Pub Date : 1986-06-02DOI: 10.1109/MWSYM.1986.1132260
D. C. Buck, M. Cross
We discuss the effects of multimode fiber-optic coupling on optical injection-locked GaAs MESFET oscillators. Locking frequency range data are presented and the effects of laser mode locking and fiber modal microphone discussed. The effects of FET photodetection efficiency as a function of modulation frequency are identified together with means for locking range enhancement.
{"title":"Optical Injection Locking of FET Oscillators Using Fiber Optics","authors":"D. C. Buck, M. Cross","doi":"10.1109/MWSYM.1986.1132260","DOIUrl":"https://doi.org/10.1109/MWSYM.1986.1132260","url":null,"abstract":"We discuss the effects of multimode fiber-optic coupling on optical injection-locked GaAs MESFET oscillators. Locking frequency range data are presented and the effects of laser mode locking and fiber modal microphone discussed. The effects of FET photodetection efficiency as a function of modulation frequency are identified together with means for locking range enhancement.","PeriodicalId":109161,"journal":{"name":"1986 IEEE MTT-S International Microwave Symposium Digest","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1986-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122683479","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1986-06-02DOI: 10.1109/MWSYM.1986.1132149
F. Gardiol
The purpose of this survey is to provide a general idea about present microstrip research in Europe, emphasizing computer-aided design. Attention is drawn to the particularities of microstrip, which make it a particularly difficult field. The survey covers the description of microstrip lines, discontinuities and patch antennas, applications to circuit layout, followed by a brief description of MIC and nonlinear CAD.
{"title":"Microstrip Computer-Aided Design in Europe","authors":"F. Gardiol","doi":"10.1109/MWSYM.1986.1132149","DOIUrl":"https://doi.org/10.1109/MWSYM.1986.1132149","url":null,"abstract":"The purpose of this survey is to provide a general idea about present microstrip research in Europe, emphasizing computer-aided design. Attention is drawn to the particularities of microstrip, which make it a particularly difficult field. The survey covers the description of microstrip lines, discontinuities and patch antennas, applications to circuit layout, followed by a brief description of MIC and nonlinear CAD.","PeriodicalId":109161,"journal":{"name":"1986 IEEE MTT-S International Microwave Symposium Digest","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1986-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123036826","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1986-06-02DOI: 10.1109/MWSYM.1986.1132304
M. Salcman, G. Neuberth, R. W. Nudelman, F. T. Ferraro, M. Hartman
Interstitial microwave hyperthermia may prove to be an important therapy for malignant brain tumors. For safety and efficiency, the size and number of intracranial microwave antennas needs to be limited. Low power swept frequency measurements of VSWR were carried out in the brains of anesthetized cats and dogs utilizing stereotactically placed monopole antennas. The coupling efficiency of antennas at any frequency was degraded (VSWR>2:1) if a length of antenna less than 2h (h =lambda/4 · /spl radic/e) was inserted or if a plastic catheter was utilized. Such measurements indicate that (h) can be shortened 25% from the resonant length without seriously degrading antenna performance. The total length can be halved if a catheter with a high dielectric is used. High power tests (2 -10w) of short antennnas at 915 MHz in a ceramic catheter (e = 10) at 45-50°C produce thermal fields approximately 2 cm in diameter in normal brain. It should be possible to efficiently and safely heat human brain tumors of average size utilizing these antennas and catheters at 915 MHz .
{"title":"Swept Frequency Measurements of Microwave Antennas in Feline & Canine Brain","authors":"M. Salcman, G. Neuberth, R. W. Nudelman, F. T. Ferraro, M. Hartman","doi":"10.1109/MWSYM.1986.1132304","DOIUrl":"https://doi.org/10.1109/MWSYM.1986.1132304","url":null,"abstract":"Interstitial microwave hyperthermia may prove to be an important therapy for malignant brain tumors. For safety and efficiency, the size and number of intracranial microwave antennas needs to be limited. Low power swept frequency measurements of VSWR were carried out in the brains of anesthetized cats and dogs utilizing stereotactically placed monopole antennas. The coupling efficiency of antennas at any frequency was degraded (VSWR>2:1) if a length of antenna less than 2h (h =lambda/4 · /spl radic/e) was inserted or if a plastic catheter was utilized. Such measurements indicate that (h) can be shortened 25% from the resonant length without seriously degrading antenna performance. The total length can be halved if a catheter with a high dielectric is used. High power tests (2 -10w) of short antennnas at 915 MHz in a ceramic catheter (e = 10) at 45-50°C produce thermal fields approximately 2 cm in diameter in normal brain. It should be possible to efficiently and safely heat human brain tumors of average size utilizing these antennas and catheters at 915 MHz .","PeriodicalId":109161,"journal":{"name":"1986 IEEE MTT-S International Microwave Symposium Digest","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1986-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115192611","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1986-06-02DOI: 10.1109/MWSYM.1986.1132315
E. Chase, W. Kennan
This paper describes the design, implemental ion and performance of a power distributed amplifier with a minimum gain of 5dB, input and output VSWR less than 1.5:1, and greater than 22dBm of 1dB compressed power over the 2 to 18GHz band. This amplifier makes use of several circuit design advances to improve both bandwidth and power capability and measures 1.0mm by 1.4mm (1.4 sq. mm).
{"title":"A Power Distributed Amplifier Using Constant-R Networks","authors":"E. Chase, W. Kennan","doi":"10.1109/MWSYM.1986.1132315","DOIUrl":"https://doi.org/10.1109/MWSYM.1986.1132315","url":null,"abstract":"This paper describes the design, implemental ion and performance of a power distributed amplifier with a minimum gain of 5dB, input and output VSWR less than 1.5:1, and greater than 22dBm of 1dB compressed power over the 2 to 18GHz band. This amplifier makes use of several circuit design advances to improve both bandwidth and power capability and measures 1.0mm by 1.4mm (1.4 sq. mm).","PeriodicalId":109161,"journal":{"name":"1986 IEEE MTT-S International Microwave Symposium Digest","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1986-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115704218","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1986-06-02DOI: 10.1109/MWSYM.1986.1132268
T. Trinh, E. Benko, W. Wong
A high performance Ka-band millimeter-wave integrated circuit FMCW transceiver has been developed. The transceiver consists of a voltage-controlled microstrip Gunn oscillator (Gunn VCO), a 10 dB coupler, a circulator, a single-balanced mixer, a low pass filter and a single-stage IF amplifier. Both packaged and beamlead varactor diodes for the Gunn VCO were evaluated. The entire RF circuit is printed on a single ferrite substrate using thin film microstrip IC technology and integrated into a small module. The transceiver produces more than 20 dBm CW output power via a coaxial connector at 35 GHz for tuning bandwidth exceeding 1 GHz. The RF-to-IF gain is at least 23 dB using a monolithic IF preamplifier, and the SSB noise figure is better than 12 dB. The unit is hermetically shielded in a 1.2 x 1.5 x 0.375 inch (3 x 3.8 x 0.95 cm) enclosure.
研制了一种高性能ka波段毫米波集成电路FMCW收发器。该收发器由压控微带Gunn振荡器(Gunn VCO)、10db耦合器、环行器、单平衡混频器、低通滤波器和单级中频放大器组成。对Gunn VCO的封装二极管和束引变容二极管进行了评估。整个射频电路采用薄膜微带IC技术印刷在单一铁氧体衬底上，并集成到一个小模块中。该收发器通过35 GHz的同轴连接器产生超过20 dBm的连续波输出功率，可调谐带宽超过1 GHz。采用单片中频前置放大器，RF-to-IF增益至少为23 dB, SSB噪声系数优于12 dB。该装置密封屏蔽在1.2 x 1.5 x 0.375英寸(3 x 3.8 x 0.95厘米)的外壳中。
{"title":"Ka-Band Microstrip Integrated Circuit FMCW Transceiver","authors":"T. Trinh, E. Benko, W. Wong","doi":"10.1109/MWSYM.1986.1132268","DOIUrl":"https://doi.org/10.1109/MWSYM.1986.1132268","url":null,"abstract":"A high performance Ka-band millimeter-wave integrated circuit FMCW transceiver has been developed. The transceiver consists of a voltage-controlled microstrip Gunn oscillator (Gunn VCO), a 10 dB coupler, a circulator, a single-balanced mixer, a low pass filter and a single-stage IF amplifier. Both packaged and beamlead varactor diodes for the Gunn VCO were evaluated. The entire RF circuit is printed on a single ferrite substrate using thin film microstrip IC technology and integrated into a small module. The transceiver produces more than 20 dBm CW output power via a coaxial connector at 35 GHz for tuning bandwidth exceeding 1 GHz. The RF-to-IF gain is at least 23 dB using a monolithic IF preamplifier, and the SSB noise figure is better than 12 dB. The unit is hermetically shielded in a 1.2 x 1.5 x 0.375 inch (3 x 3.8 x 0.95 cm) enclosure.","PeriodicalId":109161,"journal":{"name":"1986 IEEE MTT-S International Microwave Symposium Digest","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1986-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130789500","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1986-06-02DOI: 10.1109/MWSYM.1986.1132121
B. E. Sigmon, T.W. Van Alstyne
The impedance transformation properties of parallel coupled lines have been used to develop broadband reflection amplifiers operating in X-band. These amplifiers have demonstrated peak powers of 40 watts (single IMPATT diode), 63 watts (two diode combiner), and 110 watts (four diode combiner). 3 dB bandwidths of 1.4 to 3 GHz (14 to 30%) have been attained.
{"title":"Development of a Pulsed IMPATT Diode Amplifier","authors":"B. E. Sigmon, T.W. Van Alstyne","doi":"10.1109/MWSYM.1986.1132121","DOIUrl":"https://doi.org/10.1109/MWSYM.1986.1132121","url":null,"abstract":"The impedance transformation properties of parallel coupled lines have been used to develop broadband reflection amplifiers operating in X-band. These amplifiers have demonstrated peak powers of 40 watts (single IMPATT diode), 63 watts (two diode combiner), and 110 watts (four diode combiner). 3 dB bandwidths of 1.4 to 3 GHz (14 to 30%) have been attained.","PeriodicalId":109161,"journal":{"name":"1986 IEEE MTT-S International Microwave Symposium Digest","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1986-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131733907","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1986-06-02DOI: 10.1109/MWSYM.1986.1132246
B. R. Mcavoy
Advances in microwave acoustic technology and the attendant progress in device development have been steady for about the past two decades. Progress has been evident not only in the surface acoustic wave (SAW) area but in bulk acoustic wave (BAW) technology as well. This progress has resulted in higher frequencies of operation, more efficient and compact devices for more demanding systems applications. Examples of such devices and applications are described in this paper.
{"title":"Microwave Acoustic Devices in Systems","authors":"B. R. Mcavoy","doi":"10.1109/MWSYM.1986.1132246","DOIUrl":"https://doi.org/10.1109/MWSYM.1986.1132246","url":null,"abstract":"Advances in microwave acoustic technology and the attendant progress in device development have been steady for about the past two decades. Progress has been evident not only in the surface acoustic wave (SAW) area but in bulk acoustic wave (BAW) technology as well. This progress has resulted in higher frequencies of operation, more efficient and compact devices for more demanding systems applications. Examples of such devices and applications are described in this paper.","PeriodicalId":109161,"journal":{"name":"1986 IEEE MTT-S International Microwave Symposium Digest","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1986-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123472379","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1986-06-02DOI: 10.1109/MWSYM.1986.1132154
F. Hernández-Gil, J. Perez
The external quality factor of a cylindrical dielectric resonator coupled to a finline is evaluated using the finite element method to analyse the transmission line and the resonator. The effects of varying the location of the resonator on the coupling are studied. Experimental results compared with the theoretical ones are presented.
{"title":"Analysis of the Coupling Coefficient Between a Cylindrical Dielectric Resonator and a Fin-Line","authors":"F. Hernández-Gil, J. Perez","doi":"10.1109/MWSYM.1986.1132154","DOIUrl":"https://doi.org/10.1109/MWSYM.1986.1132154","url":null,"abstract":"The external quality factor of a cylindrical dielectric resonator coupled to a finline is evaluated using the finite element method to analyse the transmission line and the resonator. The effects of varying the location of the resonator on the coupling are studied. Experimental results compared with the theoretical ones are presented.","PeriodicalId":109161,"journal":{"name":"1986 IEEE MTT-S International Microwave Symposium Digest","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1986-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123482490","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1986-06-02DOI: 10.1109/MWSYM.1986.1132219
M. Avasarala, D. Day
A new 7.2mm GaAs FET chip with high gain, power, efficiency and low thermal resistance has been developed. Internally matched packaged devices using one and two such FETs have been developed for the 10.7-11.7 and 14-14 .5GHz bands. At 11.7GHz the 7.2mm and 14.4mm devices have achieved power gain, and power-added-efficiency of 35.3dBm, 8dB, 33% and 37.8dBm, 8.0dB and 31.5% respectively at the 1dB gain compression point . At 14.5GHz the results are 34dBm, 7dB, 25% and 37.0dBm, 6dB and 18.5% respectively at the 1dB gain compression point.
{"title":"2.5-Watt and 5- Watt Internally Matched GaAs FETs for 10.7-11.7 and 14-14.5 GHz Bands","authors":"M. Avasarala, D. Day","doi":"10.1109/MWSYM.1986.1132219","DOIUrl":"https://doi.org/10.1109/MWSYM.1986.1132219","url":null,"abstract":"A new 7.2mm GaAs FET chip with high gain, power, efficiency and low thermal resistance has been developed. Internally matched packaged devices using one and two such FETs have been developed for the 10.7-11.7 and 14-14 .5GHz bands. At 11.7GHz the 7.2mm and 14.4mm devices have achieved power gain, and power-added-efficiency of 35.3dBm, 8dB, 33% and 37.8dBm, 8.0dB and 31.5% respectively at the 1dB gain compression point . At 14.5GHz the results are 34dBm, 7dB, 25% and 37.0dBm, 6dB and 18.5% respectively at the 1dB gain compression point.","PeriodicalId":109161,"journal":{"name":"1986 IEEE MTT-S International Microwave Symposium Digest","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1986-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128138130","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1986-06-02DOI: 10.1109/MWSYM.1986.1132167
Feng Zheng-he
The paper describes a new method which combines Boundary Element Method (BEM) with network method and is called "Network-Boundary Element Method". This hybrid method needs small amount of nodes, can get network parameter directly. It can be used to solve planar circuit problems and discontinuous problems of transmission lines. Some examples are given in the paper.
{"title":"An Analysis of EM Wave Circuit Problems by Network-Boundary Element Method","authors":"Feng Zheng-he","doi":"10.1109/MWSYM.1986.1132167","DOIUrl":"https://doi.org/10.1109/MWSYM.1986.1132167","url":null,"abstract":"The paper describes a new method which combines Boundary Element Method (BEM) with network method and is called \"Network-Boundary Element Method\". This hybrid method needs small amount of nodes, can get network parameter directly. It can be used to solve planar circuit problems and discontinuous problems of transmission lines. Some examples are given in the paper.","PeriodicalId":109161,"journal":{"name":"1986 IEEE MTT-S International Microwave Symposium Digest","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1986-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133086071","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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