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Physical Chemistry of Semiconductor Materials and Interfaces XVII最新文献

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Charge-transfer states at 2D metal halide perovskite/organic heterojunctions (Conference Presentation) 二维金属卤化物钙钛矿/有机异质结的电荷转移态(会议报告)
Pub Date : 2018-09-17 DOI: 10.1117/12.2320314
Lianfeng Zhao, YunHui L. Lin, Barry P Rand
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引用次数: 1
Recombination and charge transfer states in organic photovoltaics: from small molecules to ultra-low band gap polymers (Conference Presentation) 有机光伏中的重组和电荷转移态:从小分子到超低带隙聚合物(会议报告)
Pub Date : 2018-09-17 DOI: 10.1117/12.2319926
Tracey M. Clarke, Kealan J. Fallon, Michelle S. Vezie, E. Salvadori, Jordan Shaikh, C. W. Kay, A. Bakulin, J. Nelson, Hugo Bronstein
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引用次数: 0
Electronic properties of electronic material interfaces: their fundamentals and manipulation (Conference Presentation) 电子材料界面的电子特性:它们的基础和操作(会议报告)
Pub Date : 2018-09-17 DOI: 10.1117/12.2321315
N. Koch
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引用次数: 0
Revealing the origins of open circuit voltage loss in perovskite solar cells by surface photovoltage measurement (Conference Presentation) 通过表面光电压测量揭示钙钛矿太阳能电池开路电压损失的根源(会议报告)
Pub Date : 2018-09-17 DOI: 10.1117/12.2320328
Ji‐Seon Kim
Continuous increase in the device performance of lead halide perovskite-based solar cells is strongly related to better understanding of the optoelectronic processes occurring in the perovskite layer and its interfaces. There are many of these processes that are critical to device performance, but are not yet fully understood, which include charge carrier accumulation and recombination, trapping of electrons and holes, and ionic movement. Here we report our recent results of methylammonium lead iodide (MAPI)-based photovoltaic devices identifying the origins of different open circuit voltages and their potential loss mechanisms in conventional and inverted device structures. We have investigated in detail the energetics and the illumination generated surface photovoltage (SPV) and its transient behaviour at the perovskite layer and its heterointerfaces with various charge extracting interlayers. A MAPI layer with different thicknesses was deposited on top of the various underlayers including ITO, n-type TiO2, p-type PEDOT:PSS and many oxides and organic semiconductors. We found that the work function of MAPI is strongly influenced by the underlayer showing generally p-type semiconductor character. The results of thickness dependent SPV measurements indicate that there is an increase in the hole concentration at both PEDOT:PSS/MAPI and TiO2/MAPI interfaces, which leads to an increased interfacial charge recombination. In this talk, I will discuss how these observations are related to different open circuit voltages and their loss in conventional and inverted devices. I will also discuss the temperature dependent transient SPV results, which is used to distinguish different processes governed by charge carrier generation, ion migration, and charge trapping – three processes taking place at three different timescales.
卤化铅钙钛矿基太阳能电池器件性能的持续提高与更好地理解钙钛矿层及其界面中发生的光电过程密切相关。这些过程中有许多对器件性能至关重要,但尚未完全理解,包括电荷载流子的积累和重组,电子和空穴的捕获以及离子运动。在此,我们报告了基于甲基碘化铅(MAPI)的光伏器件的最新研究结果,确定了不同开路电压的来源及其在传统和倒置器件结构中的潜在损耗机制。我们详细地研究了钙钛矿层及其异质界面上的能量学和表面光电压(SPV)及其瞬态行为。在ITO、n型TiO2、p型PEDOT:PSS以及多种氧化物和有机半导体等底层材料上沉积了不同厚度的MAPI层。我们发现MAPI的功函数受到底层的强烈影响,表现出普遍的p型半导体特性。厚度相关的SPV测量结果表明,PEDOT:PSS/MAPI和TiO2/MAPI界面上的空穴浓度增加,导致界面电荷复合增加。在这次演讲中,我将讨论这些观察结果如何与传统和反向器件中的不同开路电压及其损耗相关。我还将讨论温度相关的瞬态SPV结果,该结果用于区分由载流子产生、离子迁移和电荷捕获控制的不同过程,这三个过程发生在三个不同的时间尺度上。
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引用次数: 0
Charge losses in bulk-heterojunction organic solar cells on nanosecond timescale and the role of charge transfer states (Conference Presentation) 体积异质结有机太阳能电池在纳秒时间尺度上的电荷损失及电荷转移态的作用(会议报告)
Pub Date : 2018-09-17 DOI: 10.1117/12.2319932
S. Dimitrov, J. Durrant, I. McCulloch, B. Schroeder
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引用次数: 0
Efficient blue perovskite nanocrystal light emitting diodes (Conference Presentation) 高效蓝钙钛矿纳米晶发光二极管(会议报告)
Pub Date : 2018-09-17 DOI: 10.1117/12.2320324
Daniel N. Congreve, Mahesh K. Gangishetty, Shaocong Hou, Q. Quan
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引用次数: 0
A tale of two triplets: manipulating and harvesting triplet pairs with strong light-matter coupling (Conference Presentation) 两个三联体的故事:利用强光-物质耦合操纵和收获三联体对(会议报告)
Pub Date : 2018-09-17 DOI: 10.1117/12.2321172
Daniel W Polak, Harriet Coulthard, R. Jayaprakash, Kealan J. Fallon, A. Leventis, Hugo Bronstein, J. Anthony, David G Lidzey, Jenny Clark, A. Musser
The interaction of organic semiconductors with confined light fields offers one of the easiest means to tune their material properties. In the regime of strong light-matter coupling, the semiconductor exciton and cavity photon mode hybridize to form new 'polariton' states. In organic systems these light-matter hybrids are tuneably separated by as much as 100’s of meV from the parent exciton, enabling radical alteration of the energetic landscape. The effects of strong coupling can be profound, including reports of long-range energy transfer, enhanced carrier mobility and altered chemical reactivity. Theoretical work is now increasingly focused on the potential of polariton to manipulate electronic dynamics in the excited state, but experimental realisation has proved challenging. Here, we demonstrate the ability to manipulate triplet photophysics in singlet exciton fission materials in the strong coupling regime. Within microcavities, we dramatically enhance the emission lifetime and increase delayed fluorescence by >100%, which we explain through a shift in the thermodynamic equilibrium between dark states in the exciton reservoir and the bright polaritons. Indeed, with this approach we can create entirely new radiative pathways, turning completely dark states bright and opening new scope for microcavity-controlled materials.
有机半导体与受限光场的相互作用为调整其材料特性提供了最简单的方法之一。在强光-物质耦合状态下,半导体激子和腔光子模式杂化形成新的“极化”态。在有机系统中,这些光-物质杂合体与母激子的距离可达100兆电子伏(meV),从而使能量格局发生根本性的改变。强耦合的影响可能是深远的,包括远程能量转移、增强载流子迁移率和改变化学反应性的报道。理论工作现在越来越多地集中在极化子在激发态中操纵电子动力学的潜力上,但实验实现已被证明具有挑战性。在这里,我们展示了在强耦合状态下在单线态激子裂变材料中操纵三重态光物理的能力。在微腔内,我们显著提高了发射寿命,延迟荧光增加了>100%,这可以通过激子库中暗态和亮极化子之间的热力学平衡的转变来解释。事实上,通过这种方法,我们可以创造全新的辐射途径,使完全黑暗的状态变得明亮,并为微腔控制材料开辟了新的领域。
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引用次数: 1
QD-TSPP FRET systems for fluorescent sensing (Conference Presentation) 用于荧光传感的QD-TSPP FRET系统(会议报告)
Pub Date : 2018-09-17 DOI: 10.1117/12.2320815
Yuqian Liu, Qingjiang Sun
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引用次数: 0
期刊
Physical Chemistry of Semiconductor Materials and Interfaces XVII
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