Cristina V. Manzano, Alba Díaz‐Lobo, Marta Gil‐García, Óscar Rodríguez de la Fuente, Ángel Morales‐Sabio, Marisol Martin‐Gonzalez
All‐day passive daytime radiative coolers (PDRC) offer a promising solution for energy‐free cooling of buildings and devices. This study investigates the use of various cellulose‐derivative networks to achieve optimal and stable cooling performance. These results showed that the mixed cellulose ester network has a maximum solar reflectance of 97%. While cellulose acetate network has a maximum infrared emissivity of 96% in the atmospheric transparency window band, which is a near‐perfect infrared emitter, the nitrocellulose network shows the highest cooling temperature, with a significant reduction of 14 °C from the ambient temperature and a power of 124 W·m−2 during the daytime and at night of 7.7 °C and 72.8 W·m−2. This study also analyzes the dampness's effect on the cooling performance of cellulose‐derivative networks. The cooling performance of the nitrocellulose network drops ≈ 3 °C (from 14 to 11.3 °C) when the relative humidity of the day exceeds ≈ 30% is observed. These findings indicate that the capacity of a material to absorb water from the surrounding air significantly influences its performance as a passive cooler, primarily due to changes in its optical properties. This is an important insight, as it highlights the need to consider environmental factors like relative humidity and sample hydrophobicity for PDRC systems.
{"title":"Performance and Relative Humidity Impact of Cellulose‐Derivative Networks in All‐Day Passive Radiative Cooling","authors":"Cristina V. Manzano, Alba Díaz‐Lobo, Marta Gil‐García, Óscar Rodríguez de la Fuente, Ángel Morales‐Sabio, Marisol Martin‐Gonzalez","doi":"10.1002/adom.202400551","DOIUrl":"https://doi.org/10.1002/adom.202400551","url":null,"abstract":"All‐day passive daytime radiative coolers (PDRC) offer a promising solution for energy‐free cooling of buildings and devices. This study investigates the use of various cellulose‐derivative networks to achieve optimal and stable cooling performance. These results showed that the mixed cellulose ester network has a maximum solar reflectance of 97%. While cellulose acetate network has a maximum infrared emissivity of 96% in the atmospheric transparency window band, which is a near‐perfect infrared emitter, the nitrocellulose network shows the highest cooling temperature, with a significant reduction of 14 °C from the ambient temperature and a power of 124 W·m<jats:sup>−2</jats:sup> during the daytime and at night of 7.7 °C and 72.8 W·m<jats:sup>−2</jats:sup>. This study also analyzes the dampness's effect on the cooling performance of cellulose‐derivative networks. The cooling performance of the nitrocellulose network drops ≈ 3 °C (from 14 to 11.3 °C) when the relative humidity of the day exceeds ≈ 30% is observed. These findings indicate that the capacity of a material to absorb water from the surrounding air significantly influences its performance as a passive cooler, primarily due to changes in its optical properties. This is an important insight, as it highlights the need to consider environmental factors like relative humidity and sample hydrophobicity for PDRC systems.","PeriodicalId":116,"journal":{"name":"Advanced Optical Materials","volume":null,"pages":null},"PeriodicalIF":9.0,"publicationDate":"2024-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141511780","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Photodetectors with good polarization detection ability are promising in many applications, such as remote sensing imaging and environmental monitoring. However, the traditional polarization detection systems fall short in meeting integration demands of the integrated‐circuits field due to additional optical elements. The emerging 2D materials with in‐plane anisotropic structures provide a possible method to fabricate remarkable polarization detectors. Modulating the band structure by gate voltage is an important strategy for developing optoelectronic devices. Herein, a polarized photodetector based on PdSe2/MoS2 out‐of‐plane heterojunction is fabricated. Due to its unique out‐of‐plane heterostructure, the device exhibits excellent photoresponse characteristics and polarization sensitivity, including an excellent responsivity of 10.19A/W, an extremely high external quantum efficiency of 2429%, a fast rise/decay time of 68/192 µs, and a high photocurrent anisotropy ratio of 3.09. Based on the adjustment of the built‐in electric field through gate voltage, the performance of the device can be accordingly modulated. As the gate voltage increases from −30 to 30 V, the responsivity gradually increases from 7.5 to 13A/W and the detectivity increases from 1.53 to 2.63 × 109Jones. Finally, its olarization imaging ability is demonstrated at different polarization angles. The findings indicate that PdSe2/MoS2 devices exhibit significant potential for polarized photoelectric detection.
{"title":"Gate‐Modulated and Polarization‐Sensitive Photodetector Based on the MoS2/PdSe2 Out‐Of‐Plane Van Der Waals Heterostructure","authors":"Chengdong Yin, Sixian He, Xiaofeng Fan, Yuke Xiao, Liancheng Zhao, Liming Gao","doi":"10.1002/adom.202401122","DOIUrl":"https://doi.org/10.1002/adom.202401122","url":null,"abstract":"Photodetectors with good polarization detection ability are promising in many applications, such as remote sensing imaging and environmental monitoring. However, the traditional polarization detection systems fall short in meeting integration demands of the integrated‐circuits field due to additional optical elements. The emerging 2D materials with in‐plane anisotropic structures provide a possible method to fabricate remarkable polarization detectors. Modulating the band structure by gate voltage is an important strategy for developing optoelectronic devices. Herein, a polarized photodetector based on PdSe<jats:sub>2</jats:sub>/MoS<jats:sub>2</jats:sub> out‐of‐plane heterojunction is fabricated. Due to its unique out‐of‐plane heterostructure, the device exhibits excellent photoresponse characteristics and polarization sensitivity, including an excellent responsivity of 10.19A/W, an extremely high external quantum efficiency of 2429%, a fast rise/decay time of 68/192 µs, and a high photocurrent anisotropy ratio of 3.09. Based on the adjustment of the built‐in electric field through gate voltage, the performance of the device can be accordingly modulated. As the gate voltage increases from −30 to 30 V, the responsivity gradually increases from 7.5 to 13A/W and the detectivity increases from 1.53 to 2.63 × 10<jats:sup>9</jats:sup>Jones. Finally, its olarization imaging ability is demonstrated at different polarization angles. The findings indicate that PdSe<jats:sub>2</jats:sub>/MoS<jats:sub>2</jats:sub> devices exhibit significant potential for polarized photoelectric detection.","PeriodicalId":116,"journal":{"name":"Advanced Optical Materials","volume":null,"pages":null},"PeriodicalIF":9.0,"publicationDate":"2024-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141511786","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Chiral self‐discrimination plays a critical role in supramolecular chemistry and materials science. However, an ideal strategy for achieving chiral self‐discrimination remains elusive due to the inevitable nonspecific binding of incorrect enantiomers, and insufficient intrinsic optical activity of chiral molecules. Herein, a novel 1,1′‐binaphthol (BINOL) derivative with an imide group fused at the peri‐position of one naphthol scaffold is developed, which combines the dual functionalities of aggregation‐induced emission characteristic of BINOLs, and high emission of 1,8‐naphthalimides. The multiple molecular recognition between two hydroxyl groups in BINOL units and two carbonyl groups in 1,8‐naphthalimide moieties endows the precise chiral self‐discrimination behaviors. As expected, the homochiral aggregates exhibit reversible phase transitions, switching from non‐emission to bright green emission upon absorption and desorption of methanol vapor. In contrast, the heterochiral conglomerates exhibit irreversible yellow emission changes due to the impact of chiral self‐discrimination. Such chiral self‐discrimination‐induced luminescence vapochromism can be further applied to high‐level anti‐counterfeiting and data encryption. This work provides a new perspective on smart chiral organic materials based on chiral self‐discrimination.
{"title":"Chiral Self‐Discrimination Induced Luminescence Vapochromism of Binaphthol Imides for Anti‐Counterfeiting and Data Encryption","authors":"Yang Zhang, Hong‐Ming Chen, Mei‐Jin Lin","doi":"10.1002/adom.202400898","DOIUrl":"https://doi.org/10.1002/adom.202400898","url":null,"abstract":"Chiral self‐discrimination plays a critical role in supramolecular chemistry and materials science. However, an ideal strategy for achieving chiral self‐discrimination remains elusive due to the inevitable nonspecific binding of incorrect enantiomers, and insufficient intrinsic optical activity of chiral molecules. Herein, a novel 1,1′‐binaphthol (BINOL) derivative with an imide group fused at the <jats:italic>peri</jats:italic>‐position of one naphthol scaffold is developed, which combines the dual functionalities of aggregation‐induced emission characteristic of BINOLs, and high emission of 1,8‐naphthalimides. The multiple molecular recognition between two hydroxyl groups in BINOL units and two carbonyl groups in 1,8‐naphthalimide moieties endows the precise chiral self‐discrimination behaviors. As expected, the homochiral aggregates exhibit reversible phase transitions, switching from non‐emission to bright green emission upon absorption and desorption of methanol vapor. In contrast, the heterochiral conglomerates exhibit irreversible yellow emission changes due to the impact of chiral self‐discrimination. Such chiral self‐discrimination‐induced luminescence vapochromism can be further applied to high‐level anti‐counterfeiting and data encryption. This work provides a new perspective on smart chiral organic materials based on chiral self‐discrimination.","PeriodicalId":116,"journal":{"name":"Advanced Optical Materials","volume":null,"pages":null},"PeriodicalIF":9.0,"publicationDate":"2024-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141511791","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Organic charge‐transfer (CT) co‐crystals have demonstrated remarkable physical properties and have found applications in numerous fields. Yet their utility as a Surface‐Enhanced Raman Spectroscopy (SERS) substrate, a powerful and versatile analytical tool, has never been explored. Herein, three twisted molecular donors are synthesized, that exhibit well‐controlled switchable optical properties including aggregation‐induced emission (AIE), mechanochromic luminescence (MCL), and color‐specific polymorphism. Rapid production of charge‐transfer co‐crystals is also established with a π‐acceptor TCNQ and utilized conceptually as a SERS substrate for methylene blue (MB) detection, exhibiting a very high enhancement factor of 109 and limit of detection of 10−13m, respectively, due to the presence of low‐lying excited state, exhibit an 80% CT character, originating from the HOMO of the co‐crystal and interacting with the LUMO of the MB molecule. This approach using CT co‐crystals as a SERS substrate presents newer frontiers that require minuscule levels of rapid detection and impact allied areas, helping us understand and optimize the fascinating properties of such multicomponent materials for newer technologies.
{"title":"Engineering Single Component Luminogens to Multicomponent Charge‐transfer Co‐crystal Substrate as New Frontiers for Sensitive SERS Detection","authors":"Debika Barman, Debasish Barman, Kalishankar Bhattacharyya, Parameswar Krishnan Iyer","doi":"10.1002/adom.202401352","DOIUrl":"https://doi.org/10.1002/adom.202401352","url":null,"abstract":"Organic charge‐transfer (CT) co‐crystals have demonstrated remarkable physical properties and have found applications in numerous fields. Yet their utility as a Surface‐Enhanced Raman Spectroscopy (SERS) substrate, a powerful and versatile analytical tool, has never been explored. Herein, three twisted molecular donors are synthesized, that exhibit well‐controlled switchable optical properties including aggregation‐induced emission (AIE), mechanochromic luminescence (MCL), and color‐specific polymorphism. Rapid production of charge‐transfer co‐crystals is also established with a π‐acceptor TCNQ and utilized conceptually as a SERS substrate for methylene blue (MB) detection, exhibiting a very high enhancement factor of 10<jats:sup>9</jats:sup> and limit of detection of 10<jats:sup>−13</jats:sup> <jats:sc>m,</jats:sc> respectively, due to the presence of low‐lying excited state, exhibit an 80% CT character, originating from the HOMO of the co‐crystal and interacting with the LUMO of the MB molecule. This approach using CT co‐crystals as a SERS substrate presents newer frontiers that require minuscule levels of rapid detection and impact allied areas, helping us understand and optimize the fascinating properties of such multicomponent materials for newer technologies.","PeriodicalId":116,"journal":{"name":"Advanced Optical Materials","volume":null,"pages":null},"PeriodicalIF":9.0,"publicationDate":"2024-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141511785","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yao Zhao, Yawen Zhang, Jie Yang, Yi Chen, Guqiang Pu, Yunsheng Wang, Dan Li, Wei Fan, Manman Fang, Jishan Wu, Zhen Li
Donor–acceptor (D–A) structure with charge transfer (CT) effect is widely utilized in the construction of organic luminescent materials. The adjustment of their CT effect and related luminescent property usually relies on the changes of molecular structure with different D or A moieties, which will lead to some uncertainties in structure‐property relationship. With the aim to explore the clear inherent luminescent mechanism for D–A molecule with CT effect, it is ideal that the regulation of intramolecular charge transfer in one same D–A molecule can be realized. Accordingly, three D–A type organic phosphorescence luminogens are designed and synthesized. Once being doped into different polymer matrixes, disparate charge transfer effects and related room temperature phosphorescence (RTP) properties can be achieved for a single molecule. Subsequent experiments confirm that different distributions of molecules with locally excited (LE) state and CT state are mainly responsible for their distinct RTP behaviors, exhibiting the well‐clarified structure‐property relationship of D–A type phosphorescence luminogens. Furthermore, the transition from CT to LE state can even be realized through chemical reaction, leading to the activated RTP effect for practical applications.
{"title":"The Role of Locally Excited State and Charge Transfer State in Organic Room Temperature Phosphorescence and Corresponding Applications","authors":"Yao Zhao, Yawen Zhang, Jie Yang, Yi Chen, Guqiang Pu, Yunsheng Wang, Dan Li, Wei Fan, Manman Fang, Jishan Wu, Zhen Li","doi":"10.1002/adom.202400980","DOIUrl":"https://doi.org/10.1002/adom.202400980","url":null,"abstract":"Donor–acceptor (D–A) structure with charge transfer (CT) effect is widely utilized in the construction of organic luminescent materials. The adjustment of their CT effect and related luminescent property usually relies on the changes of molecular structure with different D or A moieties, which will lead to some uncertainties in structure‐property relationship. With the aim to explore the clear inherent luminescent mechanism for D–A molecule with CT effect, it is ideal that the regulation of intramolecular charge transfer in one same D–A molecule can be realized. Accordingly, three D–A type organic phosphorescence luminogens are designed and synthesized. Once being doped into different polymer matrixes, disparate charge transfer effects and related room temperature phosphorescence (RTP) properties can be achieved for a single molecule. Subsequent experiments confirm that different distributions of molecules with locally excited (LE) state and CT state are mainly responsible for their distinct RTP behaviors, exhibiting the well‐clarified structure‐property relationship of D–A type phosphorescence luminogens. Furthermore, the transition from CT to LE state can even be realized through chemical reaction, leading to the activated RTP effect for practical applications.","PeriodicalId":116,"journal":{"name":"Advanced Optical Materials","volume":null,"pages":null},"PeriodicalIF":9.0,"publicationDate":"2024-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141511784","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Anna‐Lena Hofmann, Jakob Wolansky, Mike Hambsch, Felix Talnack, Eva Bittrich, Lucy Winkler, Max Herzog, Tianyi Zhang, Tobias Antrack, L. Conrad Winkler, Jonas Schröder, Moritz Riede, Stefan C.B. Mannsfeld, Johannes Benduhn, Karl Leo
Organic semiconductors still lag behind their inorganic counterparts in terms of mobility due to their lower structural order, in particular in thin films. Here, the highly ordered phase of triclinic rubrene – characterized by high vertical hole mobility – grown from a vacuum‐deposited thin film is used by post‐annealing and implemented into organic photodetectors. Since the triclinic rubrene exhibits a high roughness with a peak‐to‐valley value of 250 nm, which is detrimental to the dark current, strategies to control the crystal growth are developed. These investigations show that a suppression layer of 20 nm C60 is the most promising approach to successfully reduce the surface roughness while maintaining the triclinic phase, proven by grazing‐incidence wide‐angle X‐ray scattering (GIWAXS). With the smoothened active layer, the dark current density is reduced by three orders of magnitude compared to the neat rubrene layer. It is as low as 2.5 × 10−10 A cm−2 at −0.1 V bias, reflected in an overall specific detectivity of 6 × 1011 Jones at zero bias (based on noise measurements) and a high linear dynamic range of 170 dB. This strategy using a suppression layer thus proves successful and is very promising to be applied to other crystalline materials.
由于结构有序性较低，有机半导体在迁移率方面仍然落后于无机半导体，尤其是在薄膜中。在这里，利用真空沉积薄膜生长出的高度有序的三菱红柱石相（具有高垂直空穴迁移率的特点）进行后退火，并将其应用到有机光电探测器中。由于三linic rubrene 具有峰谷值为 250 nm 的高粗糙度，不利于暗电流，因此开发了控制晶体生长的策略。通过掠入射广角 X 射线散射 (GIWAXS)，这些研究表明 20 nm C60 抑制层是在保持三菱相的同时成功降低表面粗糙度的最有前途的方法。与纯红宝石层相比，平滑活性层的暗电流密度降低了三个数量级。在 -0.1 V 偏压下，暗电流密度低至 2.5 × 10-10 A cm-2，这反映在零偏压下 6 × 1011 Jones 的总体特定检测率（基于噪声测量）和 170 dB 的高线性动态范围上。因此，这种使用抑制层的策略被证明是成功的，并有望应用于其他晶体材料。
{"title":"Strategies to Control Crystal Growth of Highly Ordered Rubrene Thin Films for Application in Organic Photodetectors","authors":"Anna‐Lena Hofmann, Jakob Wolansky, Mike Hambsch, Felix Talnack, Eva Bittrich, Lucy Winkler, Max Herzog, Tianyi Zhang, Tobias Antrack, L. Conrad Winkler, Jonas Schröder, Moritz Riede, Stefan C.B. Mannsfeld, Johannes Benduhn, Karl Leo","doi":"10.1002/adom.202401025","DOIUrl":"https://doi.org/10.1002/adom.202401025","url":null,"abstract":"Organic semiconductors still lag behind their inorganic counterparts in terms of mobility due to their lower structural order, in particular in thin films. Here, the highly ordered phase of triclinic rubrene – characterized by high vertical hole mobility – grown from a vacuum‐deposited thin film is used by post‐annealing and implemented into organic photodetectors. Since the triclinic rubrene exhibits a high roughness with a peak‐to‐valley value of 250 nm, which is detrimental to the dark current, strategies to control the crystal growth are developed. These investigations show that a suppression layer of 20 nm C<jats:sub>60</jats:sub> is the most promising approach to successfully reduce the surface roughness while maintaining the triclinic phase, proven by grazing‐incidence wide‐angle X‐ray scattering (GIWAXS). With the smoothened active layer, the dark current density is reduced by three orders of magnitude compared to the neat rubrene layer. It is as low as 2.5 × 10<jats:sup>−10 </jats:sup>A cm<jats:sup>−2</jats:sup> at −0.1 V bias, reflected in an overall specific detectivity of 6 × 10<jats:sup>11</jats:sup> Jones at zero bias (based on noise measurements) and a high linear dynamic range of 170 dB. This strategy using a suppression layer thus proves successful and is very promising to be applied to other crystalline materials.","PeriodicalId":116,"journal":{"name":"Advanced Optical Materials","volume":null,"pages":null},"PeriodicalIF":9.0,"publicationDate":"2024-06-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141511787","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Stepan Ilin, Daria Khmelevskaia, Anna Nikolaeva, George M. Maragkakis, Sotiris Psilodimitrakopoulos, Leonidas Mouchliadis, Pavel M. Talianov, Soslan A. Khubezhov, Emmanuel Stratakis, Lev E. Zelenkov, Sergey V. Makarov
Lead‐free halide perovskites is a novel class of environment‐friendly nonlinear optical materials, that already demonstrate high potential for second harmonics generation (SHG). Here a synthesis protocol is optimized to create single‐crystal CsGeI3 nanoparticles (NPs) supporting optical Mie resonances that efficiently convert infrared light to visible both via lasing and SHG mechanisms. Such high‐quality resonant NPs allow us to achieve up‐conversion lasing in the broadband excitation wavelength (1200–1520 nm), which is accompanied by efficient spectrally tunable SHG with intensity comparable with that for lasing depending on temperature. Experimental and theoretical study of linear and nonlinear optical properties of CsGeI3 material in the form of high‐quality thin film and NPs of different sizes reveal that coupling incident light with a magnetic dipole resonance leads to a strong enhancement of SHG by one order of magnitude. As a result, the study provides a novel strategy where individual NPs can support both up‐conversion lasing and SHG in a broad range of excitation wavelengths.
{"title":"Lead‐Free Halide Perovskite Nanoparticles for Up‐Conversion Lasing and Efficient Second Harmonic Generation","authors":"Stepan Ilin, Daria Khmelevskaia, Anna Nikolaeva, George M. Maragkakis, Sotiris Psilodimitrakopoulos, Leonidas Mouchliadis, Pavel M. Talianov, Soslan A. Khubezhov, Emmanuel Stratakis, Lev E. Zelenkov, Sergey V. Makarov","doi":"10.1002/adom.202400170","DOIUrl":"https://doi.org/10.1002/adom.202400170","url":null,"abstract":"Lead‐free halide perovskites is a novel class of environment‐friendly nonlinear optical materials, that already demonstrate high potential for second harmonics generation (SHG). Here a synthesis protocol is optimized to create single‐crystal CsGeI<jats:sub>3</jats:sub> nanoparticles (NPs) supporting optical Mie resonances that efficiently convert infrared light to visible both via lasing and SHG mechanisms. Such high‐quality resonant NPs allow us to achieve up‐conversion lasing in the broadband excitation wavelength (1200–1520 nm), which is accompanied by efficient spectrally tunable SHG with intensity comparable with that for lasing depending on temperature. Experimental and theoretical study of linear and nonlinear optical properties of CsGeI<jats:sub>3</jats:sub> material in the form of high‐quality thin film and NPs of different sizes reveal that coupling incident light with a magnetic dipole resonance leads to a strong enhancement of SHG by one order of magnitude. As a result, the study provides a novel strategy where individual NPs can support both up‐conversion lasing and SHG in a broad range of excitation wavelengths.","PeriodicalId":116,"journal":{"name":"Advanced Optical Materials","volume":null,"pages":null},"PeriodicalIF":9.0,"publicationDate":"2024-06-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141511788","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Junwen Lai, Jie Zhan, Peitao Liu, Tomonori Shirakawa, Yunoki Seiji, Xing‐Qiu Chen, Yan Sun
Bulk photovoltaic effect, i.e. shift current, is a nonlinear second‐order optical response that can rectify an alternating current (AC) electric field into a direct current (DC). Depending on the wavelength of the incident light, shift current finds applications in various fields, including solar energy conversion and radiation detection. Its promising application in energy conversion and information processing has inspired investigations to uncover the relationship between shift current and electronic structures of materials. Despite numerous efforts dedicated to designing principles for strong bulk photovoltaic effect materials, the only widely accepted crucial parameter is the joint density of states (JDOS). In this study, employing effective model analysis and first‐principles calculations, an enhancement effect of bulk photovoltaic effect is found to arise from band hybridization that is typically along with anti‐crossing‐like electronic band structures, similar to the Berry curvature effects in intrinsic anomalous Hall conductivity. While this mechanism does not offer a comprehensive understanding of the relationship between electronic structure and the magnitude of bulk photovoltaic effect, it represents practical progress in the design of materials with strong bulk photovoltaic effect.
{"title":"Universal Enhancement Effect of Nonlinear Optical Response from Band Hybridization","authors":"Junwen Lai, Jie Zhan, Peitao Liu, Tomonori Shirakawa, Yunoki Seiji, Xing‐Qiu Chen, Yan Sun","doi":"10.1002/adom.202401143","DOIUrl":"https://doi.org/10.1002/adom.202401143","url":null,"abstract":"Bulk photovoltaic effect, i.e. shift current, is a nonlinear second‐order optical response that can rectify an alternating current (AC) electric field into a direct current (DC). Depending on the wavelength of the incident light, shift current finds applications in various fields, including solar energy conversion and radiation detection. Its promising application in energy conversion and information processing has inspired investigations to uncover the relationship between shift current and electronic structures of materials. Despite numerous efforts dedicated to designing principles for strong bulk photovoltaic effect materials, the only widely accepted crucial parameter is the joint density of states (JDOS). In this study, employing effective model analysis and first‐principles calculations, an enhancement effect of bulk photovoltaic effect is found to arise from band hybridization that is typically along with anti‐crossing‐like electronic band structures, similar to the Berry curvature effects in intrinsic anomalous Hall conductivity. While this mechanism does not offer a comprehensive understanding of the relationship between electronic structure and the magnitude of bulk photovoltaic effect, it represents practical progress in the design of materials with strong bulk photovoltaic effect.","PeriodicalId":116,"journal":{"name":"Advanced Optical Materials","volume":null,"pages":null},"PeriodicalIF":9.0,"publicationDate":"2024-06-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141511795","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Short‐wave infrared (SWIR) photodetectors utilizing quantum dot (QD) material systems, harnessed through the quantum confinement effect to tune the absorption wavelength, offer an attractive avenue for the development of cost‐effective and solution‐processed photodetectors compared to the relatively expensive compound semiconductor photodetectors. However, the pores between the QDs and poor chemical stability after surface modification have impeded the practical application of quantum‐dot‐based photodetectors. In this study, high‐gain SWIR photodetector is demonstrated and achieved by incorporating PbS QD into the Cs2AgBiBr6 halide‐based double perovskite matrix, as confirmed by X‐ray diffraction, transmission electron microscope, and energy dispersive spectrometer. The thin film structure and detailed local structure are revealed by 2D grazing‐incidence wide and small‐angle X‐ray scattering. The resulting PbS@Cs2AgBiBr6‐based SWIR photodetector exhibits remarkable performance with a responsivity and detectivity of 15000 A W−1 and 1.31 × 1012 cm Hz1/2 W−1, respectively. This study offers valuable insights into the design of composite materials for high‐gain SWIR photodetectors.
与相对昂贵的化合物半导体光电探测器相比，利用量子点（QD）材料系统的短波红外（SWIR）光电探测器，通过量子约束效应来调整吸收波长，为开发具有成本效益的溶液处理光电探测器提供了一条极具吸引力的途径。然而，量子点之间的孔隙和表面修饰后较差的化学稳定性阻碍了基于量子点的光电探测器的实际应用。在这项研究中，通过 X 射线衍射、透射电子显微镜和能量色散光谱仪的证实，在基于 Cs2AgBiBr6 卤化物的双包晶石基质中加入 PbS QD，展示并实现了高增益的 SWIR 光电探测器。二维掠入射广角和小角 X 射线散射揭示了薄膜结构和详细的局部结构。所制备的基于 PbS@Cs2AgBiBr6 的 SWIR 光电探测器性能卓越，响应率和探测率分别达到 15000 A W-1 和 1.31 × 1012 cm Hz1/2 W-1。这项研究为设计用于高增益 SWIR 光电探测器的复合材料提供了宝贵的启示。
{"title":"Quantum‐Dots‐In‐Double‐Perovskite for High‐Gain Short‐Wave Infrared Photodetector","authors":"An‐Ting Jhang, Po‐Cheng Tsai, Yi‐Ting Tsai, Shih‐Yen Lin, Mu‐Huai Fang","doi":"10.1002/adom.202401252","DOIUrl":"https://doi.org/10.1002/adom.202401252","url":null,"abstract":"Short‐wave infrared (SWIR) photodetectors utilizing quantum dot (QD) material systems, harnessed through the quantum confinement effect to tune the absorption wavelength, offer an attractive avenue for the development of cost‐effective and solution‐processed photodetectors compared to the relatively expensive compound semiconductor photodetectors. However, the pores between the QDs and poor chemical stability after surface modification have impeded the practical application of quantum‐dot‐based photodetectors. In this study, high‐gain SWIR photodetector is demonstrated and achieved by incorporating PbS QD into the Cs<jats:sub>2</jats:sub>AgBiBr<jats:sub>6</jats:sub> halide‐based double perovskite matrix, as confirmed by X‐ray diffraction, transmission electron microscope, and energy dispersive spectrometer. The thin film structure and detailed local structure are revealed by 2D grazing‐incidence wide and small‐angle X‐ray scattering. The resulting PbS@Cs<jats:sub>2</jats:sub>AgBiBr<jats:sub>6</jats:sub>‐based SWIR photodetector exhibits remarkable performance with a responsivity and detectivity of 15000 A W<jats:sup>−1</jats:sup> and 1.31 × 10<jats:sup>12</jats:sup> cm Hz<jats:sup>1/2</jats:sup> W<jats:sup>−1</jats:sup>, respectively. This study offers valuable insights into the design of composite materials for high‐gain SWIR photodetectors.","PeriodicalId":116,"journal":{"name":"Advanced Optical Materials","volume":null,"pages":null},"PeriodicalIF":9.0,"publicationDate":"2024-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141511794","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Sergei Nedić, Karin Yamamura, Angus Gale, Igor Aharonovich, Milos Toth
Hexagonal boron nitride (hBN) holds promise as a solid state, van der Waals host of single photon emitters for on‐chip quantum photonics. The B‐center defect emitting at 436 nm is particularly compelling as it can be generated by electron beam irradiation. However, the emitter generation mechanism is unknown, the robustness of the method is variable, and it has only been applied successfully to thick flakes of hBN (≫ 10 nm). Here, it is used in situ time‐resolved cathodoluminescence (CL) spectroscopy to investigate the kinetics of B‐center generation. It is shown that the generation of B‐centers is accompanied by quenching of a carbon‐related emission at ≈305 nm and that both processes are rate‐limited by electromigration of defects in the hBN lattice. It identifies problems that limit the efficacy and reproducibility of the emitter generation method and solve them using a combination of optimized electron beam parameters and hBN pre‐and postprocessing treatments. It is achieved B‐center quantum emitters in hBN flakes as thin as 8 nm, elucidate the mechanisms responsible for electron beam restructuring of quantum emitters in hBN, and gain insights toward the identification of the atomic structure of the B‐center quantum emitter.
六方氮化硼（hBN）有望成为用于片上量子光子学的固态范德华单光子发射器。在 436 纳米波长下发射的 B 中心缺陷尤其引人注目，因为它可以通过电子束照射产生。然而，发射器的产生机制尚不清楚，该方法的稳定性也不稳定，而且只成功应用于厚片 hBN（≫ 10 nm）。在此，我们使用原位时间分辨阴极发光 (CL) 光谱法来研究 B 中心的生成动力学。结果表明，B-中心的生成伴随着≈305 nm处碳相关发射的淬灭，而这两个过程的速率都受限于 hBN 晶格中缺陷的电迁移。该研究发现了限制发射体生成方法的有效性和可重复性的问题，并通过优化电子束参数和氢化硼预处理和后处理相结合的方法解决了这些问题。它在薄至 8 纳米的氢化硼薄片中实现了 B 中心量子发射器，阐明了电子束在氢化硼中重组量子发射器的机制，并获得了确定 B 中心量子发射器原子结构的见解。
{"title":"Electron Beam Restructuring of Quantum Emitters in Hexagonal Boron Nitride","authors":"Sergei Nedić, Karin Yamamura, Angus Gale, Igor Aharonovich, Milos Toth","doi":"10.1002/adom.202400908","DOIUrl":"https://doi.org/10.1002/adom.202400908","url":null,"abstract":"Hexagonal boron nitride (hBN) holds promise as a solid state, van der Waals host of single photon emitters for on‐chip quantum photonics. The B‐center defect emitting at 436 nm is particularly compelling as it can be generated by electron beam irradiation. However, the emitter generation mechanism is unknown, the robustness of the method is variable, and it has only been applied successfully to thick flakes of hBN (≫ 10 nm). Here, it is used in situ time‐resolved cathodoluminescence (CL) spectroscopy to investigate the kinetics of B‐center generation. It is shown that the generation of B‐centers is accompanied by quenching of a carbon‐related emission at ≈305 nm and that both processes are rate‐limited by electromigration of defects in the hBN lattice. It identifies problems that limit the efficacy and reproducibility of the emitter generation method and solve them using a combination of optimized electron beam parameters and hBN pre‐and postprocessing treatments. It is achieved B‐center quantum emitters in hBN flakes as thin as 8 nm, elucidate the mechanisms responsible for electron beam restructuring of quantum emitters in hBN, and gain insights toward the identification of the atomic structure of the B‐center quantum emitter.","PeriodicalId":116,"journal":{"name":"Advanced Optical Materials","volume":null,"pages":null},"PeriodicalIF":9.0,"publicationDate":"2024-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141530291","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：