Pub Date : 2024-07-01DOI: 10.1109/TMAT.2024.3420822
Sergey Voronin;Christophe Vallée
In this short review, the evolution of plasma etching technologies used in microelectronics fabrication since the discovery of the reactive ion etching process 50 years ago is explored. These evolutions are first discussed from a process engineering point of view. After giving some examples of present and future challenges, it is described how the precision of the etching can be improved by using innovative solutions such as pulsing plasmas and cyclic processes. These changes are then discussed in a second section from a design point of view for industrial equipment and components. In particular, the tool design evolution is discussed by addressing its generic hardware components, most common plasma sources, power coupling efficiency and matching networks.
{"title":"50 Years of Reactive Ion Etching in Microelectronics","authors":"Sergey Voronin;Christophe Vallée","doi":"10.1109/TMAT.2024.3420822","DOIUrl":"https://doi.org/10.1109/TMAT.2024.3420822","url":null,"abstract":"In this short review, the evolution of plasma etching technologies used in microelectronics fabrication since the discovery of the reactive ion etching process 50 years ago is explored. These evolutions are first discussed from a process engineering point of view. After giving some examples of present and future challenges, it is described how the precision of the etching can be improved by using innovative solutions such as pulsing plasmas and cyclic processes. These changes are then discussed in a second section from a design point of view for industrial equipment and components. In particular, the tool design evolution is discussed by addressing its generic hardware components, most common plasma sources, power coupling efficiency and matching networks.","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"1 ","pages":"49-63"},"PeriodicalIF":0.0,"publicationDate":"2024-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141965889","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This article aims to comprehensively explore silicon, glass, organic, and RDL (Redistribution Layer) interposers, comparing their technological features, advantages, and associated challenges. Additionally, a pioneering technology, termed Hyper RDL interposer (HRDL), which integrates temporary bonding and low-temperature hybrid bonding techniques to create an RDL interposer with low warpage, high layer count, and minimal thermal accumulation effects, is introduced through new research results. The forthcoming discussion will rigorously examine the impact of interposer technologies in the semiconductor industry and advanced technology sectors, facilitating progress in critical areas, including high-performance computing (HPC), artificial intelligence (AI), and high-bandwidth applications.
{"title":"The HRDL Interposer Technology Using Metal/Polymer Hybrid Bonding and Its Characteristics","authors":"Yu-Lun Liu;Chien-Kang Hsiung;Tzu-Han Sun;Chun-Ta Li;Yuan-Chiu Huang;Yu-Tao Yang;Kuan-Neng Chen","doi":"10.1109/TMAT.2024.3417888","DOIUrl":"https://doi.org/10.1109/TMAT.2024.3417888","url":null,"abstract":"This article aims to comprehensively explore silicon, glass, organic, and RDL (Redistribution Layer) interposers, comparing their technological features, advantages, and associated challenges. Additionally, a pioneering technology, termed Hyper RDL interposer (HRDL), which integrates temporary bonding and low-temperature hybrid bonding techniques to create an RDL interposer with low warpage, high layer count, and minimal thermal accumulation effects, is introduced through new research results. The forthcoming discussion will rigorously examine the impact of interposer technologies in the semiconductor industry and advanced technology sectors, facilitating progress in critical areas, including high-performance computing (HPC), artificial intelligence (AI), and high-bandwidth applications.","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"1 ","pages":"15-22"},"PeriodicalIF":0.0,"publicationDate":"2024-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141624089","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-18DOI: 10.1109/TMAT.2024.3416156
Liese B. Hubrechtsen;Philippe M. Vereecken;Louis L. De Taeye
The Internet-of-Things (IoT) will require innovative solutions to enable power autonomy in miniaturized nodes. One possible strategy for these applications is to harvest energy using the thermogalvanic effect, which converts heat to electricity via an electrochemical reaction. In this work, three device concepts for thermogalvanic harvesting with thin-film Li-ion materials were considered, and a practical experiment demonstrating the operational limitations was presented for each approach. All demonstrations were executed using thin-film Li $_{4}$ Ti $_{5}$ O $_{12}$ (LTO) electrodes, which possess attractive thermogalvanic and kinetic properties. The first device concept was a thermogalvanic cell. This component harvests energy via the application and removal of a temperature difference between two identical LTO electrodes. In addition, a hybrid Thermally Regenerative Electrochemical Cycling (TREC) device was studied. Here, a cell with an LTO working electrode of variable temperature and a Li metal counter-electrode at constant temperature is charged at one LTO temperature and discharged at another temperature. The last concept was a thin-film TREC cell, which contains an LTO working electrode, a LiPON solid electrolyte, and a Li metal counter-electrode. Harvesting is accomplished by changing the temperature of the entire cell between the charge and discharge steps. By presenting an overview of the advantages and pitfalls of different device concepts, this work is a first step in the development of novel thermogalvanic harvesting components based on thin-film Li-ion materials.
{"title":"Thermogalvanic Harvesting With Thin-Film Li-Ion Materials: Experimental Reflections on Device Concepts","authors":"Liese B. Hubrechtsen;Philippe M. Vereecken;Louis L. De Taeye","doi":"10.1109/TMAT.2024.3416156","DOIUrl":"https://doi.org/10.1109/TMAT.2024.3416156","url":null,"abstract":"The Internet-of-Things (IoT) will require innovative solutions to enable power autonomy in miniaturized nodes. One possible strategy for these applications is to harvest energy using the thermogalvanic effect, which converts heat to electricity via an electrochemical reaction. In this work, three device concepts for thermogalvanic harvesting with thin-film Li-ion materials were considered, and a practical experiment demonstrating the operational limitations was presented for each approach. All demonstrations were executed using thin-film Li\u0000<inline-formula><tex-math>$_{4}$</tex-math></inline-formula>\u0000Ti\u0000<inline-formula><tex-math>$_{5}$</tex-math></inline-formula>\u0000O\u0000<inline-formula><tex-math>$_{12}$</tex-math></inline-formula>\u0000 (LTO) electrodes, which possess attractive thermogalvanic and kinetic properties. The first device concept was a thermogalvanic cell. This component harvests energy via the application and removal of a temperature difference between two identical LTO electrodes. In addition, a hybrid Thermally Regenerative Electrochemical Cycling (TREC) device was studied. Here, a cell with an LTO working electrode of variable temperature and a Li metal counter-electrode at constant temperature is charged at one LTO temperature and discharged at another temperature. The last concept was a thin-film TREC cell, which contains an LTO working electrode, a LiPON solid electrolyte, and a Li metal counter-electrode. Harvesting is accomplished by changing the temperature of the entire cell between the charge and discharge steps. By presenting an overview of the advantages and pitfalls of different device concepts, this work is a first step in the development of novel thermogalvanic harvesting components based on thin-film Li-ion materials.","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"1 ","pages":"68-81"},"PeriodicalIF":0.0,"publicationDate":"2024-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142091008","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Antiferromagnetic spintronics, leveraging the distinct properties of antiferromagnetic materials, represents a rapidly advancing frontier in the realm of magnetic memory devices. Theoretical and experimental research has significantly propelled this field forward. Notably, antiferromagnetic materials, with their rapid spin dynamics and reduced sensitivity to stray magnetic fields, emerge as superior candidates for spintronic memory applications compared to traditional ferromagnets. This paper begins by evaluating the potential of antiferromagnetism as a robust spin source and its inherent advantage in field-free switching, pivotal for enhancing memory device efficiency. We then critically review the innovative mechanisms for manipulating and detecting the magnetic states of antiferromagnets, underscoring their integral role in the functional advancement of magnetic memory technologies. Subsequently, we explore a range of magnetic memory devices that integrate antiferromagnets into various functional layers, showcasing their versatility. The final section projects the evolving landscape of antiferromagnetic applications within magnetic memory devices, emphasizing their promising trajectory in revolutionizing memory storage solutions.
{"title":"Antiferromagnetic Spintronics in Magnetic Memory Devices","authors":"Weijian Qi;Hui Zhang;Lu Chen;Ao Du;Dongyao Zheng;Yinan Xiao;Daming Tian;Fengxia Hu;Baogen Shen;Jirong Sun;Weisheng Zhao","doi":"10.1109/TMAT.2024.3415591","DOIUrl":"https://doi.org/10.1109/TMAT.2024.3415591","url":null,"abstract":"Antiferromagnetic spintronics, leveraging the distinct properties of antiferromagnetic materials, represents a rapidly advancing frontier in the realm of magnetic memory devices. Theoretical and experimental research has significantly propelled this field forward. Notably, antiferromagnetic materials, with their rapid spin dynamics and reduced sensitivity to stray magnetic fields, emerge as superior candidates for spintronic memory applications compared to traditional ferromagnets. This paper begins by evaluating the potential of antiferromagnetism as a robust spin source and its inherent advantage in field-free switching, pivotal for enhancing memory device efficiency. We then critically review the innovative mechanisms for manipulating and detecting the magnetic states of antiferromagnets, underscoring their integral role in the functional advancement of magnetic memory technologies. Subsequently, we explore a range of magnetic memory devices that integrate antiferromagnets into various functional layers, showcasing their versatility. The final section projects the evolving landscape of antiferromagnetic applications within magnetic memory devices, emphasizing their promising trajectory in revolutionizing memory storage solutions.","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"1 ","pages":"23-35"},"PeriodicalIF":0.0,"publicationDate":"2024-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141624117","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-05DOI: 10.1109/TMAT.2024.3410166
Weiquan Hao;Xunyu Li;Zijin Pan;Runyu Miao;Zijian Yue;Chen Yang;Albert Z. Wang
This paper reviews advances in developing magnetic-integrated inductors for radio-frequency (RF) integrated circuits (IC). Magnetic integration is a promising way to reduce the footprint of on-chip inductors, which is the main roadblock towards realizing compact RF IC systems-on-a-chip (SoC) operating at GHz and beyond. In the past two decades, researchers have developed many ferromagnetic (FM) or ferrite thin films, laminations, and nanoparticle composites to overcome the frequency limit of the materials, hence, inductors, to GHz range by optimizing materials composition, structure and resistivity, device design, fabrication process, and integration method. The paper starts with reviewing key materials properties required for GHz inductor applications, followed by results of demonstrated magnetic-integrated on-chip inductors. The structural designs of materials and devices, fabrication processes, and the reported device performances of magnetic inductors are summarized. A unique, non-traditional vertical RF inductor with stacked-via magnetic core in CMOS is highlighted. RF IC design examples using magnetic-integrated inductors and emerging GHz tunable inductors are discussed. Future perspectives for compact, multiple-GHz magnetic-integrated inductors are outlined.
{"title":"Advances and Perspectives in Magnetic-Integrated Inductors for RF ICs","authors":"Weiquan Hao;Xunyu Li;Zijin Pan;Runyu Miao;Zijian Yue;Chen Yang;Albert Z. Wang","doi":"10.1109/TMAT.2024.3410166","DOIUrl":"https://doi.org/10.1109/TMAT.2024.3410166","url":null,"abstract":"This paper reviews advances in developing magnetic-integrated inductors for radio-frequency (RF) integrated circuits (IC). Magnetic integration is a promising way to reduce the footprint of on-chip inductors, which is the main roadblock towards realizing compact RF IC systems-on-a-chip (SoC) operating at GHz and beyond. In the past two decades, researchers have developed many ferromagnetic (FM) or ferrite thin films, laminations, and nanoparticle composites to overcome the frequency limit of the materials, hence, inductors, to GHz range by optimizing materials composition, structure and resistivity, device design, fabrication process, and integration method. The paper starts with reviewing key materials properties required for GHz inductor applications, followed by results of demonstrated magnetic-integrated on-chip inductors. The structural designs of materials and devices, fabrication processes, and the reported device performances of magnetic inductors are summarized. A unique, non-traditional vertical RF inductor with stacked-via magnetic core in CMOS is highlighted. RF IC design examples using magnetic-integrated inductors and emerging GHz tunable inductors are discussed. Future perspectives for compact, multiple-GHz magnetic-integrated inductors are outlined.","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"1 ","pages":"106-120"},"PeriodicalIF":0.0,"publicationDate":"2024-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142368273","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-22DOI: 10.1109/TMAT.2024.3393431
Z.-F. Lou;A. Senapati;J.-Y. Lee;F.-S. Chang;K.-Y. Hsiang;Y.-T. Chang;C. W. Liu;S. Maikap;M. H. Lee
Since the analog-based energy-efficient accelerator for synapses is highly demanded in the artificial intelligence (AI) era, the homogeneous and coherence ferroelectric phase of HfZrO 2 (HZO) by superlattice (SL) growth mode with double layers is proposed in this work. The experimental results demonstrate excellent linear alternating consecutive potentiation and depression conductance (α p /α d = −0.85/0.63) with V RMS = 3 V. In addition, the proposed SL technique for HZOs validates the ferroelectric-based orthorhombic phase (o-phase) 75–79% by geometric phase analysis (GPA) compared to the solid-solution process for 62–64%. The double HZO (D-HZO) structure is employed for diverse coercive field (E C ) distributions to exhibit multistate data storage with 8 identical gap V T . The SL-DHZO has a sufficient ferroelectric domain, which is crucial to achieving the requirements of analog-based energy-efficient accelerators for synapses in computing in-memory generation.
{"title":"Analog-Based Synapse of Double HfZrO2 Ferroelectric FETs With Homogeneous Phase by Superlattice HfO2-ZrO2 Toward Energy Efficient Accelerator","authors":"Z.-F. Lou;A. Senapati;J.-Y. Lee;F.-S. Chang;K.-Y. Hsiang;Y.-T. Chang;C. W. Liu;S. Maikap;M. H. Lee","doi":"10.1109/TMAT.2024.3393431","DOIUrl":"https://doi.org/10.1109/TMAT.2024.3393431","url":null,"abstract":"Since the analog-based energy-efficient accelerator for synapses is highly demanded in the artificial intelligence (AI) era, the homogeneous and coherence ferroelectric phase of HfZrO\u0000<sub>2</sub>\u0000 (HZO) by superlattice (SL) growth mode with double layers is proposed in this work. The experimental results demonstrate excellent linear alternating consecutive potentiation and depression conductance (α\u0000<sub>p</sub>\u0000/α\u0000<sub>d</sub>\u0000 = −0.85/0.63) with V\u0000<sub>RMS</sub>\u0000 = 3 V. In addition, the proposed SL technique for HZOs validates the ferroelectric-based orthorhombic phase (o-phase) 75–79% by geometric phase analysis (GPA) compared to the solid-solution process for 62–64%. The double HZO (D-HZO) structure is employed for diverse coercive field (E\u0000<sub>C</sub>\u0000) distributions to exhibit multistate data storage with 8 identical gap V\u0000<sub>T</sub>\u0000. The SL-DHZO has a sufficient ferroelectric domain, which is crucial to achieving the requirements of analog-based energy-efficient accelerators for synapses in computing in-memory generation.","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"1 ","pages":"11-14"},"PeriodicalIF":0.0,"publicationDate":"2024-03-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141084864","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-17DOI: 10.1109/TMAT.2024.3394400
Carlo Grazianetti;Alessandro Molle;Christian Martella
Two-dimensional (2D) materials are today potential candidates for next generation ultra-scaled devices. After the boost provided by graphene, the 2D materials family is still quickly expanding and it is now clear that their properties may suit specific target applications but not all of them as originally expected by device engineers. Among them, a silicon-based 2D material, i.e., silicene, might represent the last frontier of the long shrinking journey of silicon throughout the semiconductor roadmap. Here, we review two applications based on the integration of silicene in field-effect transistors and bendable membranes, demonstrating that, with carefully engineered processes, silicene can be used in specific nanotechnology applications. We then briefly introduce other Xenes, the 2D materials family composed of single-element graphene-like lattices whose silicene is the frontrunner, and finally we provide an outlook on the future improvements to overcome the current roadblocks (large-scale growth and device standardization) towards a lab-to-fab transition towards Xenes integration into the silicon-based complementary metal-oxide-semiconductor technology.
{"title":"Silicene Applications in Nanotechnology: From Transistors to Bendable Membranes","authors":"Carlo Grazianetti;Alessandro Molle;Christian Martella","doi":"10.1109/TMAT.2024.3394400","DOIUrl":"https://doi.org/10.1109/TMAT.2024.3394400","url":null,"abstract":"Two-dimensional (2D) materials are today potential candidates for next generation ultra-scaled devices. After the boost provided by graphene, the 2D materials family is still quickly expanding and it is now clear that their properties may suit specific target applications but not all of them as originally expected by device engineers. Among them, a silicon-based 2D material, i.e., silicene, might represent the last frontier of the long shrinking journey of silicon throughout the semiconductor roadmap. Here, we review two applications based on the integration of silicene in field-effect transistors and bendable membranes, demonstrating that, with carefully engineered processes, silicene can be used in specific nanotechnology applications. We then briefly introduce other Xenes, the 2D materials family composed of single-element graphene-like lattices whose silicene is the frontrunner, and finally we provide an outlook on the future improvements to overcome the current roadblocks (large-scale growth and device standardization) towards a lab-to-fab transition towards Xenes integration into the silicon-based complementary metal-oxide-semiconductor technology.","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"1 ","pages":"1-10"},"PeriodicalIF":0.0,"publicationDate":"2024-03-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10533695","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141068972","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-10-05DOI: 10.1109/TMAT.2023.3321929
{"title":"IEEE Transactions on Materials for Electron Devices","authors":"","doi":"10.1109/TMAT.2023.3321929","DOIUrl":"https://doi.org/10.1109/TMAT.2023.3321929","url":null,"abstract":"","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"1 ","pages":"1-1"},"PeriodicalIF":0.0,"publicationDate":"2023-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/iel7/10167711/10272993/10272976.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"68037548","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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