A set of preferred numerical relations describing the cadmium-mercury-tellurium phase diagram is presented in the form of equations and tabulated data.
A set of preferred numerical relations describing the cadmium-mercury-tellurium phase diagram is presented in the form of equations and tabulated data.
AlxGa1−xAs is an important III–V semiconductor for device applications in the optoelectronics field. Growth aspects, characterization and kinetics of AlxGa1−xAs by organometallic - CVD are reviewed. The review primarily covers the effect of growth parameters on material preparation and material quality, doping, electronic and optical properties, and applications to devices and associated problems with their performance. Current problems of PPC centers, D.X centers, and deep level characterization in relation to the basic chemistry of the material and implications on device performance are dealt with. Growth and characterizations of exotic multilayer structures (superlattices, cascades, multiple quantum well structures, etc.) are reported in terms of current specific problems. The future of crystal growth methods employing the organometallics is assessed in relation to the current and future technologies.
X-ray topographic studies of crystal perfection over the past two decades in the People's Republic of China are outlined. Those papers published in Chinese Journals and in the Chinese language are reviewed and a summary of instrumentation and research groups presently active is presented.
The magnetic properties of layer AB2X4 compounds, having a ZnIn2S4-type structure, are discussed considering them as possible models for two-dimensional magnetic systems. MnAL2S4, MnAL2Se4 and FeGa2S4 do not appear to be good model systems because the magnetic ions are distributed among tetrahedral as well as octahedral sites of the structure. Their magnetic properties are better understood in terms of short-range magnetic order arising from the presence of isolated clusters. The magnetic behaviour of Co .46Zn .54In2S4, crystallizing in space group R3m, can be explained in the same way.
Only in CrGa1.67S4 do the magnetic Cr3+ ions lie in a triangular planar lattice and, therefore, the magnetic properties are interpreted in terms of a 2-d magnetic system in the temperature range 80 ⩽ T ⩽ 300K.
Work on silicon molecular beam epitaxy (Si-MBE) is now growing on a worldwide scale and various aspects of this work are here reviewed. Basic studies on surface cleaning and defect evaluation have been conducted to improve epitaxy and homoepitaxy and doping have been certified to be comparable or exceed those of conventional CVB epitaxial layers. Formation of doping superlattices is a prime example demonstrating the potential of Si-MBE over conventional growth techniques. Heteroepitaxy including combinations such as silicon/insulator and silicon/metal (silicide) has become an active and growing field for both basic research and device development.
MOCVD AlxGa1−xAs solar cells are reviewed. A summary status report of the past three year's research is presented. Status of the MOCVD crystal growth technology in relation to the optimization of the AlxGa1−xAs solar cells is assessed. Device characteristics, their structural and material parameters and problems are given. Directions for future research for improving the conversion efficiencies of these solar cells in terms of the material quality improvement and the structural innovation are given.
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