Pub Date : 2020-12-01DOI: 10.1103/PhysRevB.103.195441
J. Sheehan, David Andersson, A. S. de Wijn
We study the thermal effects on the frictional properties of atomically thin sheets. We simulate a simple model based on the Prandtl-Tomlinson model that reproduces the layer dependence of friction and strengthening effects seen in AFM experiments. We investigate sliding at constant speed as well as reversing direction. We also investigate contact aging: the changes that occur to the contact when the sliding stops completely. We compare the numerical results to analytical calculations based on Kramers rates. We find that there is a slower than exponential contact aging that weakens the contact and that we expect will be observable in experiments. We discuss the implications for sliding as well as aging experiments.
{"title":"Thermal effects and spontaneous frictional relaxation in atomically thin layered materials","authors":"J. Sheehan, David Andersson, A. S. de Wijn","doi":"10.1103/PhysRevB.103.195441","DOIUrl":"https://doi.org/10.1103/PhysRevB.103.195441","url":null,"abstract":"We study the thermal effects on the frictional properties of atomically thin sheets. We simulate a simple model based on the Prandtl-Tomlinson model that reproduces the layer dependence of friction and strengthening effects seen in AFM experiments. We investigate sliding at constant speed as well as reversing direction. We also investigate contact aging: the changes that occur to the contact when the sliding stops completely. We compare the numerical results to analytical calculations based on Kramers rates. We find that there is a slower than exponential contact aging that weakens the contact and that we expect will be observable in experiments. We discuss the implications for sliding as well as aging experiments.","PeriodicalId":8465,"journal":{"name":"arXiv: Mesoscale and Nanoscale Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77921405","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In an easy-plane antiferromagnet with the Dzyaloshinskii-Moriya interaction (DMI), magnons are subject to an effective spin-momentum locking. An in-plane temperature gradient can generate interfacial accumulation of magnons with a specified polarization, realizing the magnon thermal Edelstein effect. We theoretically investigate the injection and detection of this thermally-driven spin polarization in an adjacent heavy metal with strong spin Hall effect. We find that the inverse spin Hall voltage depends monotonically on both temperature and the DMI but non-monotonically on the hard-axis anisotropy. Counterintuitively, the magnon thermal Edelstein effect is an even function of a magnetic field applied along the N'eel vector.
{"title":"Magnon thermal Edelstein effect detected by inverse spin Hall effect","authors":"Hantao Zhang, R. Cheng","doi":"10.1063/5.0030368","DOIUrl":"https://doi.org/10.1063/5.0030368","url":null,"abstract":"In an easy-plane antiferromagnet with the Dzyaloshinskii-Moriya interaction (DMI), magnons are subject to an effective spin-momentum locking. An in-plane temperature gradient can generate interfacial accumulation of magnons with a specified polarization, realizing the magnon thermal Edelstein effect. We theoretically investigate the injection and detection of this thermally-driven spin polarization in an adjacent heavy metal with strong spin Hall effect. We find that the inverse spin Hall voltage depends monotonically on both temperature and the DMI but non-monotonically on the hard-axis anisotropy. Counterintuitively, the magnon thermal Edelstein effect is an even function of a magnetic field applied along the N'eel vector.","PeriodicalId":8465,"journal":{"name":"arXiv: Mesoscale and Nanoscale Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-11-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74995352","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-11-30DOI: 10.1103/PHYSREVB.103.045408
J. A. Crosse, P. Moon
We study the electronic structure of quasicrystals composed of incommensurate stacks of atomic layers. We consider two systems: a pair of square lattices with a relative twist angle of $theta=45^circ$ and a pair of hexagonal lattices with a relative twist angle of $theta=30^circ$, with various interlayer interaction strengths. This constitutes every two-dimensional bilayer quasicrystal system. We investigate the resonant coupling governing the quasicrystalline order in each quasicrystal symmetry, and calculate the quasi-band dispersion. The resonant interaction emerges in bilayer quasicrystals if all the dominant interlayer interactions occur between the atomic orbitals that have the same magnetic quantum number. Thus, not only the quasicrystal composed of the widely studied graphene, but also those composed of transition metal dichalcogenides will exhibit the quasicrystalline states. We find that some quasicrystalline states, which are usually obscured by decoupled monolayer states, are more prominent, i.e., "exposed", in the systems with strong interlayer interaction. We also show that we can switch the states between quasicrystalline configuration and its layer components, by turning on and off the interlayer symmetry.
{"title":"Quasicrystalline electronic states in twisted bilayers and the effects of interlayer and sublattice symmetries","authors":"J. A. Crosse, P. Moon","doi":"10.1103/PHYSREVB.103.045408","DOIUrl":"https://doi.org/10.1103/PHYSREVB.103.045408","url":null,"abstract":"We study the electronic structure of quasicrystals composed of incommensurate stacks of atomic layers. We consider two systems: a pair of square lattices with a relative twist angle of $theta=45^circ$ and a pair of hexagonal lattices with a relative twist angle of $theta=30^circ$, with various interlayer interaction strengths. This constitutes every two-dimensional bilayer quasicrystal system. We investigate the resonant coupling governing the quasicrystalline order in each quasicrystal symmetry, and calculate the quasi-band dispersion. The resonant interaction emerges in bilayer quasicrystals if all the dominant interlayer interactions occur between the atomic orbitals that have the same magnetic quantum number. Thus, not only the quasicrystal composed of the widely studied graphene, but also those composed of transition metal dichalcogenides will exhibit the quasicrystalline states. We find that some quasicrystalline states, which are usually obscured by decoupled monolayer states, are more prominent, i.e., \"exposed\", in the systems with strong interlayer interaction. We also show that we can switch the states between quasicrystalline configuration and its layer components, by turning on and off the interlayer symmetry.","PeriodicalId":8465,"journal":{"name":"arXiv: Mesoscale and Nanoscale Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-11-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91445137","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-11-30DOI: 10.1103/PHYSREVB.103.165301
Josias Langbehn, Sergio Acero González, P. Brouwer, F. von Oppen
Motivated by recent experiments searching for Majorana zero modes in tripartite semiconductor nanowires with epitaxial superconductor and ferromagnetic-insulator layers, we explore the emergence of topological superconductivity in such devices for paradigmatic arrangements of the three constituents. Accounting for the competition between magnetism and superconductivity, we treat superconductivity self consistently and describe the electronic properties, including the superconducting and ferromagnetic proximity effects, within a direct wave-function approach. We conclude that the most viable mechanism for topological superconductivity relies on a superconductor-semiconductor-ferromagnet arrangement of the constituents, in which spin splitting and superconductivity are independently induced in the semiconductor by proximity and superconductivity is only weakly affected by the ferromagnetic insulator.
{"title":"Topological superconductivity in tripartite superconductor-ferromagnet-semiconductor nanowires","authors":"Josias Langbehn, Sergio Acero González, P. Brouwer, F. von Oppen","doi":"10.1103/PHYSREVB.103.165301","DOIUrl":"https://doi.org/10.1103/PHYSREVB.103.165301","url":null,"abstract":"Motivated by recent experiments searching for Majorana zero modes in tripartite semiconductor nanowires with epitaxial superconductor and ferromagnetic-insulator layers, we explore the emergence of topological superconductivity in such devices for paradigmatic arrangements of the three constituents. Accounting for the competition between magnetism and superconductivity, we treat superconductivity self consistently and describe the electronic properties, including the superconducting and ferromagnetic proximity effects, within a direct wave-function approach. We conclude that the most viable mechanism for topological superconductivity relies on a superconductor-semiconductor-ferromagnet arrangement of the constituents, in which spin splitting and superconductivity are independently induced in the semiconductor by proximity and superconductivity is only weakly affected by the ferromagnetic insulator.","PeriodicalId":8465,"journal":{"name":"arXiv: Mesoscale and Nanoscale Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-11-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86245201","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-11-29DOI: 10.1103/PhysRevB.103.195306
P. Alekseev, M. Nestoklon
The spin-orbit interaction of two-dimensional (2D) electrons in semiconductor quantum wells is usually considered to be determined by the band profile of a heterostructure. In the GaAs/AlGaAs type heterosystems, this interaction consists of the isotropic Bychkov-Rashba term, which is absent in symmetric wells, and the anisotropic Dresselhaus term, reflecting the lattice symmetry. It is well-known that the first term can be controlled by electric fields in the growth direction: external or internal, induced by a charge density of 2D electrons. In this work we reveal that the 2D electron charge can substantially affect also the Dresselhaus interaction in symmetric quantum wells. Within the one-band electron Hamiltonian containing, together with the bulk Dresselhaus interaction, the two contributions to the Dresselhaus term from the quantum well interfaces, we show that the internal electric field from the 2D electron charge density can substantially renormalize the anisotropic spin-orbit interaction of 2D electrons. This effect may be important in quantitative studies of spin-dependent phenomena in quantum wells.
{"title":"Electron density effect on spin-orbit interaction in [001] GaAs quantum wells.","authors":"P. Alekseev, M. Nestoklon","doi":"10.1103/PhysRevB.103.195306","DOIUrl":"https://doi.org/10.1103/PhysRevB.103.195306","url":null,"abstract":"The spin-orbit interaction of two-dimensional (2D) electrons in semiconductor quantum wells is usually considered to be determined by the band profile of a heterostructure. In the GaAs/AlGaAs type heterosystems, this interaction consists of the isotropic Bychkov-Rashba term, which is absent in symmetric wells, and the anisotropic Dresselhaus term, reflecting the lattice symmetry. It is well-known that the first term can be controlled by electric fields in the growth direction: external or internal, induced by a charge density of 2D electrons. In this work we reveal that the 2D electron charge can substantially affect also the Dresselhaus interaction in symmetric quantum wells. Within the one-band electron Hamiltonian containing, together with the bulk Dresselhaus interaction, the two contributions to the Dresselhaus term from the quantum well interfaces, we show that the internal electric field from the 2D electron charge density can substantially renormalize the anisotropic spin-orbit interaction of 2D electrons. This effect may be important in quantitative studies of spin-dependent phenomena in quantum wells.","PeriodicalId":8465,"journal":{"name":"arXiv: Mesoscale and Nanoscale Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-11-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86643155","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-11-27DOI: 10.1103/PRXQUANTUM.2.010321
C. Mittag, J. Koski, M. Karalic, C. Thomas, A. Tuaz, A. Hatke, G. Gardner, M. Manfra, J. Danon, T. Ihn, K. Ensslin
Most proof-of-principle experiments for spin qubits have been performed using GaAs-based quantum dots because of the excellent control they offer over tunneling barriers and the orbital and spin degrees of freedom. Here, we present the first realization of high-quality single and double quantum dots hosted in an InAs two-dimensional electron gas (2DEG), demonstrating accurate control down to the few-electron regime, where we observe a clear Kondo effect and singlet-triplet spin blockade. We measure an electronic $g$-factor of $16$ and a typical magnitude of the random hyperfine fields on the dots of $sim 0.6, mathrm{mT}$. We estimate the spin-orbit length in the system to be $sim 5-10, mu mathrm{m}$, which is almost two orders of magnitude longer than typically measured in InAs nanostructures, achieved by a very symmetric design of the quantum well. These favorable properties put the InAs 2DEG on the map as a compelling host for studying fundamental aspects of spin qubits. Furthermore, having weak spin-orbit coupling in a material with a large Rashba coefficient potentially opens up avenues for engineering structures with spin-orbit coupling that can be controlled locally in space and/or time.
大多数自旋量子比特的原理验证实验都是使用基于砷化镓的量子点进行的，因为它们对隧道障碍以及轨道和自旋自由度提供了出色的控制。在这里，我们首次在InAs二维电子气体(2DEG)中实现了高质量的单量子点和双量子点，展示了精确控制到少电子状态，在那里我们观察到清晰的近藤效应和单重态-三重态自旋封锁。我们测量了电子$g$因子$16$和$sim 0.6, mathrm{mT}$点上随机超精细场的典型大小。我们估计系统中的自旋轨道长度为$sim 5-10, mu mathrm{m}$，这比通常在InAs纳米结构中测量的长度几乎长两个数量级，这是通过非常对称的量子阱设计实现的。这些有利的性质使InAs 2DEG成为研究自旋量子比特基本方面的一个引人注目的宿主。此外，在具有较大Rashba系数的材料中具有弱自旋-轨道耦合可能为具有自旋-轨道耦合的工程结构在空间和/或时间上进行局部控制开辟了道路。
{"title":"Few-Electron Single and Double Quantum Dots in an \u0000InAs\u0000 Two-Dimensional Electron Gas","authors":"C. Mittag, J. Koski, M. Karalic, C. Thomas, A. Tuaz, A. Hatke, G. Gardner, M. Manfra, J. Danon, T. Ihn, K. Ensslin","doi":"10.1103/PRXQUANTUM.2.010321","DOIUrl":"https://doi.org/10.1103/PRXQUANTUM.2.010321","url":null,"abstract":"Most proof-of-principle experiments for spin qubits have been performed using GaAs-based quantum dots because of the excellent control they offer over tunneling barriers and the orbital and spin degrees of freedom. Here, we present the first realization of high-quality single and double quantum dots hosted in an InAs two-dimensional electron gas (2DEG), demonstrating accurate control down to the few-electron regime, where we observe a clear Kondo effect and singlet-triplet spin blockade. We measure an electronic $g$-factor of $16$ and a typical magnitude of the random hyperfine fields on the dots of $sim 0.6, mathrm{mT}$. We estimate the spin-orbit length in the system to be $sim 5-10, mu mathrm{m}$, which is almost two orders of magnitude longer than typically measured in InAs nanostructures, achieved by a very symmetric design of the quantum well. These favorable properties put the InAs 2DEG on the map as a compelling host for studying fundamental aspects of spin qubits. Furthermore, having weak spin-orbit coupling in a material with a large Rashba coefficient potentially opens up avenues for engineering structures with spin-orbit coupling that can be controlled locally in space and/or time.","PeriodicalId":8465,"journal":{"name":"arXiv: Mesoscale and Nanoscale Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-11-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84930779","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-11-26DOI: 10.1103/PHYSREVB.103.155402
A. A. Sokolik, O. Kotov, Y. Lozovik
Confined modes at the edge arbitrarily inclined with respect to optical axes of nonmagnetic anisotropic 2D materials are considered. By developing the exact Wiener-Hopf and approximated Fetter methods we studied edge modes dispersions, field and charge density distributions. The 2D layer is described by the Lorentz-type conductivities in one or both directions, which is realistic for natural anisotropic 2D materials and resonant hyperbolic metasurfaces. We demonstrate that, due to anisotropy, the edge mode exists only at wave vectors exceeding the nonzero threshold value if the edge is tilted with respect to the direction of the resonant conductivity. The dominating contribution to field and charge density spatial profiles is provided by evanescent 2D waves, which are confined both in space near the 2D layer and along the layer near its edge. The degree of field confinement along the layer is determined by wave vector or frequency mismatch between the edge mode and continuum of freely propagating 2D modes. Our analysis is suitable for various types of polaritons (plasmon-, phonon-, exciton-polaritons etc.) at large enough wave vectors. Thanks to superior field confinement in all directions perpendicular to the edge these modes look promising for modern plasmonics and sensorics.
{"title":"Plasmonic modes at inclined edges of anisotropic two-dimensional materials","authors":"A. A. Sokolik, O. Kotov, Y. Lozovik","doi":"10.1103/PHYSREVB.103.155402","DOIUrl":"https://doi.org/10.1103/PHYSREVB.103.155402","url":null,"abstract":"Confined modes at the edge arbitrarily inclined with respect to optical axes of nonmagnetic anisotropic 2D materials are considered. By developing the exact Wiener-Hopf and approximated Fetter methods we studied edge modes dispersions, field and charge density distributions. The 2D layer is described by the Lorentz-type conductivities in one or both directions, which is realistic for natural anisotropic 2D materials and resonant hyperbolic metasurfaces. We demonstrate that, due to anisotropy, the edge mode exists only at wave vectors exceeding the nonzero threshold value if the edge is tilted with respect to the direction of the resonant conductivity. The dominating contribution to field and charge density spatial profiles is provided by evanescent 2D waves, which are confined both in space near the 2D layer and along the layer near its edge. The degree of field confinement along the layer is determined by wave vector or frequency mismatch between the edge mode and continuum of freely propagating 2D modes. Our analysis is suitable for various types of polaritons (plasmon-, phonon-, exciton-polaritons etc.) at large enough wave vectors. Thanks to superior field confinement in all directions perpendicular to the edge these modes look promising for modern plasmonics and sensorics.","PeriodicalId":8465,"journal":{"name":"arXiv: Mesoscale and Nanoscale Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80871753","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-11-25DOI: 10.1103/PHYSREVB.103.125106
E. H. Hasdeo, J. Ekström, E. Idrisov, T. Schmidt
We study two-dimensional electron systems in the hydrodynamic regime. We show that a geometrical Berry curvature modifies the effective Navier-Stokes equation for viscous electron flow in topological materials. For small electric fields, the Hall current becomes negligible compared to the viscous longitudinal current. In this regime, we highlight an unconventional Poiseuille flow with an asymmetric profile and a deviation of the maximum of the current from the center of the system. In a two-dimensional infinite geometry, the Berry curvature leads to current whirlpools and an asymmetry of potential profile. This phenomenon can be probed by measuring the asymmetric non-local resistance profile.
{"title":"Electron hydrodynamics of two-dimensional anomalous Hall materials","authors":"E. H. Hasdeo, J. Ekström, E. Idrisov, T. Schmidt","doi":"10.1103/PHYSREVB.103.125106","DOIUrl":"https://doi.org/10.1103/PHYSREVB.103.125106","url":null,"abstract":"We study two-dimensional electron systems in the hydrodynamic regime. We show that a geometrical Berry curvature modifies the effective Navier-Stokes equation for viscous electron flow in topological materials. For small electric fields, the Hall current becomes negligible compared to the viscous longitudinal current. In this regime, we highlight an unconventional Poiseuille flow with an asymmetric profile and a deviation of the maximum of the current from the center of the system. In a two-dimensional infinite geometry, the Berry curvature leads to current whirlpools and an asymmetry of potential profile. This phenomenon can be probed by measuring the asymmetric non-local resistance profile.","PeriodicalId":8465,"journal":{"name":"arXiv: Mesoscale and Nanoscale Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80370064","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-11-25DOI: 10.1103/physrevresearch.2.043426
M. N. Huda, S. Kezilebieke, P. Liljeroth
Certain lattices with specific geometries have one or more spectral bands that are strictly flat, i.e. the electron energy is independent of the momentum. This can occur robustly irrespective of the specific couplings between the lattices sites due to the lattice symmetry, or it can result from fine-tuned couplings between the lattice sites. While the theoretical picture behind flat electronic bands is well-developed, experimental realization of these lattices has proven challenging. Utilizing scanning tunnelling microscopy (STM) and spectroscopy (STS), we manipulate individual vacancies in a chlorine monolayer on Cu(100) to construct various atomically precise 1D lattices with engineered flat bands. We realize experimentally both gapped and gapless flat band systems with single or multiple flat bands. We also demonstrate tuneability of the energy of the flat bands and how they can be switched "on" and "off" by breaking and restoring the symmetry of the lattice geometry. The experimental findings are corroborated by tight-binding calculations. Our results constitute the first experimental realizations of engineered flat bands in a 1D solid-state system and pave the way towards the construction of e.g. topological flat band systems and experimental tests of flat-band-assisted superconductivity in a fully controlled system.
{"title":"Designer flat bands in quasi-one-dimensional atomic lattices","authors":"M. N. Huda, S. Kezilebieke, P. Liljeroth","doi":"10.1103/physrevresearch.2.043426","DOIUrl":"https://doi.org/10.1103/physrevresearch.2.043426","url":null,"abstract":"Certain lattices with specific geometries have one or more spectral bands that are strictly flat, i.e. the electron energy is independent of the momentum. This can occur robustly irrespective of the specific couplings between the lattices sites due to the lattice symmetry, or it can result from fine-tuned couplings between the lattice sites. While the theoretical picture behind flat electronic bands is well-developed, experimental realization of these lattices has proven challenging. Utilizing scanning tunnelling microscopy (STM) and spectroscopy (STS), we manipulate individual vacancies in a chlorine monolayer on Cu(100) to construct various atomically precise 1D lattices with engineered flat bands. We realize experimentally both gapped and gapless flat band systems with single or multiple flat bands. We also demonstrate tuneability of the energy of the flat bands and how they can be switched \"on\" and \"off\" by breaking and restoring the symmetry of the lattice geometry. The experimental findings are corroborated by tight-binding calculations. Our results constitute the first experimental realizations of engineered flat bands in a 1D solid-state system and pave the way towards the construction of e.g. topological flat band systems and experimental tests of flat-band-assisted superconductivity in a fully controlled system.","PeriodicalId":8465,"journal":{"name":"arXiv: Mesoscale and Nanoscale Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88411138","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-11-24DOI: 10.1103/physrevmaterials.4.114008
Jiawei Yang, Kangyu Wang, S. Che, Zachary J. Tuchfeld, Kenji Watanabe, T. Taniguchi, D. Shcherbakov, S. Moon, D. Smirnov, Ruoyu Chen, M. Bockrath, C. N. Lau
We realize p-p'-p junctions in few-layer black phosphorus (BP) devices, and use magneto-transport measurements to study the equilibration and transmission of edge states at the interfaces of regions with different charge densities. We observe both full equilibration, where all edge channels equilibrate and are equally partitioned at the interfaces, and partial equilibration, where only equilibration only takes place among modes of the same spin polarization. Furthermore, the inner p'-region with low-doping level in the junction can function as a filter for highly doped p-regions which demonstrates gate-tunable transmission of edge channels.
{"title":"Equilibration and filtering of quantum Hall edge states in few-layer black phosphorus","authors":"Jiawei Yang, Kangyu Wang, S. Che, Zachary J. Tuchfeld, Kenji Watanabe, T. Taniguchi, D. Shcherbakov, S. Moon, D. Smirnov, Ruoyu Chen, M. Bockrath, C. N. Lau","doi":"10.1103/physrevmaterials.4.114008","DOIUrl":"https://doi.org/10.1103/physrevmaterials.4.114008","url":null,"abstract":"We realize p-p'-p junctions in few-layer black phosphorus (BP) devices, and use magneto-transport measurements to study the equilibration and transmission of edge states at the interfaces of regions with different charge densities. We observe both full equilibration, where all edge channels equilibrate and are equally partitioned at the interfaces, and partial equilibration, where only equilibration only takes place among modes of the same spin polarization. Furthermore, the inner p'-region with low-doping level in the junction can function as a filter for highly doped p-regions which demonstrates gate-tunable transmission of edge channels.","PeriodicalId":8465,"journal":{"name":"arXiv: Mesoscale and Nanoscale Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78465746","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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