Pub Date : 2011-12-15DOI: 10.1109/IRMMW-THZ.2011.6104985
Y. Zhang, D. Naylor, B. Gom, P. Mauskopf
We report on the fabrication and characterization of a voltage-biased superconducting bolometer (VSB) in a cryogen-free 4 K cryostat for applications at far-infrared wavelengths. The VSB is made using standard microfabrication techniques. An optical NEP of 0.83 pW/√Hz has been measured with a Tc ∼7.12 K.
{"title":"Fabrication of a high Tc voltage-biased superconducting bolometer","authors":"Y. Zhang, D. Naylor, B. Gom, P. Mauskopf","doi":"10.1109/IRMMW-THZ.2011.6104985","DOIUrl":"https://doi.org/10.1109/IRMMW-THZ.2011.6104985","url":null,"abstract":"We report on the fabrication and characterization of a voltage-biased superconducting bolometer (VSB) in a cryogen-free 4 K cryostat for applications at far-infrared wavelengths. The VSB is made using standard microfabrication techniques. An optical NEP of 0.83 pW/√Hz has been measured with a Tc ∼7.12 K.","PeriodicalId":6353,"journal":{"name":"2011 International Conference on Infrared, Millimeter, and Terahertz Waves","volume":"26 1","pages":"1-2"},"PeriodicalIF":0.0,"publicationDate":"2011-12-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88758921","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-12-15DOI: 10.1109/IRMMW-THZ.2011.6104967
J. Grundt, Caesar Cerna, Caleb C Roth, B. Ibey, Dawn Lipscomb, I. Echchgadda, G. Wilmink
The effects of Terahertz (THz) radiation on biological materials are not well characterized. In this study, we show that 2.52 THz radiation triggers human cells to dramatically up-regulate the expression of genes that encode for proteins involved in the cellular stress response and inflammation.
{"title":"Terahertz radiation triggers a signature gene expression profile in human cells","authors":"J. Grundt, Caesar Cerna, Caleb C Roth, B. Ibey, Dawn Lipscomb, I. Echchgadda, G. Wilmink","doi":"10.1109/IRMMW-THZ.2011.6104967","DOIUrl":"https://doi.org/10.1109/IRMMW-THZ.2011.6104967","url":null,"abstract":"The effects of Terahertz (THz) radiation on biological materials are not well characterized. In this study, we show that 2.52 THz radiation triggers human cells to dramatically up-regulate the expression of genes that encode for proteins involved in the cellular stress response and inflammation.","PeriodicalId":6353,"journal":{"name":"2011 International Conference on Infrared, Millimeter, and Terahertz Waves","volume":"7 1","pages":"1-2"},"PeriodicalIF":0.0,"publicationDate":"2011-12-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89366269","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-12-15DOI: 10.1109/IRMMW-THZ.2011.6105041
I. Kašalynas, R. Venckevicius, D. Seliuta, G. Valušis
Spectroscopic terahertz imaging with the InGaAs-based bow-tie diode as room temperature THz detector was proposed. Images were recorded in transmission mode from 0.5 THz up to 2.5 THz applying an optically-pumped molecular THz laser. The content of compounds in test samples was studied and discriminated from the spectroscopic imaging results along with Fourier spectroscopy data.
{"title":"Spectroscopic terahertz imaging with the InGaAs-based bow-tie diode","authors":"I. Kašalynas, R. Venckevicius, D. Seliuta, G. Valušis","doi":"10.1109/IRMMW-THZ.2011.6105041","DOIUrl":"https://doi.org/10.1109/IRMMW-THZ.2011.6105041","url":null,"abstract":"Spectroscopic terahertz imaging with the InGaAs-based bow-tie diode as room temperature THz detector was proposed. Images were recorded in transmission mode from 0.5 THz up to 2.5 THz applying an optically-pumped molecular THz laser. The content of compounds in test samples was studied and discriminated from the spectroscopic imaging results along with Fourier spectroscopy data.","PeriodicalId":6353,"journal":{"name":"2011 International Conference on Infrared, Millimeter, and Terahertz Waves","volume":"9 1","pages":"1-2"},"PeriodicalIF":0.0,"publicationDate":"2011-12-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87362539","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-12-15DOI: 10.1109/IRMMW-THZ.2011.6105196
J. Kyoung, E. Jang, M. Lima, Hyeongryeol Park, Y. H. Kim, R. Baughman, Dai‐Sik Kim
We present ideal terahertz linear polarizers made of a 1 μm-thick freestanding carbon nanotube film consisting of highly-aligned multi-wall CNT sheets. The extinction ratio of our polarizer reaches ∼30 dB from 0.1 to 2.0 THz. Since neither e-beam lithography nor chemical etching is needed, easy, quick and safe manufacture of the polarizer is possible.
{"title":"High performance terahertz polarizer based on super-aligned carbon nanotube sheet","authors":"J. Kyoung, E. Jang, M. Lima, Hyeongryeol Park, Y. H. Kim, R. Baughman, Dai‐Sik Kim","doi":"10.1109/IRMMW-THZ.2011.6105196","DOIUrl":"https://doi.org/10.1109/IRMMW-THZ.2011.6105196","url":null,"abstract":"We present ideal terahertz linear polarizers made of a 1 μm-thick freestanding carbon nanotube film consisting of highly-aligned multi-wall CNT sheets. The extinction ratio of our polarizer reaches ∼30 dB from 0.1 to 2.0 THz. Since neither e-beam lithography nor chemical etching is needed, easy, quick and safe manufacture of the polarizer is possible.","PeriodicalId":6353,"journal":{"name":"2011 International Conference on Infrared, Millimeter, and Terahertz Waves","volume":"11 1","pages":"1-2"},"PeriodicalIF":0.0,"publicationDate":"2011-12-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80620991","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-12-15DOI: 10.1109/IRMMW-THZ.2011.6104840
S. Ramani, M. Reiten, D. R. Chowdhury, A. Taylor, J. O’Hara, R. Cheville, A. Azad
We measure for the first time at terahertz frequencies, independent of background signal, the radiation due to the fundamental resonance of a split ring oscillator array. A reference free method of probing metamaterial resonance via attenuated total reflection is demonstrated.
{"title":"Metamaterial radiation from attenuated total reflection at terahertz frequencies","authors":"S. Ramani, M. Reiten, D. R. Chowdhury, A. Taylor, J. O’Hara, R. Cheville, A. Azad","doi":"10.1109/IRMMW-THZ.2011.6104840","DOIUrl":"https://doi.org/10.1109/IRMMW-THZ.2011.6104840","url":null,"abstract":"We measure for the first time at terahertz frequencies, independent of background signal, the radiation due to the fundamental resonance of a split ring oscillator array. A reference free method of probing metamaterial resonance via attenuated total reflection is demonstrated.","PeriodicalId":6353,"journal":{"name":"2011 International Conference on Infrared, Millimeter, and Terahertz Waves","volume":"158 1","pages":"1-2"},"PeriodicalIF":0.0,"publicationDate":"2011-12-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89243887","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-12-15DOI: 10.1109/IRMMW-THZ.2011.6104915
S. Saha, J. Grant, Yong Ma, A. Khalid, F. Hong, D. Cumming
A silicon birefringence device for performing vector transmission spectroscopy on polar solvent at terahertz frequencies is presented. The device enables direct measurement of the complex dielectric function of isopropyl alcohol in water and can differentiate the various concentrations.
{"title":"Terahertz frequency domain spectroscopy for polar alcohol","authors":"S. Saha, J. Grant, Yong Ma, A. Khalid, F. Hong, D. Cumming","doi":"10.1109/IRMMW-THZ.2011.6104915","DOIUrl":"https://doi.org/10.1109/IRMMW-THZ.2011.6104915","url":null,"abstract":"A silicon birefringence device for performing vector transmission spectroscopy on polar solvent at terahertz frequencies is presented. The device enables direct measurement of the complex dielectric function of isopropyl alcohol in water and can differentiate the various concentrations.","PeriodicalId":6353,"journal":{"name":"2011 International Conference on Infrared, Millimeter, and Terahertz Waves","volume":"61 1","pages":"1-2"},"PeriodicalIF":0.0,"publicationDate":"2011-12-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90957211","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-12-15DOI: 10.1109/IRMMW-THZ.2011.6105049
D. Molter, A. Wagner, S. Weber, J. Jonuscheit, R. Beigang
We present a novel technique to generate a continuous, broadband terahertz spectrum with non AR-coated laser diodes. The combination of two spectrally controlled diode lasers and the use of their combined output in a terahertz cross-correlation spectroscopy setup results in signals principally comparable to that of femtosecond pumped TDS systems.
{"title":"Terahertz cross-correlation system with a combless spectrum","authors":"D. Molter, A. Wagner, S. Weber, J. Jonuscheit, R. Beigang","doi":"10.1109/IRMMW-THZ.2011.6105049","DOIUrl":"https://doi.org/10.1109/IRMMW-THZ.2011.6105049","url":null,"abstract":"We present a novel technique to generate a continuous, broadband terahertz spectrum with non AR-coated laser diodes. The combination of two spectrally controlled diode lasers and the use of their combined output in a terahertz cross-correlation spectroscopy setup results in signals principally comparable to that of femtosecond pumped TDS systems.","PeriodicalId":6353,"journal":{"name":"2011 International Conference on Infrared, Millimeter, and Terahertz Waves","volume":"18 1","pages":"1-2"},"PeriodicalIF":0.0,"publicationDate":"2011-12-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90535225","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-12-15DOI: 10.1109/IRMMW-THZ.2011.6104920
F. Hindle, M. Guinet, S. Eliet, A. Cuisset, R. Bocquet, G. Mouret
Photomixing is an attractive solution for high resolution spectroscopy, nevertheless it has suffered from a lack of frequency metrology to determine the line centre frequencies. Frequency combs can provide excellent metrology of lasers, hence we propose a photomixing source that is phase locked to a frequency comb to overcome this problem. The resulting instrument has an accuracy of ΔνTHz/νTHz = 10−8, a spectral purity in the order of 50 kHz and can be continuously tuned over 200 MHz.
{"title":"Large tuning range THz synthesiser by means of photomixing","authors":"F. Hindle, M. Guinet, S. Eliet, A. Cuisset, R. Bocquet, G. Mouret","doi":"10.1109/IRMMW-THZ.2011.6104920","DOIUrl":"https://doi.org/10.1109/IRMMW-THZ.2011.6104920","url":null,"abstract":"Photomixing is an attractive solution for high resolution spectroscopy, nevertheless it has suffered from a lack of frequency metrology to determine the line centre frequencies. Frequency combs can provide excellent metrology of lasers, hence we propose a photomixing source that is phase locked to a frequency comb to overcome this problem. The resulting instrument has an accuracy of Δν<inf>THz</inf>/ν<inf>THz</inf> = 10<sup>−8</sup>, a spectral purity in the order of 50 kHz and can be continuously tuned over 200 MHz.","PeriodicalId":6353,"journal":{"name":"2011 International Conference on Infrared, Millimeter, and Terahertz Waves","volume":"5 1","pages":"1-2"},"PeriodicalIF":0.0,"publicationDate":"2011-12-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87212917","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-12-15DOI: 10.1109/IRMMW-THZ.2011.6105249
T. Sakamoto, K. Nakayama, A. Portieri, D. Arnone, D. Sasakura, P. Taday, A. Zeitler, T. Kawanishi, Y. Hiyama
Quality attribute of tablet coating on a film-coating process was investigated by a terahertz pulsed imaging. The time-dependent change of intensities of reflex THz pulse and coating layer thicknesses were compared. The forming of coating layer was observed at 30 min after the process was started.
{"title":"Time-course analysis of tablet film-coating using terahertz pulsed imaging","authors":"T. Sakamoto, K. Nakayama, A. Portieri, D. Arnone, D. Sasakura, P. Taday, A. Zeitler, T. Kawanishi, Y. Hiyama","doi":"10.1109/IRMMW-THZ.2011.6105249","DOIUrl":"https://doi.org/10.1109/IRMMW-THZ.2011.6105249","url":null,"abstract":"Quality attribute of tablet coating on a film-coating process was investigated by a terahertz pulsed imaging. The time-dependent change of intensities of reflex THz pulse and coating layer thicknesses were compared. The forming of coating layer was observed at 30 min after the process was started.","PeriodicalId":6353,"journal":{"name":"2011 International Conference on Infrared, Millimeter, and Terahertz Waves","volume":"77 1","pages":"1-2"},"PeriodicalIF":0.0,"publicationDate":"2011-12-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76588713","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-12-15DOI: 10.1109/IRMMW-THZ.2011.6105026
Y. Miyamoto, T. Kanazawa, H. Saito
To realize high-current-density FETs, heavily doped source regions are essential; however, ion implantation of III-V materials cannot supply a sufficiently high level of doping. Our approach to the realization of heavily doped source regions is based on epitaxially grown sources. One approach is the use of an InP/InGaAs composite channel MISFET with regrown InGaAs source/drain. When a gate length of 170 nm was used, Id at Vd = 1 V was 1.34 A/mm. Another approach is the fabrication of a vertical FET. In the case of the vertical FET, an electron launcher for the ballistic transportation of electrons was also introduced. In the fabricated device, the width of the channel mesa was 15 nm. The observed drain current density at Vd = 0.75 V was 1.1 A/mm.
{"title":"High-current-density InP ultrafine devices for high-speed operation","authors":"Y. Miyamoto, T. Kanazawa, H. Saito","doi":"10.1109/IRMMW-THZ.2011.6105026","DOIUrl":"https://doi.org/10.1109/IRMMW-THZ.2011.6105026","url":null,"abstract":"To realize high-current-density FETs, heavily doped source regions are essential; however, ion implantation of III-V materials cannot supply a sufficiently high level of doping. Our approach to the realization of heavily doped source regions is based on epitaxially grown sources. One approach is the use of an InP/InGaAs composite channel MISFET with regrown InGaAs source/drain. When a gate length of 170 nm was used, Id at Vd = 1 V was 1.34 A/mm. Another approach is the fabrication of a vertical FET. In the case of the vertical FET, an electron launcher for the ballistic transportation of electrons was also introduced. In the fabricated device, the width of the channel mesa was 15 nm. The observed drain current density at Vd = 0.75 V was 1.1 A/mm.","PeriodicalId":6353,"journal":{"name":"2011 International Conference on Infrared, Millimeter, and Terahertz Waves","volume":"210 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2011-12-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76972725","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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