Pub Date : 2019-09-05DOI: 10.7567/ssdm.2019.m-5-01
L. Pamungkas, M. Tampubolon, Hung-Jen Chiu
{"title":"High-efficiency Wireless Power Transfer System","authors":"L. Pamungkas, M. Tampubolon, Hung-Jen Chiu","doi":"10.7567/ssdm.2019.m-5-01","DOIUrl":"https://doi.org/10.7567/ssdm.2019.m-5-01","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121711859","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-05DOI: 10.7567/ssdm.2019.d-6-01
N. Higashitarumizu, H. Kawamoto, K. Nagashio
{"title":"Demonstration of Electromechanical Device Based on 2D Piezoelectric Materials for Nanogenerator Applications","authors":"N. Higashitarumizu, H. Kawamoto, K. Nagashio","doi":"10.7567/ssdm.2019.d-6-01","DOIUrl":"https://doi.org/10.7567/ssdm.2019.d-6-01","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122267415","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-05DOI: 10.7567/ssdm.2019.f-5-02
K. Bui, M. Boero, K. Shiraishi, A. Oshiyama
{"title":"Gallium Diffusion and Ammonia Decomposition on Growing GaN Surface: First Principles Molecular Dynamics Simulations","authors":"K. Bui, M. Boero, K. Shiraishi, A. Oshiyama","doi":"10.7567/ssdm.2019.f-5-02","DOIUrl":"https://doi.org/10.7567/ssdm.2019.f-5-02","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"85 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124996612","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-05DOI: 10.7567/ssdm.2019.c-6-03
V. Nguyen, S. Kato, K. Gotoh, Y. Kurokawa, N. Usami
{"title":"Solute PEDOT:PSS as an Excellent Passivation Material of Si Substrate","authors":"V. Nguyen, S. Kato, K. Gotoh, Y. Kurokawa, N. Usami","doi":"10.7567/ssdm.2019.c-6-03","DOIUrl":"https://doi.org/10.7567/ssdm.2019.c-6-03","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127418305","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-05DOI: 10.7567/ssdm.2019.g-5-04
H. Kobayashi, S. Katsui, T. Nakagawa, Y. Tamatsukuri, H. Shishido, S. Uesaka, R. Yamaoka, T. Nagata, T. Aoyama, Y. Okazaki, T. Ikeda, S. Yamazaki
{"title":"5291-ppi OLED Display using CAAC-IGZO FET with Channel Length of 60 nm","authors":"H. Kobayashi, S. Katsui, T. Nakagawa, Y. Tamatsukuri, H. Shishido, S. Uesaka, R. Yamaoka, T. Nagata, T. Aoyama, Y. Okazaki, T. Ikeda, S. Yamazaki","doi":"10.7567/ssdm.2019.g-5-04","DOIUrl":"https://doi.org/10.7567/ssdm.2019.g-5-04","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132568460","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-05DOI: 10.7567/ssdm.2019.b-6-05
T. Sugiyama, A. Kubo, T. Nakano
{"title":"Plasmonic modulator driven by phase-transition of GST superlattice","authors":"T. Sugiyama, A. Kubo, T. Nakano","doi":"10.7567/ssdm.2019.b-6-05","DOIUrl":"https://doi.org/10.7567/ssdm.2019.b-6-05","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128169600","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-05DOI: 10.7567/ssdm.2019.a-6-04
K. Oshima, M. Saito, M. Shintani, K. Kuribara, Y. Ogasahara, T. Sato
{"title":"Experimental study of bias stress degradation of organic thin film transistors","authors":"K. Oshima, M. Saito, M. Shintani, K. Kuribara, Y. Ogasahara, T. Sato","doi":"10.7567/ssdm.2019.a-6-04","DOIUrl":"https://doi.org/10.7567/ssdm.2019.a-6-04","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124003610","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-05DOI: 10.7567/ssdm.2019.k-7-04
K. Kanegae, T. Narita, K. Tomita, T. Kachi, M. Horita, T. Kimoto, J. Suda
{"title":"Quick measurement method of carbon-related defect concentration in n-type GaN by dual-color-sub-bandgap-light-excited isothermal capacitance transient spectroscopy","authors":"K. Kanegae, T. Narita, K. Tomita, T. Kachi, M. Horita, T. Kimoto, J. Suda","doi":"10.7567/ssdm.2019.k-7-04","DOIUrl":"https://doi.org/10.7567/ssdm.2019.k-7-04","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115131673","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-05DOI: 10.7567/ssdm.2019.h-7-04
A. Sokolov, Yu‐Rim Jeon, H. Han, B. Ku, G. Hassan, H. Abbas, C. Choi
{"title":"Size Modulated Nitrogen-Doped Graphene Oxide Quantum Dots for Diffusive Memristor based Synaptic Device Applications","authors":"A. Sokolov, Yu‐Rim Jeon, H. Han, B. Ku, G. Hassan, H. Abbas, C. Choi","doi":"10.7567/ssdm.2019.h-7-04","DOIUrl":"https://doi.org/10.7567/ssdm.2019.h-7-04","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115241347","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-05DOI: 10.7567/ssdm.2019.e-6-04
Y. Du, H. Gamou, Shin-ichiro Takahashi, S. Karube, M. Kohda, J. Nitta
We report on the quantitative separation of the spin orbit torques (SOTs) originated from the spin Hall effect (SHE) and the Rashba-Edelstein effect (REE), by performing the Harmonic Hall measurements for epitaxial platinum/cobalt (Pt/Co) bilayers. The damping-like (DL-) and field-like (FL-)SOT efficiencies (ξDL and ξFL ) are quantified respectively by fitting the SOT data with corresponding spin-diffusion equation. As a result, the ξDL originated from the Pt bulk region (ξDL0) decreases significantly with decreasing temperature, while the ξFL from the substrate (sub.)/Pt (ξFL1) and Pt/Co (ξFL2) interface barely change, suggesting that the origin of FL-SOT is the REE instead of the SHE; the sign of ξFL1 is opposite to ξFL2, which is consistent with the REE where the direction of the spin accumulation depends on the interfacial electric field induced by broken inversion symmetry. Moreover, the ξDL induced by sub./Pt (ξDL1) and Pt/Co (ξDL2) interfaces are found to be about 1 order of magnitude smaller than maximum ξDL0 , while their sign are consistent with respective ξFL (ξFL1 and ξFL2 ). Our work presents a thorough disentanglement of the SOTs in heavy metal/ferromagnet bilayers in which both SHE and REE are present, and provides deterministic answers to the fundamental question on their physical origin.
{"title":"Disentanglement of Spin Orbit Torques Originated from Spin Hall Effect and Rashba-Edelstein Effect Using Harmonic Hall Measurements","authors":"Y. Du, H. Gamou, Shin-ichiro Takahashi, S. Karube, M. Kohda, J. Nitta","doi":"10.7567/ssdm.2019.e-6-04","DOIUrl":"https://doi.org/10.7567/ssdm.2019.e-6-04","url":null,"abstract":"We report on the quantitative separation of the spin orbit torques (SOTs) originated from the spin Hall effect (SHE) and the Rashba-Edelstein effect (REE), by performing the Harmonic Hall measurements for epitaxial platinum/cobalt (Pt/Co) bilayers. The damping-like (DL-) and field-like (FL-)SOT efficiencies (ξDL and ξFL ) are quantified respectively by fitting the SOT data with corresponding spin-diffusion equation. As a result, the ξDL originated from the Pt bulk region (ξDL0) decreases significantly with decreasing temperature, while the ξFL from the substrate (sub.)/Pt (ξFL1) and Pt/Co (ξFL2) interface barely change, suggesting that the origin of FL-SOT is the REE instead of the SHE; the sign of ξFL1 is opposite to ξFL2, which is consistent with the REE where the direction of the spin accumulation depends on the interfacial electric field induced by broken inversion symmetry. Moreover, the ξDL induced by sub./Pt (ξDL1) and Pt/Co (ξDL2) interfaces are found to be about 1 order of magnitude smaller than maximum ξDL0 , while their sign are consistent with respective ξFL (ξFL1 and ξFL2 ). Our work presents a thorough disentanglement of the SOTs in heavy metal/ferromagnet bilayers in which both SHE and REE are present, and provides deterministic answers to the fundamental question on their physical origin.","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122859814","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}