Pub Date : 2021-10-08DOI: 10.1109/APSIT52773.2021.9641402
Neha Singh, S. Jena, C. Panigrahi
This paper describes a detailed model of nonlinear current control techniques. It mainly concentrates on Double Band Hysteresis Current controller (DBHCC) and an improved version of it called IDBHCC for one phase Grid Connected Voltage Source Inverter (GCVSI).LC filter has been used in the inverter to eliminate grid current error. In Combination with DBHCC and IDBHCC, Sliding Mode Control (SMC) has been used to generate inverter pulses. The results are verified through MATLAB simulation.
{"title":"Sliding Mode Controlled IDBHCC for Single phase LC filter PWM Inverter","authors":"Neha Singh, S. Jena, C. Panigrahi","doi":"10.1109/APSIT52773.2021.9641402","DOIUrl":"https://doi.org/10.1109/APSIT52773.2021.9641402","url":null,"abstract":"This paper describes a detailed model of nonlinear current control techniques. It mainly concentrates on Double Band Hysteresis Current controller (DBHCC) and an improved version of it called IDBHCC for one phase Grid Connected Voltage Source Inverter (GCVSI).LC filter has been used in the inverter to eliminate grid current error. In Combination with DBHCC and IDBHCC, Sliding Mode Control (SMC) has been used to generate inverter pulses. The results are verified through MATLAB simulation.","PeriodicalId":436488,"journal":{"name":"2021 International Conference in Advances in Power, Signal, and Information Technology (APSIT)","volume":"97 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134151073","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-10-08DOI: 10.1109/APSIT52773.2021.9641388
R. M. Asif, S. Rehman, A. Rehman, M. Bajaj, S. Choudhury, T. Dash
With the advancement of Semiconductor Technology, FinFET replaces MOSFET. It is one of the frontier devices due to suppressed short channel effects, outstanding performance for high-frequency applications, and better power control. This paper proposed a FinFET structure with different analytical models for drain-current, channel charge, and velocity. The dielectric materials of different underlap lengths for gate oxide have been implemented and compared their performance for SCE. The short channel effects for dielectric materials SiO2, and Al2O3 are also examined. The critical parameters such as threshold gate voltages and drain current, including short channel effects have been evaluated using the proposed model. The transfer and output characteristics have been shown. FinFET with high-k dielectric shows higher Ion/Ioff ratio and reduced threshold voltage. These results validate the proposed model to reduce the SCE.
{"title":"A Comparative Study of Short Channel Effects in 3-D FinFET with High-K Gate Di-electric","authors":"R. M. Asif, S. Rehman, A. Rehman, M. Bajaj, S. Choudhury, T. Dash","doi":"10.1109/APSIT52773.2021.9641388","DOIUrl":"https://doi.org/10.1109/APSIT52773.2021.9641388","url":null,"abstract":"With the advancement of Semiconductor Technology, FinFET replaces MOSFET. It is one of the frontier devices due to suppressed short channel effects, outstanding performance for high-frequency applications, and better power control. This paper proposed a FinFET structure with different analytical models for drain-current, channel charge, and velocity. The dielectric materials of different underlap lengths for gate oxide have been implemented and compared their performance for SCE. The short channel effects for dielectric materials SiO2, and Al2O3 are also examined. The critical parameters such as threshold gate voltages and drain current, including short channel effects have been evaluated using the proposed model. The transfer and output characteristics have been shown. FinFET with high-k dielectric shows higher Ion/Ioff ratio and reduced threshold voltage. These results validate the proposed model to reduce the SCE.","PeriodicalId":436488,"journal":{"name":"2021 International Conference in Advances in Power, Signal, and Information Technology (APSIT)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130034049","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-10-08DOI: 10.1109/APSIT52773.2021.9641206
Dinika D. Pradhan, S. Mali, Ashwini Ubale, M. Sardeshmukh, Swapnalini Pattnaik, Puja Bajirao Sindhe
Regardless of the vicinity of E-business for the fulfillment of needs, individuals purchase numerous items from the markets and different shopping centers. According to our review, hard cash and normal time spent on every client is high, particularly in packaged grocery stores. The business people are ready to accept any machines which technologize the billing process to abate both labor cost and time spent. The main aim of the smart shopping trolley system is to fulfill the needs of the client as well as reduce the time spent on the billing procedure instead of waiting in a line or queue for a couple of items. The proposed system helps individual customers to get the actual bill after any discount or deduction of their purchase. Customers have to log in to their account for billing and pay the bill using any digital payment method. This system is developed by considering security for avoiding robbery and this system is also user-friendly. It minimizes the time in purchasing and making free to the customer by standing in a long queue by ensuring the customer comfort and minimizing the headache of barcode scanning and eliminating waging of billers, thereby accomplishing both customer and shopkeeper demands.
{"title":"Smart Shopping Trolley Using Raspberry Pi","authors":"Dinika D. Pradhan, S. Mali, Ashwini Ubale, M. Sardeshmukh, Swapnalini Pattnaik, Puja Bajirao Sindhe","doi":"10.1109/APSIT52773.2021.9641206","DOIUrl":"https://doi.org/10.1109/APSIT52773.2021.9641206","url":null,"abstract":"Regardless of the vicinity of E-business for the fulfillment of needs, individuals purchase numerous items from the markets and different shopping centers. According to our review, hard cash and normal time spent on every client is high, particularly in packaged grocery stores. The business people are ready to accept any machines which technologize the billing process to abate both labor cost and time spent. The main aim of the smart shopping trolley system is to fulfill the needs of the client as well as reduce the time spent on the billing procedure instead of waiting in a line or queue for a couple of items. The proposed system helps individual customers to get the actual bill after any discount or deduction of their purchase. Customers have to log in to their account for billing and pay the bill using any digital payment method. This system is developed by considering security for avoiding robbery and this system is also user-friendly. It minimizes the time in purchasing and making free to the customer by standing in a long queue by ensuring the customer comfort and minimizing the headache of barcode scanning and eliminating waging of billers, thereby accomplishing both customer and shopkeeper demands.","PeriodicalId":436488,"journal":{"name":"2021 International Conference in Advances in Power, Signal, and Information Technology (APSIT)","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131900429","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-10-08DOI: 10.1109/APSIT52773.2021.9641410
Tejna Khosla, O. Verma
Particle Swarm Optimization (PSO) is a well-known nature-inspired algorithm that is inspired by the social behavior of bird flocking and fish schooling. It has proved efficient in solving real-time problems due to its simplicity and good exploitation ability. However, due to poor exploration of search space, PSO gets trapped in local optima and gives less accurate results. On the other hand, Butterfly Optimization Algorithm (BOA) is good in exploration but converges slowly. This paper proposes a novel hybrid based on PSO and BOA, namely PSOBOA with few improvements based on the advantage and uniqueness of these algorithms. Firstly, a parameter-free penalty function is used to handle constraint violations so that the search process does not slacken when handling the constraints. Secondly, a self-adaptive approach has been adopted in PSO as well as BOA to ensure a smooth transition from exploration to exploitation, and no user interference. Thirdly, to improve the convergence rate and avoid local optima stagnation, a conditional approach has been used in the local and global search of BOA. The proposed algorithm PSOBOA overcomes the shortcomings of PSO and BOA and maximizes the performance. It is applied to solve structural optimization problems, such as pressure vessel design and welded-beam design problem, where the objectives, decision variables, and constraints are different. The experimental results and the convergence curves demonstrate better optimization performance of PSOBOA compared with quite a few state-of-the-art algorithms.
{"title":"An Adaptive Hybrid Particle Swarm Optimizer for Constrained Optimization Problem","authors":"Tejna Khosla, O. Verma","doi":"10.1109/APSIT52773.2021.9641410","DOIUrl":"https://doi.org/10.1109/APSIT52773.2021.9641410","url":null,"abstract":"Particle Swarm Optimization (PSO) is a well-known nature-inspired algorithm that is inspired by the social behavior of bird flocking and fish schooling. It has proved efficient in solving real-time problems due to its simplicity and good exploitation ability. However, due to poor exploration of search space, PSO gets trapped in local optima and gives less accurate results. On the other hand, Butterfly Optimization Algorithm (BOA) is good in exploration but converges slowly. This paper proposes a novel hybrid based on PSO and BOA, namely PSOBOA with few improvements based on the advantage and uniqueness of these algorithms. Firstly, a parameter-free penalty function is used to handle constraint violations so that the search process does not slacken when handling the constraints. Secondly, a self-adaptive approach has been adopted in PSO as well as BOA to ensure a smooth transition from exploration to exploitation, and no user interference. Thirdly, to improve the convergence rate and avoid local optima stagnation, a conditional approach has been used in the local and global search of BOA. The proposed algorithm PSOBOA overcomes the shortcomings of PSO and BOA and maximizes the performance. It is applied to solve structural optimization problems, such as pressure vessel design and welded-beam design problem, where the objectives, decision variables, and constraints are different. The experimental results and the convergence curves demonstrate better optimization performance of PSOBOA compared with quite a few state-of-the-art algorithms.","PeriodicalId":436488,"journal":{"name":"2021 International Conference in Advances in Power, Signal, and Information Technology (APSIT)","volume":"109 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132072997","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-10-08DOI: 10.1109/APSIT52773.2021.9641314
Sniedha Sarangi, P. K. Dash, Badri Narayan Sahoo, R. Bisoi
This work provides a wind speed prediction technique which is the combination of kernel functions and the random vector functional link neural network (RVFLN). The nonlinear kernel functions used in RVFLN called as MKRVFLN replace the traditional trial and error method to decide the number of neurons in hidden layer and also their appropriate activation functions. The MATLAB results demonstrates a comparison between ELM, RVFLN and MKRVFLN model. From comparison, the MKRVFLN forecasting model shows greater prediction accuracy. For wind seed prediction, the samples are collected at 10 minute, 30 minute, 1 hour and 3hour intervals of time from the wind farm named Sotavento locate in Spain.
{"title":"Multi-kernel based Random Vector Functional Link Neural Network for Short-term Prediction of Wind Speed","authors":"Sniedha Sarangi, P. K. Dash, Badri Narayan Sahoo, R. Bisoi","doi":"10.1109/APSIT52773.2021.9641314","DOIUrl":"https://doi.org/10.1109/APSIT52773.2021.9641314","url":null,"abstract":"This work provides a wind speed prediction technique which is the combination of kernel functions and the random vector functional link neural network (RVFLN). The nonlinear kernel functions used in RVFLN called as MKRVFLN replace the traditional trial and error method to decide the number of neurons in hidden layer and also their appropriate activation functions. The MATLAB results demonstrates a comparison between ELM, RVFLN and MKRVFLN model. From comparison, the MKRVFLN forecasting model shows greater prediction accuracy. For wind seed prediction, the samples are collected at 10 minute, 30 minute, 1 hour and 3hour intervals of time from the wind farm named Sotavento locate in Spain.","PeriodicalId":436488,"journal":{"name":"2021 International Conference in Advances in Power, Signal, and Information Technology (APSIT)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130471153","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-10-08DOI: 10.1109/APSIT52773.2021.9641249
J. Jena, Tara Prasanna Dash, S. Das, E. Mohapatra, C. K. Maiti
Short channel effect becomes a serious concern below 22nm technology node. This can be overcome by multigate devices such as double gate (DG), trigate (TG). Trigate FinFET structures have shown great potential for both digital and analog applications. In this work, we have simulated a realistic PMOS bulk-Si FinFET with epi-SiGe as a source/drain (S/D) stressor at a 7nm technology node. The strain enhancement mechanisms have been used in the diamond-shaped bridges patterned on SiGe S/D stressor. The stress in the channel due to epitaxial S/D stressor has been calculated using the stress history model and the theory of elasticity. A 30% improvement of the ‘on current’ in the channel as compared to the device without stress is demonstrated.
{"title":"Stress Enhanced Performance Analysis for Trigate FinFETs at 7nm Node","authors":"J. Jena, Tara Prasanna Dash, S. Das, E. Mohapatra, C. K. Maiti","doi":"10.1109/APSIT52773.2021.9641249","DOIUrl":"https://doi.org/10.1109/APSIT52773.2021.9641249","url":null,"abstract":"Short channel effect becomes a serious concern below 22nm technology node. This can be overcome by multigate devices such as double gate (DG), trigate (TG). Trigate FinFET structures have shown great potential for both digital and analog applications. In this work, we have simulated a realistic PMOS bulk-Si FinFET with epi-SiGe as a source/drain (S/D) stressor at a 7nm technology node. The strain enhancement mechanisms have been used in the diamond-shaped bridges patterned on SiGe S/D stressor. The stress in the channel due to epitaxial S/D stressor has been calculated using the stress history model and the theory of elasticity. A 30% improvement of the ‘on current’ in the channel as compared to the device without stress is demonstrated.","PeriodicalId":436488,"journal":{"name":"2021 International Conference in Advances in Power, Signal, and Information Technology (APSIT)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131031405","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-10-08DOI: 10.1109/APSIT52773.2021.9641211
J. Raiguru, P. Mahanandia, P. Raiguru, B. Subudhi
Perovskite materials are inspiring for solar cells (PSC) with higher efficiency and low-cost. But the use of cheap, non-toxic semiconductors as hole transporting material (HTM) has been a major and consistent issue. The p-type semiconductor CZTS (Cu2ZnSnS4) with optical bandgap energy (1.5 eV) has been emerged as a cost effective HTM. Furthermore, the optoelectronics features of CZTS (HTM) can be tuned by incorporating multiwall carbon nanotube (MMCNT) in CZTS. This fact encouraged us to prepare hybrid HTM CZTS-MWCNT composite by mixing CZTS and MWCNT and investigate their structural and optical characteristics. X-ray diffraction (XRD), and Raman spectroscopy characterizations have been performed to investigate the phase of the prepared parent materials and composites. Morphological analysis of the materials has been characterized by scanning electron microscopy (SEM), and transmission electron microscope (TEM). Absorption spectra and optical bandgap energy of the CZTS-MWCNT composites have been characterized by UV-Vis spectroscopy. The current-voltage characteristics of the hybrid composites material have been measured under dark and illumination conditions by using 1.5G Solar simulator and 2400 Keithley source measurement unit.
{"title":"Structural and Optical Properties Investigation of The Hybrid CZTS-MWCNT Composite Hole Transporting Material","authors":"J. Raiguru, P. Mahanandia, P. Raiguru, B. Subudhi","doi":"10.1109/APSIT52773.2021.9641211","DOIUrl":"https://doi.org/10.1109/APSIT52773.2021.9641211","url":null,"abstract":"Perovskite materials are inspiring for solar cells (PSC) with higher efficiency and low-cost. But the use of cheap, non-toxic semiconductors as hole transporting material (HTM) has been a major and consistent issue. The p-type semiconductor CZTS (Cu2ZnSnS4) with optical bandgap energy (1.5 eV) has been emerged as a cost effective HTM. Furthermore, the optoelectronics features of CZTS (HTM) can be tuned by incorporating multiwall carbon nanotube (MMCNT) in CZTS. This fact encouraged us to prepare hybrid HTM CZTS-MWCNT composite by mixing CZTS and MWCNT and investigate their structural and optical characteristics. X-ray diffraction (XRD), and Raman spectroscopy characterizations have been performed to investigate the phase of the prepared parent materials and composites. Morphological analysis of the materials has been characterized by scanning electron microscopy (SEM), and transmission electron microscope (TEM). Absorption spectra and optical bandgap energy of the CZTS-MWCNT composites have been characterized by UV-Vis spectroscopy. The current-voltage characteristics of the hybrid composites material have been measured under dark and illumination conditions by using 1.5G Solar simulator and 2400 Keithley source measurement unit.","PeriodicalId":436488,"journal":{"name":"2021 International Conference in Advances in Power, Signal, and Information Technology (APSIT)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132791521","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-10-08DOI: 10.1109/APSIT52773.2021.9641166
F. Ali, J. J. Mahakud, S. Kamilla
In this work, a new crystal growth technique has been used i.e. Thermo Vertical Direction Solidification (TVDS), designed and developed in our laboratory to grow undoped GaSb ingot from high purity Ga and Sb host materials. The grown ingot was then put inside thermal evaporation unit to deposit GaSb film on quartz substrate. The structural study of the grown GaSb thin film from the XRD characterization revealed that grown film was polycrystalline in nature. The electrical properties like carrier concentration, Hall-coefficient, mobility, resistivity etc of the film were studied by performing Hall-Effect measurements by Van Der Pauw method. It was found that for eutectic GaSb compound, thermal-evaporation is very much suitable method to deposit GaSb thin film with less complexity. Therefore, two terminal devices can be fabricated from the GaSb films by adding coplanner electrodes to design and investigate optical devices like photo detectors, optical communication devices, infrared diodes etc.
{"title":"Thermally Evaporated GaSb Thin Film Grown From TVDS Method for Optical Applications","authors":"F. Ali, J. J. Mahakud, S. Kamilla","doi":"10.1109/APSIT52773.2021.9641166","DOIUrl":"https://doi.org/10.1109/APSIT52773.2021.9641166","url":null,"abstract":"In this work, a new crystal growth technique has been used i.e. Thermo Vertical Direction Solidification (TVDS), designed and developed in our laboratory to grow undoped GaSb ingot from high purity Ga and Sb host materials. The grown ingot was then put inside thermal evaporation unit to deposit GaSb film on quartz substrate. The structural study of the grown GaSb thin film from the XRD characterization revealed that grown film was polycrystalline in nature. The electrical properties like carrier concentration, Hall-coefficient, mobility, resistivity etc of the film were studied by performing Hall-Effect measurements by Van Der Pauw method. It was found that for eutectic GaSb compound, thermal-evaporation is very much suitable method to deposit GaSb thin film with less complexity. Therefore, two terminal devices can be fabricated from the GaSb films by adding coplanner electrodes to design and investigate optical devices like photo detectors, optical communication devices, infrared diodes etc.","PeriodicalId":436488,"journal":{"name":"2021 International Conference in Advances in Power, Signal, and Information Technology (APSIT)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132927807","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-10-08DOI: 10.1109/apsit52773.2021.9641100
{"title":"[Copyright notice]","authors":"","doi":"10.1109/apsit52773.2021.9641100","DOIUrl":"https://doi.org/10.1109/apsit52773.2021.9641100","url":null,"abstract":"","PeriodicalId":436488,"journal":{"name":"2021 International Conference in Advances in Power, Signal, and Information Technology (APSIT)","volume":"88 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116205997","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-10-08DOI: 10.1109/APSIT52773.2021.9641486
S. K. Sarangi, Arunesh Paul, Harshit Kishor, Kritath Pandey
Attendance in an educational institution for students is the most challenging part of the virtual platform. It wastes a lot of effort and time when it is done manually. There was also a lot of fake attendance due to lack of a good attendance system. The face is the most important thing which identifies a human. Therefore, in this paper, we work on an attendance system using a face detection algorithm in real-time using the frontal face recognition concept. In this paper, we describe an efficient algorithm of haar cascade using an open-source image processing framework known as OpenCV.
{"title":"Automatic Attendance System using Face Recognition","authors":"S. K. Sarangi, Arunesh Paul, Harshit Kishor, Kritath Pandey","doi":"10.1109/APSIT52773.2021.9641486","DOIUrl":"https://doi.org/10.1109/APSIT52773.2021.9641486","url":null,"abstract":"Attendance in an educational institution for students is the most challenging part of the virtual platform. It wastes a lot of effort and time when it is done manually. There was also a lot of fake attendance due to lack of a good attendance system. The face is the most important thing which identifies a human. Therefore, in this paper, we work on an attendance system using a face detection algorithm in real-time using the frontal face recognition concept. In this paper, we describe an efficient algorithm of haar cascade using an open-source image processing framework known as OpenCV.","PeriodicalId":436488,"journal":{"name":"2021 International Conference in Advances in Power, Signal, and Information Technology (APSIT)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116554021","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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