Pub Date : 1986-06-02DOI: 10.1109/MWSYM.1986.1132165
Liu Dongtien
In this paper the author has brought forward three new types of 3-dB directional couplers suitable to microstrip circuit. The originality of these couplers is that by using these couplers extraordinary close coupling which is less than 1-d/sup B/ can easily be achieved. An analysis is given to the electric field distribution and the characteristic impedance of the coupling circuit. The designing curves and the design of the 3-dB coupler with experimental data are provided in the paper.
{"title":"New Types of 3-dB Directional Couplers of Microstrip Transmission Lines","authors":"Liu Dongtien","doi":"10.1109/MWSYM.1986.1132165","DOIUrl":"https://doi.org/10.1109/MWSYM.1986.1132165","url":null,"abstract":"In this paper the author has brought forward three new types of 3-dB directional couplers suitable to microstrip circuit. The originality of these couplers is that by using these couplers extraordinary close coupling which is less than 1-d/sup B/ can easily be achieved. An analysis is given to the electric field distribution and the characteristic impedance of the coupling circuit. The designing curves and the design of the 3-dB coupler with experimental data are provided in the paper.","PeriodicalId":109161,"journal":{"name":"1986 IEEE MTT-S International Microwave Symposium Digest","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1986-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133199964","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1986-06-02DOI: 10.1109/MWSYM.1986.1132205
H. Shigesawa, M. Tsuji, K. Takiyama
We propose here a new idea to design filters which consist of low permittivity dielectric resonators placed in the two paths which are realized by a partial H-plane bifurcation in a rectangular waveguide. This type of filters is regarded as the parallel connection of two evanescent - mode waveguide filters. This paper will try to design such a filter with the Chebyshev's passband response and also with the stopband response with attenuation poles at desired frequencies, and practical performance aspects of this type of filters will be discussed from the view points of both analytical methods and experiments in the X-band.
{"title":"Two Path Cutoff Waveguide Resonator Filters with Attenuation Poles","authors":"H. Shigesawa, M. Tsuji, K. Takiyama","doi":"10.1109/MWSYM.1986.1132205","DOIUrl":"https://doi.org/10.1109/MWSYM.1986.1132205","url":null,"abstract":"We propose here a new idea to design filters which consist of low permittivity dielectric resonators placed in the two paths which are realized by a partial H-plane bifurcation in a rectangular waveguide. This type of filters is regarded as the parallel connection of two evanescent - mode waveguide filters. This paper will try to design such a filter with the Chebyshev's passband response and also with the stopband response with attenuation poles at desired frequencies, and practical performance aspects of this type of filters will be discussed from the view points of both analytical methods and experiments in the X-band.","PeriodicalId":109161,"journal":{"name":"1986 IEEE MTT-S International Microwave Symposium Digest","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1986-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124326174","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1986-06-02DOI: 10.1109/MWSYM.1986.1132176
R. Harrison, W. Cornish
A one-and-one-third-octave frequency halver has been developed to accommodate the 7-18 GHz input band, the widest bandwidth yet reported. Dynamic range capabilities of varactor halvers can be increased from 7 dB to about 20 dB by means of a novel "sliding bias" circuit.
{"title":"Varactor Frequency Halvers with Enhanced Bandwidth and Dynamic Range","authors":"R. Harrison, W. Cornish","doi":"10.1109/MWSYM.1986.1132176","DOIUrl":"https://doi.org/10.1109/MWSYM.1986.1132176","url":null,"abstract":"A one-and-one-third-octave frequency halver has been developed to accommodate the 7-18 GHz input band, the widest bandwidth yet reported. Dynamic range capabilities of varactor halvers can be increased from 7 dB to about 20 dB by means of a novel \"sliding bias\" circuit.","PeriodicalId":109161,"journal":{"name":"1986 IEEE MTT-S International Microwave Symposium Digest","volume":"147 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1986-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133947309","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1986-06-02DOI: 10.1109/MWSYM.1986.1132114
A. Riddle, R. Trew
A knowledge of low frequency noise in FETs is essential in designing oscillators, multipliers, and broadband amplifiers for fiber optics. Measurements on commercial and research GaAs FETs are presented which show up to 25 db differences in the 1/f noise of similarly sized devices. The presence of discrete traps creates even larger differences. The importance of material quality over FET size is demonstrated. Simple equations are presented which describe the noise sources and noise figure of an FET at all frequencies.
{"title":"Low Frequency Noise Measurements of GaAs FETs","authors":"A. Riddle, R. Trew","doi":"10.1109/MWSYM.1986.1132114","DOIUrl":"https://doi.org/10.1109/MWSYM.1986.1132114","url":null,"abstract":"A knowledge of low frequency noise in FETs is essential in designing oscillators, multipliers, and broadband amplifiers for fiber optics. Measurements on commercial and research GaAs FETs are presented which show up to 25 db differences in the 1/f noise of similarly sized devices. The presence of discrete traps creates even larger differences. The importance of material quality over FET size is demonstrated. Simple equations are presented which describe the noise sources and noise figure of an FET at all frequencies.","PeriodicalId":109161,"journal":{"name":"1986 IEEE MTT-S International Microwave Symposium Digest","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1986-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128569844","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1986-06-02DOI: 10.1109/MWSYM.1986.1132174
G. C. Dipiazza, P. Onno
A novel diode tunable filter is described using quarter wavelength tapped stub resonator sections and digital microprocessor control. Fine resolution electronic tuning in 25KHz steps of a 2MHz-3dB transmission bandwidth from 270-400MHz was achieved with 50 watts CW RF power, 10dB average insertion loss and 42dB minimum rejection skirts, 6MHz from the center frequency.
{"title":"50 Watt/CW Diode Tuned UHF Filter","authors":"G. C. Dipiazza, P. Onno","doi":"10.1109/MWSYM.1986.1132174","DOIUrl":"https://doi.org/10.1109/MWSYM.1986.1132174","url":null,"abstract":"A novel diode tunable filter is described using quarter wavelength tapped stub resonator sections and digital microprocessor control. Fine resolution electronic tuning in 25KHz steps of a 2MHz-3dB transmission bandwidth from 270-400MHz was achieved with 50 watts CW RF power, 10dB average insertion loss and 42dB minimum rejection skirts, 6MHz from the center frequency.","PeriodicalId":109161,"journal":{"name":"1986 IEEE MTT-S International Microwave Symposium Digest","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1986-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116661789","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1986-06-02DOI: 10.1109/MWSYM.1986.1132132
M. Abouzahra
This paper describes the design and construction of a novel, high performance broadband, stripline, 8x8 port feed network. Hybrid ring couplers with improved performance are used as building blocks. The division of the circuit into two stackable even-mode and odd-mode subcircuits has greatly simplified the realization and the testing of the feed network. Experimental results for various phase modes are presented.
{"title":"Design and Performance of a Wideband Multilayer Feed Network","authors":"M. Abouzahra","doi":"10.1109/MWSYM.1986.1132132","DOIUrl":"https://doi.org/10.1109/MWSYM.1986.1132132","url":null,"abstract":"This paper describes the design and construction of a novel, high performance broadband, stripline, 8x8 port feed network. Hybrid ring couplers with improved performance are used as building blocks. The division of the circuit into two stackable even-mode and odd-mode subcircuits has greatly simplified the realization and the testing of the feed network. Experimental results for various phase modes are presented.","PeriodicalId":109161,"journal":{"name":"1986 IEEE MTT-S International Microwave Symposium Digest","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1986-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114634047","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1986-06-02DOI: 10.1109/MWSYM.1986.1132241
C. Oness, W. E. Hord, C. Boyd
Reciprocal rotary field phase shifters have been developed at S-band frequencies with peak power capacity of 40 KW, average power of 600 W and switching times of 100 microseconds. Data is presented on a production lot of these devices showing the statistical properties of the peak and rms phase error and the peak and average insertion loss.
{"title":"Medium Power S-Band Rotary Field Ferrite Phase Shifters","authors":"C. Oness, W. E. Hord, C. Boyd","doi":"10.1109/MWSYM.1986.1132241","DOIUrl":"https://doi.org/10.1109/MWSYM.1986.1132241","url":null,"abstract":"Reciprocal rotary field phase shifters have been developed at S-band frequencies with peak power capacity of 40 KW, average power of 600 W and switching times of 100 microseconds. Data is presented on a production lot of these devices showing the statistical properties of the peak and rms phase error and the peak and average insertion loss.","PeriodicalId":109161,"journal":{"name":"1986 IEEE MTT-S International Microwave Symposium Digest","volume":"2015 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1986-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114653060","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1986-06-02DOI: 10.1109/MWSYM.1986.1132183
T. S. Howard, A. Pavio
A novel broadband mixer topology, which can be implemented using either monolithic or discrete microwave integrated circuit methods, has been developed using distributed design techniques. The mixer exhibits excellent conversion gain and frequency response characteristics with signal handling capabilities and LO drive requirements similar to conventional diode double-balanced mixers.
{"title":"A Distributed 1-12 GHz Dual-Gate FET Mixer","authors":"T. S. Howard, A. Pavio","doi":"10.1109/MWSYM.1986.1132183","DOIUrl":"https://doi.org/10.1109/MWSYM.1986.1132183","url":null,"abstract":"A novel broadband mixer topology, which can be implemented using either monolithic or discrete microwave integrated circuit methods, has been developed using distributed design techniques. The mixer exhibits excellent conversion gain and frequency response characteristics with signal handling capabilities and LO drive requirements similar to conventional diode double-balanced mixers.","PeriodicalId":109161,"journal":{"name":"1986 IEEE MTT-S International Microwave Symposium Digest","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1986-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114743615","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1986-06-02DOI: 10.1109/MWSYM.1986.1132230
M. Minot
A method of measuring the thermal characteristics of microwave power FETs using temperature sensitive nematic liquid crystals is described. Measurements performed using this technique show thermal resistance not to be invariant, as often assumed.
{"title":"Thermal Characterization of Microwave Power FETs Using Nematic Liquid Crystals","authors":"M. Minot","doi":"10.1109/MWSYM.1986.1132230","DOIUrl":"https://doi.org/10.1109/MWSYM.1986.1132230","url":null,"abstract":"A method of measuring the thermal characteristics of microwave power FETs using temperature sensitive nematic liquid crystals is described. Measurements performed using this technique show thermal resistance not to be invariant, as often assumed.","PeriodicalId":109161,"journal":{"name":"1986 IEEE MTT-S International Microwave Symposium Digest","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1986-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127031196","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1986-06-02DOI: 10.1109/MWSYM.1986.1132228
C. Law, C. Aitchison
Power performance of a medium power GaAs MESFET is predicted over the frequency range from 2GHz to 16GHz using a non-linear model where the non-linearities represented by power series up to the third order are derived from D.C. and low-frequency measurements. The analysis employs the Volterra series representation up to the third order. Experimental verification is made on a NE9000 medium power MESFET device. The agreement between predicted and measured output power at one dB. gain compression is within +- 0.5dB across the 2-16GHz band.
{"title":"Prediction of Wideband Power Performance of MESFET Devices Using the Volterra Series Representation","authors":"C. Law, C. Aitchison","doi":"10.1109/MWSYM.1986.1132228","DOIUrl":"https://doi.org/10.1109/MWSYM.1986.1132228","url":null,"abstract":"Power performance of a medium power GaAs MESFET is predicted over the frequency range from 2GHz to 16GHz using a non-linear model where the non-linearities represented by power series up to the third order are derived from D.C. and low-frequency measurements. The analysis employs the Volterra series representation up to the third order. Experimental verification is made on a NE9000 medium power MESFET device. The agreement between predicted and measured output power at one dB. gain compression is within +- 0.5dB across the 2-16GHz band.","PeriodicalId":109161,"journal":{"name":"1986 IEEE MTT-S International Microwave Symposium Digest","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1986-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121637402","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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