Zahid Nazir, Na Liu, Muhammad Abubaker Khan, Syed Muhammad Kazim Abbas Naqvi, Hui Long, Ziqi Liao, Elena Ushakova, Roman Vasiliev, Chang Shuai
Chirality-induced spin selectivity (CISS) enables spin-polarized charge transport through chiral media without magnetic fields. While extensively studied in organic and biomolecular systems, CISS in semiconductors remains limited, lacking standardized methodologies and mechanistic understanding. II-VI and III-V semiconductor nanocrystals (NCs), with tunable band gaps, high optical quality, strong spin-orbit coupling (SOC) and diverse morphologies, provide an ideal platform for exploring spin-dependent phenomena. This review highlights fundamental concepts of chirality and its manifestation in nanostructures, distinguishing ligand-induced and intrinsic chirality in NCs. This work critically integrates recent advances on the microscopic link between chirality and spin selectivity, emphasizing mechanisms such as exciton-ligand hybridization, and surface/bulk inversion asymmetries that generate Rashba/Dresselhaus effects, leading to interfacial spin-filtering. This work describes structural control and chiroptical properties of chiral II-VI/III-V NCs, discussing factors like morphology, surface defects, and ligand chemistry, while outlining trade-offs among SOC, optical quality, and device integration. Mechanistic models, including exciton-ligand hybridization and photonic coupling, explain trends in circular dichroism. Strategies for tuning spin injection, transport, and relaxation are outlined, emphasizing SOC, structural anisotropy, and compositional engineering. This work assesses challenges in integrating chiral NCs into practical devices – including stability, scalability, environmental safety – and highlight opportunities in spin-LEDs, quantum computation, biosensing, and memory devices.
{"title":"Chirality-Induced Spin Selectivity in II-VI and III-V Semiconductor Nanocrystals: Mechanism, Manipulation, and Application","authors":"Zahid Nazir, Na Liu, Muhammad Abubaker Khan, Syed Muhammad Kazim Abbas Naqvi, Hui Long, Ziqi Liao, Elena Ushakova, Roman Vasiliev, Chang Shuai","doi":"10.1002/adom.202502769","DOIUrl":"https://doi.org/10.1002/adom.202502769","url":null,"abstract":"<p>Chirality-induced spin selectivity (CISS) enables spin-polarized charge transport through chiral media without magnetic fields. While extensively studied in organic and biomolecular systems, CISS in semiconductors remains limited, lacking standardized methodologies and mechanistic understanding. II-VI and III-V semiconductor nanocrystals (NCs), with tunable band gaps, high optical quality, strong spin-orbit coupling (SOC) and diverse morphologies, provide an ideal platform for exploring spin-dependent phenomena. This review highlights fundamental concepts of chirality and its manifestation in nanostructures, distinguishing ligand-induced and intrinsic chirality in NCs. This work critically integrates recent advances on the microscopic link between chirality and spin selectivity, emphasizing mechanisms such as exciton-ligand hybridization, and surface/bulk inversion asymmetries that generate Rashba/Dresselhaus effects, leading to interfacial spin-filtering. This work describes structural control and chiroptical properties of chiral II-VI/III-V NCs, discussing factors like morphology, surface defects, and ligand chemistry, while outlining trade-offs among SOC, optical quality, and device integration. Mechanistic models, including exciton-ligand hybridization and photonic coupling, explain trends in circular dichroism. Strategies for tuning spin injection, transport, and relaxation are outlined, emphasizing SOC, structural anisotropy, and compositional engineering. This work assesses challenges in integrating chiral NCs into practical devices – including stability, scalability, environmental safety – and highlight opportunities in spin-LEDs, quantum computation, biosensing, and memory devices.</p>","PeriodicalId":116,"journal":{"name":"Advanced Optical Materials","volume":"14 3","pages":""},"PeriodicalIF":7.2,"publicationDate":"2025-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146007788","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Marco Faverzani, Davide Impelluso, Stefano Calcaterra, Carlo Zucchetti, Daniel Chrastina, Camillo Tassi, Giovanni Capellini, Paolo Biagioni, Giovanni Isella, Michele Virgilio, Jacopo Frigerio
The design, fabrication, and comprehensive characterization of hole-doped Ge-rich SiGe parabolic quantum wells engineered to exhibit intersubband transitions in the mid-infrared spectral range around 120 meV are reported. The heterostructures are grown on Si substrates by low-energy plasma-enhanced chemical vapor deposition, enabling finely controlled compositional profiles and high crystalline quality. Thorough structural analysis confirms the formation of parabolic potential wells despite the presence of entropic interdiffusion. Photoreflectance spectroscopy is employed to investigate interband optical transitions in these heterostructures, whereas intersubband transitions are studied by Fourier-transform infrared spectroscopy that revealed characteristic constant-energy TM-polarized absorption features up to room temperature. At higher doping levels, a more structured spectral response is observed due to valence-band non-parabolicity. Tight-binding band structure simulations, incorporating many-body effects, accurately reproduce the observed spectral features. These results highlight the potential of SiGe parabolic quantum wells as a versatile and scalable platform for the development of Si-compatible mid-infrared optoelectronic devices based on intersubband transitions.
{"title":"Mid-Infrared Intersubband Transitions in p-Type SiGe Parabolic Quantum Wells","authors":"Marco Faverzani, Davide Impelluso, Stefano Calcaterra, Carlo Zucchetti, Daniel Chrastina, Camillo Tassi, Giovanni Capellini, Paolo Biagioni, Giovanni Isella, Michele Virgilio, Jacopo Frigerio","doi":"10.1002/adom.202503060","DOIUrl":"https://doi.org/10.1002/adom.202503060","url":null,"abstract":"<p>The design, fabrication, and comprehensive characterization of hole-doped Ge-rich SiGe parabolic quantum wells engineered to exhibit intersubband transitions in the mid-infrared spectral range around 120 meV are reported. The heterostructures are grown on Si substrates by low-energy plasma-enhanced chemical vapor deposition, enabling finely controlled compositional profiles and high crystalline quality. Thorough structural analysis confirms the formation of parabolic potential wells despite the presence of entropic interdiffusion. Photoreflectance spectroscopy is employed to investigate interband optical transitions in these heterostructures, whereas intersubband transitions are studied by Fourier-transform infrared spectroscopy that revealed characteristic constant-energy TM-polarized absorption features up to room temperature. At higher doping levels, a more structured spectral response is observed due to valence-band non-parabolicity. Tight-binding band structure simulations, incorporating many-body effects, accurately reproduce the observed spectral features. These results highlight the potential of SiGe parabolic quantum wells as a versatile and scalable platform for the development of Si-compatible mid-infrared optoelectronic devices based on intersubband transitions.</p>","PeriodicalId":116,"journal":{"name":"Advanced Optical Materials","volume":"14 3","pages":""},"PeriodicalIF":7.2,"publicationDate":"2025-12-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/adom.202503060","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146007877","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Andrea Rossini, Fabio Marangi, Chiara Florindi, Andrea Pianetti, Giulia Simoncini, Michele Magnozzi, Francesco Bisio, Francesco Scotognella, Guglielmo Lanzani, Giuseppe Maria Paternò
Plasmonic resonances offer a powerful way for confining light and amplify interactions at materials interfaces. Among them, Tamm plasmons that arise at the interface between a metal film and a photonic crystal are particularly attractive because they can be excited at normal incidence and support strong field localization. In the specific case of porous or corrugated metal layers, the resonance field can extend to the metal/air interface, where it becomes accessible to overlying materials. Here, a Tamm plasmon device (TD) is introduced fabricated by depositing a corrugated silver layer on a SiO2/TiO2 mesoporous distributed Bragg reflector, and tuned to support a Tamm plasmon resonance at 575 nm to enhance light–matter interaction at the bioelectronic interface to maximize cell photostimulation. The TD enhances polymer absorption, influences emission and photothermal response. When interfaced with living cells, this translates into efficient light-driven depolarization at reduced excitation intensity. By concentrating evanescent fields at the polymer interface and acting as an asymmetrical open resonant cavity, the TD architecture markedly lowers the optical energy threshold for cell photostimulation. This versatile platform offers new opportunities for low-power photothermal therapies, neuromodulation, and advanced optoelectronic applications.
{"title":"Plasmonic Tamm Resonance in a Conjugated-Polymer Biointerface for Efficient Cell Photostimulation","authors":"Andrea Rossini, Fabio Marangi, Chiara Florindi, Andrea Pianetti, Giulia Simoncini, Michele Magnozzi, Francesco Bisio, Francesco Scotognella, Guglielmo Lanzani, Giuseppe Maria Paternò","doi":"10.1002/adom.202503019","DOIUrl":"https://doi.org/10.1002/adom.202503019","url":null,"abstract":"<p>Plasmonic resonances offer a powerful way for confining light and amplify interactions at materials interfaces. Among them, Tamm plasmons that arise at the interface between a metal film and a photonic crystal are particularly attractive because they can be excited at normal incidence and support strong field localization. In the specific case of porous or corrugated metal layers, the resonance field can extend to the metal/air interface, where it becomes accessible to overlying materials. Here, a Tamm plasmon device (TD) is introduced fabricated by depositing a corrugated silver layer on a SiO<sub>2</sub>/TiO<sub>2</sub> mesoporous distributed Bragg reflector, and tuned to support a Tamm plasmon resonance at 575 nm to enhance light–matter interaction at the bioelectronic interface to maximize cell photostimulation. The TD enhances polymer absorption, influences emission and photothermal response. When interfaced with living cells, this translates into efficient light-driven depolarization at reduced excitation intensity. By concentrating evanescent fields at the polymer interface and acting as an asymmetrical open resonant cavity, the TD architecture markedly lowers the optical energy threshold for cell photostimulation. This versatile platform offers new opportunities for low-power photothermal therapies, neuromodulation, and advanced optoelectronic applications.</p>","PeriodicalId":116,"journal":{"name":"Advanced Optical Materials","volume":"14 3","pages":""},"PeriodicalIF":7.2,"publicationDate":"2025-12-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146016373","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Manuel Romero, Victor Castaing, Daniel Rytz, Gabriel Lozano, Hernán Míguez
Persistent Luminescent Materials
Frequency-domain analysis is used to study afterglow, enabling the direct measurement of charge trapping rates in persistent luminescent materials. This method offers new insights into trapping efficiency and performance, surpassing traditional time-domain techniques and promoting rational material optimization. More details can be found in the Research Article by Manuel Romero, Gabriel Lozano, and co-workers (DOI: 10.1002/adom.202501847).