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Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials最新文献

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High-efficiency Wireless Power Transfer System 高效无线电力传输系统
L. Pamungkas, M. Tampubolon, Hung-Jen Chiu
{"title":"High-efficiency Wireless Power Transfer System","authors":"L. Pamungkas, M. Tampubolon, Hung-Jen Chiu","doi":"10.7567/ssdm.2019.m-5-01","DOIUrl":"https://doi.org/10.7567/ssdm.2019.m-5-01","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121711859","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Demonstration of Electromechanical Device Based on 2D Piezoelectric Materials for Nanogenerator Applications 基于二维压电材料的机电器件在纳米发电机中的应用演示
N. Higashitarumizu, H. Kawamoto, K. Nagashio
{"title":"Demonstration of Electromechanical Device Based on 2D Piezoelectric Materials for Nanogenerator Applications","authors":"N. Higashitarumizu, H. Kawamoto, K. Nagashio","doi":"10.7567/ssdm.2019.d-6-01","DOIUrl":"https://doi.org/10.7567/ssdm.2019.d-6-01","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122267415","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Gallium Diffusion and Ammonia Decomposition on Growing GaN Surface: First Principles Molecular Dynamics Simulations 生长GaN表面的镓扩散和氨分解:第一性原理分子动力学模拟
K. Bui, M. Boero, K. Shiraishi, A. Oshiyama
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引用次数: 0
Solute PEDOT:PSS as an Excellent Passivation Material of Si Substrate 溶质PEDOT:PSS作为一种优良的硅衬底钝化材料
V. Nguyen, S. Kato, K. Gotoh, Y. Kurokawa, N. Usami
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引用次数: 0
5291-ppi OLED Display using CAAC-IGZO FET with Channel Length of 60 nm 采用CAAC-IGZO FET的5291 ppi OLED显示器,通道长度为60nm
H. Kobayashi, S. Katsui, T. Nakagawa, Y. Tamatsukuri, H. Shishido, S. Uesaka, R. Yamaoka, T. Nagata, T. Aoyama, Y. Okazaki, T. Ikeda, S. Yamazaki
{"title":"5291-ppi OLED Display using CAAC-IGZO FET with Channel Length of 60 nm","authors":"H. Kobayashi, S. Katsui, T. Nakagawa, Y. Tamatsukuri, H. Shishido, S. Uesaka, R. Yamaoka, T. Nagata, T. Aoyama, Y. Okazaki, T. Ikeda, S. Yamazaki","doi":"10.7567/ssdm.2019.g-5-04","DOIUrl":"https://doi.org/10.7567/ssdm.2019.g-5-04","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132568460","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Plasmonic modulator driven by phase-transition of GST superlattice GST超晶格相变驱动的等离子调制器
T. Sugiyama, A. Kubo, T. Nakano
{"title":"Plasmonic modulator driven by phase-transition of GST superlattice","authors":"T. Sugiyama, A. Kubo, T. Nakano","doi":"10.7567/ssdm.2019.b-6-05","DOIUrl":"https://doi.org/10.7567/ssdm.2019.b-6-05","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128169600","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Experimental study of bias stress degradation of organic thin film transistors 有机薄膜晶体管偏置应力退化的实验研究
K. Oshima, M. Saito, M. Shintani, K. Kuribara, Y. Ogasahara, T. Sato
{"title":"Experimental study of bias stress degradation of organic thin film transistors","authors":"K. Oshima, M. Saito, M. Shintani, K. Kuribara, Y. Ogasahara, T. Sato","doi":"10.7567/ssdm.2019.a-6-04","DOIUrl":"https://doi.org/10.7567/ssdm.2019.a-6-04","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124003610","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Quick measurement method of carbon-related defect concentration in n-type GaN by dual-color-sub-bandgap-light-excited isothermal capacitance transient spectroscopy 双色亚带隙光激发等温电容瞬态光谱快速测量n型GaN中碳相关缺陷浓度方法
K. Kanegae, T. Narita, K. Tomita, T. Kachi, M. Horita, T. Kimoto, J. Suda
{"title":"Quick measurement method of carbon-related defect concentration in n-type GaN by dual-color-sub-bandgap-light-excited isothermal capacitance transient spectroscopy","authors":"K. Kanegae, T. Narita, K. Tomita, T. Kachi, M. Horita, T. Kimoto, J. Suda","doi":"10.7567/ssdm.2019.k-7-04","DOIUrl":"https://doi.org/10.7567/ssdm.2019.k-7-04","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115131673","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Size Modulated Nitrogen-Doped Graphene Oxide Quantum Dots for Diffusive Memristor based Synaptic Device Applications 尺寸调制氮掺杂氧化石墨烯量子点用于扩散忆阻器的突触器件应用
A. Sokolov, Yu‐Rim Jeon, H. Han, B. Ku, G. Hassan, H. Abbas, C. Choi
{"title":"Size Modulated Nitrogen-Doped Graphene Oxide Quantum Dots for Diffusive Memristor based Synaptic Device Applications","authors":"A. Sokolov, Yu‐Rim Jeon, H. Han, B. Ku, G. Hassan, H. Abbas, C. Choi","doi":"10.7567/ssdm.2019.h-7-04","DOIUrl":"https://doi.org/10.7567/ssdm.2019.h-7-04","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115241347","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Disentanglement of Spin Orbit Torques Originated from Spin Hall Effect and Rashba-Edelstein Effect Using Harmonic Hall Measurements 基于谐波霍尔测量的自旋霍尔效应和Rashba-Edelstein效应的自旋轨道力矩解纠缠
Y. Du, H. Gamou, Shin-ichiro Takahashi, S. Karube, M. Kohda, J. Nitta
We report on the quantitative separation of the spin orbit torques (SOTs) originated from the spin Hall effect (SHE) and the Rashba-Edelstein effect (REE), by performing the Harmonic Hall measurements for epitaxial platinum/cobalt (Pt/Co) bilayers. The damping-like (DL-) and field-like (FL-)SOT efficiencies (ξDL and ξFL ) are quantified respectively by fitting the SOT data with corresponding spin-diffusion equation. As a result, the ξDL originated from the Pt bulk region (ξDL0) decreases significantly with decreasing temperature, while the ξFL from the substrate (sub.)/Pt (ξFL1) and Pt/Co (ξFL2) interface barely change, suggesting that the origin of FL-SOT is the REE instead of the SHE; the sign of ξFL1 is opposite to ξFL2, which is consistent with the REE where the direction of the spin accumulation depends on the interfacial electric field induced by broken inversion symmetry. Moreover, the ξDL induced by sub./Pt (ξDL1) and Pt/Co (ξDL2) interfaces are found to be about 1 order of magnitude smaller than maximum ξDL0 , while their sign are consistent with respective ξFL (ξFL1 and ξFL2 ). Our work presents a thorough disentanglement of the SOTs in heavy metal/ferromagnet bilayers in which both SHE and REE are present, and provides deterministic answers to the fundamental question on their physical origin.
本文通过对外延铂/钴(Pt/Co)双分子层进行谐波霍尔测量,报道了自旋霍尔效应(SHE)和Rashba-Edelstein效应(REE)产生的自旋轨道力矩(SOTs)的定量分离。用自旋扩散方程拟合SOT数据,分别量化了类阻尼(DL-)和类场(FL-)SOT效率(ξDL和ξFL)。结果表明,随着温度的降低,源自Pt体区(ξDL0)的ξFL显著降低,而源自衬底(sub)/Pt (ξFL1)和Pt/Co (ξFL2)界面的ξFL几乎没有变化,表明FL-SOT的来源是REE而不是SHE;ξFL1的符号与ξFL2相反,这与稀土元素的自旋积累方向取决于反转对称性破缺引起的界面电场一致。此外,发现sub./Pt (ξDL1)和Pt/Co (ξDL2)界面诱导的ξDL比最大值ξDL0小1个数量级左右,其符号与各自的ξFL (ξFL1和ξFL2)一致。我们的工作提出了重金属/铁磁体双层中SHE和REE存在的SOTs的彻底解缠,并为其物理起源的基本问题提供了确定性的答案。
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引用次数: 0
期刊
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials
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