Pub Date : 2025-01-28DOI: 10.1140/epjb/s10051-025-00871-z
Longtao Deng, Linfeng He, Xinyao Chen, Jin Cheng, Chunqian Zhang, Zhenjun Li, Junming Li
Tin-based perovskite represents a highly promising alternative to lead-based perovskite, offering a number of significant advantages. These include non-toxicity, high absorbance, and excellent photovoltaic properties. The use of the toxic anti-solvent chlorobenzene (CBZ) in the preparation of tin-based perovskite thin films has the dual disadvantage of increasing the environmental hazards and the cost of subsequent treatment. The use of acetic acid (HAc) as a green anti-solvent has been demonstrated to effectively regulate the crystallization process of tin-based perovskite FASnI3, resulting in the preparation of perovskite films of superior quality. To further enhance the performance of tin-based perovskite, Zhao et al., organic cation mixing was used to add MAI to the FASnI3 system and optimize the ratio, resulting in an optimal ratio of FA (0.75) MA (0.25) (FA = NH2CH = NH2+, MA = CH3NH3+) (Zhao et al. Adv Sci 4(11):1700204, 2024). In this study, we choose the crystallization process during the preparation of binary FA0.75MA0.25SnI3 perovskite using a green anti-solvent HAc. The findings demonstrated that HAc was capable of influencing the crystallization of binary tin-based perovskite, facilitating the formation of perovskite films with minimal pinholes and enhanced uniformity and crystallinity. Additionally, the resulting perovskite exhibits a band gap of 1.35 eV, which is in close alignment with the predicted ideal band gap as postulated by Schottky's theory. Furthermore, it displays enhanced hydrophobic properties. In the binary perovskite photovoltaic device prepared using the anti-solvent HAc, the maximum device efficiency reached 3.62%. The findings of this study will contribute to the understanding of the crystallization process of diverse perovskite materials in the presence of a green anti-solvent.
Graphical Abstract
{"title":"Green anti-solvent modulation of the growth of binary FAXMA1-X tin-based perovskite and their photovoltaic properties","authors":"Longtao Deng, Linfeng He, Xinyao Chen, Jin Cheng, Chunqian Zhang, Zhenjun Li, Junming Li","doi":"10.1140/epjb/s10051-025-00871-z","DOIUrl":"10.1140/epjb/s10051-025-00871-z","url":null,"abstract":"<div><p>Tin-based perovskite represents a highly promising alternative to lead-based perovskite, offering a number of significant advantages. These include non-toxicity, high absorbance, and excellent photovoltaic properties. The use of the toxic anti-solvent chlorobenzene (CBZ) in the preparation of tin-based perovskite thin films has the dual disadvantage of increasing the environmental hazards and the cost of subsequent treatment. The use of acetic acid (HAc) as a green anti-solvent has been demonstrated to effectively regulate the crystallization process of tin-based perovskite FASnI<sub>3</sub>, resulting in the preparation of perovskite films of superior quality. To further enhance the performance of tin-based perovskite, Zhao et al., organic cation mixing was used to add MAI to the FASnI<sub>3</sub> system and optimize the ratio, resulting in an optimal ratio of FA (0.75) MA (0.25) (FA = NH<sub>2</sub>CH = NH<sub>2</sub><sup>+</sup>, MA = CH<sub>3</sub>NH<sub>3</sub><sup>+</sup>) (Zhao et al. Adv Sci 4(11):1700204, 2024). In this study, we choose the crystallization process during the preparation of binary FA<sub>0.75</sub>MA<sub>0.25</sub>SnI<sub>3</sub> perovskite using a green anti-solvent HAc. The findings demonstrated that HAc was capable of influencing the crystallization of binary tin-based perovskite, facilitating the formation of perovskite films with minimal pinholes and enhanced uniformity and crystallinity. Additionally, the resulting perovskite exhibits a band gap of 1.35 eV, which is in close alignment with the predicted ideal band gap as postulated by Schottky's theory. Furthermore, it displays enhanced hydrophobic properties. In the binary perovskite photovoltaic device prepared using the anti-solvent HAc, the maximum device efficiency reached 3.62%. The findings of this study will contribute to the understanding of the crystallization process of diverse perovskite materials in the presence of a green anti-solvent.</p><h3>Graphical Abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":787,"journal":{"name":"The European Physical Journal B","volume":"98 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2025-01-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143109621","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Numerous silicon carbide (SiC) polymorphs are wide-bandgap (BG) and low carrier concentration semiconductors, which have been extensively applied in high-temperature, frequency, power, and voltage electronic and optoelectronic devices. Comprehensively understanding the electronic structure of SiC is of practical significance and an indispensable necessity. In this work, the first-principles calculation based on density functional theory is applied to probe the electronic structures of polymorphs (2 H-, 3C-, 4 H-, and 6 H-) SiC under compressive and tensile strains ((epsilon )). The mechanical properties of 2 H-, 4 H-, and 6 H-SiC exhibit very analogous characteristics: the BGs shrinking with the compressive strain rising; it increasing initially following by decreasing when stretch applied along the [100]-direction. If stretching along the [001]-direction, however, the BGs of 2 H-SiC shows a maximum value at (epsilon =0.03). The BGs of 4 H-SiC and 6 H-SiC diminish if amplify tensile strain along the [001]-direction. In the case of 3C-SiC, the BGs shrinkages along with the compressing strain intensifying and vanishes finally at (epsilon =0.1) in the [001] and [110]-directions, and in both [001] and [110]-directions the evolution is almost identical and changing linearly. In contrast, the BGs decreases much faster along the [110]-direction compared to the [001]-direction under tensile strain, that disappearing as (epsilon =0.12) in the [110]-direction and (epsilon =0.29) in the [001]-direction. We discuss in detail the mechanical properties and electronic structures evolutions under the strain of 2 H-, 4 H-, 3C-, and 6 H-SiC and expose that have the gigantic potential for practical and research value in valleytronics.
{"title":"First-principles study of the electronic structure of 2 H-, 3C-, 4 H-, and 6 H-silicon carbide under strain","authors":"Shuchao Zhang, Changhai Shi, Bangzhao Wang, Zichen Zhang","doi":"10.1140/epjb/s10051-025-00863-z","DOIUrl":"10.1140/epjb/s10051-025-00863-z","url":null,"abstract":"<p>Numerous silicon carbide (SiC) polymorphs are wide-bandgap (BG) and low carrier concentration semiconductors, which have been extensively applied in high-temperature, frequency, power, and voltage electronic and optoelectronic devices. Comprehensively understanding the electronic structure of SiC is of practical significance and an indispensable necessity. In this work, the first-principles calculation based on density functional theory is applied to probe the electronic structures of polymorphs (2 H-, 3C-, 4 H-, and 6 H-) SiC under compressive and tensile strains (<span>(epsilon )</span>). The mechanical properties of 2 H-, 4 H-, and 6 H-SiC exhibit very analogous characteristics: the BGs shrinking with the compressive strain rising; it increasing initially following by decreasing when stretch applied along the [100]-direction. If stretching along the [001]-direction, however, the BGs of 2 H-SiC shows a maximum value at <span>(epsilon =0.03)</span>. The BGs of 4 H-SiC and 6 H-SiC diminish if amplify tensile strain along the [001]-direction. In the case of 3C-SiC, the BGs shrinkages along with the compressing strain intensifying and vanishes finally at <span>(epsilon =0.1)</span> in the [001] and [110]-directions, and in both [001] and [110]-directions the evolution is almost identical and changing linearly. In contrast, the BGs decreases much faster along the [110]-direction compared to the [001]-direction under tensile strain, that disappearing as <span>(epsilon =0.12)</span> in the [110]-direction and <span>(epsilon =0.29)</span> in the [001]-direction. We discuss in detail the mechanical properties and electronic structures evolutions under the strain of 2 H-, 4 H-, 3C-, and 6 H-SiC and expose that have the gigantic potential for practical and research value in valleytronics.</p>","PeriodicalId":787,"journal":{"name":"The European Physical Journal B","volume":"98 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2025-01-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143109767","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-01-24DOI: 10.1140/epjb/s10051-025-00861-1
Dilruba Khanam, Asif Iqbal, Badiur Rahaman
This paper presents a comparative study of low-dimensional spin (frac{1}{2}) compounds, CuInO((hbox {PO}_{4})) and CuInO((hbox {VO}_{4})), utilizing first-principles density functional theory within the generalized gradient approximation for exchange-correlation functionals. The primary objective is to investigate the electronic and magnetic properties of these compounds, emphasizing the superexchange interactions between the magnetic ions and deriving the underlying spin models. The dominant magnetic interaction J1 = 9.89 meV which is antiferromagnetic for CuInO((hbox {PO}_{4})) whereas J1 = 22.8 meV and J2 = 7.7 meV which are also antiferromagnetic in nature for CuInO((hbox {VO}_{4})). This analysis reveals distinct magnetic structures i.e CuInO((hbox {PO}_{4})) features an interacting spin (frac{1}{2}) antiferromagnetic chain, while CuInO((hbox {VO}_{4})) exhibits an interacting spin (frac{1}{2}) antiferromagnetic tetramer. The magnetic behavior of both materials is primarily governed by dominant antiferromagnetic interactions J1 though the presence of sizable interactions J2 and J4 in the CuInO((hbox {VO}_{4})) compound make the difference in the magnetic structure. The obtained results contribute to a deeper understanding of these materials’ microscopic properties.
{"title":"Theoretical investigation of electronic and magnetic properties in low-dimensional spin (frac{1}{2}) compounds: (hbox {CuInO}(hbox {XO}_{4})) (X = P, V)","authors":"Dilruba Khanam, Asif Iqbal, Badiur Rahaman","doi":"10.1140/epjb/s10051-025-00861-1","DOIUrl":"10.1140/epjb/s10051-025-00861-1","url":null,"abstract":"<div><p>This paper presents a comparative study of low-dimensional spin <span>(frac{1}{2})</span> compounds, CuInO<span>((hbox {PO}_{4}))</span> and CuInO<span>((hbox {VO}_{4}))</span>, utilizing first-principles density functional theory within the generalized gradient approximation for exchange-correlation functionals. The primary objective is to investigate the electronic and magnetic properties of these compounds, emphasizing the superexchange interactions between the magnetic ions and deriving the underlying spin models. The dominant magnetic interaction J1 = 9.89 meV which is antiferromagnetic for CuInO<span>((hbox {PO}_{4}))</span> whereas J1 = 22.8 meV and J2 = 7.7 meV which are also antiferromagnetic in nature for CuInO<span>((hbox {VO}_{4}))</span>. This analysis reveals distinct magnetic structures i.e CuInO<span>((hbox {PO}_{4}))</span> features an interacting spin <span>(frac{1}{2})</span> antiferromagnetic chain, while CuInO<span>((hbox {VO}_{4}))</span> exhibits an interacting spin <span>(frac{1}{2})</span> antiferromagnetic tetramer. The magnetic behavior of both materials is primarily governed by dominant antiferromagnetic interactions J1 though the presence of sizable interactions J2 and J4 in the CuInO<span>((hbox {VO}_{4}))</span> compound make the difference in the magnetic structure. The obtained results contribute to a deeper understanding of these materials’ microscopic properties.</p></div>","PeriodicalId":787,"journal":{"name":"The European Physical Journal B","volume":"98 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2025-01-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143109375","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-01-24DOI: 10.1140/epjb/s10051-024-00860-8
Ya-Ping Li, Ying-Jie Chen, Meng-Meng Zheng
In recent years, two-dimensional (2D) superconducting materials have garnered significant interest due to their unique properties and potential applications. Here, we conducted thermodynamic and dynamic stability studies on 51 metal-intercalated hexagonal boron carbon (h-BC) compounds, and ultimately identified 22 stable compounds. Among these 22 compounds, 18 materials are metals, while the remaining 4 materials include 1 semiconductor ((hbox {MgB}_{2}hbox {C}_{2})) and 3 semimetals ((hbox {TiB}_{2}hbox {C}_{2}), (hbox {ZrB}_{2}hbox {C}_{2}), and (hbox {HfB}_{2}hbox {C}_{2})). The possible superconductivity of eighteen metals is studied by solving the Allen–Dynes modified McMillan equation to estimate their superconducting transition temperature ((T_{c})). The highest (T_{c}) is observed in (hbox {KB}_{2}hbox {C}_{2}) ((T_{c}) = 53.47 K), followed by (hbox {NaB}_{2}hbox {C}_{2}) ((T_{c}) = 48.30 K), while the lowest (T_{c}) is in (hbox {AlB}_{2}hbox {C}_{2}) ((T_{c}) = 0.04 K). Due to the high (T_{c}) of alkali metal intercalation compounds, this work mainly focuses on them. For alkali metal intercalation compounds, we found that the (T_{c}) rises with the increase of the main group atomic number, mainly due to the degree of metalization of the (sigma )-bonding band at the Fermi level. Another important reason is the softening of the phonon spectrum. These findings enrich the family of 2D superconductors, providing new theoretical insights for experimental synthesis and opening research ideas for 2D superconducting electronic devices.
{"title":"Theoretical study on superconductivity of metal-intercalated boron carbon compounds","authors":"Ya-Ping Li, Ying-Jie Chen, Meng-Meng Zheng","doi":"10.1140/epjb/s10051-024-00860-8","DOIUrl":"10.1140/epjb/s10051-024-00860-8","url":null,"abstract":"<p>In recent years, two-dimensional (2D) superconducting materials have garnered significant interest due to their unique properties and potential applications. Here, we conducted thermodynamic and dynamic stability studies on 51 metal-intercalated hexagonal boron carbon (<i>h</i>-BC) compounds, and ultimately identified 22 stable compounds. Among these 22 compounds, 18 materials are metals, while the remaining 4 materials include 1 semiconductor (<span>(hbox {MgB}_{2}hbox {C}_{2})</span>) and 3 semimetals (<span>(hbox {TiB}_{2}hbox {C}_{2})</span>, <span>(hbox {ZrB}_{2}hbox {C}_{2})</span>, and <span>(hbox {HfB}_{2}hbox {C}_{2})</span>). The possible superconductivity of eighteen metals is studied by solving the Allen–Dynes modified McMillan equation to estimate their superconducting transition temperature (<span>(T_{c})</span>). The highest <span>(T_{c})</span> is observed in <span>(hbox {KB}_{2}hbox {C}_{2})</span> (<span>(T_{c})</span> = 53.47 K), followed by <span>(hbox {NaB}_{2}hbox {C}_{2})</span> (<span>(T_{c})</span> = 48.30 K), while the lowest <span>(T_{c})</span> is in <span>(hbox {AlB}_{2}hbox {C}_{2})</span> (<span>(T_{c})</span> = 0.04 K). Due to the high <span>(T_{c})</span> of alkali metal intercalation compounds, this work mainly focuses on them. For alkali metal intercalation compounds, we found that the <span>(T_{c})</span> rises with the increase of the main group atomic number, mainly due to the degree of metalization of the <span>(sigma )</span>-bonding band at the Fermi level. Another important reason is the softening of the phonon spectrum. These findings enrich the family of 2D superconductors, providing new theoretical insights for experimental synthesis and opening research ideas for 2D superconducting electronic devices.</p>","PeriodicalId":787,"journal":{"name":"The European Physical Journal B","volume":"98 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2025-01-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143109380","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-01-21DOI: 10.1140/epjb/s10051-024-00855-5
Govind Singh, Dinesh Khattar, Neha Agrawal
This paper offers a unique synchronization strategy for synchronizing eight chaotic systems. The new approach is referred to as dual quadratic compound anti synchronization. We additionally employed signal multi-switching to augment the complexity of the suggested technique. In communication theory, the transmission and security of the resulting signal are more effective because of the numerous combinations of chaotic systems and multiswitching that provide such complicated dynamic behavior. To demonstrate the acquired results, Lorenz, Rössler, Lü, and Chen chaotic system are used. Using the Lyapunov stability principle, sufficient conditions are attained and appropriate controllers are built to achieve the required synchronization between eight chaotic systems. To validate the findings from theory, numerical simulations, and graphics are presented using MATLAB.
{"title":"Dual quadratic compound multiswitching anti-synchronization of Lorenz, Rössler, Lü and Chen chaotic systems","authors":"Govind Singh, Dinesh Khattar, Neha Agrawal","doi":"10.1140/epjb/s10051-024-00855-5","DOIUrl":"10.1140/epjb/s10051-024-00855-5","url":null,"abstract":"<p>This paper offers a unique synchronization strategy for synchronizing eight chaotic systems. The new approach is referred to as dual quadratic compound anti synchronization. We additionally employed signal multi-switching to augment the complexity of the suggested technique. In communication theory, the transmission and security of the resulting signal are more effective because of the numerous combinations of chaotic systems and multiswitching that provide such complicated dynamic behavior. To demonstrate the acquired results, Lorenz, Rössler, Lü, and Chen chaotic system are used. Using the Lyapunov stability principle, sufficient conditions are attained and appropriate controllers are built to achieve the required synchronization between eight chaotic systems. To validate the findings from theory, numerical simulations, and graphics are presented using MATLAB.</p>","PeriodicalId":787,"journal":{"name":"The European Physical Journal B","volume":"98 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2025-01-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142995285","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-01-21DOI: 10.1140/epjb/s10051-024-00857-3
M. R. Laouyenne, Mohamed Baazaoui, Fatma Aouaini, Beriham Basha, KholoudSaad Al-mugren
This research aimed to investigate the magnetic and dielectric phenomena of the La0.8Na0.2Mn0.97Fe0.03O3 sol–gel compound. Through the magnetic analysis of M (μ0H, T), we observed that the compound undergoes a ferromagnetic–paramagnetic phase transition. A perfect coincidence was observed between the magnetic entropy changes calculated using the Maxwell relation and Landau theory only in the high-temperature range. Furthermore, based on the mean field theory, we calculate the number of spins (S = 3) and the saturation magnetization (Msat = 87emu/g). With these parameters, we computed – ΔSM at different applied magnetic fields. We have observed an appreciable coincidence between -ΔSM calculated using the Maxwell relation and mean field model, confirming the validity of this technique. This suggests that the phase transition of our compound is completely described by the mean field model. Moving forward, we planned to continue investigating of the compound in our study by the critical phenomena. We calculated the critical exponent values using different approaches, such as Kouvel–Fisher, Modified Arrott plot, and critical isotherm technique. The Banerjee approach confirmed that the phase transition is of second order. We determined that the mean field model is the best description for the transition of La0.8Na0.2Mn0.97Fe0.03O3. The determined values are β = 0.43, γ = 1.09 and δ = 3.57. Finally, the total conductivity plots for the sample were established by Jonscher power law. The effect of frequency, temperature on the constant dielectric (ε") and the dielectric loss (tan δ) has been deliberated in terms of hopping of the charge carriers between Mn3+ and Mn4+ ions. Activation energy has been calculated from both temperature dependence of the continuous conductivity and the relaxation time values that confirm that same kinds of charge carriers are governing both the processes. Nyquist plot of the impedance displays semicircle arcs and the electrical equivalent circuit of the type of RG + (RGB//CPE) has been proposed to explain the impedance results.
{"title":"Magnetic and dielectric studies of the La0.8Na0.2Mn0.97Fe0.03O3 sol–gel compound","authors":"M. R. Laouyenne, Mohamed Baazaoui, Fatma Aouaini, Beriham Basha, KholoudSaad Al-mugren","doi":"10.1140/epjb/s10051-024-00857-3","DOIUrl":"10.1140/epjb/s10051-024-00857-3","url":null,"abstract":"<div><p>This research aimed to investigate the magnetic and dielectric phenomena of the La<sub>0.8</sub>Na<sub>0.2</sub>Mn<sub>0.97</sub>Fe<sub>0.03</sub>O<sub>3</sub> sol–gel compound. Through the magnetic analysis of <i>M</i> (<i>μ</i><sub>0</sub><i>H</i>, <i>T</i>), we observed that the compound undergoes a ferromagnetic–paramagnetic phase transition. A perfect coincidence was observed between the magnetic entropy changes calculated using the Maxwell relation and Landau theory only in the high-temperature range. Furthermore, based on the mean field theory, we calculate the number of spins (<i>S</i> = 3) and the saturation magnetization (<i>M</i><sub>sat</sub> = 87emu/g). With these parameters, we computed – Δ<i>S</i><sub>M</sub> at different applied magnetic fields. We have observed an appreciable coincidence between -ΔSM calculated using the Maxwell relation and mean field model, confirming the validity of this technique. This suggests that the phase transition of our compound is completely described by the mean field model. Moving forward, we planned to continue investigating of the compound in our study by the critical phenomena. We calculated the critical exponent values using different approaches, such as Kouvel–Fisher, Modified Arrott plot, and critical isotherm technique. The Banerjee approach confirmed that the phase transition is of second order. We determined that the mean field model is the best description for the transition of La<sub>0.8</sub>Na<sub>0.2</sub>Mn<sub>0.97</sub>Fe<sub>0.03</sub>O<sub>3</sub>. The determined values are <i>β</i> = 0.43, <i>γ</i> = 1.09 and <i>δ</i> = 3.57. Finally, the total conductivity plots for the sample were established by Jonscher power law. The effect of frequency, temperature on the constant dielectric (<i>ε</i>\") and the dielectric loss (tan <i>δ</i>) has been deliberated in terms of hopping of the charge carriers between Mn<sup>3+</sup> and Mn<sup>4+</sup> ions. Activation energy has been calculated from both temperature dependence of the continuous conductivity and the relaxation time values that confirm that same kinds of charge carriers are governing both the processes. Nyquist plot of the impedance displays semicircle arcs and the electrical equivalent circuit of the type of RG + (RGB//CPE) has been proposed to explain the impedance results.</p><h3>Graphical abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":787,"journal":{"name":"The European Physical Journal B","volume":"98 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2025-01-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142995747","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-01-20DOI: 10.1140/epjb/s10051-024-00848-4
Deepak Sharma, Matthias Renz, Philipp Hövel
Motif discovery is a powerful and insightful method to quantify network structures and explore their function. As a case study, we present a comprehensive analysis of regulatory motifs in the connectome of the model organism Caenorhabditis elegans (C. elegans). Leveraging the Efficient Subgraph Counting Algorithmic PackagE (ESCAPE) algorithm, we identify network motifs in the multi-layer nervous system of C. elegans and link them to functional circuits. We further investigate motif enrichment within signal pathways and benchmark our findings with random networks of similar size and link density. Our findings provide valuable insights into the organization of the nerve net of this well-documented organism and can be easily transferred to other species and disciplines alike.
{"title":"Discovering motifs to fingerprint multi-layer networks: a case study on the connectome of C. Elegans","authors":"Deepak Sharma, Matthias Renz, Philipp Hövel","doi":"10.1140/epjb/s10051-024-00848-4","DOIUrl":"10.1140/epjb/s10051-024-00848-4","url":null,"abstract":"<p>Motif discovery is a powerful and insightful method to quantify network structures and explore their function. As a case study, we present a comprehensive analysis of regulatory motifs in the connectome of the model organism <i>Caenorhabditis elegans</i> (<i>C. elegans</i>). Leveraging the Efficient Subgraph Counting Algorithmic PackagE (ESCAPE) algorithm, we identify network motifs in the multi-layer nervous system of <i>C. elegans</i> and link them to functional circuits. We further investigate motif enrichment within signal pathways and benchmark our findings with random networks of similar size and link density. Our findings provide valuable insights into the organization of the nerve net of this well-documented organism and can be easily transferred to other species and disciplines alike.</p>","PeriodicalId":787,"journal":{"name":"The European Physical Journal B","volume":"98 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2025-01-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1140/epjb/s10051-024-00848-4.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142994922","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-01-18DOI: 10.1140/epjb/s10051-024-00852-8
Kh. Lotfy, Ibrahim S. Elshazly, Borhen Halouani, Saurav Sharma, Eslam S. Elidy
This study examines the interactions of piezoelectric, photothermal, and thermoelastic wave phenomena in orthotropic semiconductors subjected to thermal regulation via water. This study presents a model for coupling heat and moisture transport alongside photo-hydroelectricity. mechanical deformation induces the piezoelectric effect, initiating carrier density (plasma) waves by generating a polarization charge. At present, photothermal effects, caused by light absorption, facilitate the formation and propagation of plasma waves. The interplay of moisture and temperature under hygrothermal circumstances adds complexity to material behavior, affecting the formation and propagation of plasma waves. The normal mode technique produces analytical formulations for the transient response of temperature variation, moisture distribution, plasma, displacement, and stress components during continuous heat and moisture flow at the semiconductor surface. The research employs advanced mathematical techniques and computational simulations to demonstrate the influence of piezoelectricity, photothermal, and hygrothermal on primary physical field wave propagation. The numerical data is employed to graphically represent and calculate the hygrothermal fields and stress response in photo-hygrothermoelastic materials, including fluctuations in moisture content and time.
{"title":"Piezo-photothermal wave dynamics in an orthotropic hygrothermal semiconductor exposed to heat and moisture flux","authors":"Kh. Lotfy, Ibrahim S. Elshazly, Borhen Halouani, Saurav Sharma, Eslam S. Elidy","doi":"10.1140/epjb/s10051-024-00852-8","DOIUrl":"10.1140/epjb/s10051-024-00852-8","url":null,"abstract":"<div><p>This study examines the interactions of piezoelectric, photothermal, and thermoelastic wave phenomena in orthotropic semiconductors subjected to thermal regulation via water. This study presents a model for coupling heat and moisture transport alongside photo-hydroelectricity. mechanical deformation induces the piezoelectric effect, initiating carrier density (plasma) waves by generating a polarization charge. At present, photothermal effects, caused by light absorption, facilitate the formation and propagation of plasma waves. The interplay of moisture and temperature under hygrothermal circumstances adds complexity to material behavior, affecting the formation and propagation of plasma waves. The normal mode technique produces analytical formulations for the transient response of temperature variation, moisture distribution, plasma, displacement, and stress components during continuous heat and moisture flow at the semiconductor surface. The research employs advanced mathematical techniques and computational simulations to demonstrate the influence of piezoelectricity, photothermal, and hygrothermal on primary physical field wave propagation. The numerical data is employed to graphically represent and calculate the hygrothermal fields and stress response in photo-hygrothermoelastic materials, including fluctuations in moisture content and time.</p><h3>Graphical abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":787,"journal":{"name":"The European Physical Journal B","volume":"98 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2025-01-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142995489","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-01-16DOI: 10.1140/epjb/s10051-024-00856-4
M. Junaid Iqbal Khan, Asif Rasheed, Asifa Iqbal, Javed Ahmad, Zarfishan Kanwal, Imran Taj, Nauman Usmani, Masood Yousaf, Hamid Ullah
Current research enumerates a density functional theory (DFT) study of Al/Ga/In-doped HfO2 using the Wien2k code. Spin-polarized calculations illustrate the non-magnetic behavior of HfO2, whereas evidence of magnetism is found in Al-, Ga-, and In-doped HfO2. Al@HfO2 contains a higher magnetic moment of 3.13 ({mu }_{text{B}}), while the least value (2.58 ({mu }_{text{B}})) is noticed for In@HfO2 material. The prominent role of Al 3p-, Ga 3d-, and In 4d-states is observed around the Fermi level and helps in improving the electronic properties of proposed materials. Band gap of selected materials is reduced and shows material’s ability for good conduction. Absorption spectra of Al@HfO2 and Ga@HfO2 materials exhibit blueshift, but In@HfO2 shows redshift when compared with pure HfO2. These materials may have applications in future solar, optoelectronics, energy harvesting, and spintronic devices due to enhanced absorption and conductivity along with decreased reflectivity in the UV region.
{"title":"Investigations on structural, electronic, magnetic, and optical response of HfXO2 (X = Al/Ga/In) novel materials for optoelectronic applications","authors":"M. Junaid Iqbal Khan, Asif Rasheed, Asifa Iqbal, Javed Ahmad, Zarfishan Kanwal, Imran Taj, Nauman Usmani, Masood Yousaf, Hamid Ullah","doi":"10.1140/epjb/s10051-024-00856-4","DOIUrl":"10.1140/epjb/s10051-024-00856-4","url":null,"abstract":"<div><p>Current research enumerates a density functional theory (DFT) study of Al/Ga/In-doped HfO<sub>2</sub> using the Wien2k code. Spin-polarized calculations illustrate the non-magnetic behavior of HfO<sub>2</sub>, whereas evidence of magnetism is found in Al-, Ga-, and In-doped HfO<sub>2</sub>. Al@HfO<sub>2</sub> contains a higher magnetic moment of 3.13 <span>({mu }_{text{B}})</span>, while the least value (2.58 <span>({mu }_{text{B}})</span>) is noticed for In@HfO<sub>2</sub> material. The prominent role of Al 3<i>p</i>-, Ga 3<i>d</i>-, and In 4<i>d</i>-states is observed around the Fermi level and helps in improving the electronic properties of proposed materials. Band gap of selected materials is reduced and shows material’s ability for good conduction. Absorption spectra of Al@HfO<sub>2</sub> and Ga@HfO<sub>2</sub> materials exhibit blueshift, but In@HfO<sub>2</sub> shows redshift when compared with pure HfO<sub>2</sub>. These materials may have applications in future solar, optoelectronics, energy harvesting, and spintronic devices due to enhanced absorption and conductivity along with decreased reflectivity in the UV region.</p><h3>Graphical abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":787,"journal":{"name":"The European Physical Journal B","volume":"98 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2025-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142995196","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-01-15DOI: 10.1140/epjb/s10051-024-00851-9
Elena Landrò, Vladimir M. Fomin, Alessio Zaccone
Quantum rings have emerged as a playground for quantum mechanics and topological physics, with promising technological applications. Experimentally realizable quantum rings, albeit at the scale of a few nanometers, are 3D nanostructures. Surprisingly, no theories exist for the topology of the Fermi sea of quantum rings, and a microscopic theory of superconductivity in nanorings is also missing. In this paper, we remedy this situation by developing a mathematical model for the topology of the Fermi sea and Fermi surface, which features non-trivial hole pockets of electronic states forbidden by quantum confinement, as a function of the geometric parameters of the nanoring. The exactly solvable mathematical model features two topological transitions in the Fermi surface upon shrinking the nanoring size either, first, vertically (along its axis of revolution) and, then, in the plane orthogonal to it, or the other way round. These two topological transitions are reflected in a kink and in a characteristic discontinuity, respectively, in the electronic density of states (DOS) of the quantum ring, which is also computed. Also, closed-form expressions for the Fermi energy as a function of the geometric parameters of the ring are provided. These, along with the DOS, are then used to derive BCS equations for the superconducting critical temperature of nanorings as a function of the geometric parameters of the ring. The (T_c) varies non-monotonically with the dominant confinement size and exhibits a prominent maximum, whereas it is a monotonically increasing function of the other, non-dominant, length scale. For the special case of a perfect square toroid (where the two length scales coincide), the (T_c) increases monotonically with increasing the confinement size, and in this case, there is just one topological transition.
{"title":"Topological Bardeen–Cooper–Schrieffer theory of superconducting quantum rings","authors":"Elena Landrò, Vladimir M. Fomin, Alessio Zaccone","doi":"10.1140/epjb/s10051-024-00851-9","DOIUrl":"10.1140/epjb/s10051-024-00851-9","url":null,"abstract":"<p>Quantum rings have emerged as a playground for quantum mechanics and topological physics, with promising technological applications. Experimentally realizable quantum rings, albeit at the scale of a few nanometers, are 3D nanostructures. Surprisingly, no theories exist for the topology of the Fermi sea of quantum rings, and a microscopic theory of superconductivity in nanorings is also missing. In this paper, we remedy this situation by developing a mathematical model for the topology of the Fermi sea and Fermi surface, which features non-trivial hole pockets of electronic states forbidden by quantum confinement, as a function of the geometric parameters of the nanoring. The exactly solvable mathematical model features two topological transitions in the Fermi surface upon shrinking the nanoring size either, first, vertically (along its axis of revolution) and, then, in the plane orthogonal to it, or the other way round. These two topological transitions are reflected in a kink and in a characteristic discontinuity, respectively, in the electronic density of states (DOS) of the quantum ring, which is also computed. Also, closed-form expressions for the Fermi energy as a function of the geometric parameters of the ring are provided. These, along with the DOS, are then used to derive BCS equations for the superconducting critical temperature of nanorings as a function of the geometric parameters of the ring. The <span>(T_c)</span> varies non-monotonically with the dominant confinement size and exhibits a prominent maximum, whereas it is a monotonically increasing function of the other, non-dominant, length scale. For the special case of a perfect square toroid (where the two length scales coincide), the <span>(T_c)</span> increases monotonically with increasing the confinement size, and in this case, there is just one topological transition.</p>","PeriodicalId":787,"journal":{"name":"The European Physical Journal B","volume":"98 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2025-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1140/epjb/s10051-024-00851-9.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142994713","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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