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Physical Chemistry of Semiconductor Materials and Interfaces XVII最新文献

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Front Matter: Volume 10724 前题:10724卷
Pub Date : 2018-10-15 DOI: 10.1117/12.2515894
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引用次数: 0
Manipulating energy and spin in molecular semiconductors (Conference Presentation) 操纵分子半导体中的能量和自旋(会议报告)
Pub Date : 2018-09-17 DOI: 10.1117/12.2322033
S. Roberts
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引用次数: 0
Ultra-smooth perovskite thin films for lasers (Conference Presentation) 激光用超光滑钙钛矿薄膜(会议报告)
Pub Date : 2018-09-17 DOI: 10.1117/12.2319364
T. Riedl, N. Pourdavoud, A. Mayer, T. Haeger, R. Heiderhoff, Ivan Shutsko, H. Scheer, P. Görrn
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引用次数: 1
Carrier dynamics in optically excited Fermi degenerate states in atomically thin TMDC semiconductors (Conference Presentation) 原子薄TMDC半导体中光激发费米简并态的载流子动力学(会议报告)
Pub Date : 2018-09-17 DOI: 10.1117/12.2321206
K. Gundogdu
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引用次数: 0
Charge separation and collection in organic solar cells (Conference Presentation) 有机太阳能电池的电荷分离与收集(会议报告)
Pub Date : 2018-09-17 DOI: 10.1117/12.2319967
J. Durrant
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引用次数: 0
Understanding the photophysics of efficient non-fullerene acceptors (Conference Presentation) 了解高效非富勒烯受体的光物理(会议报告)
Pub Date : 2018-09-17 DOI: 10.1117/12.2321235
Nathaniel P. Gallop, Xijia Zheng, Flurin D. Eisner, Mohammed Azzouzi, Zhuping Fei, M. Heeney, J. Nelson, A. Bakulin
One of the key areas of study in organic photovoltaics is the development of so-called 'non-fullerene acceptors' (NFAs), which enjoy several benefits over older, fullerene-based acceptors, such as low cost, high absorptivity, and tuneability. A recent report Fei et. al. demonstrated conversion efficiencies of 13% in donor-acceptor blends comprising a fluorinated derivative of the common donor PBDB-T and an alkylated derivative of the ITIC (C8-ITIC) acceptor species. Understanding the underlying dynamics of this material is therefore important for the rational design of new NFAs.In order to understand the photophysical processes in C8-ITIC, we performed ultrafast transient absorption studies of four donor-acceptor blends, containing various combinations of C8-ITIC, PFBDB-T, and their unmodified predecessors. Long-lived excitons form at the acceptor regardless of the excitation frequency, suggestive of rapid energy transfer from the donor to the acceptor. Exciton decay at early times was more rapid in C8-ITIC compared to non-alkylated ITIC. A distinct change in exciton decay characteristics was observed at longer timescales in tandem with spectral drift in the acceptor’s excitonic peak. We use global analysis and a broader array of ultrafast spectroscopic techniques to elucidate the identity and mechanism behind this feature. Our results will help to shed light on the efficiency of this material and aid the development of more efficient and effective non-fullerene acceptors.
有机光伏研究的关键领域之一是所谓的“非富勒烯受体”(nfa)的发展,它比旧的富勒烯受体具有几个优点,如低成本、高吸收率和可调性。Fei等人最近的一份报告表明,在由普通供体PBDB-T的氟化衍生物和ITIC (C8-ITIC)受体物种的烷基化衍生物组成的供体-受体混合物中,转化效率为13%。因此,了解这种材料的潜在动力学对于合理设计新的nfa非常重要。为了了解C8-ITIC的光物理过程,我们进行了四种供体-受体共混物的超快瞬态吸收研究,这些共混物含有C8-ITIC, PFBDB-T及其未修饰的前身的不同组合。无论激发频率如何,长寿命激子都在受体处形成,这表明能量从供体迅速转移到受体。与未烷基化的ITIC相比,C8-ITIC的早期激子衰变更快。在较长的时间尺度上,随着受体激子峰的光谱漂移,激子衰减特性发生了明显的变化。我们使用全局分析和更广泛的超快光谱技术阵列来阐明这一特征背后的身份和机制。我们的结果将有助于揭示这种材料的效率,并有助于开发更高效和有效的非富勒烯受体。
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引用次数: 0
Mechanism of ligand-controlled emission in silicon quantum dots (Conference Presentation) 配体控制的硅量子点发射机制(会议报告)
Pub Date : 2018-09-17 DOI: 10.1117/12.2321662
L. Peteanu, W. So, Qi Li, Rongchao Jin
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引用次数: 0
P3HT thin film single-molecule and aggregate fluorescence microscopy studies (Conference Presentation) P3HT薄膜单分子和聚集体荧光显微镜研究(会议报告)
Pub Date : 2018-09-17 DOI: 10.1117/12.2320622
Stephanie N Kramer, L. Peteanu
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引用次数: 0
Carrier spin relaxation in 2D perovskite semiconductors (Conference Presentation) 二维钙钛矿半导体中的载流子自旋弛豫(会议报告)
Pub Date : 2018-09-17 DOI: 10.1117/12.2321066
K. Hall, Seth B. Todd, Drew B. Riley, A. Ramachandran, Charlotte Clegg, A. Binai-Motlagh, C. Stoumpos, S. March, I. Hill, M. Kanatzidis
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引用次数: 0
Ion migration in methylammonium lead halide perovskites (Conference Presentation) 甲基铵卤化铅钙钛矿中的离子迁移(会议报告)
Pub Date : 2018-09-17 DOI: 10.1117/12.2320259
B. Ehrler
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引用次数: 0
期刊
Physical Chemistry of Semiconductor Materials and Interfaces XVII
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