Pub Date : 1990-09-01DOI: 10.1016/0959-3527(90)90199-4
T. Kawase, T. Araki, Y. Miura, T. Iwasaki, N. Yamabayashi, M. Tatsumi, S. Murai, K. Tada, S. Akai
InP single crystals are primarily used as the conductive substrates for optical devices such as LEDs and lasers etc, in optoelectronics. Recently, active research for the improvement of MISFET, HEMT, HBT, RHET and OEICs has been demanding the development of a semi-insulating, SI, InP substrate on which these devices can be fabricated. The improvement of quality and reliability of these devices is being vigorously promoted, so high purity and low defect density are required of InP single crystal substrates. At Sumitomo Electric, the LEC method to grow InP single crystals with low defect density has been developed.
{"title":"High quality InP single crystal from Sumitomo electric","authors":"T. Kawase, T. Araki, Y. Miura, T. Iwasaki, N. Yamabayashi, M. Tatsumi, S. Murai, K. Tada, S. Akai","doi":"10.1016/0959-3527(90)90199-4","DOIUrl":"https://doi.org/10.1016/0959-3527(90)90199-4","url":null,"abstract":"<div><p>InP single crystals are primarily used as the conductive substrates for optical devices such as LEDs and lasers etc, in optoelectronics. Recently, active research for the improvement of MISFET, HEMT, HBT, RHET and OEICs has been demanding the development of a semi-insulating, SI, InP substrate on which these devices can be fabricated. The improvement of quality and reliability of these devices is being vigorously promoted, so high purity and low defect density are required of InP single crystal substrates. At Sumitomo Electric, the LEC method to grow InP single crystals with low defect density has been developed.</p></div>","PeriodicalId":100494,"journal":{"name":"Euro III-Vs Review","volume":"3 5","pages":"Pages 19-21"},"PeriodicalIF":0.0,"publicationDate":"1990-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0959-3527(90)90199-4","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91759898","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-09-01DOI: 10.1016/0959-3527(90)90205-8
Kenji Gamo, Susumu Namba
“Soon all semiconductor devices could be made this way” is a claim often made for focussed ion beam technology. As the Osaka University team relate in this overview, numerous labs around the world have used FIB to dope, deposit, etch and define semiconductor, and other, films to microfabricate circuits and devices. FIB has yet to become a routine method but the techniques under this banner hold much promise for the production of next generation devices.
{"title":"Microfabrication using focused ion beams","authors":"Kenji Gamo, Susumu Namba","doi":"10.1016/0959-3527(90)90205-8","DOIUrl":"https://doi.org/10.1016/0959-3527(90)90205-8","url":null,"abstract":"<div><p>“Soon all semiconductor devices could be made this way” is a claim often made for focussed ion beam technology. As the Osaka University team relate in this overview, numerous labs around the world have used FIB to dope, deposit, etch and define semiconductor, and other, films to microfabricate circuits and devices. FIB has yet to become a routine method but the techniques under this banner hold much promise for the production of next generation devices.</p></div>","PeriodicalId":100494,"journal":{"name":"Euro III-Vs Review","volume":"3 5","pages":"Pages 41-42"},"PeriodicalIF":0.0,"publicationDate":"1990-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0959-3527(90)90205-8","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91767016","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-09-01DOI: 10.1016/0959-3527(90)90202-5
G. Jacob, R. Coquille, Y. Toudic
In a joint research programme, Metaux Speciaux and CNET Lannion, France, have gained considerable insight into the behaviour of impurities in InP. As a result of a systematic series of chemical and electrical measurements, the growth of SI crystals with a very low concentration of the deep acceptor (Fe) at a level of about 1016cm−3 can now be routinely achieved.
{"title":"A corrlation of chemical & electrical properties of polycrystal & single crystal InP","authors":"G. Jacob, R. Coquille, Y. Toudic","doi":"10.1016/0959-3527(90)90202-5","DOIUrl":"https://doi.org/10.1016/0959-3527(90)90202-5","url":null,"abstract":"<div><p>In a joint research programme, Metaux Speciaux and CNET Lannion, France, have gained considerable insight into the behaviour of impurities in InP. As a result of a systematic series of chemical and electrical measurements, the growth of SI crystals with a very low concentration of the deep acceptor (Fe) at a level of about 10<sup>16</sup>cm<sup>−3</sup> can now be routinely achieved.</p></div>","PeriodicalId":100494,"journal":{"name":"Euro III-Vs Review","volume":"3 5","pages":"Pages 28-29"},"PeriodicalIF":0.0,"publicationDate":"1990-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0959-3527(90)90202-5","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90124654","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-09-01DOI: 10.1016/0959-3527(90)90203-6
R.J. Hillard, H.L. Berkowitz, J.M. Heddleson, R.G. Mazur, P. Rai-Choudhury
In the first part of this two part article by Solid State Measurements, Inc., Pittsburgh, PA, USA, the point contact current voltage (PCIV) technique for characterizing III–V semiconductors was introduced. This technique involves stepping specially conditioned point contacts down a beveled surface into the sample. The SSM 350 III–V and Silicon Characterization System is a computer controlled, automatic profiling system for silicon, germanium, and III–V, II–VI, and IV–IV binary and ternary compound semiconductor systems.
在这篇由固态测量公司(Solid State Measurements, Inc.， Pittsburgh, PA, USA)撰写的两部分文章的第一部分中，介绍了用于表征III-V半导体的点接触电流电压(PCIV)技术。该技术涉及将特殊条件的点接触沿斜面进入样品。SSM 350 III-V和硅表征系统是一种计算机控制的自动分析系统，用于硅，锗和III-V, II-VI和IV-IV二元和三元化合物半导体系统。
{"title":"Profiling of compound semiconductors using point contact techniques: Part 2","authors":"R.J. Hillard, H.L. Berkowitz, J.M. Heddleson, R.G. Mazur, P. Rai-Choudhury","doi":"10.1016/0959-3527(90)90203-6","DOIUrl":"10.1016/0959-3527(90)90203-6","url":null,"abstract":"<div><p>In the first part of this two part article by Solid State Measurements, Inc., Pittsburgh, PA, USA, the point contact current voltage (PCIV) technique for characterizing III–V semiconductors was introduced. This technique involves stepping specially conditioned point contacts down a beveled surface into the sample. The SSM 350 III–V and Silicon Characterization System is a computer controlled, automatic profiling system for silicon, germanium, and III–V, II–VI, and IV–IV binary and ternary compound semiconductor systems.</p></div>","PeriodicalId":100494,"journal":{"name":"Euro III-Vs Review","volume":"3 5","pages":"Pages 31-33"},"PeriodicalIF":0.0,"publicationDate":"1990-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0959-3527(90)90203-6","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87669431","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-08-01DOI: 10.1016/0959-3527(90)90112-7
Charles Tu (Prof.)
{"title":"University of California at San Diego hosts MBE-VI","authors":"Charles Tu (Prof.)","doi":"10.1016/0959-3527(90)90112-7","DOIUrl":"10.1016/0959-3527(90)90112-7","url":null,"abstract":"","PeriodicalId":100494,"journal":{"name":"Euro III-Vs Review","volume":"3 4","pages":"Page 16"},"PeriodicalIF":0.0,"publicationDate":"1990-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0959-3527(90)90112-7","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77128747","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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