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The developments in carbon-modified graphitic carbon nitride for photoelectrochemical water splitting: a mini review 用于光电化学水分离的碳改性氮化石墨的发展:微型综述
Pub Date : 2024-06-25 DOI: 10.1007/s43673-024-00123-9
Yuewen Yang, Tingrui Xu, Ruiqin Zhang

Graphitic carbon nitride (g-CN), as a potential photoelectrode for photoelectrochemical water splitting, has garnered significant research attention owing to its favorable attributes, including a suitable bandgap, abundant elemental composition, excellent thermal stability, and non-toxicity. However, the limited efficiency of visible light absorption and poor electrical conductivity of pure g-CN result in low photocurrent density and photocatalytic activity, falling short of meeting the requirements for commercial applications. In contrast, graphitic carbon materials possess high conductivity and stability, appearing to be an excellent candidate for enhancing the photocatalytic performance of g-CN while maintaining its stability. Recently, nitrogen vacancies, surface junction, carbon crystallite introduction, and carbon atom doping methods have been employed to prepare carbon-modified g-CN. The introduced π-electron conjugated system by sp2-hybridized carbon atoms indeed extends the visible light absorption and photocurrent of g-CN, resulting in improved photocatalytic performance. In this review, we highlight recent advancements in the development of carbon-modified g-CN and offer insights into the future prospects of g-CN-based films.

氮化石墨(g-CN)作为一种潜在的光电化学分水光电电极,因其具有合适的带隙、丰富的元素组成、优异的热稳定性和无毒性等有利特性而备受研究关注。然而,纯 g-CN 的可见光吸收效率有限,导电性差,导致光电流密度和光催化活性较低,无法满足商业应用的要求。相比之下,石墨碳材料具有高导电性和稳定性,似乎是在保持 g-CN 稳定性的同时提高其光催化性能的绝佳候选材料。最近,人们采用了氮空位、表面接合、碳晶粒引入和碳原子掺杂等方法来制备碳改性 g-CN。sp2-杂化碳原子引入的π电子共轭体系确实扩展了 g-CN 的可见光吸收和光电流,从而提高了光催化性能。在这篇综述中,我们重点介绍了碳修饰 g-CN 的最新进展,并对基于 g-CN 的薄膜的未来前景提出了见解。
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引用次数: 0
News and Views (5&6) 告别 Peter Fulde;马来亚大学天文学和天体物理学研究中心 (CAAR)
Pub Date : 2024-06-10 DOI: 10.1007/s43673-024-00120-y
AAPPS Bulletin
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引用次数: 0
News and Views (3&4) 新闻与观点 (3&4)
Pub Date : 2024-04-29 DOI: 10.1007/s43673-024-00119-5
AAPPS Bulletin
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引用次数: 0
Surface and bulk acoustic wave resonators based on aluminum nitride for bandpass filters 基于氮化铝的带通滤波器表面和体声波谐振器
Pub Date : 2024-04-08 DOI: 10.1007/s43673-023-00104-4
Xian-Hu Zha, Jing-Ting Luo, Ran Tao, Chen Fu

Bandpass filters with high frequency and wide bandwidth are indispensable parts of the fifth-generation telecommunication technologies, and currently, they are mainly based on surface and bulk acoustic wave resonators. Owing to its high mechanical strength, excellent stability at elevated temperatures, good thermal conductivity, and compatibility with complementary metal-oxide-semiconductor technology, aluminum nitride (AlN) becomes the primary piezoelectric material for high-frequency resonators. This review briefly introduces the structures and key performance parameters of the acoustic resonators. The common filter topologies are also discussed. In particular, research progresses in the piezoelectric AlN layer, electrodes, and substrates of the resonators are elaborated. Increasing the electromechanical coupling constant is the main concern for the AlN film. To synthesize AlN in single-crystalline or poly-crystalline with a high intensity of (0002) orientation, and alloy the AlN with other elements are two effective approaches. For the substrates and bottom electrodes, lattice and thermal expansion mismatch, and surface roughness are critical for the synthesis of a high-crystal-quality piezoelectric layer. The electrodes with low electrical resistance, large acoustic-impedance mismatch to the piezoelectric layer, and low density are ideal to reduce insertion loss. Based on the research progress, several possible research directions in the AlN-based filters are suggested at the end of the paper.

高频宽带通滤波器是第五代电信技术不可或缺的组成部分,目前主要采用表面声波谐振器和体声波谐振器。氮化铝(AlN)具有机械强度高、高温稳定性好、热导率高以及与互补金属氧化物半导体技术兼容等优点,因此成为高频谐振器的主要压电材料。本综述简要介绍了声学谐振器的结构和主要性能参数。此外,还讨论了常见的滤波器拓扑结构。特别是对谐振器的压电 AlN 层、电极和基底的研究进展进行了阐述。提高机电耦合常数是氮化铝薄膜的主要关注点。合成具有高强度(0002)取向的单晶或多晶氮化铝,以及将氮化铝与其他元素合金化是两种有效的方法。对于基底和底部电极,晶格和热膨胀不匹配以及表面粗糙度是合成高晶体质量压电层的关键。电阻低、与压电层的声阻失配大且密度低的电极是降低插入损耗的理想选择。根据研究进展,本文最后提出了氮化铝基滤波器的几个可能研究方向。
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引用次数: 0
A newly developed Cu(Rh) alloy film and its characteristics and applications 新开发的铜(Rh)合金薄膜及其特性和应用
Pub Date : 2024-03-21 DOI: 10.1007/s43673-024-00118-6
Chon-Hsin Lin
<div><p>A new type of copper (Cu)-rhodium (Rh)-alloy, Cu(Rh), films is developed by co-sputtering copper and rhodium onto silicon (Si) substrates under an argon (Ar) atmosphere. The new films are next annealed at 600 and 670 °C, or alternatively at 100 and 450 °C, for 1 h. Longer annealing to the films, for up to 8 days, is also conducted to explore resistivity variation. The resistivity of the new 300-nm-thick film is 2.19 μΩ cm after annealing at 670 °C for 1 h and drifts to 2.26 and 2.14 μΩ after annealing at 400 and 450 °C, respectively, for 200 h. A 2.7-μm-thick Sn layer is then thermally evaporated atop the new film for stable flip-chip solder joints; their metal and Cu-Sn intermetallic compound (IMC) growth processes vs. various annealing periods are tested. After annealing at 670 °C, the new 300-nm-thick film’s adhesive strength reaches 44.2 ± 0.01 MPa, which is 11 ~ 12-fold that of their pure Cu counterpart. Some key test results of the new film are disclosed herein, including its X-ray diffraction (XRD) patterns, transmission electron microscopy (TEM) images, secondary-ion mass spectrometry (SIMS), time-dependent dielectric-breakdown (TDDB) lifetime curves, and adhesive strength. The new film’s antibacterial efficacy arrives at an antibacterial ratio of approximately 100% against <i>Staphylococcus aureus</i> (<i>S. aureus</i>) BCRC 10451 for the 300-nm-thick film and approximately 99.82% for the 8 nm film, far superior to that of a pure Cu film, which is 0 with the same annealing temperature range. The new film, hence, seems to be a remarkable candidate material for various industrial applications, such as ultra-large-scale integrated circuits (ULSIC), micro-electronic circuits, printed circuits, flip-chip technology, medical care concerning antibacteria, and the like.</p><h3>Graphical Abstract</h3><p>A new type of copper (Cu)-rhodium (Rh)-alloy, Cu(Rh), films is developed by co-sputtering copper and rhodium onto silicon (Si) substrates under an argon (Ar) atmosphere and then annealing the new films at 600 and 670 °C, or alternatively at 100 and 450 °C, for 1 h. Longer annealing to the films, for up to 8 days, is also conducted to explore resistivity variation. The resistivity of the new 300-nm-thick film is 2.19 mW cm after annealing at 670°C for 1 h and drifts to 2.26 and 2.14 mW after annealing at 400 and 450 °C, respectively, for 200 h. A 2.7-μm-thick Sn layer is next thermally evaporated atop the new film for stable flip-chip solder joints; their metal and Cu-Sn intermetallic compound (IMC) growth processes vs. various annealing periods are tested. After annealing at 670°C, the new 300-nm-thick film’s adhesive strength reaches 44.2 ± 0.01 MPa, which is 11~12-fold that of their pure Cu counterpart. Some key test results of the new film are disclosed herein, including its X-ray diffraction (XRD) patterns, transmission electron microscopy (TEM) images, secondary-ion mass spectrometry (SIMS), time-dependent dielectric-breakdown (TDDB
通过在氩(Ar)气氛下将铜和铑共同溅射到硅(Si)基板上,开发出了一种新型铜(Cu)-铑(Rh)合金(Cu(Rh))薄膜。新薄膜接下来在 600 和 670 ℃ 或 100 和 450 ℃ 下退火 1 小时。在 670 ℃ 退火 1 小时后,新的 300 纳米厚薄膜的电阻率为 2.19 μΩ cm,在 400 ℃ 和 450 ℃ 退火 200 小时后,其电阻率分别降至 2.26 和 2.14 μΩ。在 670 °C 退火后,300 纳米厚的新薄膜的粘合强度达到了 44.2 ± 0.01 MPa,是纯铜薄膜的 11 到 12 倍。本文披露了新薄膜的一些关键测试结果,包括其 X 射线衍射 (XRD) 图样、透射电子显微镜 (TEM) 图像、二次离子质谱 (SIMS)、随时间变化的介电损耗 (TDDB) 寿命曲线和粘合强度。新薄膜的抗菌效果达到:300 nm 厚的薄膜对金黄色葡萄球菌(S. aureus)BCRC 10451 的抗菌率约为 100%,8 nm 薄膜的抗菌率约为 99.82%,远远优于相同退火温度范围内的纯铜薄膜。因此,这种新型薄膜似乎是超大规模集成电路 (ULSIC)、微电子电路、印刷电路、倒装芯片技术、抗菌医疗等各种工业应用的理想候选材料。图解 摘要 在氩(Ar)气氛下,将铜(Cu)和铑(Rh)共同溅射到硅(Si)衬底上,然后在 600 和 670 ℃ 或 100 和 450 ℃ 下退火 1 小时,开发出一种新型铜(Cu)-铑(Rh)合金(Cu(Rh))薄膜。在 670°C 下退火 1 小时后,300 纳米厚的新薄膜的电阻率为 2.19 mW cm,在 400°C 和 450°C 下退火 200 小时后,电阻率分别升至 2.26 mW 和 2.14 mW。接下来,在新薄膜上热蒸发 2.7μm 厚的锡层,以获得稳定的倒装芯片焊点;测试了它们的金属和铜锡金属间化合物 (IMC) 生长过程与不同退火时间的关系。在 670°C 退火后,300 纳米厚的新薄膜的粘合强度达到了 44.2 ± 0.01 兆帕,是纯铜薄膜的 11~12 倍。本文披露了新薄膜的一些关键测试结果,包括其 X 射线衍射 (XRD) 图样、透射电子显微镜 (TEM) 图像、二次离子质谱 (SIMS)、随时间变化的介电损耗 (TDDB) 寿命曲线和粘合强度。新薄膜的抗菌效果达到:300 nm 厚的薄膜对金黄色葡萄球菌 BCRC 10451 的抗菌率约为 100%,8 nm 厚的薄膜对金黄色葡萄球菌 BCRC 10451 的抗菌率约为 99.82%,远远优于相同退火温度范围内的纯铜薄膜。因此,新薄膜似乎是各种工业应用(如超大规模集成电路 (ULSIC)、微电子电路、印刷电路、倒装芯片技术、抗菌医疗等)的理想候选材料。
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引用次数: 0
A quantum algorithm for linear differential equations with layerwise parameterized quantum circuits 使用层层参数化量子电路的线性微分方程量子算法
Pub Date : 2024-03-04 DOI: 10.1007/s43673-023-00115-1
Junxiang Xiao, Jingwei Wen, Zengrong Zhou, Ling Qian, Zhiguo Huang, Shijie Wei, Guilu Long

Solving linear differential equations is a common problem in almost all fields of science and engineering. Here, we present a variational algorithm with shallow circuits for solving such a problem: given an (N times N) matrix ({varvec{A}}), an N-dimensional vector (varvec{b}), and an initial vector (varvec{x}(0)), how to obtain the solution vector (varvec{x}(T)) at time T according to the constraint (textrm{d}varvec{x}(t)/textrm{d} t = {varvec{A}}varvec{x}(t) + varvec{b}). The core idea of the algorithm is to encode the equations into a ground state problem of the Hamiltonian, which is solved via hybrid quantum-classical methods with high fidelities. Compared with the previous works, our algorithm requires the least qubit resources and can restore the entire evolutionary process. In particular, we show its application in simulating the evolution of harmonic oscillators and dynamics of non-Hermitian systems with (mathcal{P}mathcal{T})-symmetry. Our algorithm framework provides a key technique for solving so many important problems whose essence is the solution of linear differential equations.

求解线性微分方程几乎是所有科学和工程领域的常见问题。在此,我们提出了一种带有浅层电路的变分算法来解决此类问题:给定一个 (N times N) 矩阵 ({varvec{A}}),一个 N 维向量 (varvec{b}),以及一个初始向量 (varvec{x}(0))、如何根据约束条件 (textrm{d}varvec{x}(t)/textrm{d} t = {varvec{A}}varvec{x}(t) + varvec{b}),在时间 T 得到解向量 (varvec{x}(T))。该算法的核心思想是将方程编码为哈密顿的基态问题,并通过量子-经典混合方法以高保真度求解。与前人的研究相比,我们的算法所需量子比特资源最少,而且可以还原整个演化过程。特别是,我们展示了它在模拟谐振子演化和具有(mathcal{P}mathcal{T})对称性的非赫米提系统动力学中的应用。我们的算法框架为解决许多本质上是线性微分方程求解的重要问题提供了关键技术。
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引用次数: 0
The study of angular distance distribution to the solar flares during different solar cycles 不同太阳周期中太阳耀斑的角距离分布研究
Pub Date : 2024-02-09 DOI: 10.1007/s43673-023-00102-6
Ramy Mawad

The angular distance of the solar flares to the projective point of the center of the solar disk on the solar spherical surface has been studied by the heliographical or helioprojective coordinates, during the periods 1975–2021 for GOES events and 2002–2021 for RHESSI events, hereafter “distance.” It gives a specific distribution curvature. It has also been noted that when using the number of solar flare events in each satellite, GOES or RHESSI, or even using the sum of the flux (class) or importance parameter, it obtains the same result, which is that the shape of the distribution curve remains in its shape without any significant change. In addition, it has been shown that the distribution curve contains a specific number of peaks. These peaks have a specific distance from the center of the solar disk that is very similar to the projection of the solar interior layers on the solar disk. For this reason, the names of these four main peaks have been given as follows: (1) the core circle (0–15°): it is a projection of the solar core onto the solar disk, (2) radiative ring (15–45°), and (3) the convection ring (45–55°). The limb ring is 80–90°. This result makes us wonder why the number of events in the middle of the solar disk is few, and also small at the solar limb, while many in the other parts in the solar disk. This suggests that we need to understand the sun better than before, and it also suggests that solar flares are connected to each other through the solar interior layers, the extent of which may reach the convection zone or perhaps beyond that, or the opacity of the convection zone may be less than the currently estimated value.

太阳耀斑到太阳圆盘中心在太阳球面上的投影点的角距离是通过太阳地理坐标或太阳投影坐标来研究的,1975-2021 年期间研究的是 GOES 事件,2002-2021 年期间研究的是 RHESSI 事件,以下简称 "距离"。它给出了一个特定的分布曲率。人们还注意到,如果使用 GOES 或 RHESSI 每颗卫星的太阳耀斑事件数量,甚至使用通量(等级)或重要性参数的总和,都会得到相同的结果,即分布曲线的形状保持不变,没有任何明显变化。此外,研究还表明,分布曲线包含特定数量的峰值。这些峰值距离太阳圆盘中心有一个特定的距离,这个距离与太阳内部层在太阳圆盘上的投影非常相似。因此,这四个主要峰值被命名如下:(1) 内核环(0-15°):是太阳内核在太阳盘上的投影;(2) 辐射环(15-45°);(3) 对流环(45-55°)。边缘环为 80-90°。这一结果让我们不禁要问,为什么日盘中部的事件数量很少,日缘的事件数量也很少,而日盘其他部分的事件数量却很多。这表明我们需要比以前更好地了解太阳,也表明太阳耀斑是通过太阳内部层相互连接的,其范围可能达到对流区,也可能超过对流区,或者对流区的不透明度可能小于目前估计的值。
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引用次数: 0
Intersections of ultracold atomic polarons and nuclear clusters: how is a chart of nuclides modified in dilute neutron matter? 超冷原子极子与核簇的交汇:稀中子物质中的核素图是如何变化的?
Pub Date : 2024-02-06 DOI: 10.1007/s43673-024-00117-7
Hiroyuki Tajima, Hajime Moriya, Wataru Horiuchi, Eiji Nakano, Kei Iida

Neutron star observations, as well as experiments on neutron-rich nuclei, used to motivate one to look at degenerate nuclear matter from its extreme, namely, pure neutron matter. As an important next step, impurities and clusters in dilute neutron matter have attracted special attention. In this paper, we review in-medium properties of these objects on the basis of the physics of polarons, which have been recently realized in ultracold atomic experiments. We discuss how such atomic and nuclear systems are related to each other in terms of polarons. In addition to the interdisciplinary understanding of in-medium nuclear clusters, it is shown that the quasiparticle energy of a single proton in neutron matter is associated with the symmetry energy, implying a novel route toward the nuclear equation of state from the neutron-rich side.

中子星观测以及富中子原子核实验,曾经促使人们从其极端,即纯中子物质,来观察退化核物质。作为重要的下一步,稀中子物质中的杂质和团簇引起了特别关注。在本文中,我们以极子物理学为基础,回顾了这些物体的中间特性,这些特性最近已在超冷原子实验中实现。我们讨论了这些原子和核系统如何在极子方面相互关联。除了对中间核团簇的跨学科理解之外,我们还证明了中子物质中单个质子的准粒子能与对称能相关联,这意味着从富含中子的一侧走向核状态方程的一条新路线。
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引用次数: 0
Density-based Reactivity Theory Applied to Excited States 基于密度的反应性理论应用于激发态
Pub Date : 2024-02-02 DOI: 10.1007/s43673-023-00114-2
Xiaoyan An, Wenbiao Zhang, Xin He, Meng Li, Chunying Rong, Shubin Liu

Excited states are essential to many chemical processes in photosynthesis, solar cells, light-emitting diodes, and so on, yet how to formulate, quantify, and predict physiochemical properties for excited states from the theoretical perspective is far from being established. In this work, we leverage the four density-based frameworks from density functional theory (DFT) including orbital-free DFT, conceptual DFT, information-theoretic approach and direct use of density associated descriptors and apply them to the lowest singlet and triplet excited states for a variety of molecular systems to examine their stability, bonding, and reactivity propensities. Our results from the present study elucidate that it is feasible to employ these density-based frameworks to appreciate physiochemical properties for excited states and that excited state propensities can be markedly different from, sometime completely opposite to, those in the ground state. This work is the first effort, to the best of our knowledge, utilizing density-based reactivity frameworks to excited state. It should offer ample opportunities in the future to deal with real-world problems in photophysical and photochemical processes and transformations.

Graphical Abstract

激发态对于光合作用、太阳能电池、发光二极管等许多化学过程都至关重要,然而如何从理论角度制定、量化和预测激发态的理化性质却远未得到确立。在这项工作中,我们利用密度泛函理论(DFT)的四种基于密度的框架,包括无轨道 DFT、概念 DFT、信息理论方法和直接使用密度相关描述符,并将它们应用于多种分子体系的最低单线态和三线态激发态,以研究它们的稳定性、成键性和反应性倾向。本研究的结果阐明,利用这些基于密度的框架来了解激发态的理化性质是可行的,而且激发态的倾向性可能与基态的倾向性明显不同,有时甚至完全相反。据我们所知,这是首次利用基于密度的反应性框架来研究激发态。它将为未来处理光物理和光化学过程及转化中的实际问题提供大量机会。
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引用次数: 0
News and views (1 & 2) 新闻和观点(1 和 2)
Pub Date : 2024-02-01 DOI: 10.1007/s43673-024-00116-8
AAPPS Bulletin
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引用次数: 0
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AAPPS Bulletin
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