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Some observations on opacification in K2O-containing borosilicate glasses 含k2o硼硅酸盐玻璃混浊现象的一些观察
Pub Date : 1979-10-01 DOI: 10.1016/0390-5519(79)90027-9
H. Takashima
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引用次数: 0
Characterization of metastable tetragonal hafnia 亚稳四方铪的表征
Pub Date : 1979-10-01 DOI: 10.1016/0390-5519(79)90021-8
O. Hunter, R. Scheidecker, S. Tojo
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引用次数: 20
Grain boundary segregation of iron in polycrystalline magnesium oxide observed by STEM 多晶氧化镁中铁的晶界偏析
Pub Date : 1979-10-01 DOI: 10.1016/0390-5519(79)90020-6
T. Mitamura, E. Hall, W. Kingery, J. B. Sande
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引用次数: 19
Characterization of metastable tetragonal hafnia 亚稳四方铪的表征
Pub Date : 1979-10-01 DOI: 10.1016/0390-5519(79)90021-8
O. Hunter Jr., R.W. Scheidecker, Setsuo Tojo

Conditions for retaining metastable tetragonal HfO2 at room temperature were determined. Mechanical properties were measured as a function both of the fraction of retained metastable HfO2 and of the porosity. The metastable phase was retained by 1) thermal decomposition of pure Hf(OH)4 or HfOCl2 and 2) hot pressing of HfO2 + 1% Er2O3. The critical size for retaining pure tetragonal HfO2 at room temperature in a stress free condition is 100 Å, whereas the critical size for the 1% Er2O3 hot pressed composition is significantly larger. The elastic moduli were found to vary linearly with porosity and showed a small effect due to the metastable phase presence.

确定了在室温下保持亚稳态四角形氢氧化氢的条件。机械性能是作为保留的亚稳HfO2分数和孔隙率的函数来测量的。通过热分解纯Hf(OH)4或HfOCl2和热压HfO2 + 1% Er2O3来保持亚稳相。室温下无应力条件下保持纯四方HfO2的临界尺寸为100 Å,而1% Er2O3热压组合物的临界尺寸要大得多。弹性模量随孔隙率呈线性变化,由于亚稳相的存在,弹性模量的影响很小。
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引用次数: 20
Young's modulus-porosity relationship for alumina substrates 氧化铝基板的杨氏模量-孔隙率关系
Pub Date : 1979-10-01 DOI: 10.1016/0390-5519(79)90026-7
G. De Portu, P. Vincenzini
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引用次数: 8
Grain boundary segregation of iron in polycrystalline magnesium oxide observed by STEM 多晶氧化镁中铁的晶界偏析
Pub Date : 1979-10-01 DOI: 10.1016/0390-5519(79)90020-6
T. Mitamura, E.L. Hall, W.D. Kingery, J.B. Vander Sande

Utilizing X-ray microanalysis in samples studied with scanning transmission electron microscopy, substantial grain boundary segregation of Fe is found in grain boundaries in polycrystalline MgO. Samples studied contained between 540 and 5400 cation ppm Fe. Grain boundary segregation in the region within 200 Å of the boundary was found in all cases, with the amount of segregation increasing with increasing Fe content. Samples slow-cooled from 1500°C showed an increased amount of segregation attributed to continued diffusion during cooling. Samples quenched from 1100°C showed greater segregation than those quenched from 1500°C, consistent with space charge theory. In some samples precipitates were observed which are correlated with a low-temperature phase diagram for the solidus in the iron oxide-magnesium oxide system. In addition to Fe, grain boundary segregation of Ca and Si impurities in the samples was also observed.

利用扫描透射电子显微镜对样品进行x射线显微分析,发现多晶MgO的晶界中存在铁的晶界偏析。研究样品的铁含量在540到5400 ppm之间。在晶界200 Å以内的区域均存在晶界偏析,且偏析量随铁含量的增加而增加。从1500°C开始缓慢冷却的样品显示出由于冷却过程中持续扩散而增加的偏析量。1100℃淬火的样品比1500℃淬火的样品有更大的偏析,符合空间电荷理论。在一些样品中观察到与氧化铁-氧化镁体系中固相的低温相图相关的沉淀。除Fe外,还观察到样品中Ca和Si杂质的晶界偏析。
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引用次数: 19
The corrosion of tin oxide semiconducting glazes 氧化锡半导体釉的腐蚀
Pub Date : 1979-10-01 DOI: 10.1016/0390-5519(79)90025-5
G. Bagnasco, P. Pernice, P. Orsini
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引用次数: 3
Preparation and properties of new oxygen ion conductors for use at low temperatures 新型低温氧离子导体的制备及性能研究
Pub Date : 1979-10-01 DOI: 10.1016/0390-5519(79)90022-X
K. Keizer, M. Verkerk, A. Burggraaf
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引用次数: 28
Preparation and properties of new oxygen ion conductors for use at low temperatures 新型低温氧离子导体的制备及性能研究
Pub Date : 1979-10-01 DOI: 10.1016/0390-5519(79)90022-X
K. Keizer, M.J. Verkerk, A.J. Burggraaf

Two new systems, Bi2O3Er2O3 and ZrO2Y2O3(CaO)Bi2O3 were investigated. The first system has a homogeneous cubic, fluorite phase between 17.5 and 45.5 mol % Er2O3 and can be sintered to densities near 95% at 1200 K. At temperatures between 700 K and 1000 K the highest value of the a.c. oxygen ion conduction in this system is twice as much as the highest value found in the literature. In the second system concentrations of 1–3 mol % Bi2O3 act as an excellent sintering aid for ZrO2Y2O3 and ZrO2CaO samples which can be sintered to densities higher than 95% at temperatures of 1350 K. During this procedure a liquid ZrO2Bi2O3 phase exists from which Bi2O3 partly evaporates with increasing sintering time. The oxygen ion conduction is little affected by the Bi2O3-rich second phase. The influence of annealing procedures up to 1570 K on the conduction in the ZrO2Y2O3Bi2O3 system is small despite weight losses up to 4%.

研究了两种新体系Bi2O3Er2O3和ZrO2Y2O3(CaO)Bi2O3。第一个体系具有均匀的立方萤石相,Er2O3在17.5 ~ 45.5 mol %之间,在1200 K下烧结密度接近95%。在700 K和1000 K之间的温度下,该系统中交流氧离子传导的最高值是文献中发现的最高值的两倍。在第二种体系中,浓度为1-3 mol %的Bi2O3作为ZrO2Y2O3和ZrO2CaO样品的良好烧结助剂,在1350 K的温度下烧结密度高于95%。在此过程中,存在液态ZrO2Bi2O3相,随着烧结时间的延长,Bi2O3部分蒸发。富bi2o3第二相对氧离子的传导影响较小。当退火温度达到1570 K时,ZrO2Y2O3Bi2O3体系的导电性受到的影响很小,尽管重量损失高达4%。
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引用次数: 28
The corrosion of tin oxide semiconducting glazes 氧化锡半导体釉的腐蚀
Pub Date : 1979-10-01 DOI: 10.1016/0390-5519(79)90025-5
G. Bagnasco, P. Pernice, P.Giordano Orsini

An SnO2Sb2O5 glaze, which seems the most promising among semiconducting porcelain glazes for high voltage applications, has been operated as electrode in Na2SO4 solution, to study under controlled conditions, its corrosion behaviour. The morphology of the corrosion has been observed by microscopy. Metallic tin produced by electrochemical reduction has been identified by X-ray diffraction.

SnO2Sb2O5釉料作为电极在Na2SO4溶液中工作,研究了其在受控条件下的腐蚀行为。用显微镜观察了腐蚀的形貌。用x射线衍射鉴定了电化学还原法制备的金属锡。
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引用次数: 3
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Ceramurgia International
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