No matter which area of GaAs (III–V) technology may be your specialty, the best of the best will be at this year's IEEE-sponsored GaAs IC Symposium. The 12th Annual event will be held October 7–10th in New Orleans, LA. The jam-packed program of 85 invited and contributed papers, and lively noontime panels, carries a distinctively global flavour, underscoring the relevance of this year's dramatic world changes to our critically important international industry.
There exists an increasing interest in the development of low damage, dry etch processes for III–V materials. For the etching of GaAs, a wide range of gases has been employed, including: Cl2, BCl3, CCl4, SiCl4, CCl2F2 with and without various mixtures of O2, H2, He and Ar. Damage is of particular concern in devices such as MESFETs and HEMTs but it is possible to reduce it by achieving developing etch rate processes (and therefore, shorter etching times) and lower bombardment energies. Oxford Plasma Technology has been involved in the development of CCl2F2/He etching of GaAs by ECR based on the work of Rebecca Cheung1 in which the low damage capabilities of ECR etching over RIE were proved.
Recently, active research for the improvement of MISFET, HEMT, HBT, RHET and OEICs has demanded development of a semi-insulating InP substrate on which these devices can be fabricated. In the concluding part of this article, we learn of the growth characteristics, such as purity and striation of the Sumitomo VCZ technique. The report then details results obtained from a comparison of VPE InP and InGaAs epilayers grown on VCZ and LEC wafers.
Growth and characterisation of alternating epilayers have renewed interest in self-diffusion studies of III–V compounds. A collaborative project between CSMA Manchester and the University of Nottingham has investigated the extent of interdiffusion as a function of depth across GaAs-AIAs interfaces in MBE epilayers. SIMS and TEM have given direct evidence of a depth dependency and the enhancement of interdiffusion near the surface is believed to be caused by the diffusion of Group III vacancies from the surface.
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