Pub Date : 1986-12-31DOI: 10.1515/9783112493182-011
S. Rahman, Dipak K. Sarker
{"title":"Temperature Dependence of Structural and Transport Properties of Less- Simple Liquid Metals","authors":"S. Rahman, Dipak K. Sarker","doi":"10.1515/9783112493182-011","DOIUrl":"https://doi.org/10.1515/9783112493182-011","url":null,"abstract":"","PeriodicalId":10913,"journal":{"name":"Day 1 Wed, February 23, 2022","volume":"128 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1986-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79564072","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1986-12-31DOI: 10.1515/9783112493182-053
A. Brézini, M. Sebbani
{"title":"Power Law Localization in One-Dimensional Random Potentials","authors":"A. Brézini, M. Sebbani","doi":"10.1515/9783112493182-053","DOIUrl":"https://doi.org/10.1515/9783112493182-053","url":null,"abstract":"","PeriodicalId":10913,"journal":{"name":"Day 1 Wed, February 23, 2022","volume":"77 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1986-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76835988","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1986-12-31DOI: 10.1515/9783112493182-046
D. Hajdukovic, L. Maurer
{"title":"About Critical Condition of the Ising and Potts Model on the Pentagon Lattice","authors":"D. Hajdukovic, L. Maurer","doi":"10.1515/9783112493182-046","DOIUrl":"https://doi.org/10.1515/9783112493182-046","url":null,"abstract":"","PeriodicalId":10913,"journal":{"name":"Day 1 Wed, February 23, 2022","volume":"72 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1986-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90473440","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1986-12-31DOI: 10.1515/9783112493182-029
E. Trif, A. Nicula
{"title":"EPR of Nd3+ Ions in Y-Type Zeolites","authors":"E. Trif, A. Nicula","doi":"10.1515/9783112493182-029","DOIUrl":"https://doi.org/10.1515/9783112493182-029","url":null,"abstract":"","PeriodicalId":10913,"journal":{"name":"Day 1 Wed, February 23, 2022","volume":"139 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1986-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79858516","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1986-12-31DOI: 10.1515/9783112493182-040
V. Milanovic, D. Tjapkin, R. Šašić
{"title":"The Influence of Nonparabolicity on Self-Consistent Treatment for GaAs-Al x Ga 1-x As Heterojunction","authors":"V. Milanovic, D. Tjapkin, R. Šašić","doi":"10.1515/9783112493182-040","DOIUrl":"https://doi.org/10.1515/9783112493182-040","url":null,"abstract":"","PeriodicalId":10913,"journal":{"name":"Day 1 Wed, February 23, 2022","volume":"50 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1986-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86770347","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Magnetic fields created by curved or straight flux lines as well as the magnetic fields within a type-II superconducting hollow cylinder are presented for the case when an external field is applied within the hollow region. In order to verify the theoretical calculations and to measure especially the stray field an experimental set-up is proposed that can also be used to measure the effect of a sharp edge on field intensity. Die Magnetfelder, die durch gekrummte oder gerade Fluslinien erzeugt werden, sowie die Magnetfelder im Inneren eines Supraleiters vom Typ II werden fur den Fall, das ein auseres Feld im Hohlraum existiert, angegeben. Um die theoretischen Berechnungen zu uberprufen und speziell das Streufeld zu messen, wird eine experimentelle Anordnung vorgeschlagen, die auch fur die Messung des Effekts einer scharfen Kante auf die Feldintensitat benutzt werden kann.
{"title":"Curved Flux Line Effects in a Type-II Superconducting Hollow Cylinder","authors":"L. N. Shehata, T. Refai","doi":"10.1002/PSSB.2221330233","DOIUrl":"https://doi.org/10.1002/PSSB.2221330233","url":null,"abstract":"Magnetic fields created by curved or straight flux lines as well as the magnetic fields within a type-II superconducting hollow cylinder are presented for the case when an external field is applied within the hollow region. In order to verify the theoretical calculations and to measure especially the stray field an experimental set-up is proposed that can also be used to measure the effect of a sharp edge on field intensity. \u0000 \u0000 \u0000 \u0000Die Magnetfelder, die durch gekrummte oder gerade Fluslinien erzeugt werden, sowie die Magnetfelder im Inneren eines Supraleiters vom Typ II werden fur den Fall, das ein auseres Feld im Hohlraum existiert, angegeben. Um die theoretischen Berechnungen zu uberprufen und speziell das Streufeld zu messen, wird eine experimentelle Anordnung vorgeschlagen, die auch fur die Messung des Effekts einer scharfen Kante auf die Feldintensitat benutzt werden kann.","PeriodicalId":10913,"journal":{"name":"Day 1 Wed, February 23, 2022","volume":"5 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1986-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89308956","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
D. S. Domanevskii, V. V. Krasovskii, M. V. Prokopenya, V. A. Vilkotskii, S. V. Zhokhovets
The influence is examined of growth conditions of heavily doped n-type semiconductors on the width and energy position of Gaussian-shape impurity band where non-equilibrium holes are localized. The energy levels of the impurity band are shown to be caused by associations of oppositely charged crystal imperfections (so-called associates) including several shallow donor impurity atoms and a deep structural defect. The reason of Gaussian broadening of these states is a random spatial arrangement of associated imperfections about each other within a given associate. [Russian Text Ignored].
{"title":"The Origin of the Minority Impurity States in Heavily Doped Semiconductors","authors":"D. S. Domanevskii, V. V. Krasovskii, M. V. Prokopenya, V. A. Vilkotskii, S. V. Zhokhovets","doi":"10.1002/PSSB.2221330231","DOIUrl":"https://doi.org/10.1002/PSSB.2221330231","url":null,"abstract":"The influence is examined of growth conditions of heavily doped n-type semiconductors on the width and energy position of Gaussian-shape impurity band where non-equilibrium holes are localized. The energy levels of the impurity band are shown to be caused by associations of oppositely charged crystal imperfections (so-called associates) including several shallow donor impurity atoms and a deep structural defect. The reason of Gaussian broadening of these states is a random spatial arrangement of associated imperfections about each other within a given associate. \u0000 \u0000 \u0000 \u0000[Russian Text Ignored].","PeriodicalId":10913,"journal":{"name":"Day 1 Wed, February 23, 2022","volume":"168 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1986-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77397068","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. G. Gagarin, A. Mudryi, A. Pushkarchuk, A. Ulyashin, Y. Teterin
The possibility of formation of a chemical bond between noble gas atoms (Ne, Ar), ion-implanted into silicon, and matrix atoms is treated theoretically in a cluster representation using both, the scattered-wave Xα (SW-Xα) and complete, neglect of differential overlap (CNDO/2) electronic structure methods. It is shown that the presence of noble gas atoms in the silicon lattice results in formation of inner valence molecular orbitals (MO) when Ar and Ne atoms interact with Si atoms. A theoretical analysis is made of the results of possible investigations of these structures by photo-electron spectroscopy measurements. [Russian Text Ignored].
{"title":"Theoretical Analysis of the Chemical Activivity of Noble Gas Atoms in Silicon","authors":"S. G. Gagarin, A. Mudryi, A. Pushkarchuk, A. Ulyashin, Y. Teterin","doi":"10.1002/PSSB.2221330208","DOIUrl":"https://doi.org/10.1002/PSSB.2221330208","url":null,"abstract":"The possibility of formation of a chemical bond between noble gas atoms (Ne, Ar), ion-implanted into silicon, and matrix atoms is treated theoretically in a cluster representation using both, the scattered-wave Xα (SW-Xα) and complete, neglect of differential overlap (CNDO/2) electronic structure methods. It is shown that the presence of noble gas atoms in the silicon lattice results in formation of inner valence molecular orbitals (MO) when Ar and Ne atoms interact with Si atoms. A theoretical analysis is made of the results of possible investigations of these structures by photo-electron spectroscopy measurements. \u0000 \u0000 \u0000 \u0000[Russian Text Ignored].","PeriodicalId":10913,"journal":{"name":"Day 1 Wed, February 23, 2022","volume":"10 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1986-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85997608","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The ligand field Hamiltonian for a d electron in a transition metal doping a strained corundum crystal is worked out in the frame of a cluster model. The formulation makes explicit reference to the inner elasticity constants and allows the Hamiltonian to be used as well from the covalent point of view as in the point charge model. Considerant le champ des ligandes agissant sur un electron d d'un ion de transition incorpore dans un cristal de corindon deforme elastiquement, on a calcule l'hamiltonien de deformation dans le cadre d'un modele de premiers voisins. L'expression qui en resulte tient compte explicitement des constantes d'elasticite interne et est compatible aussi bien avec un modele covalent qu'avec celui de charges ponctuelles.
= =地理= =根据美国人口普查，这个县的面积为，其中土地面积为，其中土地面积为。The配方makes露骨参考to The inner elasticity不变的和相称的Hamiltonian to be used as well, from The covalent as in The point of view point负荷模型。考虑弹性变形刚玉晶体中过渡离子的配体作用于电子d的场，计算了变形哈密顿量作为第一邻居模型的一部分。得到的表达式明确地考虑了内部弹性常数，并与共价模型和点电荷模型兼容。
{"title":"The Ligand Field on dn Ions in a Strained Corundum Crystal","authors":"R. Lacroix","doi":"10.1002/PSSB.2221330228","DOIUrl":"https://doi.org/10.1002/PSSB.2221330228","url":null,"abstract":"The ligand field Hamiltonian for a d electron in a transition metal doping a strained corundum crystal is worked out in the frame of a cluster model. The formulation makes explicit reference to the inner elasticity constants and allows the Hamiltonian to be used as well from the covalent point of view as in the point charge model. \u0000 \u0000 \u0000 \u0000Considerant le champ des ligandes agissant sur un electron d d'un ion de transition incorpore dans un cristal de corindon deforme elastiquement, on a calcule l'hamiltonien de deformation dans le cadre d'un modele de premiers voisins. L'expression qui en resulte tient compte explicitement des constantes d'elasticite interne et est compatible aussi bien avec un modele covalent qu'avec celui de charges ponctuelles.","PeriodicalId":10913,"journal":{"name":"Day 1 Wed, February 23, 2022","volume":"31 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1986-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75795390","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The defecton statistics in quantum crystals is treated, and a new method for determining commutation relations is proposed. Defectons related to defects of a different kind (vacancies, impurities, interstitials) are considered in crystals both of the Bose-type (4He) and Fermi-type (3He). The kinematic interaction is discussed. Es wird die Statistik von Defektonen in Quantenkristallen behandelt und eine neue Methode zur Bestimmung der Vertauschungsrelationen vorgeschlagen. Defektonen, hervorgerufen durch ver-schiedenartige Defekte (Leerstellen, Verunreinigungen. Zwischengitteratome), werden sowohl fur Kristalle vom Bose-Typ (4He) als auch fur Kristalle vom Fermi-Typ (2He) betrachtet. Die kine-matische Wechselwirkung wird diskutiert.
{"title":"On the Defecton Statistics in Quantum Crystals","authors":"D. Pushkarov","doi":"10.1002/PSSB.2221330212","DOIUrl":"https://doi.org/10.1002/PSSB.2221330212","url":null,"abstract":"The defecton statistics in quantum crystals is treated, and a new method for determining commutation relations is proposed. Defectons related to defects of a different kind (vacancies, impurities, interstitials) are considered in crystals both of the Bose-type (4He) and Fermi-type (3He). The kinematic interaction is discussed. \u0000 \u0000 \u0000 \u0000Es wird die Statistik von Defektonen in Quantenkristallen behandelt und eine neue Methode zur Bestimmung der Vertauschungsrelationen vorgeschlagen. Defektonen, hervorgerufen durch ver-schiedenartige Defekte (Leerstellen, Verunreinigungen. Zwischengitteratome), werden sowohl fur Kristalle vom Bose-Typ (4He) als auch fur Kristalle vom Fermi-Typ (2He) betrachtet. Die kine-matische Wechselwirkung wird diskutiert.","PeriodicalId":10913,"journal":{"name":"Day 1 Wed, February 23, 2022","volume":"14 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1986-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79527038","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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