anisotropy constant, the anisotropy field, and several essential magnetic parameters, providing valuable insights into the magnetic behavior of samples.
采用溶胶-凝胶自动燃烧法制备了 Sr0.54Ca0,46Fe6.5-xNixAl5.5O19 (0 ≤ x ≤ 0.3) 六价铁氧体粉末,并使用 X 射线衍射 (XRD)、扫描电子显微镜 (SEM) 和能量色散 X 射线光谱 (EDX) 对其进行了表征。磁性测量采用物理性质测量系统(PPMS)进行。计算了晶格参数、体积和晶格应变。XRD 分析表明,随着镍含量的增加,晶粒尺寸减小。有趣的是,磁性分析表明,镍的低磁矩显著增强了 Sr0.54Ca0.46Fe6.5-xNixAl5.5O19(0.0 ≤ x ≤ 0.3)的磁化,并降低了矫顽力场。此外,还利用饱和定律(LAS)理论提取了第一各向异性常数、各向异性场和几个基本磁性参数,为了解样品的磁性行为提供了宝贵的见解。
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引用次数: 0
Temperature-driven evolution of hematite (α-Fe2O3) nanoparticles: A study on structural, morphological and magnetic properties 赤铁矿(α-Fe2O3)纳米粒子的温度驱动演化:结构、形态和磁性能研究
IF 2.1 4区 物理与天体物理 Q3 PHYSICS, CONDENSED MATTER Pub Date : 2024-11-16 DOI: 10.1016/j.ssc.2024.115761
Rohit Duglet, Deepika Sharma, Vijay Singh, Dheeraj Sharma, M. Singh
This report explores the impact of annealing temperature on the structural and magnetic properties of hematite (α-Fe2O3) nanoparticles synthesized via the sol-gel auto-combustion method. The samples were annealed at 500 °C, 700 °C, and 900 °C, and characterized using XRD, FE-SEM, FT-IR, and VSM techniques. XRD analysis revealed an increase in crystallite size from 28.35 nm to 47.65 nm with temperature, accompanied by changes in lattice parameters, cell volume, and a reduction in dislocation density. Grain size distribution, observed via FE-SEM, showed a growth trend corresponding to the annealing temperatures, with sizes ranging from 114.8 nm to 167.8 nm. Energy dispersive X-ray spectroscopy (EDAX) verifies the elemental composition. FT-IR analysis revealed characteristic Fe-O vibrational bands between 430 and 525 cm⁻1, corresponding to Fe-O deformation in octahedral and tetrahedral sites. Subtle shifts in these bands with increasing temperature reflect structural changes in the nanoparticles. Magnetic characterization exhibited a decrease in saturation magnetization (MS) from 2.96 emu/g at 500 °C to 0.74 emu/g at 900 °C, while coercivity (HC) increased from 643.2 Oe to 1161.1 Oe, reflecting the influence of temperature on the magnetic domain structure. The observed relationship between the structural evolution and magnetic behavior underscores the potential of annealing to optimize α-Fe₂O₃ nanoparticles for use in magnetic storage, environmental remediation and multifunctional biomedical applications.
本报告探讨了退火温度对通过溶胶-凝胶自燃法合成的赤铁矿(α-Fe2O3)纳米粒子的结构和磁性能的影响。样品分别在 500 ℃、700 ℃ 和 900 ℃ 下退火,并使用 XRD、FE-SEM、FT-IR 和 VSM 技术对其进行表征。XRD 分析表明,随着温度的升高,晶体尺寸从 28.35 nm 增加到 47.65 nm,同时晶格参数、晶胞体积也发生了变化,位错密度降低。通过 FE-SEM 观察到的晶粒尺寸分布显示出与退火温度相对应的增长趋势,尺寸范围从 114.8 nm 到 167.8 nm。能量色散 X 射线光谱(EDAX)验证了元素组成。傅立叶变换红外光谱分析显示了 430 和 525 cm-1 之间的 Fe-O 特征振动带,这些振动带与八面体和四面体位点的 Fe-O 变形相对应。随着温度的升高,这些频带发生了微妙的变化,反映了纳米粒子的结构变化。磁性表征显示,饱和磁化率(MS)从 500 °C 时的 2.96 emu/g 降至 900 °C 时的 0.74 emu/g,而矫顽力(HC)则从 643.2 Oe 增至 1161.1 Oe,反映了温度对磁畴结构的影响。观察到的结构演变与磁性行为之间的关系强调了退火在优化α-Fe₂O₃纳米粒子以用于磁存储、环境修复和多功能生物医学应用方面的潜力。
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引用次数: 0
Tuning band gap and improving optoelectronic properties of lead-free halide perovskites FrMI3 (M = Ge, Sn) under hydrostatic pressure 在静水压力下调整无铅卤化物包晶 FrMI3(M = Ge、Sn)的带隙并改善其光电特性
IF 2.1 4区 物理与天体物理 Q3 PHYSICS, CONDENSED MATTER Pub Date : 2024-11-15 DOI: 10.1016/j.ssc.2024.115759
Md. Rabbi Talukder , Wahidur Rahman Sajal , Md. Safin Alam , Fatema-Tuz -Zahra , Jahirul Islam
In the field of optoelectronic applications, inorganic cubic halide perovskites have turned into a leading choice for commercialization. The physical properties of cubic FrMI3 (M = Ge, Sn) halide perovskites under pressure are explored at multiple pressures up to 10 GPa using ab initio Density-Functional Theory due to their significant importance. The structural accuracy, reflected in lattice parameters and unit cell volume, closely corresponds to previously reported data. FrGeI3 and FrSnI3 exhibited direct electronic band gaps of 0.65 eV and 0.46 eV with GGA-PBE functional, respectively, indicating their semiconducting nature at 0 GPa. The enhanced band gaps obtained employing the HSE06 potential are 1.61 eV and 1.28 eV for the corresponding perovskites. FrGeI3 and FrSnI3 shift from semiconducting to metallic states under pressures of 4.5 GPa and 3 GPa, respectively, thereby enhancing the conductivity. Pressure also improves optical functions, indicating both perovskites may be employed in high-efficiency optoelectronic devices that operate within the visible and ultra-violet (UV) range. At 10 GPa pressure, both FrGeI3 and FrSnI3 demonstrate the sharpest absorption spikes in the UV region, approximately at 2.61 × 105 cm−1 and 2.42 × 105 cm−1, respectively, resulting in sharp peaks in optical conductivity of approximately 5.98 1/fs for FrGeI3 and 5.49 1/fs for FrSnI3. FrGeI3 consistently outperforms FrSnI3, offering superior electronic and optical characteristics. Additionally, pressure modifies the mechanical features of entitled perovskites while conserving stability. The anisotropic and ductile properties become more pronounced under pressure. The outcomes of this study are expected to propel the advancement of lead-free optoelectronic devices, driving innovation in sustainable energy solutions.
在光电应用领域,无机立方卤化物包晶已成为商业化的主要选择。由于立方FrMI3(M = Ge、Sn)卤化物包晶石的重要性,本研究采用ab initio 密度-函数理论在高达 10 GPa 的多个压力下对其物理性质进行了探索。反映在晶格参数和单胞体积上的结构精度与之前报告的数据非常吻合。利用 GGA-PBE 函数,FrGeI3 和 FrSnI3 的直接电子带隙分别为 0.65 eV 和 0.46 eV,这表明它们在 0 GPa 时具有半导体性质。利用 HSE06 电位得到的相应过氧化物的增强带隙分别为 1.61 eV 和 1.28 eV。FrGeI3 和 FrSnI3 分别在 4.5 GPa 和 3 GPa 的压力下从半导体态转变为金属态,从而提高了导电性。压力还能改善光学功能,这表明这两种包晶均可用于在可见光和紫外线(UV)范围内工作的高效光电设备。在 10 GPa 压力下,FrGeI3 和 FrSnI3 在紫外区都表现出最尖锐的吸收峰值,分别约为 2.61 × 105 cm-1 和 2.42 × 105 cm-1,从而使 FrGeI3 和 FrSnI3 的光导率分别达到约 5.98 1/fs 和 5.49 1/fs 的尖锐峰值。FrGeI3 的电子和光学特性始终优于 FrSnI3。此外,压力在保持稳定的同时,也改变了有权利的过氧化物晶石的机械特性。各向异性和延展性在压力作用下变得更加明显。这项研究的成果有望推动无铅光电设备的发展,推动可持续能源解决方案的创新。
{"title":"Tuning band gap and improving optoelectronic properties of lead-free halide perovskites FrMI3 (M = Ge, Sn) under hydrostatic pressure","authors":"Md. Rabbi Talukder ,&nbsp;Wahidur Rahman Sajal ,&nbsp;Md. Safin Alam ,&nbsp;Fatema-Tuz -Zahra ,&nbsp;Jahirul Islam","doi":"10.1016/j.ssc.2024.115759","DOIUrl":"10.1016/j.ssc.2024.115759","url":null,"abstract":"<div><div>In the field of optoelectronic applications, inorganic cubic halide perovskites have turned into a leading choice for commercialization. The physical properties of cubic FrMI<sub>3</sub> (M = Ge, Sn) halide perovskites under pressure are explored at multiple pressures up to 10 GPa using ab initio Density-Functional Theory due to their significant importance. The structural accuracy, reflected in lattice parameters and unit cell volume, closely corresponds to previously reported data. FrGeI<sub>3</sub> and FrSnI<sub>3</sub> exhibited direct electronic band gaps of 0.65 eV and 0.46 eV with GGA-PBE functional, respectively, indicating their semiconducting nature at 0 GPa. The enhanced band gaps obtained employing the HSE06 potential are 1.61 eV and 1.28 eV for the corresponding perovskites. FrGeI<sub>3</sub> and FrSnI<sub>3</sub> shift from semiconducting to metallic states under pressures of 4.5 GPa and 3 GPa, respectively, thereby enhancing the conductivity. Pressure also improves optical functions, indicating both perovskites may be employed in high-efficiency optoelectronic devices that operate within the visible and ultra-violet (UV) range. At 10 GPa pressure, both FrGeI<sub>3</sub> and FrSnI<sub>3</sub> demonstrate the sharpest absorption spikes in the UV region, approximately at 2.61 × 10<sup>5</sup> cm<sup>−1</sup> and 2.42 × 10<sup>5</sup> cm<sup>−1</sup>, respectively, resulting in sharp peaks in optical conductivity of approximately 5.98 1/fs for FrGeI<sub>3</sub> and 5.49 1/fs for FrSnI<sub>3</sub>. FrGeI<sub>3</sub> consistently outperforms FrSnI<sub>3</sub>, offering superior electronic and optical characteristics. Additionally, pressure modifies the mechanical features of entitled perovskites while conserving stability. The anisotropic and ductile properties become more pronounced under pressure. The outcomes of this study are expected to propel the advancement of lead-free optoelectronic devices, driving innovation in sustainable energy solutions.</div></div>","PeriodicalId":430,"journal":{"name":"Solid State Communications","volume":"396 ","pages":"Article 115759"},"PeriodicalIF":2.1,"publicationDate":"2024-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142661618","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The theoretical investigation of the electronic and optical properties of Fe-doped anatase TiO2 掺杂铁的锐钛矿二氧化钛的电子和光学特性的理论研究
IF 2.1 4区 物理与天体物理 Q3 PHYSICS, CONDENSED MATTER Pub Date : 2024-11-14 DOI: 10.1016/j.ssc.2024.115758
Fatemeh Badieian Baghsiyahi, Mahbubeh Yeganeh
In this work, electronic structure and optical properties of Fe-doped TiO2 at Fe/Ti ratios of 0, 5, 8.3, and 10 % were investigated based on density functional theory. The appearance of the asymmetrical patterns in the spin-polarized density of states of the doped samples reveals the occurrence of magnetism due to doping. The presence of impurity levels in the spin-up channel by hybridization of the O 2p, Fe 3d, and Ti 3d results in the reduction of the band gap in Fe-doped samples. The optical properties in spin-up channels showed significant changes at low energy regions (<2.5 eV), and optical absorption is found to increase by Fe doping.
在这项研究中,基于密度泛函理论研究了铁/钛比为 0%、5%、8.3% 和 10% 的掺铁二氧化钛的电子结构和光学特性。掺杂样品自旋极化态密度中出现的不对称图案揭示了掺杂导致的磁性。由于 O 2p、Fe 3d 和 Ti 3d 的杂化,自旋上升通道中出现了杂质水平,导致掺杂铁的样品带隙减小。自旋上升沟道中的光学特性在低能区(2.5 eV)发生了显著变化,掺杂铁后光吸收增加。
{"title":"The theoretical investigation of the electronic and optical properties of Fe-doped anatase TiO2","authors":"Fatemeh Badieian Baghsiyahi,&nbsp;Mahbubeh Yeganeh","doi":"10.1016/j.ssc.2024.115758","DOIUrl":"10.1016/j.ssc.2024.115758","url":null,"abstract":"<div><div>In this work, electronic structure and optical properties of Fe-doped TiO<sub>2</sub> at Fe/Ti ratios of 0, 5, 8.3, and 10 % were investigated based on density functional theory. The appearance of the asymmetrical patterns in the spin-polarized density of states of the doped samples reveals the occurrence of magnetism due to doping. The presence of impurity levels in the spin-up channel by hybridization of the O 2p, Fe 3d, and Ti 3d results in the reduction of the band gap in Fe-doped samples. The optical properties in spin-up channels showed significant changes at low energy regions (&lt;2.5 eV), and optical absorption is found to increase by Fe doping.</div></div>","PeriodicalId":430,"journal":{"name":"Solid State Communications","volume":"396 ","pages":"Article 115758"},"PeriodicalIF":2.1,"publicationDate":"2024-11-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142661703","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Chemical and structural features of spin-coated magnesium oxide (MgO) and its impact on the barrier parameters and current conduction process of Au/undoped-InP Schottky contact as an interfacial layer 旋涂氧化镁 (MgO) 的化学和结构特征及其对作为界面层的金/未掺杂 InP 肖特基触点的势垒参数和电流传导过程的影响
IF 2.1 4区 物理与天体物理 Q3 PHYSICS, CONDENSED MATTER Pub Date : 2024-11-13 DOI: 10.1016/j.ssc.2024.115757
S. Sai Krupa , D. Surya Reddy , V. Rajagopal Reddy , Chel-Jong Choi
This work examines the structural and chemical characteristics of spin-coated magnesium oxide (MgO) on undoped InP (un-InP) and its effects on the barrier parameters and current transport phenomena in the Au/un-InP Schottky contact (SC). Using XRD and XPS, the structural and chemical features of MgO are assessed, confirming that the MgO was deposited on un-InP. The current-voltage (log(I)-V) features were measured for the SC and Au/MgO/un-InP metal/insulator/semiconductor (MIS)-type Schottky contact. The MIS contact revealed an excellent rectification behavior as compared to the SC. The calculated barrier height (Φb) was higher for the MIS contact (0.61 eV) than the SC (0.52 eV), which implies that the MgO interlayer influences the Φb of the SC. The Φb was also estimated using the Cheung's, Mikhelashvili and Norde procedures, the values are similar, indicating their stability and reliability. The acquired interface state density (NSS) of the MIS contact was less than the SC, proving that the MgO interlayer reduced the NSS. The ohmic behavior was observed in the lower bias region for the SC and MIS contacts, while the trap-free space-charge-limited current (SCLC) was noted in the moderate and upper bias regions of the MIS contact under forward bias. Poole-Frenkel emission (PFE) governs at a lower bias, while Schottky emission (SE) dominates at the upper bias of SC and MIS contacts under reverse bias. These findings demonstrate the potential application of MgO interlayer in advancing electronic devices.
这项研究探讨了未掺杂 InP(un-InP)上旋涂氧化镁(MgO)的结构和化学特性及其对金/未掺杂 InP 肖特基接触(SC)中的势垒参数和电流传输现象的影响。利用 XRD 和 XPS 评估了氧化镁的结构和化学特征,证实氧化镁沉积在未掺杂 InP 上。测量了SC和金/氧化镁/未铟磷金属/绝缘体/半导体(MIS)型肖特基触点的电流-电压(log(I)-V)特征。与 SC 相比,MIS 触点具有出色的整流性能。计算得出的 MIS 触点的势垒高度(Φb)(0.61 eV)高于 SC(0.52 eV),这意味着 MgO 中间层影响了 SC 的Φb。此外,还使用 Cheung's、Mikhelashvili 和 Norde 程序估算了 Φb 值,其值相近,表明其稳定性和可靠性。MIS 触点获得的界面态密度(NSS)小于 SC,证明氧化镁夹层降低了 NSS。在正向偏压下,SC 和 MIS 触点在低偏压区观察到欧姆行为,而 MIS 触点在中等偏压区和高偏压区观察到无阱空间电荷限制电流(SCLC)。在反向偏压下,普尔-弗伦克尔发射(PFE)在较低偏压下占主导地位,而肖特基发射(SE)则在 SC 和 MIS 触点的较高偏压下占主导地位。这些发现证明了氧化镁中间膜在先进电子器件中的潜在应用。
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引用次数: 0
Spectral management and current matching optimization for high-efficiency perovskite-CIGS-SnS triple junction tandem solar cells 高效率过氧化物-CIGS-SnS 三结串联太阳能电池的光谱管理和电流匹配优化
IF 2.1 4区 物理与天体物理 Q3 PHYSICS, CONDENSED MATTER Pub Date : 2024-11-12 DOI: 10.1016/j.ssc.2024.115754
Shivani Gohri, Jaya Madan, Rahul Pandey
Low-cost materials are used in this work to make a triple-junction tandem solar cell (TSC). Two-step filtered spectrum and current matching techniques are used to design a perovskite-CIGS-SnS based TSC using a SCAPS-1D simulator. To design a TSC, the top cell (TC) is illuminated with a 1.5AM spectrum, and the unabsorbed spectrum of the TC is utilized for the middle cell (MC). Similarly, the unabsorbed spectrum of the MC is used to illuminate the bottom cell (BC). Additional merits of this work: the perovskite used is a two-dimensional Dion Jacobson (DJ) perovskite, which is more stable than conventional perovskites. The results show that current matching is obtained at active layer thickness (nm) of 365/600/100 for TC/MC/BC, respectively. The proposed solar cell shows a remarkable PV performance of 3.25 V VOC, 9.42 mA/cm2 JSC, 79.3 % FF and 24.27 % PCE.
本研究使用低成本材料制造三结串联太阳能电池(TSC)。利用 SCAPS-1D 模拟器,采用两步滤波光谱和电流匹配技术设计了一种基于包晶-CIGS-SnS 的 TSC。为设计 TSC,顶部电池 (TC) 采用 1.5AM 光谱照明,中间电池 (MC) 则采用 TC 的未吸收光谱。同样,MC 的未吸收光谱用于照亮底部电池 (BC)。这项工作的其他优点:所使用的过氧化物是二维 Dion Jacobson (DJ) 过氧化物,比传统过氧化物更稳定。结果表明,TC/MC/BC 的有源层厚度(纳米)分别为 365/600/100 时,可实现电流匹配。所提出的太阳能电池具有显著的光伏性能:3.25 V VOC、9.42 mA/cm2 JSC、79.3 % FF 和 24.27 % PCE。
{"title":"Spectral management and current matching optimization for high-efficiency perovskite-CIGS-SnS triple junction tandem solar cells","authors":"Shivani Gohri,&nbsp;Jaya Madan,&nbsp;Rahul Pandey","doi":"10.1016/j.ssc.2024.115754","DOIUrl":"10.1016/j.ssc.2024.115754","url":null,"abstract":"<div><div>Low-cost materials are used in this work to make a triple-junction tandem solar cell (TSC). Two-step filtered spectrum and current matching techniques are used to design a perovskite-CIGS-SnS based TSC using a SCAPS-1D simulator. To design a TSC, the top cell (TC) is illuminated with a 1.5AM spectrum, and the unabsorbed spectrum of the TC is utilized for the middle cell (MC). Similarly, the unabsorbed spectrum of the MC is used to illuminate the bottom cell (BC). Additional merits of this work: the perovskite used is a two-dimensional Dion Jacobson (DJ) perovskite, which is more stable than conventional perovskites. The results show that current matching is obtained at active layer thickness (nm) of 365/600/100 for TC/MC/BC, respectively. The proposed solar cell shows a remarkable PV performance of 3.25 V V<sub>OC</sub>, 9.42 mA/cm<sup>2</sup> J<sub>SC</sub>, 79.3 % FF and 24.27 % PCE.</div></div>","PeriodicalId":430,"journal":{"name":"Solid State Communications","volume":"395 ","pages":"Article 115754"},"PeriodicalIF":2.1,"publicationDate":"2024-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142663983","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High pressure and high temperature synthesis of a new boron carbide phase 高压高温合成新型碳化硼相
IF 2.1 4区 物理与天体物理 Q3 PHYSICS, CONDENSED MATTER Pub Date : 2024-11-12 DOI: 10.1016/j.ssc.2024.115752
Zhenwu Zeng , Jiayu Wang , Can Tian , Fangfei Li , Tian Cui
The dense boron carbide (B-C) phases with diamond structure are predicted to be superhard, with hardness close to that of a cubic boron nitride (c-BN). At ambient conditions, graphite-like BC3 is well characterized, firstly reported by Kouvetakis et al. In this work, we have synthesized a new B-C phase from the graphite-like BC3 in a laser-heated diamond anvil cell. Interestingly, this phase could be recoverable to ambient pressure due to dynamic stabilities. The Raman spectrum and X-ray diffraction patterns give the possible structure of this new phase.
据预测,具有金刚石结构的致密碳化硼(B-C)相具有超硬特性,硬度接近立方氮化硼(c-BN)。在这项工作中,我们在激光加热的金刚石砧槽中从类石墨 BC3 合成了一种新的 B-C 相。有趣的是,由于动态稳定性,这种相可以在环境压力下恢复。拉曼光谱和 X 射线衍射图样给出了这种新相的可能结构。
{"title":"High pressure and high temperature synthesis of a new boron carbide phase","authors":"Zhenwu Zeng ,&nbsp;Jiayu Wang ,&nbsp;Can Tian ,&nbsp;Fangfei Li ,&nbsp;Tian Cui","doi":"10.1016/j.ssc.2024.115752","DOIUrl":"10.1016/j.ssc.2024.115752","url":null,"abstract":"<div><div>The dense boron carbide (B-C) phases with diamond structure are predicted to be superhard, with hardness close to that of a cubic boron nitride (c-BN). At ambient conditions, graphite-like BC<sub>3</sub> is well characterized, firstly reported by Kouvetakis et al. In this work, we have synthesized a new B-C phase from the graphite-like BC<sub>3</sub> in a laser-heated diamond anvil cell. Interestingly, this phase could be recoverable to ambient pressure due to dynamic stabilities. The Raman spectrum and X-ray diffraction patterns give the possible structure of this new phase.</div></div>","PeriodicalId":430,"journal":{"name":"Solid State Communications","volume":"396 ","pages":"Article 115752"},"PeriodicalIF":2.1,"publicationDate":"2024-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142661702","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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Solid State Communications
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