Pub Date : 2024-10-14DOI: 10.1134/S1062873824707682
V. A. Ulitko, V. V. Konev, A. A. Chikov, Yu. D. Panov
The authors consider a model of charged semi-hard-core bosons on a square lattice with possible occupation number ({{n}_{i}} = 0,1,2~) at each site. Temperature phase diagrams of the model are obtained using quantum Monte Carlo calculations, and the effect of local charge correlations is studied. It is shown that local charge correlations increase the role of quantum fluctuations in the formation of phase states.
{"title":"Effect of Local Correlations on Phase States in a Model of Semi-Hard-Core Bosons on a Square Lattice","authors":"V. A. Ulitko, V. V. Konev, A. A. Chikov, Yu. D. Panov","doi":"10.1134/S1062873824707682","DOIUrl":"10.1134/S1062873824707682","url":null,"abstract":"<p>The authors consider a model of charged semi-hard-core bosons on a square lattice with possible occupation number <span>({{n}_{i}} = 0,1,2~)</span> at each site. Temperature phase diagrams of the model are obtained using quantum Monte Carlo calculations, and the effect of local charge correlations is studied. It is shown that local charge correlations increase the role of quantum fluctuations in the formation of phase states.</p>","PeriodicalId":504,"journal":{"name":"Bulletin of the Russian Academy of Sciences: Physics","volume":"88 9","pages":"1452 - 1458"},"PeriodicalIF":0.48,"publicationDate":"2024-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142434872","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-14DOI: 10.1134/S106287382470775X
A. A. Trofimov, I. A. Denisov, M. B. Grishechkin, D. O. Tsaregorodtcev, A. E. Goncharov, K. A. Gladysheva, V. A. Malygin, A. M. Kosyakova
The structural perfection of a HgCdTe epitaxial layer with a minimum number of extended structural defects is ensured by the molecular beam epitaxy method and by the growth on substrates matched to the crystal lattice parameter. CdZnTe (211)B substrates (Orion Association, Moscow, Russia) have a total thickness variation (TTV) of less than 1.5 μm and a surface roughness of Ra = 0.45 nm (rms = 0.58 nm).
{"title":"Chemical-Mechanical Polishing of CdZnTe Substrates to Achieve the Surface Morphology for the Synthesis of A2B6 Solid Solutions by Molecular Beam Epitaxy","authors":"A. A. Trofimov, I. A. Denisov, M. B. Grishechkin, D. O. Tsaregorodtcev, A. E. Goncharov, K. A. Gladysheva, V. A. Malygin, A. M. Kosyakova","doi":"10.1134/S106287382470775X","DOIUrl":"10.1134/S106287382470775X","url":null,"abstract":"<p>The structural perfection of a HgCdTe epitaxial layer with a minimum number of extended structural defects is ensured by the molecular beam epitaxy method and by the growth on substrates matched to the crystal lattice parameter. CdZnTe (211)B substrates (Orion Association, Moscow, Russia) have a total thickness variation (TTV) of less than 1.5 μm and a surface roughness of <i>R</i><sub><i>a</i></sub> = 0.45 nm (rms = 0.58 nm).</p>","PeriodicalId":504,"journal":{"name":"Bulletin of the Russian Academy of Sciences: Physics","volume":"88 9","pages":"1496 - 1500"},"PeriodicalIF":0.48,"publicationDate":"2024-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142434807","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-14DOI: 10.1134/S1062873824707621
M. A. Parshakova, E. V. Lipnyagov
A series of experimental investigations was carried out to study the kinetics of spontaneous heterogeneous boiling-up of superheated n-pentane in two glass tubes. It was determined that the isobaric temperature dependences of the mean lifetime of the superheated liquid that were measured under similar conditions have threshold values in the temperature ranges of 100–115, 120–125, and 130–140°C.
{"title":"Multi-Threshold Nature of Spontaneous Heterogeneous Boiling-Up of a Superheated Liquid in a Glass Tube","authors":"M. A. Parshakova, E. V. Lipnyagov","doi":"10.1134/S1062873824707621","DOIUrl":"10.1134/S1062873824707621","url":null,"abstract":"<p>A series of experimental investigations was carried out to study the kinetics of spontaneous heterogeneous boiling-up of superheated <i>n</i>-pentane in two glass tubes. It was determined that the isobaric temperature dependences of the mean lifetime of the superheated liquid that were measured under similar conditions have threshold values in the temperature ranges of 100–115, 120–125, and 130–140°C.</p>","PeriodicalId":504,"journal":{"name":"Bulletin of the Russian Academy of Sciences: Physics","volume":"88 9","pages":"1408 - 1414"},"PeriodicalIF":0.48,"publicationDate":"2024-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142434863","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-14DOI: 10.1134/S1062873824707694
F. A. Vasilevskiy, P. A. Igoshev, V. Yu. Irkhin
The itinerant metamagnetic phase transition in metals within the Hubbard model for a face-centered cubic lattice was studied. The ratio of the transfer integrals between the nearest and next-to-nearest neighbors was chosen to provide a strong van Hove singularity in the density of electronic states. The magnetic field dependencies of magnetization in the transition region were obtained, and the effect of model parameters on the phenomenon under consideration was investigated.
{"title":"Metamagnetism of Itinerant Electrons in the Hubbard Model for the FCC Lattice, Caused by the Van Hove Singularity","authors":"F. A. Vasilevskiy, P. A. Igoshev, V. Yu. Irkhin","doi":"10.1134/S1062873824707694","DOIUrl":"10.1134/S1062873824707694","url":null,"abstract":"<p>The itinerant metamagnetic phase transition in metals within the Hubbard model for a face-centered cubic lattice was studied. The ratio of the transfer integrals between the nearest and next-to-nearest neighbors was chosen to provide a strong van Hove singularity in the density of electronic states. The magnetic field dependencies of magnetization in the transition region were obtained, and the effect of model parameters on the phenomenon under consideration was investigated.</p>","PeriodicalId":504,"journal":{"name":"Bulletin of the Russian Academy of Sciences: Physics","volume":"88 9","pages":"1459 - 1464"},"PeriodicalIF":0.48,"publicationDate":"2024-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142434875","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-14DOI: 10.1134/S1062873824707657
N. A. Kruglikov, A. G. Bystrushkin, I. V. Kochev, S. D. Protsiv, D. A. Krylova
Treatment with hydrostatic pressure of 10 MPa for 5 min stimulates the accelerated germination of lettuce seeds. Treatment with liquid oxygen has a depressing effect on seeds. In contrast, treatment of the same duration in liquid argon stimulates seed germination. The delay between seed treatment and germination has a negative impact on their sowing quality. Raising the temperature of seed storage enhances this effect.
{"title":"Effect of Preliminarily Treating Lettuce Seeds with Hydrostatic Pressure and Cryofluids on the Germination and Subsequent Development of Plants","authors":"N. A. Kruglikov, A. G. Bystrushkin, I. V. Kochev, S. D. Protsiv, D. A. Krylova","doi":"10.1134/S1062873824707657","DOIUrl":"10.1134/S1062873824707657","url":null,"abstract":"<p>Treatment with hydrostatic pressure of 10 MPa for 5 min stimulates the accelerated germination of lettuce seeds. Treatment with liquid oxygen has a depressing effect on seeds. In contrast, treatment of the same duration in liquid argon stimulates seed germination. The delay between seed treatment and germination has a negative impact on their sowing quality. Raising the temperature of seed storage enhances this effect.</p>","PeriodicalId":504,"journal":{"name":"Bulletin of the Russian Academy of Sciences: Physics","volume":"88 9","pages":"1431 - 1439"},"PeriodicalIF":0.48,"publicationDate":"2024-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142434869","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-14DOI: 10.1134/S1062873824707761
O. S. Trushin, I. S. Fattakhov, A. A. Popov, L. A. Mazaletsky, R. A. Gaidukasov, A. V. Myakonkikh
Chiral thin film structures based on arrays of cobalt nanohelices obtained by oblique angle deposition were experimentally studied. It was shown that, in the conditions of electron-beam evaporation on rotating inclined substrate, arrays of nanohelices wound in the same direction are formed. By varying substrate rotation speed, it is possible to change geometrical sizes of those helixes (helix pitch, helix radius). The thus obtained chiral metasurface demonstrates pronounced asymmetry of optical characteristics at the reflection of right and left circular polarized light.
{"title":"Chiral Thin Film Structures Based on Arrays of Cobalt Nanohelices Obtained By Oblique Deposition","authors":"O. S. Trushin, I. S. Fattakhov, A. A. Popov, L. A. Mazaletsky, R. A. Gaidukasov, A. V. Myakonkikh","doi":"10.1134/S1062873824707761","DOIUrl":"10.1134/S1062873824707761","url":null,"abstract":"<p>Chiral thin film structures based on arrays of cobalt nanohelices obtained by oblique angle deposition were experimentally studied. It was shown that, in the conditions of electron-beam evaporation on rotating inclined substrate, arrays of nanohelices wound in the same direction are formed. By varying substrate rotation speed, it is possible to change geometrical sizes of those helixes (helix pitch, helix radius). The thus obtained chiral metasurface demonstrates pronounced asymmetry of optical characteristics at the reflection of right and left circular polarized light.</p>","PeriodicalId":504,"journal":{"name":"Bulletin of the Russian Academy of Sciences: Physics","volume":"88 9","pages":"1501 - 1504"},"PeriodicalIF":0.48,"publicationDate":"2024-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142434806","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-14DOI: 10.1134/S1062873824707566
M. G. Urazaliev, M. E. Stupak, B. B. Popov
The self-diffusion coefficients for symmetrical tilt grain boundaries and for grain boundaries of the general type in nickel were calculated by atomistic simulation methods. The special tilt grain boundaries were simulated using a bicrystal model; and general-type grain boundaries, in a nanocrystal model. The self-diffusion coefficient was represented as a temperature dependence. The activation energies of self-diffusion were determined.
{"title":"Atomistic Simulation of Self-Diffusion in Nickel Grain Boundaries","authors":"M. G. Urazaliev, M. E. Stupak, B. B. Popov","doi":"10.1134/S1062873824707566","DOIUrl":"10.1134/S1062873824707566","url":null,"abstract":"<p>The self-diffusion coefficients for symmetrical tilt grain boundaries and for grain boundaries of the general type in nickel were calculated by atomistic simulation methods. The special tilt grain boundaries were simulated using a bicrystal model; and general-type grain boundaries, in a nanocrystal model. The self-diffusion coefficient was represented as a temperature dependence. The activation energies of self-diffusion were determined.</p>","PeriodicalId":504,"journal":{"name":"Bulletin of the Russian Academy of Sciences: Physics","volume":"88 9","pages":"1368 - 1375"},"PeriodicalIF":0.48,"publicationDate":"2024-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142434860","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-14DOI: 10.1134/S1062873824707773
A. S. Jaroshevich, V. A. Tkachenko, Z. D. Kvon, N. S. Kuzmin, O. A. Tkachenko, D. G. Baksheev, I. V. Marchishin, A. K. Bakarov, E. E. Rodyakina, V. A. Antonov, V. P. Popov, A. V. Latyshev
Quantum point contacts with a short (100-nm) channel in a high-mobility two-dimensional electron gas of GaAs/Al(Ga)As heterostructures and a short-channel p-type field-effect transistor in a silicon-on-insulator structure were fabricated and studied experimentally and by modeling at the Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia, in order to study the response of the samples to weak irradiation by an electromagnetic field with a frequency of ~2 GHz. This response in the tunneling mode at a temperature of 4.2 K turned out to be giant and was observed against the background of features caused by impurity disorder.
俄罗斯新西伯利亚俄罗斯科学院西伯利亚分院 Rzhanov 半导体物理研究所制作了在 GaAs/Al(Ga)As 异质结构的高迁移率二维电子气中具有短(100 纳米)沟道的量子点接触以及硅绝缘体结构中的短沟道 p 型场效应晶体管,并对其进行了实验和建模研究,以研究样品对频率约为 2 千兆赫的电磁场微弱辐照的响应。在 4.2 K 的温度下,这种隧道模式的响应是巨大的,是在杂质无序造成的特征背景下观察到的。
{"title":"Features of Microwave Photoconductance of Quantum Point Contact and Silicon Field-Effect Transistor","authors":"A. S. Jaroshevich, V. A. Tkachenko, Z. D. Kvon, N. S. Kuzmin, O. A. Tkachenko, D. G. Baksheev, I. V. Marchishin, A. K. Bakarov, E. E. Rodyakina, V. A. Antonov, V. P. Popov, A. V. Latyshev","doi":"10.1134/S1062873824707773","DOIUrl":"10.1134/S1062873824707773","url":null,"abstract":"<p>Quantum point contacts with a short (100-nm) channel in a high-mobility two-dimensional electron gas of GaAs/Al(Ga)As heterostructures and a short-channel <i>p</i>-type field-effect transistor in a silicon-on-insulator structure were fabricated and studied experimentally and by modeling at the Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia, in order to study the response of the samples to weak irradiation by an electromagnetic field with a frequency of ~2 GHz. This response in the tunneling mode at a temperature of 4.2 K turned out to be giant and was observed against the background of features caused by impurity disorder.</p>","PeriodicalId":504,"journal":{"name":"Bulletin of the Russian Academy of Sciences: Physics","volume":"88 9","pages":"1505 - 1512"},"PeriodicalIF":0.48,"publicationDate":"2024-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142434808","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-14DOI: 10.1134/S1062873824707724
V. V. Preobrazhenskii, I. B. Chistokhin, I. I. Ryabtsev, V. A. Haisler, A. I. Toropov
A brief overview is presented of results obtained at the Rzhanov Institute of Semiconductor Physics in the development of photon detectors and emitters promising for use in quantum cryptography systems, along with miniature quantum frequency standards based on the effect of coherent population trapping.
本文简要介绍了热诺夫半导体物理研究所(Rzhanov Institute of Semiconductor Physics)在开发有望用于量子密码系统的光子探测器和发射器方面取得的成果,以及基于相干群体捕获效应的微型量子频率标准。
{"title":"Photon Detectors and Emitters for Quantum Communication Systems and Quantum Frequency Standards","authors":"V. V. Preobrazhenskii, I. B. Chistokhin, I. I. Ryabtsev, V. A. Haisler, A. I. Toropov","doi":"10.1134/S1062873824707724","DOIUrl":"10.1134/S1062873824707724","url":null,"abstract":"<p>A brief overview is presented of results obtained at the Rzhanov Institute of Semiconductor Physics in the development of photon detectors and emitters promising for use in quantum cryptography systems, along with miniature quantum frequency standards based on the effect of coherent population trapping.</p>","PeriodicalId":504,"journal":{"name":"Bulletin of the Russian Academy of Sciences: Physics","volume":"88 9","pages":"1478 - 1484"},"PeriodicalIF":0.48,"publicationDate":"2024-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142434804","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-28DOI: 10.1134/S1062873824707293
Yu. B. Gurov, S. A. Evseev, S. V. Rozov, V. G. Sandukovsky, B. A. Chernyshev
Spectra of deuterons and tritons are measured upon the absorption of stopped π− mesons on a live target (an analog of a 28Si target). It is shown this technique allows the identification of direct pathways for the formation of deuterons and tritons. The share of these particles in the total yields is ~30%.
{"title":"Formation of Complex Particles during the Absorption of π− Mesons in a Live Silicon Target","authors":"Yu. B. Gurov, S. A. Evseev, S. V. Rozov, V. G. Sandukovsky, B. A. Chernyshev","doi":"10.1134/S1062873824707293","DOIUrl":"10.1134/S1062873824707293","url":null,"abstract":"<p>Spectra of deuterons and tritons are measured upon the absorption of stopped π<sup>−</sup> mesons on a live target (an analog of a <sup>28</sup>Si target). It is shown this technique allows the identification of direct pathways for the formation of deuterons and tritons. The share of these particles in the total yields is ~30%.</p>","PeriodicalId":504,"journal":{"name":"Bulletin of the Russian Academy of Sciences: Physics","volume":"88 8","pages":"1198 - 1201"},"PeriodicalIF":0.48,"publicationDate":"2024-08-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142186446","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}