Research on high performance terahertz (THz) detector is essential for promoting the application of THz science and technology. Lithium tantalate crystal (LiTaO3) was used to fabricate the THz detector in this paper. Polishing process were used to reduce the thickness of LiTaO3 crystal slice obtained the area of 2mm×2mm×10μm LiTaO3 wafer pyroelectric coefficient of 4.7×10-4Cm-2K-1 by chemical mechanical polishing techniques. The THz responsivity for detector tested by lock in amplifier reaches 8.38×104V/W and the lowest noise equivalent power value (NEP) reaches 3.25×10-12W at 20Hz operating frequency use 2.52THz radiation, which is suitable for THz imaging application. Meanwhile it provides a feasible approach for fabricating high responsivity THz detector.
{"title":"High performance THz detector based on ultra-thin LiTaO3 crystal","authors":"Zhiqing Liang, Ziji Liu, Tao Wang, Yadong Jiang, Xing Zheng, Zehua Huang, Xuefei Wu","doi":"10.1109/IRMMW-THZ.2015.7327772","DOIUrl":"https://doi.org/10.1109/IRMMW-THZ.2015.7327772","url":null,"abstract":"Research on high performance terahertz (THz) detector is essential for promoting the application of THz science and technology. Lithium tantalate crystal (LiTaO<sub>3</sub>) was used to fabricate the THz detector in this paper. Polishing process were used to reduce the thickness of LiTaO<sub>3</sub> crystal slice obtained the area of 2mm×2mm×10μm LiTaO<sub>3</sub> wafer pyroelectric coefficient of 4.7×10<sup>-4</sup>Cm<sup>-2</sup>K<sup>-1</sup> by chemical mechanical polishing techniques. The THz responsivity for detector tested by lock in amplifier reaches 8.38×10<sup>4</sup>V/W and the lowest noise equivalent power value (NEP) reaches 3.25×10<sup>-12</sup>W at 20Hz operating frequency use 2.52THz radiation, which is suitable for THz imaging application. Meanwhile it provides a feasible approach for fabricating high responsivity THz detector.","PeriodicalId":6577,"journal":{"name":"2015 40th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz)","volume":"7 1","pages":"1-2"},"PeriodicalIF":0.0,"publicationDate":"2015-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79270675","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-11-12DOI: 10.1109/IRMMW-THZ.2015.7327580
C. Ponseca, V. Sundstrom
The need for developing highly efficient solar cell devices have never been so pressing until recently when the urgency of using renewable energy sources becomes more evident. There are several promising technologies being explored by many groups with the sole purpose of optimizing harvesting sunlight and converting it to useful electricity. These include, but not limited to, dye- and quantum dot-sensitized, bulk heterojunction organic, inorganic nanowires, and very recently perovskite-based solar cells. In this talk, charge carrier dynamics of an assortment of solar cell technologies probed using time-resolved terahertz spectroscopy will be presented. Electron injection, mobility, charge carrier lifetime and recombination dynamics will be discussed.
{"title":"Understanding charge carrier dynamics in solar cell materials using time resolved terahertz spectroscopy","authors":"C. Ponseca, V. Sundstrom","doi":"10.1109/IRMMW-THZ.2015.7327580","DOIUrl":"https://doi.org/10.1109/IRMMW-THZ.2015.7327580","url":null,"abstract":"The need for developing highly efficient solar cell devices have never been so pressing until recently when the urgency of using renewable energy sources becomes more evident. There are several promising technologies being explored by many groups with the sole purpose of optimizing harvesting sunlight and converting it to useful electricity. These include, but not limited to, dye- and quantum dot-sensitized, bulk heterojunction organic, inorganic nanowires, and very recently perovskite-based solar cells. In this talk, charge carrier dynamics of an assortment of solar cell technologies probed using time-resolved terahertz spectroscopy will be presented. Electron injection, mobility, charge carrier lifetime and recombination dynamics will be discussed.","PeriodicalId":6577,"journal":{"name":"2015 40th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz)","volume":"99 1","pages":"1-1"},"PeriodicalIF":0.0,"publicationDate":"2015-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77563538","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-11-12DOI: 10.1109/IRMMW-THZ.2015.7327831
N. Hunter, A. Mayorov, C. Wood, C. Russell, M. Rosamond, L. Li, E. Linfield, A. Davies, J. Cunningham
We present an on-chip time domain terahertz (TD-THz) system in which picosecond pulses are generated in low-temperature-grown gallium arsenide (LT-GaAs) and detected in graphene. The detected pulses were found to vary in amplitude, full width at half maximum (FWHM), and DC offset when sampled optically at different locations along a 50-μm-long graphene photoconductive (PC) detector. The results demonstrate the importance of detection location and switch design in graphene-based on-chip PC detectors.
{"title":"Spatially resolved on-chip picosecond pulse detection using graphene","authors":"N. Hunter, A. Mayorov, C. Wood, C. Russell, M. Rosamond, L. Li, E. Linfield, A. Davies, J. Cunningham","doi":"10.1109/IRMMW-THZ.2015.7327831","DOIUrl":"https://doi.org/10.1109/IRMMW-THZ.2015.7327831","url":null,"abstract":"We present an on-chip time domain terahertz (TD-THz) system in which picosecond pulses are generated in low-temperature-grown gallium arsenide (LT-GaAs) and detected in graphene. The detected pulses were found to vary in amplitude, full width at half maximum (FWHM), and DC offset when sampled optically at different locations along a 50-μm-long graphene photoconductive (PC) detector. The results demonstrate the importance of detection location and switch design in graphene-based on-chip PC detectors.","PeriodicalId":6577,"journal":{"name":"2015 40th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz)","volume":"29 1","pages":"1-2"},"PeriodicalIF":0.0,"publicationDate":"2015-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79234115","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-11-12DOI: 10.1109/IRMMW-THZ.2015.7327534
C. K. Koch Dandolo, Vincent Cattersel, P. Jepsen
A late 17th century white European lacquered cabinet, attributed to the Gérard Dagly workshop and belonging to the Barbara Piert-Borgers private collection of Far-East and European lacquerware, has been investigated by means of terahertz time domain imaging (THz-TDI), giving new insights into its composition.
{"title":"Terahertz time-domain imaging of a 17th century lacquered cabinet: A contribution to European lacquerwares characterization","authors":"C. K. Koch Dandolo, Vincent Cattersel, P. Jepsen","doi":"10.1109/IRMMW-THZ.2015.7327534","DOIUrl":"https://doi.org/10.1109/IRMMW-THZ.2015.7327534","url":null,"abstract":"A late 17th century white European lacquered cabinet, attributed to the Gérard Dagly workshop and belonging to the Barbara Piert-Borgers private collection of Far-East and European lacquerware, has been investigated by means of terahertz time domain imaging (THz-TDI), giving new insights into its composition.","PeriodicalId":6577,"journal":{"name":"2015 40th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz)","volume":"367 1","pages":"1-2"},"PeriodicalIF":0.0,"publicationDate":"2015-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74184285","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-11-12DOI: 10.1109/IRMMW-THZ.2015.7327455
Yabin Zhang, Zhanliang Wang, Y. Gong, Jinjun Feng
An electric coupling input structure has been proposed for a Ka-band relativistic sheet electron beam traveling wave tube (TWT). This kind of new input structure is easily to be realized and can facilitate the experiment process very much. The results show that this kind of new structure has a good transmission characteristics. The reflection coefficient S11 is less than -25dB from 30GHz to 40GHz and the transmission coefficient S21 is bigger than 0.05dB at the same frequency range. The Ka-band relativistic sheet electron beam TWT with the new kind of input structure, can produce more than a MW pulse radiation.
{"title":"A Ka-band relativistic sheet electron beam traveling wave tube using electric coupling input structure","authors":"Yabin Zhang, Zhanliang Wang, Y. Gong, Jinjun Feng","doi":"10.1109/IRMMW-THZ.2015.7327455","DOIUrl":"https://doi.org/10.1109/IRMMW-THZ.2015.7327455","url":null,"abstract":"An electric coupling input structure has been proposed for a Ka-band relativistic sheet electron beam traveling wave tube (TWT). This kind of new input structure is easily to be realized and can facilitate the experiment process very much. The results show that this kind of new structure has a good transmission characteristics. The reflection coefficient S11 is less than -25dB from 30GHz to 40GHz and the transmission coefficient S21 is bigger than 0.05dB at the same frequency range. The Ka-band relativistic sheet electron beam TWT with the new kind of input structure, can produce more than a MW pulse radiation.","PeriodicalId":6577,"journal":{"name":"2015 40th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz)","volume":"16 1","pages":"1-2"},"PeriodicalIF":0.0,"publicationDate":"2015-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75465487","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-11-12DOI: 10.1109/IRMMW-THZ.2015.7327947
A. Kanno, N. Sekine, Y. Uzawa, I. Hosako, T. Kawanishi
Envelope-detector-based transceiver configurations are useful for both digital signal transmission and radar systems in the terahertz band. A dual-purpose transceiver is demonstrated using a 1-Gb/s on-off keying signal and 12.5-GHz-bandwidth frequency-modulated continuous-wave radar.
{"title":"300-GHz versatile transceiver front-end for both communication and imaging","authors":"A. Kanno, N. Sekine, Y. Uzawa, I. Hosako, T. Kawanishi","doi":"10.1109/IRMMW-THZ.2015.7327947","DOIUrl":"https://doi.org/10.1109/IRMMW-THZ.2015.7327947","url":null,"abstract":"Envelope-detector-based transceiver configurations are useful for both digital signal transmission and radar systems in the terahertz band. A dual-purpose transceiver is demonstrated using a 1-Gb/s on-off keying signal and 12.5-GHz-bandwidth frequency-modulated continuous-wave radar.","PeriodicalId":6577,"journal":{"name":"2015 40th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz)","volume":"90 1","pages":"1-2"},"PeriodicalIF":0.0,"publicationDate":"2015-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75522607","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-11-12DOI: 10.1109/IRMMW-THZ.2015.7327938
M. Zerbini, F. Causa, A. Doria, G. Gallerano, E. Giovenale, A. Tuccillo, G. Galatola-Teka, F. Cuttaia, M. Johnston
We discuss an extensive set of experimental results about the spectroscopic properties of different materials in THz spectral range, as part of the development of a THz-based Plasma Diagnostic for Nuclear Fusion Applications.
{"title":"Progress on THz applications for Plasma Diagnostics","authors":"M. Zerbini, F. Causa, A. Doria, G. Gallerano, E. Giovenale, A. Tuccillo, G. Galatola-Teka, F. Cuttaia, M. Johnston","doi":"10.1109/IRMMW-THZ.2015.7327938","DOIUrl":"https://doi.org/10.1109/IRMMW-THZ.2015.7327938","url":null,"abstract":"We discuss an extensive set of experimental results about the spectroscopic properties of different materials in THz spectral range, as part of the development of a THz-based Plasma Diagnostic for Nuclear Fusion Applications.","PeriodicalId":6577,"journal":{"name":"2015 40th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz)","volume":"2010 1","pages":"1-2"},"PeriodicalIF":0.0,"publicationDate":"2015-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73851170","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-11-12DOI: 10.1109/IRMMW-THZ.2015.7327705
N. Oda, Takayuki Sudou, T. Morimoto, T. Ishi, Syuichi Okubo, G. Isoyama, A. Irizawa, K. Kawase, R. Kato
Both 640×480 and 320×240 terahertz (THz) imagers were developed whose sensitivity were improved in sub-THz region by a factor of 10. The imagers include functions such as external-trigger imaging, lock-in imaging, beam profiling and so forth. The function of the external-trigger imaging was verified, using the pulsed THz free electron laser developed by Osaka University.
{"title":"Externally triggered terahertz imaging for microbolometer focal plane array","authors":"N. Oda, Takayuki Sudou, T. Morimoto, T. Ishi, Syuichi Okubo, G. Isoyama, A. Irizawa, K. Kawase, R. Kato","doi":"10.1109/IRMMW-THZ.2015.7327705","DOIUrl":"https://doi.org/10.1109/IRMMW-THZ.2015.7327705","url":null,"abstract":"Both 640×480 and 320×240 terahertz (THz) imagers were developed whose sensitivity were improved in sub-THz region by a factor of 10. The imagers include functions such as external-trigger imaging, lock-in imaging, beam profiling and so forth. The function of the external-trigger imaging was verified, using the pulsed THz free electron laser developed by Osaka University.","PeriodicalId":6577,"journal":{"name":"2015 40th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz)","volume":"79 1","pages":"1-2"},"PeriodicalIF":0.0,"publicationDate":"2015-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74209322","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-11-12DOI: 10.1109/IRMMW-THZ.2015.7327395
X. Neiers, P. Jeunesse, U. Schmidhammer
We apply single shot THz Time Domain Spectroscopy to control glass fiber reinforced plastics that were machined during their production. The THz imaging reveals that the mechanical processing as hole punching introduced significant modifications to the composite structures, also beyond the directly impacted region. These changes can be precisely localized and further characterized in order to classify the types of defect. The results show that the time of flight information is particularly sensitive to changes in the complex fiber and polymer matrix network. They can be visualized and quantified with B- and C-scans. Thanks to the ultrashort duration and high repetition rate of acquisition, the single shot technology is suited for the control of composites within cycle time of industrial production.
{"title":"Rapid control of machined glass fiber reinforced plastics by single shot terahertz time domain spectroscopy","authors":"X. Neiers, P. Jeunesse, U. Schmidhammer","doi":"10.1109/IRMMW-THZ.2015.7327395","DOIUrl":"https://doi.org/10.1109/IRMMW-THZ.2015.7327395","url":null,"abstract":"We apply single shot THz Time Domain Spectroscopy to control glass fiber reinforced plastics that were machined during their production. The THz imaging reveals that the mechanical processing as hole punching introduced significant modifications to the composite structures, also beyond the directly impacted region. These changes can be precisely localized and further characterized in order to classify the types of defect. The results show that the time of flight information is particularly sensitive to changes in the complex fiber and polymer matrix network. They can be visualized and quantified with B- and C-scans. Thanks to the ultrashort duration and high repetition rate of acquisition, the single shot technology is suited for the control of composites within cycle time of industrial production.","PeriodicalId":6577,"journal":{"name":"2015 40th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz)","volume":"20 1","pages":"1-2"},"PeriodicalIF":0.0,"publicationDate":"2015-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74242840","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-11-12DOI: 10.1109/IRMMW-THZ.2015.7327410
K. Jacobs, B. Stevens, O. Wada, T. Mukai, D. Ohnishi, R. Hogg
We report on a dual-pass high current density InGaAs/AlAs/InP resonant tunnelling diode (RTD) terahertz (THz) emitter. Our dual-pass technique reduces overall fabrication complexity, improves the reproducibility for creating low resistance ohmic contacts, and allows accurate control over the final device area. This has been made possible by measuring the RTD current-voltage (I-V) characteristic during the fabrication process and defining both contact electrodes at the start of the fabrication. We extract information about the RTD performance using this method and demonstrate fundamental room temperature emission at 0.35 THz.
{"title":"A dual-pass high current density resonant tunnelling diode terahertz emitter","authors":"K. Jacobs, B. Stevens, O. Wada, T. Mukai, D. Ohnishi, R. Hogg","doi":"10.1109/IRMMW-THZ.2015.7327410","DOIUrl":"https://doi.org/10.1109/IRMMW-THZ.2015.7327410","url":null,"abstract":"We report on a dual-pass high current density InGaAs/AlAs/InP resonant tunnelling diode (RTD) terahertz (THz) emitter. Our dual-pass technique reduces overall fabrication complexity, improves the reproducibility for creating low resistance ohmic contacts, and allows accurate control over the final device area. This has been made possible by measuring the RTD current-voltage (I-V) characteristic during the fabrication process and defining both contact electrodes at the start of the fabrication. We extract information about the RTD performance using this method and demonstrate fundamental room temperature emission at 0.35 THz.","PeriodicalId":6577,"journal":{"name":"2015 40th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz)","volume":"42 Suppl 18 1","pages":"1-2"},"PeriodicalIF":0.0,"publicationDate":"2015-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91233457","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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