Pub Date : 2023-04-01DOI: 10.24425/opelre.2020.132502
K. Piwowarski
Article history: Received 18 Feb. 2020 Received in revised form 23 Mar. 2020 Accepted 24 mar 2020 Currently, work is underway to manufacture and find potential applications for a photoconductive semiconductor switch made of a semi-insulating material. The article analyzes the literature in terms of parameters and possibilities of using PCSS switches, as well as currently used switches in power and pulse power electronic system. The results of laboratory tests for the prototype model of the GaP-based switch were presented and compared with the PCSS switch parameters from the literature. The operating principle, parameters and application of IGBT transistor, thyristor, opto-thyristor, spark gap and power switch were presented and discussed. An analysis of the possibilities of replacing selected elements by the PCSS switch was carried out, taking into account the pros and cons of the compared devices. The possibility of using the currently made PCSS switch from gallium phosphide was also discussed.
{"title":"Comparison of photoconductive semiconductor switch parameters with selected switch devices in power systems","authors":"K. Piwowarski","doi":"10.24425/opelre.2020.132502","DOIUrl":"https://doi.org/10.24425/opelre.2020.132502","url":null,"abstract":"Article history: Received 18 Feb. 2020 Received in revised form 23 Mar. 2020 Accepted 24 mar 2020 Currently, work is underway to manufacture and find potential applications for a photoconductive semiconductor switch made of a semi-insulating material. The article analyzes the literature in terms of parameters and possibilities of using PCSS switches, as well as currently used switches in power and pulse power electronic system. The results of laboratory tests for the prototype model of the GaP-based switch were presented and compared with the PCSS switch parameters from the literature. The operating principle, parameters and application of IGBT transistor, thyristor, opto-thyristor, spark gap and power switch were presented and discussed. An analysis of the possibilities of replacing selected elements by the PCSS switch was carried out, taking into account the pros and cons of the compared devices. The possibility of using the currently made PCSS switch from gallium phosphide was also discussed.","PeriodicalId":54670,"journal":{"name":"Opto-Electronics Review","volume":"87 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72922889","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-04-01DOI: 10.24425/opelre.2022.143433
{"title":"Method to determine solar-blind ultraviolet energy and electrical corona loss relation","authors":"","doi":"10.24425/opelre.2022.143433","DOIUrl":"https://doi.org/10.24425/opelre.2022.143433","url":null,"abstract":"","PeriodicalId":54670,"journal":{"name":"Opto-Electronics Review","volume":"1 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82962870","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-04-01DOI: 10.24425/opelre.2021.139602
{"title":"Effect of heat treatment on the surface morphology and optical properties of the Al2O3 thin film for use in solar cells","authors":"","doi":"10.24425/opelre.2021.139602","DOIUrl":"https://doi.org/10.24425/opelre.2021.139602","url":null,"abstract":"","PeriodicalId":54670,"journal":{"name":"Opto-Electronics Review","volume":"7 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81790427","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-04-01DOI: 10.24425/opelre.2022.140550
{"title":"Performance improvement of a novel zero cross-correlation code using Pascal’s triangle matrix for SAC-OCDMA systems","authors":"","doi":"10.24425/opelre.2022.140550","DOIUrl":"https://doi.org/10.24425/opelre.2022.140550","url":null,"abstract":"","PeriodicalId":54670,"journal":{"name":"Opto-Electronics Review","volume":"14 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80976854","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-04-01DOI: 10.24425/opelre.2022.143607
{"title":"Numerical simulations of a simple refractive index sensor based on side-hole optical fibres","authors":"","doi":"10.24425/opelre.2022.143607","DOIUrl":"https://doi.org/10.24425/opelre.2022.143607","url":null,"abstract":"","PeriodicalId":54670,"journal":{"name":"Opto-Electronics Review","volume":"44 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75105652","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-04-01DOI: 10.24425/OPELRE.2020.135257
E. Tanış, N. Çankaya
Article history: Received 26 Mar. 2020 Received in revised form 29 Jun. 2020 Accepted 03 Sep. 2020 In this article, synthesis, electronic and optical properties of an N-cyclohexylacrylamide (NCA) molecule are described based on different solvent environments and supported by theoretical calculations. Theoretical calculations have been carried out using a density function theory (DFT). Temperature dependence of the sample electrical resistance has been obtained by a four-point probe technique. Experimental and semitheoretical parameters such as optical density, transmittance, optical band gap, refractive index of the NCA for different solvents were obtained. Both optical values and electrical resistance values have shown that NCA is a semiconductor material. The values of HOMO and LUMO energy levels of the headline molecule indicate that it can be used as the electron transfer material in OLEDs. All results obtained confirm that the NCA is a candidate molecule for OLED and optoelectronic applications.
{"title":"Electronic, optical and non-linear optical properties of an N cyclohexylacrylamide molecule: a potential optoelectronic agent","authors":"E. Tanış, N. Çankaya","doi":"10.24425/OPELRE.2020.135257","DOIUrl":"https://doi.org/10.24425/OPELRE.2020.135257","url":null,"abstract":"Article history: Received 26 Mar. 2020 Received in revised form 29 Jun. 2020 Accepted 03 Sep. 2020 In this article, synthesis, electronic and optical properties of an N-cyclohexylacrylamide (NCA) molecule are described based on different solvent environments and supported by theoretical calculations. Theoretical calculations have been carried out using a density function theory (DFT). Temperature dependence of the sample electrical resistance has been obtained by a four-point probe technique. Experimental and semitheoretical parameters such as optical density, transmittance, optical band gap, refractive index of the NCA for different solvents were obtained. Both optical values and electrical resistance values have shown that NCA is a semiconductor material. The values of HOMO and LUMO energy levels of the headline molecule indicate that it can be used as the electron transfer material in OLEDs. All results obtained confirm that the NCA is a candidate molecule for OLED and optoelectronic applications.","PeriodicalId":54670,"journal":{"name":"Opto-Electronics Review","volume":"67 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80256423","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-04-01DOI: 10.24425/opelre.2020.135259
{"title":"Dimming control schemes combining IEEE 802.15.7 and SC-LPPM modulation schemes with an adaptive M-QAM OFDM for indoor LOS VLC systems","authors":"","doi":"10.24425/opelre.2020.135259","DOIUrl":"https://doi.org/10.24425/opelre.2020.135259","url":null,"abstract":"","PeriodicalId":54670,"journal":{"name":"Opto-Electronics Review","volume":"115 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79449283","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-04-01DOI: 10.24425/OPELRE.2020.133673
M. Ghrib, B. Tlili, M. Razeg, R. Ouertani, M. Gaidi, H. Ezzaouia
Laboratory of Semiconductor Nanostructures and Advanced Technologies (LASNTA), Research Centre and Energy Technologies, Borj-Cédria, Tunisia Higher Institute of Environmental Sciences and Technologies of Borj-Cédria (ISSTE) University of Tunis El Manar, National School of Engineers Tunis, LR-11-ES19 Laboratory of Applied Mechanics and Engineering (LR-MAI), 1002 Tunis, Tunisia Laboratoire de Photovoltaïque, Centre de Recherches et des Technologies de l’Energie, Technopole de Borj-Cédria, BP 95, 2050 Hammam-Lif, Tunisia Department of Applied Physics and Astronomy, University of Sharjah, PO Box 27272, Sharjah, United Arab Emirates Sharjah
{"title":"Effect of Al2O3 decoration on the opto-electrical properties of a porous Si/Cr2O3 composite","authors":"M. Ghrib, B. Tlili, M. Razeg, R. Ouertani, M. Gaidi, H. Ezzaouia","doi":"10.24425/OPELRE.2020.133673","DOIUrl":"https://doi.org/10.24425/OPELRE.2020.133673","url":null,"abstract":"Laboratory of Semiconductor Nanostructures and Advanced Technologies (LASNTA), Research Centre and Energy Technologies, Borj-Cédria, Tunisia Higher Institute of Environmental Sciences and Technologies of Borj-Cédria (ISSTE) University of Tunis El Manar, National School of Engineers Tunis, LR-11-ES19 Laboratory of Applied Mechanics and Engineering (LR-MAI), 1002 Tunis, Tunisia Laboratoire de Photovoltaïque, Centre de Recherches et des Technologies de l’Energie, Technopole de Borj-Cédria, BP 95, 2050 Hammam-Lif, Tunisia Department of Applied Physics and Astronomy, University of Sharjah, PO Box 27272, Sharjah, United Arab Emirates Sharjah","PeriodicalId":54670,"journal":{"name":"Opto-Electronics Review","volume":"16 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72514495","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-04-01DOI: 10.24425/opelre.2021.135830
{"title":"Detector diode circuit noise measurement and power supply method selection for the fiber optic seismograph","authors":"","doi":"10.24425/opelre.2021.135830","DOIUrl":"https://doi.org/10.24425/opelre.2021.135830","url":null,"abstract":"","PeriodicalId":54670,"journal":{"name":"Opto-Electronics Review","volume":"218 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75610734","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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