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Improvement in near-infrared absorbance attenuation by using nanometer black silicon composited with gold nanoparticles 纳米黑硅与纳米金复合材料对近红外吸收衰减的改善
IF 4.703 3区 材料科学 Pub Date : 2023-06-03 DOI: 10.1186/s11671-023-03847-z
Guanyu Mi, Jian Lv, Longcheng Que, Cheng Tan, Jian Huang, Zhongyuan Liu, Lintong Zhao

In order to solve the problem of near-infrared (NIR) absorbance attenuation of silicon, a method of preparing gold nanoparticles (AuNPs) on the micro–nano-structured black silicon (B-Si) is proposed. In this study, the local surface plasmon resonance (LSPR) of AuNPs excited by a light field is used to achieve B-Si materials with broad spectrum and high absorption. The results show that nanometer B-Si composited with 25-nm AuNPs has an average absorption of 98.6% in the spectral range of 400–1100 nm and 97.8% in the spectral range of 1100–2500 nm. Compared with ordinary B-Si, the absorption spectrum is broadened from 400–1100 nm to 400–2500 nm, and the absorption is increased from 90.1 to 97.8% at 1100–2500 nm. It is possible to use the B-Si materials in the field of NIR-enhanced photoelectric detection and micro-optical night vision imaging due to the low cost, high compatibility, and reliability.

为了解决硅的近红外(NIR)吸收衰减问题,提出了一种在微纳米结构黑硅(B-Si)上制备金纳米粒子(AuNPs)的方法。本研究利用光场激发AuNPs的局部表面等离子体共振(LSPR)获得广谱高吸收的B-Si材料。结果表明,与25 nm AuNPs复合的纳米B-Si在400 ~ 1100 nm光谱范围内平均吸收率为98.6%,在1100 ~ 2500 nm光谱范围内平均吸收率为97.8%。与普通B-Si相比,吸收光谱从400-1100 nm展宽到400-2500 nm,在1100-2500 nm处吸收率从90.1%提高到97.8%。B-Si材料具有低成本、高兼容性和高可靠性等优点,有望应用于nir增强光电探测和微光夜视成像领域。
{"title":"Improvement in near-infrared absorbance attenuation by using nanometer black silicon composited with gold nanoparticles","authors":"Guanyu Mi,&nbsp;Jian Lv,&nbsp;Longcheng Que,&nbsp;Cheng Tan,&nbsp;Jian Huang,&nbsp;Zhongyuan Liu,&nbsp;Lintong Zhao","doi":"10.1186/s11671-023-03847-z","DOIUrl":"10.1186/s11671-023-03847-z","url":null,"abstract":"<div><p>In order to solve the problem of near-infrared (NIR) absorbance attenuation of silicon, a method of preparing gold nanoparticles (AuNPs) on the micro–nano-structured black silicon (B-Si) is proposed. In this study, the local surface plasmon resonance (LSPR) of AuNPs excited by a light field is used to achieve B-Si materials with broad spectrum and high absorption. The results show that nanometer B-Si composited with 25-nm AuNPs has an average absorption of 98.6% in the spectral range of 400–1100 nm and 97.8% in the spectral range of 1100–2500 nm. Compared with ordinary B-Si, the absorption spectrum is broadened from 400–1100 nm to 400–2500 nm, and the absorption is increased from 90.1 to 97.8% at 1100–2500 nm. It is possible to use the B-Si materials in the field of NIR-enhanced photoelectric detection and micro-optical night vision imaging due to the low cost, high compatibility, and reliability.</p></div>","PeriodicalId":715,"journal":{"name":"Nanoscale Research Letters","volume":"18 1","pages":""},"PeriodicalIF":4.703,"publicationDate":"2023-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1186/s11671-023-03847-z.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"4129825","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Schottky barrier height engineering on MoS2 field-effect transistors using a polymer surface modifier on a contact electrode 在接触电极上使用聚合物表面改性剂对二硫化钼场效应晶体管进行肖特基势垒高度工程
IF 4.703 3区 材料科学 Pub Date : 2023-05-31 DOI: 10.1186/s11671-023-03855-z
Dongwon Choi, Jeehoon Jeon, Tae-Eon Park, Byeong-Kwon Ju, Ki-Young Lee

Two-dimensional (2D) materials are highly sought after for their superior semiconducting properties, making them promising candidates for next-generation electronic and optoelectronic devices. Transition-metal dichalcogenides (TMDCs), such as molybdenum disulfide (MoS2) and tungsten diselenide (WSe2), are promising alternative 2D materials. However, the devices based on these materials experience performance deterioration due to the formation of a Schottky barrier between metal contacts and semiconducting TMDCs. Here, we performed experiments to reduce the Schottky barrier height of MoS2 field-effect transistors (FETs) by lowering the work function (Фm = Evacuum − EF,metal) of the contact metal. We chose polyethylenimine (PEI), a polymer containing simple aliphatic amine groups (–NH2), as a surface modifier of the Au (ФAu = 5.10 eV) contact metal. PEI is a well-known surface modifier that lowers the work function of various conductors such as metals and conducting polymers. Such surface modifiers have thus far been utilized in organic-based devices, including organic light-emitting diodes, organic solar cells, and organic thin-film transistors. In this study, we used the simple PEI coating to tune the work function of the contact electrodes of MoS2 FETs. The proposed method is rapid, easy to implement under ambient conditions, and effectively reduces the Schottky barrier height. We expect this simple and effective method to be widely used in large-area electronics and optoelectronics due to its numerous advantages.

二维(2D)材料因其优越的半导体特性而备受追捧,使其成为下一代电子和光电子器件的有希望的候选者。过渡金属二硫化物(TMDCs),如二硫化钼(MoS2)和二硒化钨(WSe2),是有前途的替代二维材料。然而,由于在金属触点和半导体TMDCs之间形成肖特基屏障,基于这些材料的器件的性能会下降。在这里,我们通过降低接触金属的功函数(Фm = evacum−EF,metal)来降低MoS2场效应晶体管(fet)的肖特基势垒高度。我们选择聚乙烯亚胺(PEI),一种含有简单脂肪族胺(-NH2)的聚合物,作为Au (ФAu = 5.10 eV)接触金属的表面改性剂。PEI是一种众所周知的表面改性剂,可以降低各种导体(如金属和导电聚合物)的功函数。迄今为止,这种表面改性剂已用于有机基器件,包括有机发光二极管、有机太阳能电池和有机薄膜晶体管。在本研究中,我们使用简单的PEI涂层来调整MoS2 fet的接触电极的功函数。该方法快速,易于在环境条件下实现,并且有效地降低了肖特基势垒高度。这种简单有效的方法具有诸多优点,可望在大面积电子学和光电子学领域得到广泛应用。
{"title":"Schottky barrier height engineering on MoS2 field-effect transistors using a polymer surface modifier on a contact electrode","authors":"Dongwon Choi,&nbsp;Jeehoon Jeon,&nbsp;Tae-Eon Park,&nbsp;Byeong-Kwon Ju,&nbsp;Ki-Young Lee","doi":"10.1186/s11671-023-03855-z","DOIUrl":"10.1186/s11671-023-03855-z","url":null,"abstract":"<div><p>Two-dimensional (2D) materials are highly sought after for their superior semiconducting properties, making them promising candidates for next-generation electronic and optoelectronic devices. Transition-metal dichalcogenides (TMDCs), such as molybdenum disulfide (MoS<sub>2</sub>) and tungsten diselenide (WSe<sub>2</sub>), are promising alternative 2D materials. However, the devices based on these materials experience performance deterioration due to the formation of a Schottky barrier between metal contacts and semiconducting TMDCs. Here, we performed experiments to reduce the Schottky barrier height of MoS<sub>2</sub> field-effect transistors (FETs) by lowering the work function (<i>Ф</i><sub>m</sub> = <i>E</i><sub>vacuum</sub> − <i>E</i><sub>F,metal</sub>) of the contact metal. We chose polyethylenimine (PEI), a polymer containing simple aliphatic amine groups (–NH<sub>2</sub>), as a surface modifier of the Au (<i>Ф</i><sub>Au</sub> = 5.10 eV) contact metal. PEI is a well-known surface modifier that lowers the work function of various conductors such as metals and conducting polymers. Such surface modifiers have thus far been utilized in organic-based devices, including organic light-emitting diodes, organic solar cells, and organic thin-film transistors. In this study, we used the simple PEI coating to tune the work function of the contact electrodes of MoS<sub>2</sub> FETs. The proposed method is rapid, easy to implement under ambient conditions, and effectively reduces the Schottky barrier height. We expect this simple and effective method to be widely used in large-area electronics and optoelectronics due to its numerous advantages.</p></div>","PeriodicalId":715,"journal":{"name":"Nanoscale Research Letters","volume":"18 1","pages":""},"PeriodicalIF":4.703,"publicationDate":"2023-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1186/s11671-023-03855-z.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"5184892","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Demonstration of MOCVD-grown Ga2O3 power MOSFETs on sapphire with in-situ Si-doped by tetraethyl orthosilicate (TEOS) 原位正硅酸四乙酯(TEOS)硅掺杂蓝宝石表面mocvd生长Ga2O3功率mosfet的研究
IF 4.703 3区 材料科学 Pub Date : 2023-05-30 DOI: 10.1186/s11671-023-03858-w
Sao Thien Ngo, Chan-Hung Lu, Fu-Gow Tarntair, Sheng-Ti Chung, Tian-Li Wu, Ray-Hua Horng

In this work, we demonstrated Ga2O3-based power MOSFETs grown on c-plane sapphire substrates using in-situ TEOS doping for the first time. The β-Ga2O3:Si epitaxial layers were formed by the metalorganic chemical vapor deposition (MOCVD) with a TEOS as a dopant source. The depletion-mode Ga2O3 power MOSFETs are fabricated and characterized, showing the increase of the current, transconductance, and breakdown voltage at 150 °C. In addition, the sample with the TEOS flow rate of 20 sccm exhibited a breakdown voltage of more than 400 V at RT and 150 °C, indicating that the in-situ Si doping by TEOS in MOCVD is a promising method for Ga2O3 power MOSFETs.

在这项工作中,我们首次展示了使用原位TEOS掺杂在c平面蓝宝石衬底上生长的ga2o3基功率mosfet。采用金属有机化学气相沉积(MOCVD)技术,以TEOS为掺杂源制备了β-Ga2O3:Si外延层。制备了耗尽模式Ga2O3功率mosfet,并对其进行了表征,发现在150℃下,电流、跨导和击穿电压均有所增加。此外,TEOS流量为20 sccm的样品在RT和150℃下击穿电压大于400 V,表明在MOCVD中TEOS原位掺杂Si是制备Ga2O3功率mosfet的一种很有前途的方法。
{"title":"Demonstration of MOCVD-grown Ga2O3 power MOSFETs on sapphire with in-situ Si-doped by tetraethyl orthosilicate (TEOS)","authors":"Sao Thien Ngo,&nbsp;Chan-Hung Lu,&nbsp;Fu-Gow Tarntair,&nbsp;Sheng-Ti Chung,&nbsp;Tian-Li Wu,&nbsp;Ray-Hua Horng","doi":"10.1186/s11671-023-03858-w","DOIUrl":"10.1186/s11671-023-03858-w","url":null,"abstract":"<div><p>In this work, we demonstrated Ga<sub>2</sub>O<sub>3</sub>-based power MOSFETs grown on c-plane sapphire substrates using in-situ TEOS doping for the first time. The <i>β</i>-Ga<sub>2</sub>O<sub>3</sub>:Si epitaxial layers were formed by the metalorganic chemical vapor deposition (MOCVD) with a TEOS as a dopant source. The depletion-mode Ga<sub>2</sub>O<sub>3</sub> power MOSFETs are fabricated and characterized, showing the increase of the current, transconductance, and breakdown voltage at 150 °C. In addition, the sample with the TEOS flow rate of 20 sccm exhibited a breakdown voltage of more than 400 V at RT and 150 °C, indicating that the in-situ Si doping by TEOS in MOCVD is a promising method for Ga<sub>2</sub>O<sub>3</sub> power MOSFETs.</p></div>","PeriodicalId":715,"journal":{"name":"Nanoscale Research Letters","volume":"18 1","pages":""},"PeriodicalIF":4.703,"publicationDate":"2023-05-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1186/s11671-023-03858-w.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"5158251","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Nanoscratch-induced formation of metallic micro/nanostructures with resin masks 纳米划痕诱导树脂掩膜金属微/纳米结构的形成
IF 4.703 3区 材料科学 Pub Date : 2023-05-27 DOI: 10.1186/s11671-023-03857-x
Mingyong Xin, Qihui Feng, Changbao Xu, Licong Cui, Jie Zhu, Yinkai Gan, Bingjun Yu

Metallic micro/nanostructures present a wide range of applications due to the small size and superior performances. In order to obtain high-performance devices, it is of great importance to develop new methods for preparing metallic micro/nanostructures with high quality, low cost, and precise position. It is found that metallic micro/nanostructures can be obtained by scratch-induced directional deposition of metals on silicon surface, where the mask plays a key role in the process. This study is focused on the preparation of keto-aldehyde resin masks and their effects on the formation of scratch-induced gold (Au) micro/nanostructures. It is also found that the keto-aldehyde resin with a certain thickness can act as a satisfactory mask for high-quality Au deposition, and the scratches produced under lower normal load and less scratching cycles are more conducive to the formation of compact Au structures. According to the proposed method, two-dimensional Au structures can be prepared on the designed scratching traces, providing a feasible path for fabricating high-quality metal-based sensors.

金属微纳米结构具有体积小、性能优越等优点,具有广泛的应用前景。为了获得高性能的器件,开发高质量、低成本和精确定位的金属微纳米结构的新方法具有重要的意义。发现金属在硅表面的定向沉积可以获得金属微纳结构,其中掩膜在这一过程中起着关键作用。本文主要研究了酮醛树脂掩膜的制备及其对划痕诱导金(Au)微纳米结构形成的影响。同时发现具有一定厚度的酮醛树脂可以作为高质量的金沉积的满意掩膜,并且在较低的正常载荷和较少的划痕周期下产生的划痕更有利于致密金结构的形成。根据所提出的方法,可以在设计的划痕上制备二维Au结构,为制作高质量的金属基传感器提供了可行的途径。
{"title":"Nanoscratch-induced formation of metallic micro/nanostructures with resin masks","authors":"Mingyong Xin,&nbsp;Qihui Feng,&nbsp;Changbao Xu,&nbsp;Licong Cui,&nbsp;Jie Zhu,&nbsp;Yinkai Gan,&nbsp;Bingjun Yu","doi":"10.1186/s11671-023-03857-x","DOIUrl":"10.1186/s11671-023-03857-x","url":null,"abstract":"<div><p>Metallic micro/nanostructures present a wide range of applications due to the small size and superior performances. In order to obtain high-performance devices, it is of great importance to develop new methods for preparing metallic micro/nanostructures with high quality, low cost, and precise position. It is found that metallic micro/nanostructures can be obtained by scratch-induced directional deposition of metals on silicon surface, where the mask plays a key role in the process. This study is focused on the preparation of keto-aldehyde resin masks and their effects on the formation of scratch-induced gold (Au) micro/nanostructures. It is also found that the keto-aldehyde resin with a certain thickness can act as a satisfactory mask for high-quality Au deposition, and the scratches produced under lower normal load and less scratching cycles are more conducive to the formation of compact Au structures. According to the proposed method, two-dimensional Au structures can be prepared on the designed scratching traces, providing a feasible path for fabricating high-quality metal-based sensors.</p></div>","PeriodicalId":715,"journal":{"name":"Nanoscale Research Letters","volume":"18 1","pages":""},"PeriodicalIF":4.703,"publicationDate":"2023-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1186/s11671-023-03857-x.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"5057447","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Structural and optical analyses for InGaN-based red micro-LED 基于ingan的红色微型led的结构和光学分析
IF 4.703 3区 材料科学 Pub Date : 2023-05-25 DOI: 10.1186/s11671-023-03853-1
Fu-He Hsiao, Wen-Chien Miao, Yu-Heng Hong, Hsin Chiang, I-Hung Ho, Kai-Bo Liang, Daisuke Iida, Chun-Liang Lin, Hyeyoung Ahn, Kazuhiro Ohkawa, Chiao-Yun Chang, Hao-Chung Kuo

This study presents a comprehensive analysis of the structural and optical properties of an InGaN-based red micro-LED with a high density of V-shaped pits, offering insights for enhancing emission efficiency. The presence of V-shaped pits is considered advantageous in reducing non-radiative recombination. Furthermore, to systematically investigate the properties of localized states, we conducted temperature-dependent photoluminescence (PL). The results of PL measurements indicate that deep localization in the red double quantum wells can limit carrier escape and improve radiation efficiency. Through a detailed analysis of these results, we extensively investigated the direct impact of epitaxial growth on the efficiency of InGaN red micro-LEDs, thereby laying the foundation for improving efficiency in InGaN-based red micro-LEDs.

本研究全面分析了一种具有高密度v形凹坑的基于ingan的红色微型led的结构和光学特性,为提高发射效率提供了见解。v形凹坑的存在被认为有利于减少非辐射复合。此外,为了系统地研究局域态的性质,我们进行了温度依赖的光致发光(PL)。PL测量结果表明,红色双量子阱的深度局域化可以限制载流子逸出,提高辐射效率。通过对这些结果的详细分析,我们广泛地研究了外延生长对InGaN红色微led效率的直接影响,从而为提高InGaN基红色微led的效率奠定了基础。
{"title":"Structural and optical analyses for InGaN-based red micro-LED","authors":"Fu-He Hsiao,&nbsp;Wen-Chien Miao,&nbsp;Yu-Heng Hong,&nbsp;Hsin Chiang,&nbsp;I-Hung Ho,&nbsp;Kai-Bo Liang,&nbsp;Daisuke Iida,&nbsp;Chun-Liang Lin,&nbsp;Hyeyoung Ahn,&nbsp;Kazuhiro Ohkawa,&nbsp;Chiao-Yun Chang,&nbsp;Hao-Chung Kuo","doi":"10.1186/s11671-023-03853-1","DOIUrl":"10.1186/s11671-023-03853-1","url":null,"abstract":"<div><p>This study presents a comprehensive analysis of the structural and optical properties of an InGaN-based red micro-LED with a high density of V-shaped pits, offering insights for enhancing emission efficiency. The presence of V-shaped pits is considered advantageous in reducing non-radiative recombination. Furthermore, to systematically investigate the properties of localized states, we conducted temperature-dependent photoluminescence (PL). The results of PL measurements indicate that deep localization in the red double quantum wells can limit carrier escape and improve radiation efficiency. Through a detailed analysis of these results, we extensively investigated the direct impact of epitaxial growth on the efficiency of InGaN red micro-LEDs, thereby laying the foundation for improving efficiency in InGaN-based red micro-LEDs.</p></div>","PeriodicalId":715,"journal":{"name":"Nanoscale Research Letters","volume":"18 1","pages":""},"PeriodicalIF":4.703,"publicationDate":"2023-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1186/s11671-023-03853-1.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"4979887","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Carboxymethyl cellulose/sulfur-functionalized Ti-based MOF composite: synthesis, characterization, antimicrobial, antiviral and anticancer potentiality 羧甲基纤维素/硫功能化钛基MOF复合材料:合成、表征、抗菌、抗病毒和抗癌潜力
IF 4.703 3区 材料科学 Pub Date : 2023-05-22 DOI: 10.1186/s11671-023-03852-2
Reda M. Abdelhameed, Mohamed S. Hasanin, Amr H. Hashem

Microbial resistance is the first morbidity and mortality cause for patients as usually a secondary infection. Additionally, the MOF is a promising material that shows a nice activity in this field. However, these materials need a good formulation to enhance biocompatibility and sustainability. Cellulose and its derivatives are well as filers for this gap. In this presented work, a novel green active system based on carboxymethyl cellulose and Ti-MOF (MIL-125-NH2@CMC) modified with thiophene (Thio@MIL-125-NH2@CMC) was prepared by a post-synthetic modification (PSM) route based. FTIR, SEM and PXRD were utilized to characterize nanocomposites. In addition, transmission electron microscopy (TEM) was used to corroborate the nanocomposites' particle size and diffraction pattern as well as the DLS affirmed the size as 50 and 35 nm for MIL-125-NH2@CMC and Thio@MIL-125-NH2@CMC, respectively. The formulation of the nanocomposites was validated by physicochemical characterization techniques, while morphological analysis confirmed the nanoform of the prepared composites. The antimicrobial, antiviral and antitumor properties of MIL-125-NH2@CMC and Thio@MIL-125-NH2@CMC were assessed. Antimicrobial testing revealed that Thio@MIL-125-NH2@CMC possesses greater antimicrobial activity than MIL-125-NH2@CMC. Additionally, Thio@MIL-125-NH2@CMC demonstrated promising antifungal activity against C. albicans and A. niger where MICs were 31.25 and 0.97 µg/mL, respectively. Also, Thio@MIL-125-NH2@CMC exhibited antibacterial activity against E. coli and S. aureus where MICs were 1000 and 250 µg/mL, respectively. In addition, the results demonstrated that Thio@MIL-125-NH2@CMC displayed promising antiviral activity against both HSV1 and COX B4, with antiviral activities of 68.89% and 39.60%, respectively. Furthermore, Thio@MIL-125-NH2@CMC exhibited potential anticancer activity against MCF7 and PC3 cancerous cell lines, where IC50 was 93.16 and 88.45%, respectively. In conclusion, carboxymethyl cellulose/sulfur-functionalized Ti-based MOF composite was successfully synthesized which had antimicrobial, antiviral and anticancer activities.

微生物耐药性是患者发病和死亡的首要原因,通常是继发感染。此外,MOF在该领域表现出良好的活性,是一种很有前途的材料。然而,这些材料需要良好的配方来提高生物相容性和可持续性。纤维素及其衍生物很好地过滤了这一空隙。本文以噻吩(Thio@MIL-125-NH2@CMC)修饰的羧甲基纤维素和Ti-MOF (MIL-125-NH2@CMC)为基础,采用合成后改性(PSM)的方法制备了一种新型绿色活性体系。利用FTIR、SEM和PXRD对纳米复合材料进行表征。此外,透射电镜(TEM)证实了纳米复合材料的粒径和衍射模式,DLS证实了MIL-125-NH2@CMC和Thio@MIL-125-NH2@CMC的粒径分别为50 nm和35 nm。通过物理化学表征技术对纳米复合材料的配方进行了验证,而形态分析证实了所制备的复合材料的纳米形态。评估MIL-125-NH2@CMC和Thio@MIL-125-NH2@CMC的抗菌、抗病毒和抗肿瘤性能。抗菌实验表明Thio@MIL-125-NH2@CMC比MIL-125-NH2@CMC具有更强的抗菌活性。此外,Thio@MIL-125-NH2@CMC对白色念珠菌和黑曲霉具有良好的抗真菌活性,mic分别为31.25和0.97µg/mL。同时,Thio@MIL-125-NH2@CMC在mic分别为1000µg/mL和250µg/mL时,对大肠杆菌和金黄色葡萄球菌具有抗菌活性。此外,研究结果表明Thio@MIL-125-NH2@CMC对HSV1和COX B4均表现出良好的抗病毒活性,抗病毒活性分别为68.89%和39.60%。此外,Thio@MIL-125-NH2@CMC对MCF7和PC3癌细胞具有潜在的抗癌活性,IC50分别为93.16和88.45%。综上所述,成功合成了具有抗菌、抗病毒和抗癌活性的羧甲基纤维素/硫功能化钛基MOF复合材料。
{"title":"Carboxymethyl cellulose/sulfur-functionalized Ti-based MOF composite: synthesis, characterization, antimicrobial, antiviral and anticancer potentiality","authors":"Reda M. Abdelhameed,&nbsp;Mohamed S. Hasanin,&nbsp;Amr H. Hashem","doi":"10.1186/s11671-023-03852-2","DOIUrl":"10.1186/s11671-023-03852-2","url":null,"abstract":"<div><p>Microbial resistance is the first morbidity and mortality cause for patients as usually a secondary infection. Additionally, the MOF is a promising material that shows a nice activity in this field. However, these materials need a good formulation to enhance biocompatibility and sustainability. Cellulose and its derivatives are well as filers for this gap. In this presented work, a novel green active system based on carboxymethyl cellulose and Ti-MOF (MIL-125-NH<sub>2</sub>@CMC) modified with thiophene (Thio@MIL-125-NH<sub>2</sub>@CMC) was prepared by a post-synthetic modification (PSM) route based. FTIR, SEM and PXRD were utilized to characterize nanocomposites. In addition, transmission electron microscopy (TEM) was used to corroborate the nanocomposites' particle size and diffraction pattern as well as the DLS affirmed the size as 50 and 35 nm for MIL-125-NH<sub>2</sub>@CMC and Thio@MIL-125-NH<sub>2</sub>@CMC, respectively. The formulation of the nanocomposites was validated by physicochemical characterization techniques, while morphological analysis confirmed the nanoform of the prepared composites. The antimicrobial, antiviral and antitumor properties of MIL-125-NH<sub>2</sub>@CMC and Thio@MIL-125-NH<sub>2</sub>@CMC were assessed. Antimicrobial testing revealed that Thio@MIL-125-NH<sub>2</sub>@CMC possesses greater antimicrobial activity than MIL-125-NH<sub>2</sub>@CMC. Additionally, Thio@MIL-125-NH<sub>2</sub>@CMC demonstrated promising antifungal activity against <i>C. albicans</i> and <i>A. niger</i> where MICs were 31.25 and 0.97 µg/mL, respectively. Also, Thio@MIL-125-NH<sub>2</sub>@CMC exhibited antibacterial activity against <i>E. coli</i> and <i>S. aureus</i> where MICs were 1000 and 250 µg/mL, respectively. In addition, the results demonstrated that Thio@MIL-125-NH<sub>2</sub>@CMC displayed promising antiviral activity against both HSV1 and COX B4, with antiviral activities of 68.89% and 39.60%, respectively. Furthermore, Thio@MIL-125-NH<sub>2</sub>@CMC exhibited potential anticancer activity against MCF7 and PC3 cancerous cell lines, where IC<sub>50</sub> was 93.16 and 88.45%, respectively. In conclusion, carboxymethyl cellulose/sulfur-functionalized Ti-based MOF composite was successfully synthesized which had antimicrobial, antiviral and anticancer activities.</p></div>","PeriodicalId":715,"journal":{"name":"Nanoscale Research Letters","volume":"18 1","pages":""},"PeriodicalIF":4.703,"publicationDate":"2023-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1186/s11671-023-03852-2.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"4870095","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Nanobiotechnology in crop stress management: an overview of novel applications 纳米生物技术在作物胁迫管理中的新应用综述
IF 4.703 3区 材料科学 Pub Date : 2023-05-15 DOI: 10.1186/s11671-023-03845-1
Ahmad Nawaz, Hafeez ur Rehman, Muhammad Usman, Abdul Wakeel, Muhammad Shafiq Shahid, Sardar Alam, Muhammad Sanaullah, Muhammad Atiq, Muhammad Farooq

Agricultural crops are subject to a variety of biotic and abiotic stresses that adversely affect growth and reduce the yield of crop plantss. Traditional crop stress management approaches are not capable of fulfilling the food demand of the human population which is projected to reach 10 billion by 2050. Nanobiotechnology is the application of nanotechnology in biological fields and has emerged as a sustainable approach to enhancing agricultural productivity by alleviating various plant stresses. This article reviews innovations in nanobiotechnology and its role in promoting plant growth and enhancing plant resistance/tolerance against biotic and abiotic stresses and the underlying mechanisms. Nanoparticles, synthesized through various approaches (physical, chemical and biological), induce plant resistance against these stresses by strengthening the physical barriers, improving plant photosynthesis and activating plant defense mechanisms. The nanoparticles can also upregulate the expression of stress-related genes by increasing anti-stress compounds and activating the expression of defense-related genes. The unique physico-chemical characteristics of nanoparticles enhance biochemical activity and effectiveness to cause diverse impacts on plants. Molecular mechanisms of nanobiotechnology-induced tolerance to abiotic and biotic stresses have also been highlighted. Further research is needed on efficient synthesis methods, optimization of nanoparticle dosages, application techniques and integration with other technologies, and a better understanding of their fate in agricultural systems.

农作物受到各种生物和非生物胁迫,这些胁迫对作物生长产生不利影响,降低作物产量。传统的作物胁迫管理方法无法满足预计到2050年将达到100亿人口的粮食需求。纳米生物技术是纳米技术在生物领域的应用,已经成为一种通过减轻各种植物胁迫来提高农业生产力的可持续方法。本文综述了纳米生物技术的创新及其在促进植物生长和增强植物对生物和非生物胁迫的抗性/耐受性方面的作用及其潜在机制。纳米颗粒通过多种途径(物理、化学和生物)合成,通过加强物理屏障、改善植物光合作用和激活植物防御机制来诱导植物抵抗这些胁迫。纳米颗粒还可以通过增加抗应激化合物和激活防御相关基因的表达来上调应激相关基因的表达。纳米颗粒独特的物理化学特性增强了其生物化学活性和有效性,对植物产生了多种影响。纳米生物技术诱导对非生物和生物胁迫的耐受性的分子机制也得到了强调。需要进一步研究有效的合成方法、纳米颗粒剂量的优化、应用技术和与其他技术的整合,以及更好地了解它们在农业系统中的命运。
{"title":"Nanobiotechnology in crop stress management: an overview of novel applications","authors":"Ahmad Nawaz,&nbsp;Hafeez ur Rehman,&nbsp;Muhammad Usman,&nbsp;Abdul Wakeel,&nbsp;Muhammad Shafiq Shahid,&nbsp;Sardar Alam,&nbsp;Muhammad Sanaullah,&nbsp;Muhammad Atiq,&nbsp;Muhammad Farooq","doi":"10.1186/s11671-023-03845-1","DOIUrl":"10.1186/s11671-023-03845-1","url":null,"abstract":"<div><p>Agricultural crops are subject to a variety of biotic and abiotic stresses that adversely affect growth and reduce the yield of crop plantss. Traditional crop stress management approaches are not capable of fulfilling the food demand of the human population which is projected to reach 10 billion by 2050. Nanobiotechnology is the application of nanotechnology in biological fields and has emerged as a sustainable approach to enhancing agricultural productivity by alleviating various plant stresses. This article reviews innovations in nanobiotechnology and its role in promoting plant growth and enhancing plant resistance/tolerance against biotic and abiotic stresses and the underlying mechanisms. Nanoparticles, synthesized through various approaches (physical, chemical and biological), induce plant resistance against these stresses by strengthening the physical barriers, improving plant photosynthesis and activating plant defense mechanisms. The nanoparticles can also upregulate the expression of stress-related genes by increasing anti-stress compounds and activating the expression of defense-related genes. The unique physico-chemical characteristics of nanoparticles enhance biochemical activity and effectiveness to cause diverse impacts on plants. Molecular mechanisms of nanobiotechnology-induced tolerance to abiotic and biotic stresses have also been highlighted. Further research is needed on efficient synthesis methods, optimization of nanoparticle dosages, application techniques and integration with other technologies, and a better understanding of their fate in agricultural systems.\u0000</p></div>","PeriodicalId":715,"journal":{"name":"Nanoscale Research Letters","volume":"18 1","pages":""},"PeriodicalIF":4.703,"publicationDate":"2023-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1186/s11671-023-03845-1.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"4620890","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Tunable MEMS-based metamaterial nanograting coupler for C-band optical communication application 用于c波段光通信的可调谐mems超材料纳米光栅耦合器
IF 4.703 3区 材料科学 Pub Date : 2023-04-25 DOI: 10.1186/s11671-023-03843-3
Kunye Li, Yu-Sheng Lin

A tunable metamaterial nanograting coupler (MNC) is presented that is composed of a one-dimensional surface nanograting coupler with a bottom reflector and the metamaterial atop. For a single nanograting coupler, by introducing a reflector and optimizing nanograting parameters, the spatial coupling efficiency exceeds 97% around near-infrared wavelength of 1.43 μm. The metamaterial can be tuned by using micro-electro-mechanical system (MEMS) technique. The relative height or lateral offset between metamaterial and coupling nanograting can be controlled, that the light-emitting efficiency can be separated into two different directions. In addition, the coupling efficiency is as high as 91% at the optical C-band communication window. Therefore, the proposed MEMS-based MNC not only has the possibility of coupling optical fibers with high-density integrated optoelectronic chips, but also has potential application prospects in light path switching, variable optical attenuation, and optical switch.

提出了一种可调谐超材料纳米光栅耦合器(MNC),该耦合器由底部带反射镜的一维表面纳米光栅耦合器和顶部的超材料组成。对于单个纳米光栅耦合器,通过引入反射镜并优化纳米光栅参数,在近红外波长1.43 μm附近的空间耦合效率超过97%。利用微机电系统(MEMS)技术可以对超材料进行调谐。可以控制超材料与耦合纳米光栅之间的相对高度或横向偏移量,从而实现两个不同方向的发光效率分离。此外,在光学c波段通信窗口处,耦合效率高达91%。因此,所提出的基于mems的MNC不仅具有光纤与高密度集成光电子芯片耦合的可能性,而且在光路开关、可变光衰减和光开关等方面具有潜在的应用前景。
{"title":"Tunable MEMS-based metamaterial nanograting coupler for C-band optical communication application","authors":"Kunye Li,&nbsp;Yu-Sheng Lin","doi":"10.1186/s11671-023-03843-3","DOIUrl":"10.1186/s11671-023-03843-3","url":null,"abstract":"<div><p>A tunable metamaterial nanograting coupler (MNC) is presented that is composed of a one-dimensional surface nanograting coupler with a bottom reflector and the metamaterial atop. For a single nanograting coupler, by introducing a reflector and optimizing nanograting parameters, the spatial coupling efficiency exceeds 97% around near-infrared wavelength of 1.43 μm. The metamaterial can be tuned by using micro-electro-mechanical system (MEMS) technique. The relative height or lateral offset between metamaterial and coupling nanograting can be controlled, that the light-emitting efficiency can be separated into two different directions. In addition, the coupling efficiency is as high as 91% at the optical C-band communication window. Therefore, the proposed MEMS-based MNC not only has the possibility of coupling optical fibers with high-density integrated optoelectronic chips, but also has potential application prospects in light path switching, variable optical attenuation, and optical switch.</p></div>","PeriodicalId":715,"journal":{"name":"Nanoscale Research Letters","volume":"18 1","pages":""},"PeriodicalIF":4.703,"publicationDate":"2023-04-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1186/s11671-023-03843-3.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"4956182","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Performance optimization of In(Ga)As quantum dot intermediate band solar cells In(Ga)As量子点中间带太阳能电池性能优化
IF 4.703 3区 材料科学 Pub Date : 2023-04-20 DOI: 10.1186/s11671-023-03839-z
Guiqiang Yang, Wen Liu, Yidi Bao, Xiaoling Chen, Chunxue Ji, Bo Wei, Fuhua Yang, Xiaodong Wang

Quantum dot intermediate band solar cell (QD-IBSC) has high efficiency theoretically. It can absorb photons with energy lower than the bandgap of the semiconductor through the half-filled intermediate band, extending the absorption spectrum of the cell. However, issues in the IBSC, such as the strain around multi-stacking QDs, low thermal excitation energy, and short carrier lifetime, lead to its low conversion efficiency. In recent years, many efforts have been made from different aspects. In this paper, we focus on In(Ga)As QD-IBSC, list the experimental technologies used to improve the performance of the cell and review the recent research progress. By analyzing the effects of different technologies on conversion efficiency, the development direction of the In(Ga)As QD-IBSC in the future is proposed.

量子点中间带太阳能电池(QD-IBSC)在理论上具有很高的效率。它可以通过半填充的中间带吸收能量低于半导体带隙的光子,延长了电池的吸收光谱。然而,IBSC存在的问题,如多层量子点周围的应变、热激发能低、载流子寿命短等,导致其转换效率较低。近年来,从不同方面做出了许多努力。本文重点介绍了In(Ga)As QD-IBSC,列举了用于提高电池性能的实验技术,并对最近的研究进展进行了综述。通过分析不同技术对转换效率的影响,提出了In(Ga)As QD-IBSC未来的发展方向。
{"title":"Performance optimization of In(Ga)As quantum dot intermediate band solar cells","authors":"Guiqiang Yang,&nbsp;Wen Liu,&nbsp;Yidi Bao,&nbsp;Xiaoling Chen,&nbsp;Chunxue Ji,&nbsp;Bo Wei,&nbsp;Fuhua Yang,&nbsp;Xiaodong Wang","doi":"10.1186/s11671-023-03839-z","DOIUrl":"10.1186/s11671-023-03839-z","url":null,"abstract":"<div><p>Quantum dot intermediate band solar cell (QD-IBSC) has high efficiency theoretically. It can absorb photons with energy lower than the bandgap of the semiconductor through the half-filled intermediate band, extending the absorption spectrum of the cell. However, issues in the IBSC, such as the strain around multi-stacking QDs, low thermal excitation energy, and short carrier lifetime, lead to its low conversion efficiency. In recent years, many efforts have been made from different aspects. In this paper, we focus on In(Ga)As QD-IBSC, list the experimental technologies used to improve the performance of the cell and review the recent research progress. By analyzing the effects of different technologies on conversion efficiency, the development direction of the In(Ga)As QD-IBSC in the future is proposed.</p></div>","PeriodicalId":715,"journal":{"name":"Nanoscale Research Letters","volume":"18 1","pages":""},"PeriodicalIF":4.703,"publicationDate":"2023-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1186/s11671-023-03839-z.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"4780419","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Efficient adsorption of aromatic and aliphatic hydrocarbons by electrospun hydrophobic PTFE-NiO composite nanofiber filter mats 静电纺疏水PTFE-NiO复合纳米纤维滤垫对芳香烃和脂肪族烃的高效吸附
IF 4.703 3区 材料科学 Pub Date : 2023-04-20 DOI: 10.1186/s11671-023-03834-4
Syeda Irsa Mazhar, Attarad Ali, Trevor B. Tilly, Muhammad Hassaan Khan, Chang-Yu Wu

Aromatic and aliphatic hydrocarbons (AAHs) are comprised of a variety of gaseous chemicals that may affect human and environmental health. To remove AAHs from air, polytetrafluoroethylene-nickel oxide (PTFE-NiO) composite nanofiber filter mats (NFMs) were synthesized and characterized for their ability to effectively adsorb AAHs. The NiO-nanoparticle-doped mats were fabricated by green electrospinning of PTFE and polyvinyl alcohol (PVA) mixtures added with nickel (II) nitrate hexahydrate in the spinning solution followed by surface heat treatment. FE-SEM FTIR, Raman spectroscopy, sessile drop and Jar methods were applied as characterization techniques. The diameter of the electrospun nanofibers without NiO dopant ranged from 0.34 ± 21.61 to 0.23 ± 10.12 µm, whereas a reduction in diameter of NiO-doped nanofibers was obtained, ranging between pristine to 0.25 ± 24.12 µm and 0.12 ± 85.75 µm with heat treatment. 6% (by weight) NiO-doped PTFE composite NFMs exhibited a high water-contact angle of 120 ± 2.20 degrees; the high hydrophobicity value aided self-cleansing property of NFMs for practical applications. UV adsorption capability for heat-treated PTFE-NiO NFMs was evaluated for three AAHs, and the results showed that 6 wt% NiO adsorbed 1.41, 0.67, and 0.73 µg/mg of toluene, formaldehyde and acetone, respectively. These findings reveal the potential applicability of the prepared filter mats for capturing various AAHs from polluted air.

芳香族和脂肪族碳氢化合物(AAHs)由多种可能影响人类和环境健康的气态化学物质组成。为了去除空气中的AAHs,合成了聚四氟乙烯-氧化镍(PTFE-NiO)复合纳米纤维过滤垫(NFMs),并对其有效吸附AAHs的能力进行了表征。采用绿色静电纺丝的方法,将聚乙烯醇(PVA)和聚四氟乙烯(PTFE)混合,在纺丝液中加入六水合硝酸镍,然后进行表面热处理,制备了纳米掺杂nio纳米颗粒毡。采用了FE-SEM、FTIR、拉曼光谱、固滴法和瓶法等表征技术。未掺杂NiO的电纺丝纳米纤维的直径范围为0.34±21.61 ~ 0.23±10.12µm,而经过热处理的NiO掺杂纳米纤维的直径范围为0.25±24.12µm ~ 0.12±85.75µm。6%(重量计)掺nio - PTFE复合nfm的水接触角达到120±2.20度;高疏水性有助于nfm在实际应用中的自清洁性能。对热处理后的PTFE-NiO nfm对3种AAHs的紫外吸附性能进行了评价,结果表明,6 wt% NiO对甲苯、甲醛和丙酮的吸附量分别为1.41、0.67和0.73µg/mg。这些发现揭示了所制备的过滤垫从污染空气中捕获各种AAHs的潜在适用性。
{"title":"Efficient adsorption of aromatic and aliphatic hydrocarbons by electrospun hydrophobic PTFE-NiO composite nanofiber filter mats","authors":"Syeda Irsa Mazhar,&nbsp;Attarad Ali,&nbsp;Trevor B. Tilly,&nbsp;Muhammad Hassaan Khan,&nbsp;Chang-Yu Wu","doi":"10.1186/s11671-023-03834-4","DOIUrl":"10.1186/s11671-023-03834-4","url":null,"abstract":"<div><p>Aromatic and aliphatic hydrocarbons (AAHs) are comprised of a variety of gaseous chemicals that may affect human and environmental health. To remove AAHs from air, polytetrafluoroethylene-nickel oxide (PTFE-NiO) composite nanofiber filter mats (NFMs) were synthesized and characterized for their ability to effectively adsorb AAHs. The NiO-nanoparticle-doped mats were fabricated by green electrospinning of PTFE and polyvinyl alcohol (PVA) mixtures added with nickel (II) nitrate hexahydrate in the spinning solution followed by surface heat treatment. FE-SEM FTIR, Raman spectroscopy, sessile drop and Jar methods were applied as characterization techniques. The diameter of the electrospun nanofibers without NiO dopant ranged from 0.34 ± 21.61 to 0.23 ± 10.12 µm, whereas a reduction in diameter of NiO-doped nanofibers was obtained, ranging between pristine to 0.25 ± 24.12 µm and 0.12 ± 85.75 µm with heat treatment. 6% (by weight) NiO-doped PTFE composite NFMs exhibited a high water-contact angle of 120 ± 2.20 degrees; the high hydrophobicity value aided self-cleansing property of NFMs for practical applications. UV adsorption capability for heat-treated PTFE-NiO NFMs was evaluated for three AAHs, and the results showed that 6 wt% NiO adsorbed 1.41, 0.67, and 0.73 µg/mg of toluene, formaldehyde and acetone, respectively. These findings reveal the potential applicability of the prepared filter mats for capturing various AAHs from polluted air.\u0000</p></div>","PeriodicalId":715,"journal":{"name":"Nanoscale Research Letters","volume":"18 1","pages":""},"PeriodicalIF":4.703,"publicationDate":"2023-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1186/s11671-023-03834-4.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"4776107","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
期刊
Nanoscale Research Letters
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