Pub Date : 1986-01-01DOI: 10.1016/0146-3535(86)90009-2
R.A. Logan
{"title":"LPE of buried heterostructure laser devices","authors":"R.A. Logan","doi":"10.1016/0146-3535(86)90009-2","DOIUrl":"10.1016/0146-3535(86)90009-2","url":null,"abstract":"","PeriodicalId":101046,"journal":{"name":"Progress in Crystal Growth and Characterization","volume":"12 1","pages":"Pages 215-242"},"PeriodicalIF":0.0,"publicationDate":"1986-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0146-3535(86)90009-2","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90252474","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1986-01-01DOI: 10.1016/0146-3535(86)90030-4
M.P. Pardo, J. Flahaut
In a first part is described the equilibrium phase diagram of the Ga2S3 - MnS system. In a second part are described two series of metastable phases : 1) phases so-called of the “first generation”, prepared by quenching the phases of this system which are only stable at high temperature, and are metastable at low temperature. 2) phases so-called of the “second generation” prepared by convenient annealing of the preceding metastable phases. Phases of this second series are metastable for all the temperatures they are observed. They are formed by an exothermic process, and decompose by a second exothermic process. They are superstructures of the wurtzite or of the blende.
Three different non-equilibrium phase diagrams are described, according to the thermal conditions of the metastable phases synthesis.
{"title":"Metastable phases in the binary system Ga2S3-MnS: Thermal and structural features","authors":"M.P. Pardo, J. Flahaut","doi":"10.1016/0146-3535(86)90030-4","DOIUrl":"10.1016/0146-3535(86)90030-4","url":null,"abstract":"<div><p>In a first part is described the equilibrium phase diagram of the Ga<sub>2</sub>S<sub>3</sub> - MnS system. In a second part are described two series of metastable phases : 1) phases so-called of the “first generation”, prepared by quenching the phases of this system which are only stable at high temperature, and are metastable at low temperature. 2) phases so-called of the “second generation” prepared by convenient annealing of the preceding metastable phases. Phases of this second series are metastable for all the temperatures they are observed. They are formed by an exothermic process, and decompose by a second exothermic process. They are superstructures of the wurtzite or of the blende.</p><p>Three different non-equilibrium phase diagrams are described, according to the thermal conditions of the metastable phases synthesis.</p></div>","PeriodicalId":101046,"journal":{"name":"Progress in Crystal Growth and Characterization","volume":"13 2","pages":"Pages 83-95"},"PeriodicalIF":0.0,"publicationDate":"1986-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0146-3535(86)90030-4","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88497814","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1986-01-01DOI: 10.1016/0146-3535(86)90015-8
C.H. Cheng , K.A. Jones , K.M. Motyl
High quality InGaAs films have been grown using the adduct Me3In⋅AsMe3 to block the room temperature reaction between Me3In and AsH3 and by using a cover piece to prevent the preferential evaporation of phosphorus from the InP substrate during the warm up. Infrared spectroscopy shows that Me3Ga+AsMe3 and Me3Ga+AsH3 form stable adducts at room temperature, Me3In+AsMe3 probably form a stable adduct, while Et3In+AsMe3 probably do not form a stable Lewis acid/base adduct. Poorer quality films are grown with Et3In than with Me3In because the AsMe3 is unable to prevent by adduct formation the room temperature reaction between Et3In and AsH3. Pyrolysis studies show that the individual alkyls are stable to ∼ 400°C and mixtures are stable to ∼ 350°C. The problems associated with the lower vapor pressure of the adducts, adduct dissociation at room temperature and the growth temperature, and using an adduct as the starting material are discussed.
{"title":"MO-CVD growth of InGaAs using Me3Ga, AsMe3, AsH3 and Me3In or Et3In and analyses of adducts formed during the growth process","authors":"C.H. Cheng , K.A. Jones , K.M. Motyl","doi":"10.1016/0146-3535(86)90015-8","DOIUrl":"10.1016/0146-3535(86)90015-8","url":null,"abstract":"<div><p>High quality <em>InGaAs</em> films have been grown using the adduct <em>Me</em><sub>3</sub><em>In</em>⋅<em>AsMe</em><sub>3</sub> to block the room temperature reaction between <em>Me</em><sub>3</sub><em>In</em> and <em>AsH</em><sub>3</sub> and by using a cover piece to prevent the preferential evaporation of phosphorus from the <em>InP</em> substrate during the warm up. Infrared spectroscopy shows that <em>Me</em><sub>3</sub><em>Ga</em>+<em>AsMe</em><sub>3</sub> and <em>Me</em><sub>3</sub><em>Ga</em>+<em>AsH</em><sub>3</sub> form stable adducts at room temperature, <em>Me</em><sub>3</sub><em>In</em>+<em>AsMe</em><sub>3</sub> probably form a stable adduct, while <em>Et</em><sub>3</sub><em>In</em>+<em>AsMe</em><sub>3</sub> probably do not form a stable Lewis acid/base adduct. Poorer quality films are grown with <em>Et</em><sub>3</sub><em>In</em> than with <em>Me</em><sub>3</sub><em>In</em> because the <em>AsMe</em><sub>3</sub> is unable to prevent by adduct formation the room temperature reaction between <em>Et</em><sub>3</sub><em>In</em> and <em>AsH</em><sub>3</sub>. Pyrolysis studies show that the individual alkyls are stable to ∼ 400°C and mixtures are stable to ∼ 350°C. The problems associated with the lower vapor pressure of the adducts, adduct dissociation at room temperature and the growth temperature, and using an adduct as the starting material are discussed.</p></div>","PeriodicalId":101046,"journal":{"name":"Progress in Crystal Growth and Characterization","volume":"12 1","pages":"Pages 319-333"},"PeriodicalIF":0.0,"publicationDate":"1986-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0146-3535(86)90015-8","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76023675","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1986-01-01DOI: 10.1016/0146-3535(86)90029-8
Kenneth A. Jones
{"title":"CVD growth of InGaAs","authors":"Kenneth A. Jones","doi":"10.1016/0146-3535(86)90029-8","DOIUrl":"10.1016/0146-3535(86)90029-8","url":null,"abstract":"","PeriodicalId":101046,"journal":{"name":"Progress in Crystal Growth and Characterization","volume":"13 4","pages":"Pages 291-309"},"PeriodicalIF":0.0,"publicationDate":"1986-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0146-3535(86)90029-8","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79413281","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1986-01-01DOI: 10.1016/0146-3535(86)90017-1
{"title":"Compound index","authors":"","doi":"10.1016/0146-3535(86)90017-1","DOIUrl":"https://doi.org/10.1016/0146-3535(86)90017-1","url":null,"abstract":"","PeriodicalId":101046,"journal":{"name":"Progress in Crystal Growth and Characterization","volume":"12 1","pages":"Pages 341-342"},"PeriodicalIF":0.0,"publicationDate":"1986-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0146-3535(86)90017-1","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136940098","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1986-01-01DOI: 10.1016/0146-3535(86)90005-5
T. Bryskiewicz
{"title":"Liquid phase electroepitaxy of semiconductor compounds","authors":"T. Bryskiewicz","doi":"10.1016/0146-3535(86)90005-5","DOIUrl":"10.1016/0146-3535(86)90005-5","url":null,"abstract":"","PeriodicalId":101046,"journal":{"name":"Progress in Crystal Growth and Characterization","volume":"12 1","pages":"Pages 29-43"},"PeriodicalIF":0.0,"publicationDate":"1986-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0146-3535(86)90005-5","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80739635","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1986-01-01DOI: 10.1016/0146-3535(86)90012-2
Hari Prakash
Metalorganic halides are discussed for OM-CVD crystal growth. A growth model for the III–V semiconductors is proposed which employs metal-halogen-metal bridging to eliminate the metal- carbon-metal bridging in the group III organometallics considered to be a major factor for the carbon contamination of the OM-CVD crystals and formation of metal carbide parasitic phase. The metal-halogen-metal bridge theory underlying the model is put to test by spanning the organo and halide functions substituted on group III element for elimination of carbon contamination and improvements of the growth rates and electrophysical properties of the III–V alloys.
{"title":"An improved OM-CVD growth model for III–V semiconductors—Metalorganic halides for the CVD growth","authors":"Hari Prakash","doi":"10.1016/0146-3535(86)90012-2","DOIUrl":"10.1016/0146-3535(86)90012-2","url":null,"abstract":"<div><p>Metalorganic halides are discussed for OM-CVD crystal growth. A growth model for the III–V semiconductors is proposed which employs metal-halogen-metal bridging to eliminate the metal- carbon-metal bridging in the group III organometallics considered to be a major factor for the carbon contamination of the OM-CVD crystals and formation of metal carbide parasitic phase. The metal-halogen-metal bridge theory underlying the model is put to test by spanning the organo and halide functions substituted on group III element for elimination of carbon contamination and improvements of the growth rates and electrophysical properties of the III–V alloys.</p></div>","PeriodicalId":101046,"journal":{"name":"Progress in Crystal Growth and Characterization","volume":"12 1","pages":"Pages 265-269"},"PeriodicalIF":0.0,"publicationDate":"1986-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0146-3535(86)90012-2","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87596887","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1986-01-01DOI: 10.1016/0146-3535(86)90034-1
{"title":"Contents, subject and compound indexes","authors":"","doi":"10.1016/0146-3535(86)90034-1","DOIUrl":"https://doi.org/10.1016/0146-3535(86)90034-1","url":null,"abstract":"","PeriodicalId":101046,"journal":{"name":"Progress in Crystal Growth and Characterization","volume":"13 ","pages":"Pages iii-xi"},"PeriodicalIF":0.0,"publicationDate":"1986-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0146-3535(86)90034-1","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"109147396","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1986-01-01DOI: 10.1016/0146-3535(86)90013-4
Haruo Nagai
{"title":"LPE growth of InP and related alloys","authors":"Haruo Nagai","doi":"10.1016/0146-3535(86)90013-4","DOIUrl":"10.1016/0146-3535(86)90013-4","url":null,"abstract":"","PeriodicalId":101046,"journal":{"name":"Progress in Crystal Growth and Characterization","volume":"12 1","pages":"Pages 271-294"},"PeriodicalIF":0.0,"publicationDate":"1986-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0146-3535(86)90013-4","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74561955","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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