首页 > 最新文献

IEEE Solid-State Circuits Magazine最新文献

英文 中文
Miller’s Wrong Half-Plane Zero [Shop Talk: What you didn’t Learn in School] 米勒错误的半平面零[商店谈话:你在学校没有学到的东西]
Pub Date : 2025-06-19 DOI: 10.1109/MSSC.2025.3562109
Chris Mangelsdorf
The right half-plane (RHP) zero associated with Miller frequency compensation in feedback loops is well known. But much of what we've learned about it is incomplete, misleading and -occasionally- wrong. This column explores the fundamental nature of the RHP zero and the circuit techniques that have evolved to deal with it. Emphasis is on intuitive understanding of the phenomena, because it reveals the flaws that arise in a purely mathematical analysis.
反馈回路中与米勒频率补偿相关的右半平面(RHP)零点是众所周知的。但我们对它的了解大多是不完整的、误导性的,有时甚至是错误的。本专栏将探讨RHP零的基本性质以及为处理它而发展起来的电路技术。重点是对现象的直观理解,因为它揭示了纯数学分析中出现的缺陷。
{"title":"Miller’s Wrong Half-Plane Zero [Shop Talk: What you didn’t Learn in School]","authors":"Chris Mangelsdorf","doi":"10.1109/MSSC.2025.3562109","DOIUrl":"https://doi.org/10.1109/MSSC.2025.3562109","url":null,"abstract":"The right half-plane (RHP) zero associated with Miller frequency compensation in feedback loops is well known. But much of what we've learned about it is incomplete, misleading and -occasionally- wrong. This column explores the fundamental nature of the RHP zero and the circuit techniques that have evolved to deal with it. Emphasis is on intuitive understanding of the phenomena, because it reveals the flaws that arise in a purely mathematical analysis.","PeriodicalId":100636,"journal":{"name":"IEEE Solid-State Circuits Magazine","volume":"17 2","pages":"19-29"},"PeriodicalIF":0.0,"publicationDate":"2025-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144323026","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IEEE Fellow Program [IEEE News] IEEE Fellow Program [IEEE新闻]
Pub Date : 2025-06-19 DOI: 10.1109/MSSC.2025.3564026
Wanda Gass;Howard Luong
Provides society information that may include news, reviews or technical notes that should be of interest to practitioners and researchers.
提供社会信息,可能包括新闻,评论或技术笔记,从业者和研究人员应该感兴趣。
{"title":"IEEE Fellow Program [IEEE News]","authors":"Wanda Gass;Howard Luong","doi":"10.1109/MSSC.2025.3564026","DOIUrl":"https://doi.org/10.1109/MSSC.2025.3564026","url":null,"abstract":"Provides society information that may include news, reviews or technical notes that should be of interest to practitioners and researchers.","PeriodicalId":100636,"journal":{"name":"IEEE Solid-State Circuits Magazine","volume":"17 2","pages":"127-127"},"PeriodicalIF":0.0,"publicationDate":"2025-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11044957","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144323097","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Women in Circuits Bingo Networking Event at ISSCC 2025 [Women in Circuits Corner] 在ISSCC 2025举办的女性参与电路宾果网络活动[女性参与电路角]
Pub Date : 2025-06-19 DOI: 10.1109/MSSC.2025.3563914
Kwantae Kim;Ben Keller
Provides society information that may include news, reviews or technical notes that should be of interest to practitioners and researchers.
提供社会信息,可能包括新闻,评论或技术笔记,从业者和研究人员应该感兴趣。
{"title":"Women in Circuits Bingo Networking Event at ISSCC 2025 [Women in Circuits Corner]","authors":"Kwantae Kim;Ben Keller","doi":"10.1109/MSSC.2025.3563914","DOIUrl":"https://doi.org/10.1109/MSSC.2025.3563914","url":null,"abstract":"Provides society information that may include news, reviews or technical notes that should be of interest to practitioners and researchers.","PeriodicalId":100636,"journal":{"name":"IEEE Solid-State Circuits Magazine","volume":"17 2","pages":"84-84"},"PeriodicalIF":0.0,"publicationDate":"2025-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11044963","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144323141","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IEEE SSCS ENIS SBC Preuniversity Program: Igniting Passion for Electronics [Chapters] IEEE SSCS ENIS SBC大学预科课程:点燃电子激情[章节]
Pub Date : 2025-06-19 DOI: 10.1109/MSSC.2025.3564428
Hadil Khelifi
Provides society information that may include news, reviews or technical notes that should be of interest to practitioners and researchers.
提供社会信息,可能包括新闻,评论或技术笔记,从业者和研究人员应该感兴趣。
{"title":"IEEE SSCS ENIS SBC Preuniversity Program: Igniting Passion for Electronics [Chapters]","authors":"Hadil Khelifi","doi":"10.1109/MSSC.2025.3564428","DOIUrl":"https://doi.org/10.1109/MSSC.2025.3564428","url":null,"abstract":"Provides society information that may include news, reviews or technical notes that should be of interest to practitioners and researchers.","PeriodicalId":100636,"journal":{"name":"IEEE Solid-State Circuits Magazine","volume":"17 2","pages":"92-92"},"PeriodicalIF":0.0,"publicationDate":"2025-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11044949","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144323165","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
SRAM- and eDRAM-Based Compute-in-Memory Designs, Accelerators, and Evaluation Frameworks: Macro-Level and System-Level Optimization and Evaluation 基于SRAM和edram的内存计算设计、加速器和评估框架:宏观级和系统级优化与评估
Pub Date : 2025-06-19 DOI: 10.1109/MSSC.2025.3549358
Yifan He;Xiaofeng Hu;Hongyang Jia;Jae-sun Seo
Compute-in-memory (CIM) has shown great potential in efficiently processing high-dimensional data over traditional von Neumann architectures, becoming a candidate computing fabric for next-generation AI. This has motivated the rapid development of CIM prototypes and deployments in different approaches, among which SRAM- and eDRAM-based CIM have drawn significant attention due to their flexibility and feasibility. At the time of a decade after the first CIM implementation, it is necessary to review the technical approaches and revisit the new findings behind complicated prototypes. Macro-level innovations such as precise current-based computation and deeply coupled algorithm-circuit co-optimization open up the headroom for efficiency vs. signal-to-noise ratio (SNR) tradeoffs in analog and digital CIM, respectively. Furthermore, diverse architectural configurations integrating CIM macros into systemon- chips have demonstrated scale-out of computing capacity. However, architectural integration of CIM still faces challenges from digital peripherals, memory reloading, and communication. These necessitate hardware-software co-designed mappings and, more importantly, comprehensive and fair evaluation frameworks.
内存计算(CIM)在高效处理高维数据方面比传统的冯·诺依曼架构显示出巨大的潜力,成为下一代人工智能的候选计算结构。这推动了CIM原型的快速发展和不同方法的部署,其中基于SRAM和edram的CIM由于其灵活性和可行性而引起了极大的关注。在第一个CIM实现十年之后,有必要回顾技术方法并重新审视复杂原型背后的新发现。宏观层面的创新,如精确的基于电流的计算和深度耦合算法-电路协同优化,分别为模拟和数字CIM的效率与信噪比(SNR)权衡开辟了空间。此外,将CIM宏集成到系统芯片中的各种体系结构配置已经证明了计算能力的横向扩展。然而,CIM的体系结构集成仍然面临来自数字外设、内存重新加载和通信的挑战。这就需要软硬件协同设计映射,更重要的是,需要全面而公平的评估框架。
{"title":"SRAM- and eDRAM-Based Compute-in-Memory Designs, Accelerators, and Evaluation Frameworks: Macro-Level and System-Level Optimization and Evaluation","authors":"Yifan He;Xiaofeng Hu;Hongyang Jia;Jae-sun Seo","doi":"10.1109/MSSC.2025.3549358","DOIUrl":"https://doi.org/10.1109/MSSC.2025.3549358","url":null,"abstract":"Compute-in-memory (CIM) has shown great potential in efficiently processing high-dimensional data over traditional von Neumann architectures, becoming a candidate computing fabric for next-generation AI. This has motivated the rapid development of CIM prototypes and deployments in different approaches, among which SRAM- and eDRAM-based CIM have drawn significant attention due to their flexibility and feasibility. At the time of a decade after the first CIM implementation, it is necessary to review the technical approaches and revisit the new findings behind complicated prototypes. Macro-level innovations such as precise current-based computation and deeply coupled algorithm-circuit co-optimization open up the headroom for efficiency vs. signal-to-noise ratio (SNR) tradeoffs in analog and digital CIM, respectively. Furthermore, diverse architectural configurations integrating CIM macros into systemon- chips have demonstrated scale-out of computing capacity. However, architectural integration of CIM still faces challenges from digital peripherals, memory reloading, and communication. These necessitate hardware-software co-designed mappings and, more importantly, comprehensive and fair evaluation frameworks.","PeriodicalId":100636,"journal":{"name":"IEEE Solid-State Circuits Magazine","volume":"17 2","pages":"39-48"},"PeriodicalIF":0.0,"publicationDate":"2025-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144323200","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design and Optimization of Efficient Digital Machine Learning Accelerators: An overview of architecture choices, efficient quantization, sparsity exploration, and system integration techniques 高效数字机器学习加速器的设计与优化:架构选择、高效量化、稀疏性探索和系统集成技术概述
Pub Date : 2025-06-19 DOI: 10.1109/MSSC.2025.3549361
Wei Tang;Sung-Gun Cho;Jie-Fang Zhang;Zhengya Zhang
Digital machine learning (ML) accelerators are popular and widely used. We provide an overview of the SIMD and systolic array architectures that form the foundation of many accelerator designs. The demand for higher compute density, energy efficiency, and scalability has been increasing. To address these needs, new ML accelerator designs have adopted a range of techniques, including advanced architectural design, more efficient quantization, exploiting data-level sparsity, and leveraging new integration technologies. For each of these techniques, we review the common approaches, identify the design tradeoffs, and discuss their implications.
数字机器学习(ML)加速器是流行和广泛使用的。我们概述了SIMD和收缩阵列架构,它们构成了许多加速器设计的基础。对更高的计算密度、能源效率和可伸缩性的需求一直在增加。为了满足这些需求,新的ML加速器设计采用了一系列技术,包括先进的架构设计、更有效的量化、利用数据级稀疏性和利用新的集成技术。对于每一种技术,我们回顾了常见的方法,确定了设计权衡,并讨论了它们的含义。
{"title":"Design and Optimization of Efficient Digital Machine Learning Accelerators: An overview of architecture choices, efficient quantization, sparsity exploration, and system integration techniques","authors":"Wei Tang;Sung-Gun Cho;Jie-Fang Zhang;Zhengya Zhang","doi":"10.1109/MSSC.2025.3549361","DOIUrl":"https://doi.org/10.1109/MSSC.2025.3549361","url":null,"abstract":"Digital machine learning (ML) accelerators are popular and widely used. We provide an overview of the SIMD and systolic array architectures that form the foundation of many accelerator designs. The demand for higher compute density, energy efficiency, and scalability has been increasing. To address these needs, new ML accelerator designs have adopted a range of techniques, including advanced architectural design, more efficient quantization, exploiting data-level sparsity, and leveraging new integration technologies. For each of these techniques, we review the common approaches, identify the design tradeoffs, and discuss their implications.","PeriodicalId":100636,"journal":{"name":"IEEE Solid-State Circuits Magazine","volume":"17 2","pages":"30-38"},"PeriodicalIF":0.0,"publicationDate":"2025-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144323243","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
SSCS Winter 2025 AdCom Meeting [Society News] SSCS 2025年冬季AdCom会议[社会新闻]
Pub Date : 2025-06-19 DOI: 10.1109/MSSC.2025.3563742
Danielle Marinese
Provides society information that may include news, reviews or technical notes that should be of interest to practitioners and researchers.
提供社会信息,可能包括新闻,评论或技术笔记,从业者和研究人员应该感兴趣。
{"title":"SSCS Winter 2025 AdCom Meeting [Society News]","authors":"Danielle Marinese","doi":"10.1109/MSSC.2025.3563742","DOIUrl":"https://doi.org/10.1109/MSSC.2025.3563742","url":null,"abstract":"Provides society information that may include news, reviews or technical notes that should be of interest to practitioners and researchers.","PeriodicalId":100636,"journal":{"name":"IEEE Solid-State Circuits Magazine","volume":"17 2","pages":"79-79"},"PeriodicalIF":0.0,"publicationDate":"2025-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11044961","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144323244","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Sparsity-Aware Hardware: From Overheads to Performance Benefits 支持稀疏的硬件:从开销到性能优势
Pub Date : 2025-06-19 DOI: 10.1109/MSSC.2025.3549709
Man Shi;Adrian Kneip;Nicolas Chauvaux;Jiacong Sun;Charlotte Frenkel;Marian Verhelst
As artificial intelligence (AI) continues to transform multiple sectors, its exponential growth in computational demands presents significant challenges for hardware infrastructure. This article examines sparsity, the prevalence of zeros in AI workloads, as a promising approach to address these challenges. While sparsity offers potential efficiency gains, its practical implementation requires careful consideration of hardware constraints and computational overheads. Therefore, this article cooperates with a virtual performance roofline model to analyze various sparsity techniques and their associated tradeoffs, aiming to bridge the gap between theoretical potential and practical implementation in AI accelerator design.
随着人工智能(AI)继续改变多个部门,其计算需求的指数增长对硬件基础设施提出了重大挑战。本文研究了稀疏性,即人工智能工作负载中普遍存在的零,作为解决这些挑战的一种有希望的方法。虽然稀疏性提供了潜在的效率提升,但它的实际实现需要仔细考虑硬件约束和计算开销。因此,本文结合虚拟性能屋顶线模型来分析各种稀疏性技术及其相关权衡,旨在弥合人工智能加速器设计中理论潜力与实际实现之间的差距。
{"title":"Sparsity-Aware Hardware: From Overheads to Performance Benefits","authors":"Man Shi;Adrian Kneip;Nicolas Chauvaux;Jiacong Sun;Charlotte Frenkel;Marian Verhelst","doi":"10.1109/MSSC.2025.3549709","DOIUrl":"https://doi.org/10.1109/MSSC.2025.3549709","url":null,"abstract":"As artificial intelligence (AI) continues to transform multiple sectors, its exponential growth in computational demands presents significant challenges for hardware infrastructure. This article examines sparsity, the prevalence of zeros in AI workloads, as a promising approach to address these challenges. While sparsity offers potential efficiency gains, its practical implementation requires careful consideration of hardware constraints and computational overheads. Therefore, this article cooperates with a virtual performance roofline model to analyze various sparsity techniques and their associated tradeoffs, aiming to bridge the gap between theoretical potential and practical implementation in AI accelerator design.","PeriodicalId":100636,"journal":{"name":"IEEE Solid-State Circuits Magazine","volume":"17 2","pages":"61-71"},"PeriodicalIF":0.0,"publicationDate":"2025-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144323247","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
An Update on Society Activities: Spring 2025 [President’s Corner] 社会活动动态:2025年春季[总统角]
Pub Date : 2025-06-19 DOI: 10.1109/MSSC.2025.3563739
William Bowhill;Bill Bowhill
{"title":"An Update on Society Activities: Spring 2025 [President’s Corner]","authors":"William Bowhill;Bill Bowhill","doi":"10.1109/MSSC.2025.3563739","DOIUrl":"https://doi.org/10.1109/MSSC.2025.3563739","url":null,"abstract":"","PeriodicalId":100636,"journal":{"name":"IEEE Solid-State Circuits Magazine","volume":"17 2","pages":"5-7"},"PeriodicalIF":0.0,"publicationDate":"2025-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11044932","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144323249","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Michiel S. J. Steyaert Receives the 2025 IEEE Donald O. Pederson Award in Solid-State Circuits [Awards] michael S. J. Steyaert获得2025年IEEE固态电路Donald O. Pederson奖
Pub Date : 2025-06-19 DOI: 10.1109/MSSC.2025.3564080
Danielle Marinese
Provides society information that may include news, reviews or technical notes that should be of interest to practitioners and researchers.
提供社会信息,可能包括新闻,评论或技术笔记,从业者和研究人员应该感兴趣。
{"title":"Michiel S. J. Steyaert Receives the 2025 IEEE Donald O. Pederson Award in Solid-State Circuits [Awards]","authors":"Danielle Marinese","doi":"10.1109/MSSC.2025.3564080","DOIUrl":"https://doi.org/10.1109/MSSC.2025.3564080","url":null,"abstract":"Provides society information that may include news, reviews or technical notes that should be of interest to practitioners and researchers.","PeriodicalId":100636,"journal":{"name":"IEEE Solid-State Circuits Magazine","volume":"17 2","pages":"104-104"},"PeriodicalIF":0.0,"publicationDate":"2025-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11044936","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144322961","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
期刊
IEEE Solid-State Circuits Magazine
全部 Acc. Chem. Res. ACS Applied Bio Materials ACS Appl. Electron. Mater. ACS Appl. Energy Mater. ACS Appl. Mater. Interfaces ACS Appl. Nano Mater. ACS Appl. Polym. Mater. ACS BIOMATER-SCI ENG ACS Catal. ACS Cent. Sci. ACS Chem. Biol. ACS Chemical Health & Safety ACS Chem. Neurosci. ACS Comb. Sci. ACS Earth Space Chem. ACS Energy Lett. ACS Infect. Dis. ACS Macro Lett. ACS Mater. Lett. ACS Med. Chem. Lett. ACS Nano ACS Omega ACS Photonics ACS Sens. ACS Sustainable Chem. Eng. ACS Synth. Biol. Anal. Chem. BIOCHEMISTRY-US Bioconjugate Chem. BIOMACROMOLECULES Chem. Res. Toxicol. Chem. Rev. Chem. Mater. CRYST GROWTH DES ENERG FUEL Environ. Sci. Technol. Environ. Sci. Technol. Lett. Eur. J. Inorg. Chem. IND ENG CHEM RES Inorg. Chem. J. Agric. Food. Chem. J. Chem. Eng. Data J. Chem. Educ. J. Chem. Inf. Model. J. Chem. Theory Comput. J. Med. Chem. J. Nat. Prod. J PROTEOME RES J. Am. Chem. Soc. LANGMUIR MACROMOLECULES Mol. Pharmaceutics Nano Lett. Org. Lett. ORG PROCESS RES DEV ORGANOMETALLICS J. Org. Chem. J. Phys. Chem. J. Phys. Chem. A J. Phys. Chem. B J. Phys. Chem. C J. Phys. Chem. Lett. Analyst Anal. Methods Biomater. Sci. Catal. Sci. Technol. Chem. Commun. Chem. Soc. Rev. CHEM EDUC RES PRACT CRYSTENGCOMM Dalton Trans. Energy Environ. Sci. ENVIRON SCI-NANO ENVIRON SCI-PROC IMP ENVIRON SCI-WAT RES Faraday Discuss. Food Funct. Green Chem. Inorg. Chem. Front. Integr. Biol. J. Anal. At. Spectrom. J. Mater. Chem. A J. Mater. Chem. B J. Mater. Chem. C Lab Chip Mater. Chem. Front. Mater. Horiz. MEDCHEMCOMM Metallomics Mol. Biosyst. Mol. Syst. Des. Eng. Nanoscale Nanoscale Horiz. Nat. Prod. Rep. New J. Chem. Org. Biomol. Chem. Org. Chem. Front. PHOTOCH PHOTOBIO SCI PCCP Polym. Chem.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1