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g-factor engineering with InAsSb alloys toward zero band gap limit 面向零带隙极限的InAsSb合金的g因子工程
IF 3.7 2区 物理与天体物理 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2023-09-06 DOI: 10.1103/PhysRevB.108.L121201
Yuxuan Jiang, M. Ermolaev, S. Moon, G. Kipshidze, G. Belenky, Stefan Svensson, M. Ozerov, Dmitry Smirnov, Zhigang Jiang, S. Suchalkin
Band gap is known as an effective parameter for tuning the Lande $g$-factor in semiconductors and can be manipulated in a wide range through the bowing effect in ternary alloys. In this work, using the recently developed virtual substrate technique, high-quality InAsSb alloys throughout the whole Sb composition range are fabricated and a large $g$-factor of $gapprox -90$ at the minimum band gap of $sim 0.1$ eV, which is almost twice that in bulk InSb is found. Further analysis to the zero gap limit reveals a possible gigantic $g$-factor of $gapprox -200$ with a peculiar relativistic Zeeman effect that disperses as the square root of magnetic field. Such a $g$-factor enhancement toward the narrow gap limit cannot be quantitatively described by the conventional Roth formula, as the orbital interaction effect between the nearly triply degenerated bands becomes the dominant source for the Zeeman splitting. These results may provide new insights into realizing large $g$-factors and spin polarized states in semiconductors and topological materials.
众所周知,带隙是调整半导体中Lande$g$-因子的有效参数,并且可以通过三元合金中的弯曲效应在大范围内进行控制。在这项工作中,使用最近开发的虚拟衬底技术,制备了整个Sb成分范围内的高质量InAsSb合金,并在最小带隙$sim 0.1$eV下发现了$g$-因子$gapprox-90$,这几乎是体InSb的两倍。对零间隙极限的进一步分析揭示了一个可能的巨大$g$因子$gapproxy-200$,具有一种特殊的相对论塞曼效应,该效应作为磁场的平方根分散。这种向窄间隙极限的$g$-因子增强不能用传统的Roth公式定量描述,因为几乎三重退化带之间的轨道相互作用效应成为塞曼分裂的主要来源。这些结果可能为在半导体和拓扑材料中实现大的$g$-因子和自旋极化态提供新的见解。
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引用次数: 1
Minimal residual entropy in (0+1)-dimensional non-Fermi liquids (0+1)维非费米液体的最小剩余熵
IF 3.7 2区 物理与天体物理 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2023-09-06 DOI: 10.1103/physrevb.108.115111
Alexey Milekhin
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引用次数: 0
Quantum correlations of a two-dimensional electron gas with Rashba spin-orbit coupling Rashba自旋轨道耦合二维电子气的量子关联
IF 3.7 2区 物理与天体物理 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2023-09-06 DOI: 10.1103/physrevb.108.115408
J. I. Aranzadi, P. I. Tamborenea
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引用次数: 0
Trapped photons: Transverse plasmons in layered semiconducting heterostructures 俘获光子:层状半导体异质结构中的横向等离子体
IF 3.7 2区 物理与天体物理 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2023-09-06 DOI: 10.1103/physrevb.108.l121402
Neven Golenić, V. Despoja
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引用次数: 0
Effects of electric field and interlayer coupling on Schottky barrier of germanene/MoSSe vertical heterojunction 电场和层间耦合对锗烯/MoSSe垂直异质结肖特基势垒的影响
IF 3.7 2区 物理与天体物理 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2023-09-05 DOI: 10.1103/physrevb.108.125404
Jun Yuan, Fanfan Wang, Zhufeng Zhang, Baoan Song, Shubin Yan, Ming-Hui Shang, Chaohui Tong, Jun Zhou
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引用次数: 1
High-precision measurement of the Ferrell-Glover-Tinkham sum rule in a cuprate high-temperature superconductor 铜酸盐高温超导体中Ferrell—Glover—Tinkham和规则的高精度测量
IF 3.7 2区 物理与天体物理 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2023-09-05 DOI: 10.1103/physrevb.108.104501
R. D. Dawson, X. Shi, K. S. Rabinovich, D. Putzky, Y.-L. Mathis, G. Christiani, G. Logvenov, B. Keimer, A. V. Boris
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引用次数: 0
Tunneling magnetoresistance in all-antiferromagnetic Mn2 Au-based tunnel junctions 全反铁磁性Mn2-Au基隧道结中的隧道磁阻
IF 3.7 2区 物理与天体物理 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2023-09-05 DOI: 10.1103/physrevb.108.104406
Xintao Jia, Hui-Min Tang, Shi Wang
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引用次数: 0
Feasibility of an analog of Andreev reflection in superfluid He4 超流体He4中Andreev反射模拟的可行性
IF 3.7 2区 物理与天体物理 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2023-09-05 DOI: 10.1103/physrevb.108.l100502
L. Skrbek, Y. A. Sergeev
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引用次数: 0
Valence transition and termination-dependent surface states in the topological Kondo semimetal YbPtBi 拓扑Kondo半金属YbPtBi中的价跃迁和终止相关表面态
IF 3.7 2区 物理与天体物理 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2023-09-05 DOI: 10.1103/physrevb.108.125110
Yuan Fang, Zhongzheng Wu, Guowei Yang, Yuwei Zhang, Weifan Zhu, Yi Wu, Chunyu Guo, Yuke Li, Huiqiu Yuan, Jianxin Zhu, Yang Liu, Chao Cao
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引用次数: 0
Role of hydrogen bonding in charge-ordered organic conductor α−(BEDT-TTF)2 氢键在电荷有序有机导体α−(BEDT-TTF)2<m中的作用
IF 3.7 2区 物理与天体物理 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2023-09-05 DOI: 10.1103/physrevb.108.115108
T. Kobayashi, Y. Kato, H. Taniguchi, T. Tsumuraya, K. Hiraki, S. Fujiyama
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引用次数: 0
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