Pub Date : 2023-03-31DOI: 10.31613/ceramist.2023.26.1.07
Hae Jin Kim
Demand for new computing systems equipped with ultra-high-density memory storage and new computer architecture is rapidly increasing with the tremendous increment of the amount of data produced and/or reproduced. In particular, the requirement for technology development is growing as conventional storage devices face the physical limitations for scaling down and the data bottleneck that the Von Neumann architecture increases. Among the recent emerging memory devices, the conductive bridge random access memory (CBRAM) has superior switching properties and excellent scalability to be adopted as the next-generation storage device and as the hardware implementation of the neuromorphic computing system. In this review, the previous papers on the resistive switching mechanism of CBRAM and the precedent CBRAM devices exploiting various materials proposed by many research groups are introduced. The principle of CBRAM is discussed including the operation mechanism, switching materials, and the challenges that need to be solved. A wide selection of materials including metal oxides, Chalcogenides, and other non-oxides have been examined as the electrolyte layer of the CBRAM. Various switching materials, device engineering, and material innovation approaches were introduced, and the research results for solving the problems of CBRAM were reviewed in depth.
{"title":"Recent Progress of the Cation Based Conductive Bridge Random Access Memory","authors":"Hae Jin Kim","doi":"10.31613/ceramist.2023.26.1.07","DOIUrl":"https://doi.org/10.31613/ceramist.2023.26.1.07","url":null,"abstract":"Demand for new computing systems equipped with ultra-high-density memory storage and new computer architecture is rapidly increasing with the tremendous increment of the amount of data produced and/or reproduced. In particular, the requirement for technology development is growing as conventional storage devices face the physical limitations for scaling down and the data bottleneck that the Von Neumann architecture increases. Among the recent emerging memory devices, the conductive bridge random access memory (CBRAM) has superior switching properties and excellent scalability to be adopted as the next-generation storage device and as the hardware implementation of the neuromorphic computing system. In this review, the previous papers on the resistive switching mechanism of CBRAM and the precedent CBRAM devices exploiting various materials proposed by many research groups are introduced. The principle of CBRAM is discussed including the operation mechanism, switching materials, and the challenges that need to be solved. A wide selection of materials including metal oxides, Chalcogenides, and other non-oxides have been examined as the electrolyte layer of the CBRAM. Various switching materials, device engineering, and material innovation approaches were introduced, and the research results for solving the problems of CBRAM were reviewed in depth.","PeriodicalId":9738,"journal":{"name":"Ceramist","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-03-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90483493","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-03-31DOI: 10.31613/ceramist.2023.26.1.05
Gwangwoo Han, Jong-Eun Hong, Wang-Je Lee, Kyoung-Ho Lee, H. Joo, Young-Sub An, D. Joh, Hyegyoung Kim, Seung-Bok Lee, Tak-Hyoung Lim, S. Park, R. Song
In the field of food and agriculture, fuel cell-based energy supply technology is gaining much attention for sustainable food systems with carbon neutrality by 2050. Previous studies have focused on the electricity balance using polymer electrolyte fuel cells (PEMFCs) without considering the temperature quality to maintain the environmental conditions required in smart farms. However, this study proposes a system that can provide all four energy sources (electricity, cooling, heating, and CO2) required by smart farms by using solid oxide fuel cells (SOFC), which can utilize high-quality heat. To confirm the feasibility of the proposed idea, we demonstrate the world's first 10 kW-class SOFC-based integrated system for a smart farm in Jinju, South Korea. The system's core components consist of a SOFC system, a hot thermal storage system, a cold thermal storage system, and a CO2 supply system. In this study, the applicability of the proposed system is verified by the experimental results of the effective production of cold and hot heat required by smart farms. In addition, the technical problems encountered during the demonstration are presented. In doing so, we suggest the direction of more economical and sustainable SOFC technology development for smart farm applications.
{"title":"A way to utilize SOFC systems: The energy solution for next-generation smart farm","authors":"Gwangwoo Han, Jong-Eun Hong, Wang-Je Lee, Kyoung-Ho Lee, H. Joo, Young-Sub An, D. Joh, Hyegyoung Kim, Seung-Bok Lee, Tak-Hyoung Lim, S. Park, R. Song","doi":"10.31613/ceramist.2023.26.1.05","DOIUrl":"https://doi.org/10.31613/ceramist.2023.26.1.05","url":null,"abstract":"In the field of food and agriculture, fuel cell-based energy supply technology is gaining much attention for sustainable food systems with carbon neutrality by 2050. Previous studies have focused on the electricity balance using polymer electrolyte fuel cells (PEMFCs) without considering the temperature quality to maintain the environmental conditions required in smart farms. However, this study proposes a system that can provide all four energy sources (electricity, cooling, heating, and CO2) required by smart farms by using solid oxide fuel cells (SOFC), which can utilize high-quality heat. To confirm the feasibility of the proposed idea, we demonstrate the world's first 10 kW-class SOFC-based integrated system for a smart farm in Jinju, South Korea. The system's core components consist of a SOFC system, a hot thermal storage system, a cold thermal storage system, and a CO2 supply system. In this study, the applicability of the proposed system is verified by the experimental results of the effective production of cold and hot heat required by smart farms. In addition, the technical problems encountered during the demonstration are presented. In doing so, we suggest the direction of more economical and sustainable SOFC technology development for smart farm applications.","PeriodicalId":9738,"journal":{"name":"Ceramist","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-03-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76267160","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-03-31DOI: 10.31613/ceramist.2023.26.1.02
Jaewook Lee, Wooseok Yang
Chalcogenide perovskites, ABX3 crystal structure with X=S, Se or Te, are emerging light absorber as an alternative to toxic and unstable halide perovskites. Despite their promising properties, the absence of low-temperature solution processing poses a major obstacle for chalcogenide perovskite-based optoelectronic devices. In this review, we survey various synthetic techniques for chalcogenide perovskites, focusing on BaZrS3 composition. Research progress in non-solution processing methods, such as solid-state reaction and pulsed laser deposition, is briefly covered and recent reports about low-temperature solution processing for chalcogenide perovskite are highlighted. Future research perspective toward realizing chalcogenide-based optoelectronic device based on solution processing is provided. We believe this timely review will facilitate the discovery of novel solution processing for chalcogenide perovskites, the challenging materials with tantalizing prospects.
{"title":"Recent progress in chalcogenide perovskites: toward low-temperature solution processing","authors":"Jaewook Lee, Wooseok Yang","doi":"10.31613/ceramist.2023.26.1.02","DOIUrl":"https://doi.org/10.31613/ceramist.2023.26.1.02","url":null,"abstract":"Chalcogenide perovskites, ABX3 crystal structure with X=S, Se or Te, are emerging light absorber as an alternative to toxic and unstable halide perovskites. Despite their promising properties, the absence of low-temperature solution processing poses a major obstacle for chalcogenide perovskite-based optoelectronic devices. In this review, we survey various synthetic techniques for chalcogenide perovskites, focusing on BaZrS3 composition. Research progress in non-solution processing methods, such as solid-state reaction and pulsed laser deposition, is briefly covered and recent reports about low-temperature solution processing for chalcogenide perovskite are highlighted. Future research perspective toward realizing chalcogenide-based optoelectronic device based on solution processing is provided. We believe this timely review will facilitate the discovery of novel solution processing for chalcogenide perovskites, the challenging materials with tantalizing prospects.","PeriodicalId":9738,"journal":{"name":"Ceramist","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-03-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72630386","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-03-31DOI: 10.31613/ceramist.2023.26.1.09
Myeong Seop Song, S. Chae
The discovery of the ferroelectricity of HfO2 in 2011 has opened up new avenues for the application of ferroelectric technology. With the stability of ferroelectricity in a few nm scales, HfO2 has become a valuable material for the development of next-generation electronic memory devices. The unique structure of HfO2 gives rise to various ferroelectric properties and behaviors that can be utilized in different types of devices such as ferroelectric field effect transistors (FeFETs), negative capacitance field effect transistors (NCFETs), ferroelectric tunnel junctions (FTJs), and ferroelectric capacitors (FeCAPs). In this review, we explore the potential of HfO2 for the high-density storage of data and low-energy consumption in next-generation devices. We demonstrate the operating principles and strengths of HfO2 in various device applications, shedding light on how this material can help address the electronics industry's current challenges.
{"title":"The Potential of ferroelectric HfO2 for Next-Generation Memory Device: Ferroelectric Properties and Applications","authors":"Myeong Seop Song, S. Chae","doi":"10.31613/ceramist.2023.26.1.09","DOIUrl":"https://doi.org/10.31613/ceramist.2023.26.1.09","url":null,"abstract":"The discovery of the ferroelectricity of HfO2 in 2011 has opened up new avenues for the application of ferroelectric technology. With the stability of ferroelectricity in a few nm scales, HfO2 has become a valuable material for the development of next-generation electronic memory devices. The unique structure of HfO2 gives rise to various ferroelectric properties and behaviors that can be utilized in different types of devices such as ferroelectric field effect transistors (FeFETs), negative capacitance field effect transistors (NCFETs), ferroelectric tunnel junctions (FTJs), and ferroelectric capacitors (FeCAPs). In this review, we explore the potential of HfO2 for the high-density storage of data and low-energy consumption in next-generation devices. We demonstrate the operating principles and strengths of HfO2 in various device applications, shedding light on how this material can help address the electronics industry's current challenges.","PeriodicalId":9738,"journal":{"name":"Ceramist","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-03-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74362598","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-03-31DOI: 10.31613/ceramist.2023.26.1.01
Hyeongyu Gim, Kootak Hong
With the advent of the 4th industrial revolution era, there has been a high demand for high-performance electronic devices capable of collecting, storing, and calculating vast amounts of data. Vanadium dioxide (VO2) is considered an attractive candidate for next-generation electronic devices as a prototypical strongly correlated material exhibiting a metal-insulator transition (MIT) accompanied by huge electrical resistivity changes in a few nanoseconds. The nonvolatile control of the MIT in VO2 has recently been the subject of intensive research. In this report, we review recent advancements in the field of nonvolatile control of MIT in VO2, using electrochemical redox reactions, inverse piezoelectric effect, and ferroelectric polarization, and their potential to develop high-performance next-generation electronic devices.
{"title":"Nonvolatile Control of Metal-Insulator Transition in VO2 and Its Applications","authors":"Hyeongyu Gim, Kootak Hong","doi":"10.31613/ceramist.2023.26.1.01","DOIUrl":"https://doi.org/10.31613/ceramist.2023.26.1.01","url":null,"abstract":"With the advent of the 4th industrial revolution era, there has been a high demand for high-performance electronic devices capable of collecting, storing, and calculating vast amounts of data. Vanadium dioxide (VO2) is considered an attractive candidate for next-generation electronic devices as a prototypical strongly correlated material exhibiting a metal-insulator transition (MIT) accompanied by huge electrical resistivity changes in a few nanoseconds. The nonvolatile control of the MIT in VO2 has recently been the subject of intensive research. In this report, we review recent advancements in the field of nonvolatile control of MIT in VO2, using electrochemical redox reactions, inverse piezoelectric effect, and ferroelectric polarization, and their potential to develop high-performance next-generation electronic devices.","PeriodicalId":9738,"journal":{"name":"Ceramist","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-03-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85388301","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-03-31DOI: 10.31613/ceramist.2023.26.1.03
Sunho Lee, K. Kwon
With rapid industrial development, a large amount of waste gases has been produced, causing severe industrial disasters and human health problems. In order to avoid gas-related accidents and prevent potential health issues, the detection and monitoring of hazardous gases is essential. In order to effectively detect harmful gases, semiconductor gas sensors have gained increasing attention due to their high sensitivity, small size, cost-effectiveness and ease of manufacturing. This article reviews metal oxide-based semiconductor gas sensors. Firstly, features of metal oxide-based semiconductor gas sensors including major advantages and limitations are discussed. Then, the operating mechanism of semiconductor gas sensors are discussed with a list of widely studied metal oxides. Finally, the semiconductor gas sensors made of four different metal oxides – i) tin oxide (SnO2), ii) indium oxide (In2O3), iii) zinc oxide (ZnO), and iv) tungsten trioxide (WO3) – are discussed from the aspects of current challenges, recent research strategies and future perspectives.
{"title":"Recent Advances and Trends in Metal Oxide-based Semiconductor Gas Sensors","authors":"Sunho Lee, K. Kwon","doi":"10.31613/ceramist.2023.26.1.03","DOIUrl":"https://doi.org/10.31613/ceramist.2023.26.1.03","url":null,"abstract":"With rapid industrial development, a large amount of waste gases has been produced, causing severe industrial disasters and human health problems. In order to avoid gas-related accidents and prevent potential health issues, the detection and monitoring of hazardous gases is essential. In order to effectively detect harmful gases, semiconductor gas sensors have gained increasing attention due to their high sensitivity, small size, cost-effectiveness and ease of manufacturing. This article reviews metal oxide-based semiconductor gas sensors. Firstly, features of metal oxide-based semiconductor gas sensors including major advantages and limitations are discussed. Then, the operating mechanism of semiconductor gas sensors are discussed with a list of widely studied metal oxides. Finally, the semiconductor gas sensors made of four different metal oxides – i) tin oxide (SnO2), ii) indium oxide (In2O3), iii) zinc oxide (ZnO), and iv) tungsten trioxide (WO3) – are discussed from the aspects of current challenges, recent research strategies and future perspectives.","PeriodicalId":9738,"journal":{"name":"Ceramist","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-03-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91016655","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-03-31DOI: 10.31613/ceramist.2023.26.1.04
Donguk Kim, Tae-kyeong Lee, Seungwoo Han, Mingi Choi, Wonyoung Lee
Protonic ceramic cells (PCCs) are environmentally friendly energy conversion devices that operate in the intermediate temperatures due to their high ionic conductivity. This can resolve the drawbacks of solid oxide cells, such as thermochemical, physical, and thermal degradation caused by high operating temperatures. To effectively utilize PCCs as a next generation energy source, the development and optimization of PCC electrolyte materials and manufacturing process of electrochemical device are essential. This review summarizes the current progress, approaches, and challenges of PCCs and offers guidance on material design and manufacturing processes to overcome these difficulties.
{"title":"Advances in developing protonic ceramic cells","authors":"Donguk Kim, Tae-kyeong Lee, Seungwoo Han, Mingi Choi, Wonyoung Lee","doi":"10.31613/ceramist.2023.26.1.04","DOIUrl":"https://doi.org/10.31613/ceramist.2023.26.1.04","url":null,"abstract":"Protonic ceramic cells (PCCs) are environmentally friendly energy conversion devices that operate in the intermediate temperatures due to their high ionic conductivity. This can resolve the drawbacks of solid oxide cells, such as thermochemical, physical, and thermal degradation caused by high operating temperatures. To effectively utilize PCCs as a next generation energy source, the development and optimization of PCC electrolyte materials and manufacturing process of electrochemical device are essential. This review summarizes the current progress, approaches, and challenges of PCCs and offers guidance on material design and manufacturing processes to overcome these difficulties.","PeriodicalId":9738,"journal":{"name":"Ceramist","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-03-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74059091","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-03-31DOI: 10.31613/ceramist.2023.26.1.06
Minki Choe, Dahui Jeon, Inhong Hwang, I. Baek
Over the past decade, many research groups have been striving to develop high-performance p-type switching oxide materials for implementing complementary metal–oxide–semiconductor (CMOS) thin film devices. However, realizing p-type oxide thin film transistors (TFTs) whose electrical properties are comparable to n-type oxide TFTs has been challenging. This is because of inherent characteristics of p-type oxide materials such as the high formation energy of native acceptors and high hole effective mass caused by localized hole transport path. Developing a p-type oxide with a delocalized hole transport pathway and low hole formation energy is crucial for the production of CMOS circuits utilizing oxide thin films. NiO, SnO, and CuOx are being actively studied as candidate materials that satisfy these requirements. This review discusses the latest advances in the synthesis method of p-type binary oxide thin films and the approach for electrical performance enhancement.
{"title":"Recent progress of the p-type oxide thin films for transistor applications: Nickel oxide, Tin oxide, and Copper oxide","authors":"Minki Choe, Dahui Jeon, Inhong Hwang, I. Baek","doi":"10.31613/ceramist.2023.26.1.06","DOIUrl":"https://doi.org/10.31613/ceramist.2023.26.1.06","url":null,"abstract":"Over the past decade, many research groups have been striving to develop high-performance p-type switching oxide materials for implementing complementary metal–oxide–semiconductor (CMOS) thin film devices. However, realizing p-type oxide thin film transistors (TFTs) whose electrical properties are comparable to n-type oxide TFTs has been challenging. This is because of inherent characteristics of p-type oxide materials such as the high formation energy of native acceptors and high hole effective mass caused by localized hole transport path. Developing a p-type oxide with a delocalized hole transport pathway and low hole formation energy is crucial for the production of CMOS circuits utilizing oxide thin films. NiO, SnO, and CuOx are being actively studied as candidate materials that satisfy these requirements. This review discusses the latest advances in the synthesis method of p-type binary oxide thin films and the approach for electrical performance enhancement.","PeriodicalId":9738,"journal":{"name":"Ceramist","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-03-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87916799","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-31DOI: 10.31613/ceramist.2022.25.4.02
Sudong Chae
Among the currently available low-dimensional nanomaterials, single-chain atomic crystals (SCAC) exhibit unique physical and chemical properties because of their one-dimensional atomic structure. SCAC is the isolated molecular chain unit from bulk 1D chained materials, in which weak van der Waals or ionic interactions stack together SCACs with strong intra-chain bonding. They have one-dimensional fibrous morphology and sub-nanometer scale diameter similar to conventional organic polymers. Furthermore, unlike conventional organic polymers that consist only of organic elements such as C, H, N, O, and S, SCACs are composed of inorganic elements, such as transition metal, chalcogen, and halogen. Therefore, SCACs have novel additional properties, such as electrical, optical, mechanical, and electrochemical properties that conventional organic polymers do not.To investigate the properties of isolated SCAC, the preparation of bulk single crystal with high crystallinity, and strategy for exfoliation are required. In this review, the studies on synthesis, exfoliation and applications of the representative SCAC, LiMo3Se3 are described. These results demonstrate that solution processed SCACs are promising building block for future application.
{"title":"Synthesis and Applications of Single-Chain Atomic Crystal, LiMo3Se3","authors":"Sudong Chae","doi":"10.31613/ceramist.2022.25.4.02","DOIUrl":"https://doi.org/10.31613/ceramist.2022.25.4.02","url":null,"abstract":"Among the currently available low-dimensional nanomaterials, single-chain atomic crystals (SCAC) exhibit unique physical and chemical properties because of their one-dimensional atomic structure. SCAC is the isolated molecular chain unit from bulk 1D chained materials, in which weak van der Waals or ionic interactions stack together SCACs with strong intra-chain bonding. They have one-dimensional fibrous morphology and sub-nanometer scale diameter similar to conventional organic polymers. Furthermore, unlike conventional organic polymers that consist only of organic elements such as C, H, N, O, and S, SCACs are composed of inorganic elements, such as transition metal, chalcogen, and halogen. Therefore, SCACs have novel additional properties, such as electrical, optical, mechanical, and electrochemical properties that conventional organic polymers do not.To investigate the properties of isolated SCAC, the preparation of bulk single crystal with high crystallinity, and strategy for exfoliation are required. In this review, the studies on synthesis, exfoliation and applications of the representative SCAC, LiMo3Se3 are described. These results demonstrate that solution processed SCACs are promising building block for future application.","PeriodicalId":9738,"journal":{"name":"Ceramist","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2022-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84598616","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-31DOI: 10.31613/ceramist.2022.25.4.08
Y. Jo, Dae Kyu Lee, J. Y. Kwak
In the fourth industrial revolution, the efficient processing of huge amounts of data is important due to the development of artificial intelligence (AI), internet of things (IoT), and machine learning (ML). The conventional computing system, which is known as von Neumann architecture, has been facing bottleneck problems because of the physical separation of memory and central processing unit (CPU). Many researchers have interested to study on neuromorphic computing, inspired by the human brain, to solve the bottleneck problems. The development of artificial neuromorphic devices, such as neuron and synaptic devices, is important to successfully demonstrate a neuromorphic computing hardware. Various Si CMOS transistor-based circuits have been investigated to implement the behaviors of the biological neuron and synapse; however, they are not suitable for mimicking the large-scale biological neural networks because of Si CMOS transistor’s scalability and power consumption issues. In this report, we review the recent research progress in artificial neurons and synaptic devices based on emerging materials and discuss the future research direction of artificial neural networks.
{"title":"Recent Progress in Development of Artificial Neuromorphic Devices Based on Emerging Materials","authors":"Y. Jo, Dae Kyu Lee, J. Y. Kwak","doi":"10.31613/ceramist.2022.25.4.08","DOIUrl":"https://doi.org/10.31613/ceramist.2022.25.4.08","url":null,"abstract":"In the fourth industrial revolution, the efficient processing of huge amounts of data is important due to the development of artificial intelligence (AI), internet of things (IoT), and machine learning (ML). The conventional computing system, which is known as von Neumann architecture, has been facing bottleneck problems because of the physical separation of memory and central processing unit (CPU). Many researchers have interested to study on neuromorphic computing, inspired by the human brain, to solve the bottleneck problems. The development of artificial neuromorphic devices, such as neuron and synaptic devices, is important to successfully demonstrate a neuromorphic computing hardware. Various Si CMOS transistor-based circuits have been investigated to implement the behaviors of the biological neuron and synapse; however, they are not suitable for mimicking the large-scale biological neural networks because of Si CMOS transistor’s scalability and power consumption issues. In this report, we review the recent research progress in artificial neurons and synaptic devices based on emerging materials and discuss the future research direction of artificial neural networks.","PeriodicalId":9738,"journal":{"name":"Ceramist","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2022-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78311747","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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