The density response of a jellium surface to external charge and potential perturbations is derived within the hydrodynamic approximation. Retardation effects, damping, and spatial dispersion are included. Results agree with those of Schaich, and in the non-retarded limit with correct results of Das Sarma and Quinn. The density–potential reponse function, which gives information on inelastic scattering experiment, is explicitly given in the two-step density model. Dispersion of the surface modes are also discussed in this model. Die Dichteresponse einer Jellium-Oberflache auf ausere Dichte- und Potentialstorungen wird im Rahmen der hydrodynamischen Naherung hergeleitet. Retardierte Effekte, Dampfung und raumliche Dispersion werden berucksichtigt. Die Ergebnisse stimmen mit denen von Schaich und im nichtretardierten Grenzfall mit den korrekten Ergebnissen von Das Sarma und Quinn uberein. Die Dichte–Potential-Responsefunktion, die Information im Experiment uber inelastische Streuung liefert, wird im Zwei-Stufen-Dichte-Modell explizit angegeben. Die Dispersion der Oberflachenmoden wird ebenfalls in diesem Modell diskutiert.
{"title":"Linear Density Response at the Metal Surface in the Hydrodynamic Approximation","authors":"T. T. Bao","doi":"10.1002/PSSB.2221330225","DOIUrl":"https://doi.org/10.1002/PSSB.2221330225","url":null,"abstract":"The density response of a jellium surface to external charge and potential perturbations is derived within the hydrodynamic approximation. Retardation effects, damping, and spatial dispersion are included. Results agree with those of Schaich, and in the non-retarded limit with correct results of Das Sarma and Quinn. The density–potential reponse function, which gives information on inelastic scattering experiment, is explicitly given in the two-step density model. Dispersion of the surface modes are also discussed in this model. \u0000 \u0000 \u0000 \u0000Die Dichteresponse einer Jellium-Oberflache auf ausere Dichte- und Potentialstorungen wird im Rahmen der hydrodynamischen Naherung hergeleitet. Retardierte Effekte, Dampfung und raumliche Dispersion werden berucksichtigt. Die Ergebnisse stimmen mit denen von Schaich und im nichtretardierten Grenzfall mit den korrekten Ergebnissen von Das Sarma und Quinn uberein. Die Dichte–Potential-Responsefunktion, die Information im Experiment uber inelastische Streuung liefert, wird im Zwei-Stufen-Dichte-Modell explizit angegeben. Die Dispersion der Oberflachenmoden wird ebenfalls in diesem Modell diskutiert.","PeriodicalId":10913,"journal":{"name":"Day 1 Wed, February 23, 2022","volume":"84 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1986-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72748892","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
V. P. Shirokovskii, N. A. Shilkova, N. A. Trubitsina
Using the Hellman-Feynman theorem and the perturbation theory for the matrix, an expression for the electron velocity in crystals is derived. Calculations are carried out on a mesh of 55 points in 1/48 th of the b.c.c. Brillouin zone for six energy bands of vanadium. The comparison with the data of numerical differentiation demonstrates the excellent accuracy of the technique presented. The influence of higher angular-momentum terms in the expansion of the wave function on the velocity value is discussed. [Russian Text Ignored].
{"title":"Calculation of Electron Velocity in Crystal ab Initio. Results of Computation by Green's Function Method for Vanadium","authors":"V. P. Shirokovskii, N. A. Shilkova, N. A. Trubitsina","doi":"10.1002/PSSB.2221330220","DOIUrl":"https://doi.org/10.1002/PSSB.2221330220","url":null,"abstract":"Using the Hellman-Feynman theorem and the perturbation theory for the matrix, an expression for the electron velocity in crystals is derived. Calculations are carried out on a mesh of 55 points in 1/48 th of the b.c.c. Brillouin zone for six energy bands of vanadium. The comparison with the data of numerical differentiation demonstrates the excellent accuracy of the technique presented. The influence of higher angular-momentum terms in the expansion of the wave function on the velocity value is discussed. \u0000 \u0000 \u0000 \u0000[Russian Text Ignored].","PeriodicalId":10913,"journal":{"name":"Day 1 Wed, February 23, 2022","volume":"34 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1986-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74079938","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Voloshinskii, N. Ryzhanova, L. Y. Vishnekov, A. Obukhov
The concentration dependence of the off-diagonal component of the electroconductivity tensor and that of the average magnetic moment are calculated for PdFe, PdCo, and PdNi alloys in the coherent potential approximation (CPA). These calculations are based on realistic models of the component densities of states (DOS's). Experimental and theoretical results are compared. [Russian Text Ignored].
{"title":"Off-Diagonal Conductivity and Magnetization of PdFe, PdCo, and PdNi Alloys in Coherent Potential Approximation Calculated on the Basis of Realistic Models of Component Densities of States","authors":"A. Voloshinskii, N. Ryzhanova, L. Y. Vishnekov, A. Obukhov","doi":"10.1002/PSSB.2221330236","DOIUrl":"https://doi.org/10.1002/PSSB.2221330236","url":null,"abstract":"The concentration dependence of the off-diagonal component of the electroconductivity tensor and that of the average magnetic moment are calculated for PdFe, PdCo, and PdNi alloys in the coherent potential approximation (CPA). These calculations are based on realistic models of the component densities of states (DOS's). Experimental and theoretical results are compared. \u0000 \u0000 \u0000 \u0000[Russian Text Ignored].","PeriodicalId":10913,"journal":{"name":"Day 1 Wed, February 23, 2022","volume":"218 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1986-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75619226","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
V. Kiselev, B. Novikov, A. Cherednichenko, E. A. Ubushiev
Resonance reflectance in semiconductors in the frequency region of exciton transitions depends strongly on characteristics of the near-surface space-charge layers. It is shown by numerical computation that the majority of the exciton reflection lineshapes observed on CdS earlier may be explained by the presence of a thin (10 to 100 nm) space-charge layer with a relatively high (104 to 105 V/cm) surface electric field. Various treatments of surfaces alter charges on and below them thus modifying the electric field distribution. The latter causes changes in the exciton reflectance. Transformations of the exciton lineshapes under the action of illumination and electron bombardment are discussed in detail for the case of CdS. The lineshapes show drastic variations with expositions of both influences. In a single experiment one may observe all of the anomalies typical for the thin space-charge layers. [Russian Text Ignored].
{"title":"Effect of Thin Space-Charge Layers on Exciton Reflectance","authors":"V. Kiselev, B. Novikov, A. Cherednichenko, E. A. Ubushiev","doi":"10.1002/PSSB.2221330218","DOIUrl":"https://doi.org/10.1002/PSSB.2221330218","url":null,"abstract":"Resonance reflectance in semiconductors in the frequency region of exciton transitions depends strongly on characteristics of the near-surface space-charge layers. It is shown by numerical computation that the majority of the exciton reflection lineshapes observed on CdS earlier may be explained by the presence of a thin (10 to 100 nm) space-charge layer with a relatively high (104 to 105 V/cm) surface electric field. Various treatments of surfaces alter charges on and below them thus modifying the electric field distribution. The latter causes changes in the exciton reflectance. Transformations of the exciton lineshapes under the action of illumination and electron bombardment are discussed in detail for the case of CdS. The lineshapes show drastic variations with expositions of both influences. In a single experiment one may observe all of the anomalies typical for the thin space-charge layers. \u0000 \u0000 \u0000 \u0000[Russian Text Ignored].","PeriodicalId":10913,"journal":{"name":"Day 1 Wed, February 23, 2022","volume":"30 2 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1986-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78185832","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The quantum theory of free carrier absorption in quasi-two-dimensional structures like thin films, layered heterojunctions, and inversion layers is generalized to the cases when the carriers are scattered by polar optical phonons, piezoelectric phonons, and nonpolar optical phonons. The obtained results are compared with those of the quantum theory of free-carrier absorption in a bulk semiconductor and it is found that the absorption coefficient increases when the width of the layer or thin film decreases in all the cases. Die Quantentheorie der Absorption freier Trager in quasi-zweidimensionalen Strukturen, wie duinnen Schichten, geschichteten Heterouibergangen und Inversionsschichten, wird auf die Falle verallgemeinert, wo die Trager durch polare optische Phononen, piezoelektrische Phononen und nichtpolare optische Phononen gestreut werden. Die erhaltenen Ergebnisse werden mit denen der Quantentheorie der Absorption freier Trager in einem Volumenhalbleiter verglichen, und es wird gefunden, das der Absorptionskoeffizient anwachst, wenn in alien Fallen die Breite der Schicht oder des duinnen Films abnimmt.
{"title":"Quantum Theory of Free-Carrier Absorption in Quasi-Two-Dimensional Semiconducting Structures","authors":"C. Giner, M. Antón","doi":"10.1002/PSSB.2221330217","DOIUrl":"https://doi.org/10.1002/PSSB.2221330217","url":null,"abstract":"The quantum theory of free carrier absorption in quasi-two-dimensional structures like thin films, layered heterojunctions, and inversion layers is generalized to the cases when the carriers are scattered by polar optical phonons, piezoelectric phonons, and nonpolar optical phonons. The obtained results are compared with those of the quantum theory of free-carrier absorption in a bulk semiconductor and it is found that the absorption coefficient increases when the width of the layer or thin film decreases in all the cases. \u0000 \u0000 \u0000 \u0000Die Quantentheorie der Absorption freier Trager in quasi-zweidimensionalen Strukturen, wie duinnen Schichten, geschichteten Heterouibergangen und Inversionsschichten, wird auf die Falle verallgemeinert, wo die Trager durch polare optische Phononen, piezoelektrische Phononen und nichtpolare optische Phononen gestreut werden. Die erhaltenen Ergebnisse werden mit denen der Quantentheorie der Absorption freier Trager in einem Volumenhalbleiter verglichen, und es wird gefunden, das der Absorptionskoeffizient anwachst, wenn in alien Fallen die Breite der Schicht oder des duinnen Films abnimmt.","PeriodicalId":10913,"journal":{"name":"Day 1 Wed, February 23, 2022","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1986-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90250188","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A Projective Procedure for Embedding a Finite Cluster in an Effective Medium","authors":"G. Grosso, G. Parravicini","doi":"10.1002/PSSB.2221330248","DOIUrl":"https://doi.org/10.1002/PSSB.2221330248","url":null,"abstract":"","PeriodicalId":10913,"journal":{"name":"Day 1 Wed, February 23, 2022","volume":"10 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1986-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78965796","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
La structure electronique de ces elements dans Si est decrite par une methode parametrisee de reseau de Bethe d'amas a liaisons fortes. Cette methode est basee sur la description explicite d'un amas representant un site interstitiel tetraedrique typique du silicium
{"title":"A CBLM Approach to the Electronic Structure of Transition Metal Impurities in Silicon","authors":"S. Wilke, J. Masek, B. Velicky","doi":"10.1002/PSSB.2221330249","DOIUrl":"https://doi.org/10.1002/PSSB.2221330249","url":null,"abstract":"La structure electronique de ces elements dans Si est decrite par une methode parametrisee de reseau de Bethe d'amas a liaisons fortes. Cette methode est basee sur la description explicite d'un amas representant un site interstitiel tetraedrique typique du silicium","PeriodicalId":10913,"journal":{"name":"Day 1 Wed, February 23, 2022","volume":"321 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1986-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80252912","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A linearised form for the screened form factors of electron-ion interaction is proposed and applied for the prediction of superconducting state parameters viz. electron-phonon coupling strength λ, Coulomb pseudopotential μ*, transition temperature Tc, isotope effect exponent α, and the interaction strength N0V. Good agreement between the computed results, experimental data, and the results of Allen and Cohen based on the HA potential, supports the proposition. Es wird eine linearisierte Form fur die abgeschirmten Formfaktoren der Elektronen-Ionen-Wechselwirkung vorgeschlagen. Sie wird fur die Vorhersage der Parameter des Supraleitungs-zustandes, z.B. der Elektronen-Phononen-Kopplungsstarke λ, des Coulombpseudopotentials μ*, der Ubergangstemperatur Tc, dem Exponenten α des Isotopeneffekts und der Wechselwirkungsstarke N0V, benutzt. Die gute Ubereinstimmung zwischen den erhaltenen Ergebnissen, experimentellen Werten und den Ergebnissen von Allen und Cohen auf der Grundlage des HA-Potentials, bestatigt den Vorschlag.
A linearised形式for the screened形式属于of electron-ion interaction is proposed and applied for the prediction of superconducting州余数viz. electron-phonon coupling strengthλ,Coulomb pseudopotentialμ*飞车temperature Tc,同位素effect exponentα,and the interaction strength N0V .好极了，以计算机为基础的结果是，实验数据为所有人的结果和以婚姻为可能，是的文章提出了一个对电子离子相互作用包化因素的线程构造方法。她会给预测Supraleitungs-zustandes的参数,比如Elektronen-Phononen-Kopplungsstarkeλ的Coulombpseudopotentialsμ*,Ubergangstemperatur Tc Isotopeneffekts的度指数α和Wechselwirkungsstarke N0V,利用.全部和科恩都有效能的启示、实验价值和所有人与科恩的启示，都对这一建议深表认可。
{"title":"Linearised Screened Pseudopotential and Superconducting State Parameters of a Number of Metals","authors":"Renu Sharma, K. S. Sharma, L. Dass","doi":"10.1002/PSSB.2221330232","DOIUrl":"https://doi.org/10.1002/PSSB.2221330232","url":null,"abstract":"A linearised form for the screened form factors of electron-ion interaction is proposed and applied for the prediction of superconducting state parameters viz. electron-phonon coupling strength λ, Coulomb pseudopotential μ*, transition temperature Tc, isotope effect exponent α, and the interaction strength N0V. Good agreement between the computed results, experimental data, and the results of Allen and Cohen based on the HA potential, supports the proposition. Es wird eine linearisierte Form fur die abgeschirmten Formfaktoren der Elektronen-Ionen-Wechselwirkung vorgeschlagen. Sie wird fur die Vorhersage der Parameter des Supraleitungs-zustandes, z.B. der Elektronen-Phononen-Kopplungsstarke λ, des Coulombpseudopotentials μ*, der Ubergangstemperatur Tc, dem Exponenten α des Isotopeneffekts und der Wechselwirkungsstarke N0V, benutzt. Die gute Ubereinstimmung zwischen den erhaltenen Ergebnissen, experimentellen Werten und den Ergebnissen von Allen und Cohen auf der Grundlage des HA-Potentials, bestatigt den Vorschlag.","PeriodicalId":10913,"journal":{"name":"Day 1 Wed, February 23, 2022","volume":"23 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1986-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76152092","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A detailed computer simulation of the catch-up effect for a 1 GeV proton beam in a uniformly bent silicon crystal is performed. The dependences of the efficiency of proton catch-up in the channeling regime on bending radius of the crystal and on incidence angle of the beam are reported. [Russian Text Ignored].
{"title":"Computer Simulation of Proton Channeling Catch-Up in Bent Crystals","authors":"A. Taratin, S. A. Vorobiev","doi":"10.1002/PSSB.2221330210","DOIUrl":"https://doi.org/10.1002/PSSB.2221330210","url":null,"abstract":"A detailed computer simulation of the catch-up effect for a 1 GeV proton beam in a uniformly bent silicon crystal is performed. The dependences of the efficiency of proton catch-up in the channeling regime on bending radius of the crystal and on incidence angle of the beam are reported. \u0000 \u0000 \u0000 \u0000[Russian Text Ignored].","PeriodicalId":10913,"journal":{"name":"Day 1 Wed, February 23, 2022","volume":"22 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1986-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84603175","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Temperature Effect on the Elastic Stiffness Constants of Al","authors":"T. Soma, K. Wada, H. Kagaya","doi":"10.1002/PSSB.2221330243","DOIUrl":"https://doi.org/10.1002/PSSB.2221330243","url":null,"abstract":"","PeriodicalId":10913,"journal":{"name":"Day 1 Wed, February 23, 2022","volume":"411 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1986-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79926336","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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