Pub Date : 2025-04-11DOI: 10.1109/TMAT.2025.3559869
Kevin J. Reilly;Andrew T. Binder;Jeffrey Steinfeldt;Andrew Allerman;Robert J. Kaplar
Five alternative metals are investigated as ohmic contacts to n-GaN including Cr/Au, Mo/Au, Pt/Au, Pd/Au, and Ge/Au. Ti-based contacts are traditionally used for ohmic contacts on n-GaN. However, conventional Ti/Al/Ni/Au metallization is found to be incompatible with a self-aligned process for GaN trench MOSFETs due to wet etch restrictions. Therefore, an alternative metallization is needed that is unreactive to the etch chemistry used in the self-aligned process. Additionally, the contact should remain ohmic following anneal at 900 °C so that contact formation can precede the anneal required for p-dopant activation. In the present work, an n-GaN bilayer, consisting of a thin heavily doped contact layer (n0 = 1 × 1020 cm−3) atop a thick lesser doped layer, is used to demonstrate ohmic contacts of alternative metals with low specific contact resistance and extended thermal budget. Cr/Au ohmic contacts are demonstrated up to anneal temperatures of 800 °C, an increase of 200 °C compared to the highest known reports for Cr/Au contacts on n-GaN. Pt/Au metallization is demonstrated as an ohmic contact to n-GaN for the first time and exhibits true temperature-agnostic behavior up to anneal temperatures of 900 °C with specific contact resistance that is near parity with Ti/Al/Ni/Au. The temperature-agnostic behavior of Pt/Au ohmic contacts on the n-GaN bilayer, in addition to chemical compatibility with the self-aligned process, positions Pt/Au contacts as a key enabling element for self-aligned trench MOSFETs on GaN.
{"title":"Temperature-Agnostic Pt/Au Ohmic Contacts on n-Type Gallium Nitride for Self-Aligned MOSFETs","authors":"Kevin J. Reilly;Andrew T. Binder;Jeffrey Steinfeldt;Andrew Allerman;Robert J. Kaplar","doi":"10.1109/TMAT.2025.3559869","DOIUrl":"https://doi.org/10.1109/TMAT.2025.3559869","url":null,"abstract":"Five alternative metals are investigated as ohmic contacts to <italic>n</i>-GaN including Cr/Au, Mo/Au, Pt/Au, Pd/Au, and Ge/Au. Ti-based contacts are traditionally used for ohmic contacts on <italic>n</i>-GaN. However, conventional Ti/Al/Ni/Au metallization is found to be incompatible with a self-aligned process for GaN trench MOSFETs due to wet etch restrictions. Therefore, an alternative metallization is needed that is unreactive to the etch chemistry used in the self-aligned process. Additionally, the contact should remain ohmic following anneal at 900 °C so that contact formation can precede the anneal required for <italic>p</i>-dopant activation. In the present work, an <italic>n</i>-GaN bilayer, consisting of a thin heavily doped contact layer (<italic>n<sub>0</sub></i> = 1 × 10<sup>20</sup> cm<sup>−3</sup>) atop a thick lesser doped layer, is used to demonstrate ohmic contacts of alternative metals with low specific contact resistance and extended thermal budget. Cr/Au ohmic contacts are demonstrated up to anneal temperatures of 800 °C, an increase of 200 °C compared to the highest known reports for Cr/Au contacts on <italic>n</i>-GaN. Pt/Au metallization is demonstrated as an ohmic contact to <italic>n</i>-GaN for the first time and exhibits true temperature-agnostic behavior up to anneal temperatures of 900 °C with specific contact resistance that is near parity with Ti/Al/Ni/Au. The temperature-agnostic behavior of Pt/Au ohmic contacts on the <italic>n</i>-GaN bilayer, in addition to chemical compatibility with the self-aligned process, positions Pt/Au contacts as a key enabling element for self-aligned trench MOSFETs on GaN.","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"2 ","pages":"34-41"},"PeriodicalIF":0.0,"publicationDate":"2025-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143908428","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This study investigates the resistive-switching characteristics of MoS$_{2}$-based memristors, demonstrating their potential for different device applications. The device, composed of MoS$_{2}$ nanosheets positioned between silver (Ag) and fluorine-doped tin oxide (FTO) electrodes, exhibits distinct switching behaviors under different conditions. Under DC bias, the device initially shows rectification-mediated switching, characterized by asymmetric current-voltage (I-V) curves due to Schottky barriers at the MoS$_{2}$-metal interfaces. However, upon ultra violet (UV) illumination, the device transitions to conductance-mediated switching, which is attributed to the generation of photogenerated carriers that reduce Schottky barriers and enhance conductivity. This transition provides a controllable mechanism for tuning the resistive states, enabling precise modulation of the device's performance. The memristor demonstrates repeatable and stable switching characteristics, making it suitable for low-power memory applications and neuromorphic systems. Furthermore, the dual response to both voltage and light makes the MoS$_{2}$ memristor a promising candidate for developing light-tunable memory devices that can emulate synaptic behavior. These results highlight the potential of MoS$_{2}$-based memristors for integration into advanced memory and computational systems, offering a path toward energy-efficient, flexible, and multifunctional devices.
{"title":"Efficient and Robust Resistive Switching Behaviour of MoS$_{2}$ Based Memristor","authors":"Harsh Ranjan;Chandra Prakash Singh;Vivek Pratap Singh;Saurabh Kumar Pandey","doi":"10.1109/TMAT.2025.3559871","DOIUrl":"https://doi.org/10.1109/TMAT.2025.3559871","url":null,"abstract":"This study investigates the resistive-switching characteristics of MoS<inline-formula><tex-math>$_{2}$</tex-math></inline-formula>-based memristors, demonstrating their potential for different device applications. The device, composed of MoS<inline-formula><tex-math>$_{2}$</tex-math></inline-formula> nanosheets positioned between silver (Ag) and fluorine-doped tin oxide (FTO) electrodes, exhibits distinct switching behaviors under different conditions. Under DC bias, the device initially shows rectification-mediated switching, characterized by asymmetric current-voltage (I-V) curves due to Schottky barriers at the MoS<inline-formula><tex-math>$_{2}$</tex-math></inline-formula>-metal interfaces. However, upon ultra violet (UV) illumination, the device transitions to conductance-mediated switching, which is attributed to the generation of photogenerated carriers that reduce Schottky barriers and enhance conductivity. This transition provides a controllable mechanism for tuning the resistive states, enabling precise modulation of the device's performance. The memristor demonstrates repeatable and stable switching characteristics, making it suitable for low-power memory applications and neuromorphic systems. Furthermore, the dual response to both voltage and light makes the MoS<inline-formula><tex-math>$_{2}$</tex-math></inline-formula> memristor a promising candidate for developing light-tunable memory devices that can emulate synaptic behavior. These results highlight the potential of MoS<inline-formula><tex-math>$_{2}$</tex-math></inline-formula>-based memristors for integration into advanced memory and computational systems, offering a path toward energy-efficient, flexible, and multifunctional devices.","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"2 ","pages":"18-25"},"PeriodicalIF":0.0,"publicationDate":"2025-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143883490","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-04-09DOI: 10.1109/TMAT.2025.3558658
{"title":"Call for Nominations for Editor-in-Chief: IEEE Transactions on Electron Devices","authors":"","doi":"10.1109/TMAT.2025.3558658","DOIUrl":"https://doi.org/10.1109/TMAT.2025.3558658","url":null,"abstract":"","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"2 ","pages":"C3-C3"},"PeriodicalIF":0.0,"publicationDate":"2025-04-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10959323","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143808883","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-04-09DOI: 10.1109/TMAT.2025.3558659
{"title":"Call for Nominations for Editor-in-Chief: IEEE Transactions on Electron Device Letters","authors":"","doi":"10.1109/TMAT.2025.3558659","DOIUrl":"https://doi.org/10.1109/TMAT.2025.3558659","url":null,"abstract":"","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"2 ","pages":"C3-C3"},"PeriodicalIF":0.0,"publicationDate":"2025-04-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10959322","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143808867","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This paper reports the design, integration, modeling and characterization of single crystalline (c-Si) resistors on a 3.6 μm-thick and 2.7 mm-diameter polyimide MEMS membrane. We propose a straightforward top-down fabrication scheme to integrate any microfabricated devices onto a flexible membrane. A bulge-test setup is assembled to measure the deflection of the membrane under a white light interferometer. In addition, a finite elements method (FEM) model is introduced to predict the behavior of the membrane under increasing pressure up to 80 kPa. The parameters of the FEM simulation are tuned with the deflection results to extract the strain tensor, showing a maximal biaxial strain of 0.37% at 80 kPa in the 300 nm-thick c-Si devices. Raman spectroscopy is finally employed to confirm the FEM results by comparing the estimated Raman peak-shift with actual Raman measurements. The shift predicted using phonon-deformation potential (PDP) theory shows excellent agreement with the experimental validation, giving confidence in the FEM model.
{"title":"Design, Fabrication, Modeling and Characterization of a Polyimide-Based Membrane for High Strain Studies in Microfabricated Devices","authors":"Loïc Lahaye;Nicolas Roisin;Nicolas André;Denis Flandre;Jean-Pierre Raskin","doi":"10.1109/TMAT.2025.3557763","DOIUrl":"https://doi.org/10.1109/TMAT.2025.3557763","url":null,"abstract":"This paper reports the design, integration, modeling and characterization of single crystalline (c-Si) resistors on a 3.6 μm-thick and 2.7 mm-diameter polyimide MEMS membrane. We propose a straightforward <italic>top-down</i> fabrication scheme to integrate any microfabricated devices onto a flexible membrane. A <italic>bulge-test</i> setup is assembled to measure the deflection of the membrane under a white light interferometer. In addition, a finite elements method (FEM) model is introduced to predict the behavior of the membrane under increasing pressure up to 80 kPa. The parameters of the FEM simulation are tuned with the deflection results to extract the strain tensor, showing a maximal biaxial strain of 0.37% at 80 kPa in the 300 nm-thick c-Si devices. Raman spectroscopy is finally employed to confirm the FEM results by comparing the estimated Raman peak-shift with actual Raman measurements. The shift predicted using phonon-deformation potential (PDP) theory shows excellent agreement with the experimental validation, giving confidence in the FEM model.","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"2 ","pages":"26-33"},"PeriodicalIF":0.0,"publicationDate":"2025-04-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143883439","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-03-22DOI: 10.1109/TMAT.2025.3572834
Chang-Yeon Gu;Chanhee Yang;Min Sang Ju;Minho Oh;Dong Min Jang;Jae Seok Jang;Jin Woo Jang;Jung Kyu Kim;Taek-Soo Kim
As artificial intelligence (AI) continues to advance, printed circuit board substrates (PCBs) are becoming increasingly important as substrates for stacking various chips. Multilayer PCBs, in particular, are crucial for enhancing performance and reliability through high-density circuit design, improved electrical performance, and miniaturization. These substrates must possess excellent thermal stability to ensure that the stacked chips maintain high performance and reliability even at elevated temperatures. However, high temperatures during production or operation can cause diagonal warpage in multilayer PCBs, potentially leading to reliability issues and malfunction of stacked chips. Therefore, understanding the mechanism behind diagonal warpage in multilayer PCBs subjected to thermal loads is essential for improving package reliability. In this study, the effects of prepreg (PPG) properties on the diagonal warpage of multilayer PCBs were investigated. The viscoelastic behavior of 170 μm thick PPG was quantitatively measured through stress relaxation tests and characterized using the Williams-Landel-Ferry (WLF) model. Additionally, the flexural moduli and coefficient of thermal expansion (CTE1, CTE2) values in the 0°, 45°, 90°, and 135° directions were precisely evaluated using the three-point bending (TPB) test and 3D digital image correlation (3D-DIC) method. Finite element analysis (FEA) simulations demonstrated that the diagonal warpage of PPG is primarily attributed to its viscoelastic-anisotropic properties. By understanding the effects of these properties on warpage behavior, this study provides insights for predicting and enhancing the reliability of multilayer PCBs.
{"title":"Effects of Viscoelastic-Anisotropic Properties of Prepreg on Diagonal Warpage of Multilayer PCB Substrates","authors":"Chang-Yeon Gu;Chanhee Yang;Min Sang Ju;Minho Oh;Dong Min Jang;Jae Seok Jang;Jin Woo Jang;Jung Kyu Kim;Taek-Soo Kim","doi":"10.1109/TMAT.2025.3572834","DOIUrl":"https://doi.org/10.1109/TMAT.2025.3572834","url":null,"abstract":"As artificial intelligence (AI) continues to advance, printed circuit board substrates (PCBs) are becoming increasingly important as substrates for stacking various chips. Multilayer PCBs, in particular, are crucial for enhancing performance and reliability through high-density circuit design, improved electrical performance, and miniaturization. These substrates must possess excellent thermal stability to ensure that the stacked chips maintain high performance and reliability even at elevated temperatures. However, high temperatures during production or operation can cause diagonal warpage in multilayer PCBs, potentially leading to reliability issues and malfunction of stacked chips. Therefore, understanding the mechanism behind diagonal warpage in multilayer PCBs subjected to thermal loads is essential for improving package reliability. In this study, the effects of prepreg (PPG) properties on the diagonal warpage of multilayer PCBs were investigated. The viscoelastic behavior of 170 μm thick PPG was quantitatively measured through stress relaxation tests and characterized using the Williams-Landel-Ferry (WLF) model. Additionally, the flexural moduli and coefficient of thermal expansion (CTE1, CTE2) values in the 0°, 45°, 90°, and 135° directions were precisely evaluated using the three-point bending (TPB) test and 3D digital image correlation (3D-DIC) method. Finite element analysis (FEA) simulations demonstrated that the diagonal warpage of PPG is primarily attributed to its viscoelastic-anisotropic properties. By understanding the effects of these properties on warpage behavior, this study provides insights for predicting and enhancing the reliability of multilayer PCBs.","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"2 ","pages":"64-71"},"PeriodicalIF":0.0,"publicationDate":"2025-03-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144323045","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-03-18DOI: 10.1109/TMAT.2025.3552354
Shah Zahid Yousuf;Sreenivasulu Mamilla;N V L Narasimha Murty
This work reports the tailoring of resistive switching behavior in multilayer BiFeO3/TiO2 heterostructures through controlled oxygen vacancies. TiN/TiO2/BFO/Pt devices are fabricated using a sputtering process and the effect of BFO thickness on grain size, oxygen vacancies and in turn, on the memory window is investigated. The grain size was observed to be dependent on thickness, influencing the density of grain boundaries and consequently altering the oxygen vacancies. Furthermore, the resistive cell's switching behavior and conduction mechanism are systematically investigated. This study reveals notable enhancements in resistive switching behavior, including an increased memory window and improved endurance, due to the insertion of the TiO2 layer. The incorporation of TiO2 improves the resistive switching performance of BFO-based thin films by reducing defects, as confirmed by XPS analysis, thus enhancing stability and reproducibility. TiO2 modulates oxygen vacancies, regulating their distribution within the BFO layer and reducing their density, which directly improves switching behavior. It also enables more uniform electroforming and SET/RESET processes, boosting retention, endurance, and reliability. Furthermore, TiO2 may alter the local electric field, potentially lowering the switching voltage and increasing energy efficiency. The devices demonstrate resistive switching behavior at nanoscale dimensions, as indicated by conductive atomic force microscopy measurements. Remarkably, devices with 80 nm thick BFO on 20 nm thick TiO2 exhibit a high ON/OFF current ratio of 1850 at a read voltage of 0.5 V and stable endurance up to 5.8×106 cycles at room temperature, which is highest so far reported in multilayer BFO rewritable resistive devices. The devices have shown data retention of 10 years with less variation. Our findings indicate that the manipulation of oxygen vacancies through TiO2/BFO bilayer heterostructures holds significant potential as a promising switching layer in the development of advanced RRAM devices with significantly enhanced performance characteristics.
{"title":"Enhanced Resistive Switching in Dopant-Free BFO Devices via TiO2 Insertion","authors":"Shah Zahid Yousuf;Sreenivasulu Mamilla;N V L Narasimha Murty","doi":"10.1109/TMAT.2025.3552354","DOIUrl":"https://doi.org/10.1109/TMAT.2025.3552354","url":null,"abstract":"This work reports the tailoring of resistive switching behavior in multilayer BiFeO<sub>3</sub>/TiO<sub>2</sub> heterostructures through controlled oxygen vacancies. TiN/TiO<sub>2</sub>/BFO/Pt devices are fabricated using a sputtering process and the effect of BFO thickness on grain size, oxygen vacancies and in turn, on the memory window is investigated. The grain size was observed to be dependent on thickness, influencing the density of grain boundaries and consequently altering the oxygen vacancies. Furthermore, the resistive cell's switching behavior and conduction mechanism are systematically investigated. This study reveals notable enhancements in resistive switching behavior, including an increased memory window and improved endurance, due to the insertion of the TiO<sub>2</sub> layer. The incorporation of TiO<sub>2</sub> improves the resistive switching performance of BFO-based thin films by reducing defects, as confirmed by XPS analysis, thus enhancing stability and reproducibility. TiO<sub>2</sub> modulates oxygen vacancies, regulating their distribution within the BFO layer and reducing their density, which directly improves switching behavior. It also enables more uniform electroforming and SET/RESET processes, boosting retention, endurance, and reliability. Furthermore, TiO<sub>2</sub> may alter the local electric field, potentially lowering the switching voltage and increasing energy efficiency. The devices demonstrate resistive switching behavior at nanoscale dimensions, as indicated by conductive atomic force microscopy measurements. Remarkably, devices with 80 nm thick BFO on 20 nm thick TiO<sub>2</sub> exhibit a high ON/OFF current ratio of 1850 at a read voltage of 0.5 V and stable endurance up to 5.8×10<sup>6</sup> cycles at room temperature, which is highest so far reported in multilayer BFO rewritable resistive devices. The devices have shown data retention of 10 years with less variation. Our findings indicate that the manipulation of oxygen vacancies through TiO<sub>2</sub>/BFO bilayer heterostructures holds significant potential as a promising switching layer in the development of advanced RRAM devices with significantly enhanced performance characteristics.","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"2 ","pages":"9-17"},"PeriodicalIF":0.0,"publicationDate":"2025-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143821801","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This paper presents the synthesis and performance of a novel flexible patch antenna sensor based on graphene nanoplatelets (GNP) material designed to operate at the 5.8 GHz frequency, targeting wearable applications. The fabrication process employed in this chapter involved a simple yet effective spray coating method, utilizing a GNP dispersion applied with a spray gun to form a rectangular patch with a full ground plane on the PDMS substrate. This method offers the advantages of being cost-effective and scalable, making it suitable for large-scale production. The antenna's performance as a sensor was evaluated by subjecting it to different bending scenarios, mimicking both compressive (positive bending) and tensile (negative bending) strains. The resulting shifts in resonant frequency under these conditions offered important information about the sensor's sensitivity. The practical applicability of the antenna sensor was demonstrated through human limb motion detection experiments, specifically tracking wrist movements. The sensor's ability to detect upward and downward wrist motions through variations in the normalized frequency output highlights its potential for real-world wearable applications. In addition to its promising performance, the operation of this antenna within the Industrial/Scientific/Medical (ISM) band at 5.8 GHz opens up a range of potential applications.
{"title":"Spray Coated GNP-PDMS Flexible Patch Antenna-Sensor for Wireless Wearable Applications","authors":"Atul Kumar Sharma;Anup Kumar Sharma;Ritu Sharma;Puneet Sharma;Mamta Devi Sharma","doi":"10.1109/TMAT.2025.3539249","DOIUrl":"https://doi.org/10.1109/TMAT.2025.3539249","url":null,"abstract":"This paper presents the synthesis and performance of a novel flexible patch antenna sensor based on graphene nanoplatelets (GNP) material designed to operate at the 5.8 GHz frequency, targeting wearable applications. The fabrication process employed in this chapter involved a simple yet effective spray coating method, utilizing a GNP dispersion applied with a spray gun to form a rectangular patch with a full ground plane on the PDMS substrate. This method offers the advantages of being cost-effective and scalable, making it suitable for large-scale production. The antenna's performance as a sensor was evaluated by subjecting it to different bending scenarios, mimicking both compressive (positive bending) and tensile (negative bending) strains. The resulting shifts in resonant frequency under these conditions offered important information about the sensor's sensitivity. The practical applicability of the antenna sensor was demonstrated through human limb motion detection experiments, specifically tracking wrist movements. The sensor's ability to detect upward and downward wrist motions through variations in the normalized frequency output highlights its potential for real-world wearable applications. In addition to its promising performance, the operation of this antenna within the Industrial/Scientific/Medical (ISM) band at 5.8 GHz opens up a range of potential applications.","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"2 ","pages":"1-8"},"PeriodicalIF":0.0,"publicationDate":"2025-02-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143512794","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-02-03DOI: 10.1109/TMAT.2025.3535909
{"title":"Call for Nominations for Editor-in-Chief: IEEE Transactions on Semiconductor Manufacturing","authors":"","doi":"10.1109/TMAT.2025.3535909","DOIUrl":"https://doi.org/10.1109/TMAT.2025.3535909","url":null,"abstract":"","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"2 ","pages":"C3-C3"},"PeriodicalIF":0.0,"publicationDate":"2025-02-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10869512","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143105656","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-01-17DOI: 10.1109/TMAT.2025.3529277
{"title":"Wide Band Gap Semiconductors for Automotive Applications Call for Papers","authors":"","doi":"10.1109/TMAT.2025.3529277","DOIUrl":"https://doi.org/10.1109/TMAT.2025.3529277","url":null,"abstract":"","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"2 ","pages":"C3-C3"},"PeriodicalIF":0.0,"publicationDate":"2025-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10844544","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142993022","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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