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Polarization-Sensitive Self-Powered Photodetector Based on Anisotropic/Isotropic ReS2/SnSe2 Van der Waals Heterojunction (Advanced Optical Materials 31/2024) 基于各向异性/各向异性 ReS2/SnSe2 范德华异质结的偏振敏感型自供电光电探测器(先进光学材料 31/2024)
IF 8 2区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2024-11-04 DOI: 10.1002/adom.202470101
Ziyi Fu, Jiayue Han, Laijiang Wei, Yuchao Wei, Xianghu Huo, Chunyu Li, Jinling Xie, Hongxi Zhou, He Yu, Jun Gou, Zhiming Wu, Jun Wang

Polarization-Sensitive Heterojunction Photodetector

In article number 2401306, Ziyi Fu, Jiayue Han, Jun Wang, and co-workers introduce a polarization-sensitive photodetector based on the ReS2/SnSe2 heterojunction, detailing the material synthesis and device fabrication. This self-powered detector demonstrates excellent optoelectronic and polarization detection performance. Additionally, its application in optical communication systems is validated. This research provides a novel and practical approach for developing energy-efficient, high-performance polarization-sensitive detectors.

偏振敏感异质结光电探测器在文章编号 2401306 中,傅自义、韩家悦、王军及其合作者介绍了一种基于 ReS2/SnSe2 异质结的偏振敏感光电探测器,详细介绍了材料合成和器件制造。这种自供电探测器具有出色的光电和偏振检测性能。此外,它在光通信系统中的应用也得到了验证。这项研究为开发高能效、高性能偏振敏感探测器提供了一种新颖实用的方法。
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引用次数: 0
UV­B Persistent Luminescence of CaF2:Gd3+ for Radiation Labeling and Tracing (Advanced Optical Materials 31/2024) 用于辐射标记和追踪的 CaF2:Gd3+ 的 UVB 持久发光(先进光学材料 31/2024)
IF 8 2区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2024-11-04 DOI: 10.1002/adom.202470103
Wenting Zhao, Leipeng Li, Tao Li, Jianrong Qiu, Yanmin Yang

Ultraviolet-B Persistent Luminescence of CaF2:Gd3+

After exposure to X-ray, CaF2:Gd3+ continued to emit ultraviolet-B luminescence peaking at 313 nm, corresponding to the 6P7/28S7/2 transition of Gd3+. By X-ray photoelectron spectroscopy measurements, the valence variation model was excluded to explain the persistent luminescence of CaF2:Gd3+. Potential applications including static labeling and dynamic tracking were demonstrated depending on such ultraviolet-B persistent luminescence. For further details, see article number 2401320 by Leipeng Li, Jianrong Qiu, Yanmin Yang, and co-workers from Hebei University and Zhejiang University.

CaF2:Gd3+的紫外-B持续发光在暴露于 X 射线后,CaF2:Gd3+ 继续发出紫外-B 发光,峰值在 313 nm 处,对应于 Gd3+ 的 6P7/2 → 8S7/2 转变。通过 X 射线光电子能谱测量,排除了价变模型对 CaF2:Gd3+ 持续发光的解释。利用这种紫外线-B 持久发光,展示了包括静态标记和动态跟踪在内的潜在应用。更多详情,请参阅河北大学和浙江大学的李雷鹏、邱建荣、杨艳敏及合作者的 2401320 号文章。
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引用次数: 0
Highly Efficient and Integrated Nonlinear Airy Beams Generation 高效集成非线性空气光束生成技术
IF 8 2区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2024-11-04 DOI: 10.1002/adom.202401810
Qian Yang, Xiaona Ye, Haigang Liu, Xianfeng Chen

Owing to its peculiar non-diffraction, self-acceleration, and self-healing properties, the Airy beam has attracted a great deal of attention in various fields such as micro-manipulation, plasma generation, and optical microscopy. To date, it is still a challenge to generate nonlinear Airy beams with microstructure efficiently, thus limiting applications of such Airy beams. Here, a novel and efficient method for generating Airy beams is experimentally demonstrated by microstructure on a nonlinear crystal surface, which is fabricated by a focused ion beam (FIB) technique. The second-harmonic (SH) Airy beams are generated in the far field and characterize their intensity distributions, which agree well with theoretical results. Then, the self-accelerating and self-healing properties of the generated SH Airy beams are demonstrated. Besides, the normalized efficiency of SH Airy beams is measured at (1.44 × 10−5%W−1), and compare the efficiency of different methods of generating nonlinear Airy beams, which shows the advantages of this method. The proposed method of generating nonlinear Airy beams shows great potential for integrated optics, optical micro-machining, and advanced imaging.

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引用次数: 0
Directionally Asymmetric in Orbital Angular Momentum Generation Using Single-Layer Dielectric Janus Metasurfaces (Advanced Optical Materials 31/2024) 利用单层电介质 Janus 元表面生成方向不对称的轨道角动量(先进光学材料 31/2024)
IF 8 2区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2024-11-04 DOI: 10.1002/adom.202470102
Chang-Yi Lin, Jhih-Hao Huang, Huan-Teng Su, Shu-Ming Chang, Yun-Chien Wu, Yao-Wei Huang

Janus Metasurfaces with Arbitrary Polarization Control

The first Janus metasurfaces demonstrate directionally asymmetric orbital angular momentum generation from arbitrary spin. Titania-based meta-atoms enable operation in the visible range, extending beyond prior demonstrations in microwave and mid-infrared regions. Meta-atoms provide local/global rotation and width control, achieving global directional multifunctionality tailored by the Jones matrix. This multifunctionality in a single-layer design surpasses previous approaches based on spatial multiplexing or vertical stacking, expanding its applicability across diverse domains. For further details, see article number 2401335 by Yao-Wei Huang and co-workers.

具有任意偏振控制功能的杰纳斯元表面首个杰纳斯元表面展示了任意自旋产生的方向不对称轨道角动量。基于钛的元原子可在可见光范围内运行,超越了之前在微波和中红外区域的演示。元原子提供局部/全局旋转和宽度控制,实现了由琼斯矩阵定制的全局定向多功能性。这种单层设计的多功能性超越了以往基于空间多路复用或垂直堆叠的方法,扩大了其在不同领域的适用性。更多详情,请参阅黄耀伟及其合作者的 2401335 号文章。
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引用次数: 0
Masthead: (Advanced Optical Materials 31/2024) 刊头:(先进光学材料 31/2024)
IF 8 2区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2024-11-04 DOI: 10.1002/adom.202470100
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引用次数: 0
Selective Up- and Down-Conversion Luminescence for Nonlinear Expansion of Unclonable Parameter Space
IF 8 2区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2024-11-02 DOI: 10.1002/adom.202401779
Dong Wook Kim, Jaehyuck Jang, Jung Woo Leem, Heechang Yun, Byoungsu Ko, Ik-Soo Kim, Hyeji Park, Young L. Kim, Junsuk Rho, Unyong Jeong

Optical physical unclonable functions (PUFs) have attracted considerable attention as an immediately exploitable cryptographic primitive for high-level hardware security attributed to their potential for implementing a large parameter space through the incorporation of robust optical phenomena. However, previous optical PUFs primarily relied on linear and single-channel optical processes, requiring an increase in the number of optical inputs (materials or wavelengths) in a monotonous manner to scale up challenge-response pairs. Herein, an optical PUF capable of nonlinearly expanding the parameter space to enhance the cryptographic strength through the selective adjustment of up- and down-conversion luminescence is introduced. The nonlinearity in the expansion of the parameter space originates from a random distribution of three types of microspheres, with their shells designed to exhibit various positional arrangements of upconversion nanoparticles and perovskite crystals. Because energy and photon interactions depend on their positional proximity and excitation power, adjusting the two excitation inputs into five power steps enables the single PUF to generate 30 unique cryptographic keys, which is 15 times greater than what a linear system can offer. The PUF also demonstrates high stability, maintaining its cryptographic performance when exposed to heat, moisture, and long-term laser excitation, underscoring its practical applicability in security protocols.

{"title":"Selective Up- and Down-Conversion Luminescence for Nonlinear Expansion of Unclonable Parameter Space","authors":"Dong Wook Kim,&nbsp;Jaehyuck Jang,&nbsp;Jung Woo Leem,&nbsp;Heechang Yun,&nbsp;Byoungsu Ko,&nbsp;Ik-Soo Kim,&nbsp;Hyeji Park,&nbsp;Young L. Kim,&nbsp;Junsuk Rho,&nbsp;Unyong Jeong","doi":"10.1002/adom.202401779","DOIUrl":"https://doi.org/10.1002/adom.202401779","url":null,"abstract":"<p>Optical physical unclonable functions (PUFs) have attracted considerable attention as an immediately exploitable cryptographic primitive for high-level hardware security attributed to their potential for implementing a large parameter space through the incorporation of robust optical phenomena. However, previous optical PUFs primarily relied on linear and single-channel optical processes, requiring an increase in the number of optical inputs (materials or wavelengths) in a monotonous manner to scale up challenge-response pairs. Herein, an optical PUF capable of nonlinearly expanding the parameter space to enhance the cryptographic strength through the selective adjustment of up- and down-conversion luminescence is introduced. The nonlinearity in the expansion of the parameter space originates from a random distribution of three types of microspheres, with their shells designed to exhibit various positional arrangements of upconversion nanoparticles and perovskite crystals. Because energy and photon interactions depend on their positional proximity and excitation power, adjusting the two excitation inputs into five power steps enables the single PUF to generate 30 unique cryptographic keys, which is 15 times greater than what a linear system can offer. The PUF also demonstrates high stability, maintaining its cryptographic performance when exposed to heat, moisture, and long-term laser excitation, underscoring its practical applicability in security protocols.</p>","PeriodicalId":116,"journal":{"name":"Advanced Optical Materials","volume":"12 36","pages":""},"PeriodicalIF":8.0,"publicationDate":"2024-11-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142868070","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Polarization-Dependent Nonlinear Optical Responses of CrPS4 for Ultrafast All-Optical Switches
IF 8 2区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2024-11-02 DOI: 10.1002/adom.202401723
Lei Yan, Ziyao Gong, Qinyong He, Dechao Shen, Anping Ge, Yang Liu, Guohong Ma, Ye Dai, Liaoxin Sun, Saifeng Zhang

Due to the extraordinary chemical and physical properties, ternary chalcogenides with wide-range bandgap, unique structures, and exceptional photoelectric properties have attracted great interest recently. Among them, Chromium thiophosphate (CrPS4) is a promising semiconductor with excellent optical, mechanical, and electronic properties and has a lower lattice symmetry resulting in significant in-plane anisotropy. Here, the polarization-dependent nonlinear optical (NLO) responses of CrPS4 flake are investigated. Based on polarization-resolved Raman spectroscopy, which identifies the crystal axis of sample, the anisotropic linear absorption spectra, I-scan technique, and pump-probe measurements are utilized to investigate the optical absorption information of CrPS4. The polarization-dependent NLO responses are found originating from the anisotropic optical transition probability. And the polar optical phonons play an important role in carrier relaxation processes. Furthermore, CrPS4-based all-optical switches are proposed, which can modulate the transmittance of signal light (CW laser) by changing the polarization of switch light (fs laser). This work provides insights into polarization-dependent CrPS4-based devices, which is important to promote the potential applications in optical modulator, versatile optoelectronic detection, and so on.

{"title":"Polarization-Dependent Nonlinear Optical Responses of CrPS4 for Ultrafast All-Optical Switches","authors":"Lei Yan,&nbsp;Ziyao Gong,&nbsp;Qinyong He,&nbsp;Dechao Shen,&nbsp;Anping Ge,&nbsp;Yang Liu,&nbsp;Guohong Ma,&nbsp;Ye Dai,&nbsp;Liaoxin Sun,&nbsp;Saifeng Zhang","doi":"10.1002/adom.202401723","DOIUrl":"https://doi.org/10.1002/adom.202401723","url":null,"abstract":"<p>Due to the extraordinary chemical and physical properties, ternary chalcogenides with wide-range bandgap, unique structures, and exceptional photoelectric properties have attracted great interest recently. Among them, Chromium thiophosphate (CrPS<sub>4</sub>) is a promising semiconductor with excellent optical, mechanical, and electronic properties and has a lower lattice symmetry resulting in significant in-plane anisotropy. Here, the polarization-dependent nonlinear optical (NLO) responses of CrPS<sub>4</sub> flake are investigated. Based on polarization-resolved Raman spectroscopy, which identifies the crystal axis of sample, the anisotropic linear absorption spectra, I-scan technique, and pump-probe measurements are utilized to investigate the optical absorption information of CrPS<sub>4</sub>. The polarization-dependent NLO responses are found originating from the anisotropic optical transition probability. And the polar optical phonons play an important role in carrier relaxation processes. Furthermore, CrPS<sub>4</sub>-based all-optical switches are proposed, which can modulate the transmittance of signal light (CW laser) by changing the polarization of switch light (fs laser). This work provides insights into polarization-dependent CrPS<sub>4</sub>-based devices, which is important to promote the potential applications in optical modulator, versatile optoelectronic detection, and so on.</p>","PeriodicalId":116,"journal":{"name":"Advanced Optical Materials","volume":"12 36","pages":""},"PeriodicalIF":8.0,"publicationDate":"2024-11-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142868066","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 2DEG-Based GaN-on-Si Terahertz Modulator with Multi-Mode Switchable Control
IF 8 2区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2024-11-02 DOI: 10.1002/adom.202401873
Shanri Chen, Siyu Duan, Yongtu Zou, Shaolin Zhou, Jingbo Wu, Biaobing Jin, Haoshen Zhu, Wenquan Che, Quan Xue

As terahertz (THz) technology has been widely considered as a key candidate for future sixth-generation wireless communication networks, THz modulators show profound significance in wireless communication, data storage, and imaging. In special, dynamic tuning of THz waves through 2D electron gas (2DEG) incorporated with a hybrid design of metasurface has attracted keen interest due to the combined merits of deliberate structural design, rapid switching speed and the process compatibility. Current meta-modulator enables very high modulation depth but encounter limited bandwidth. In this paper, by taking into account the co-functional effects of temperature and voltage-dependent dynamic control on transmission amplitude, a 2DEG-based GaN-on-Si modulator with two switchable operational states (or four modes) of active wave control is proposed. Under cryogenic temperature conditions, the proposed device exhibits prominent 2D plasmons characteristics with switchable transitions between the gated mode and ungated mode for active control. Under room temperature conditions, the proposed device exhibits non-resonance broadband spectra characteristics with tunable transitions between the linearity mode and depletion mode for transmission control. The scheme provides an option for the development of the actively tunable THz meta-modulator and paves a way for the robust multifunctionality of electrically controllable THz switching, and biosensors.

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引用次数: 0
Synergistic Impact of Passivation and Efficient Hole Extraction on Phase Segregation in Mixed Halide Perovskites
IF 8 2区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2024-11-02 DOI: 10.1002/adom.202401753
Zhaojie Zhang, Rebecca J. Gilchrist, Miu Tsuji, Ronald L. Grimm, Tomoyasu Mani, D. Venkataraman

The interface between the hole transport layer (HTL) and perovskite in p-i-n perovskite solar cells (PSCs) plays a vital role in the device performance and stability. However, the impact of this interface on the vertical phase segregation of mixed halide perovskite remains insufficiently understood. This work systematically investigates the impact of chemical and electronic properties of HTL on vertical halide segregation of mixed-halide perovskites. This work shows that incorporating a poly[bis(4-phenyl) (2,4,6-trimethylphenyl) amine] (PTAA)/CuIxBr1-x bilayer as the HTL significantly suppresses light-induced vertical phase segregation in MAPb(I0.7Br0.3)3. This work uses grazing-incidence X-ray diffraction (GIXRD) to capture the depth-resolved composition change of MAPb(I0.7Br0.3)3 at the interface and within the bulk under illumination. By changing the illumination direction and the electronic properties of HTL, this work elucidates the roles of charge carrier extraction and interfacial defects on vertical phase segregation. The PTAA/CuIxBr1-x bilayer, with its synergistic passivation and efficient hole extraction ability, stabilizes the interface and bulk of the mixed halide perovskite layer and prevents phase segregation. This work underscores that synergetic passivation and efficient hole extraction pack a more powerful punch for arresting the vertical phase segregation in mixed-halide perovskite.

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引用次数: 0
2D Multifunctional Phototransistor Based on MoTe2/Graphene/SnS0.25Se0.75 Heterostructure with High Photogain and Reconfigurable Polarized Detection
IF 8 2区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2024-11-02 DOI: 10.1002/adom.202401739
Jiahao Gao, Lin Tao, Jianru Chen, Jianming Huang, Yao Zhou, Mengmeng Yang, Yiming Sun, Nengjie Huo, Zhaoqiang Zheng, Dongxiang Luo, Wei Gao

2D van der Waals (vdWs) heterojunctions exhibit facile fabrication process and tunable optoelectronic properties. However, suppressing interfacial charge traps and multifunctional photoresponse remain significant challenges. Here, the study designs a 2D multifunctional phototransistor based on ambipolar MoTe2/graphene (Gr)/p-type SnS0.25Se0.75 double vdWs vertical heterostructure via alloy engineering. The middle Gr interlayer is pivotal in reducing interfacial charge traps, facilitating vertical photocarrier transportation, and enhancing light absorption coefficient. Under photogating effect, the trapped electrons in SnS0.25Se0.75 promote the photogating effect, resulting in the maximum photogain of 8084 and specific detectivity (D*) of 8.2 × 1012 Jones. Under photoconductive effect, a high responsivity (R) of 36.9 A W−1 and D* of 7.17 × 1011 Jones are achieved. Under photovoltaic effect, the devices exhibit a remarkable R of 501 mA W−1, D* of 1.4 × 1011 Jones. Notably, a self-driven photocurrent polarized ratio of 8 under 635 nm is achieved because of the anisotropic nature of SnS0.25Se0.75 and the effective double built-in electric fields. By varying the gate voltage, the polarization ratio can be modulated from 1 to 2.5, enabling reconfigurable polarized-sensitive detection. Above all, the designed heterojunction with multifunctional and reconfigurable polarization detection.

{"title":"2D Multifunctional Phototransistor Based on MoTe2/Graphene/SnS0.25Se0.75 Heterostructure with High Photogain and Reconfigurable Polarized Detection","authors":"Jiahao Gao,&nbsp;Lin Tao,&nbsp;Jianru Chen,&nbsp;Jianming Huang,&nbsp;Yao Zhou,&nbsp;Mengmeng Yang,&nbsp;Yiming Sun,&nbsp;Nengjie Huo,&nbsp;Zhaoqiang Zheng,&nbsp;Dongxiang Luo,&nbsp;Wei Gao","doi":"10.1002/adom.202401739","DOIUrl":"https://doi.org/10.1002/adom.202401739","url":null,"abstract":"<p>2D van der Waals (vdWs) heterojunctions exhibit facile fabrication process and tunable optoelectronic properties. However, suppressing interfacial charge traps and multifunctional photoresponse remain significant challenges. Here, the study designs a 2D multifunctional phototransistor based on ambipolar MoTe<sub>2</sub>/graphene (Gr)/p-type SnS<sub>0.25</sub>Se<sub>0.75</sub> double vdWs vertical heterostructure via alloy engineering. The middle Gr interlayer is pivotal in reducing interfacial charge traps, facilitating vertical photocarrier transportation, and enhancing light absorption coefficient. Under photogating effect, the trapped electrons in SnS<sub>0.25</sub>Se<sub>0.75</sub> promote the photogating effect, resulting in the maximum photogain of 8084 and specific detectivity (D<sup>*</sup>) of 8.2 × 10<sup>12</sup> Jones. Under photoconductive effect, a high responsivity (R) of 36.9 A W<sup>−1</sup> and D<sup>*</sup> of 7.17 × 10<sup>11</sup> Jones are achieved. Under photovoltaic effect, the devices exhibit a remarkable R of 501 mA W<sup>−1</sup>, D<sup>*</sup> of 1.4 × 10<sup>11</sup> Jones. Notably, a self-driven photocurrent polarized ratio of 8 under 635 nm is achieved because of the anisotropic nature of SnS<sub>0.25</sub>Se<sub>0.75</sub> and the effective double built-in electric fields. By varying the gate voltage, the polarization ratio can be modulated from 1 to 2.5, enabling reconfigurable polarized-sensitive detection. Above all, the designed heterojunction with multifunctional and reconfigurable polarization detection.</p>","PeriodicalId":116,"journal":{"name":"Advanced Optical Materials","volume":"12 36","pages":""},"PeriodicalIF":8.0,"publicationDate":"2024-11-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142868068","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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Advanced Optical Materials
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