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Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials最新文献

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Magnetic Dynamics of Quasi-antiferromagnetic Layer Fabricated by 90 Degrees Magnetic Coupling 90度磁耦合制备准反铁磁层的磁动力学
S. Horiike, G. Nagashima, Y. Kurokawa, Y. Zhong, K. Yamanoi, T. Tanaka, K. Matsuyama, H. Yuasa
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引用次数: 0
Plasma Induced Damage on Inter-Metal Dielectric in Nano-meter FinFET Processes 等离子体对纳米FinFET工艺中金属间介电介质的损伤
C. Su
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引用次数: 0
Practical Extraction Method of Interface State Density near Conduction Band Edge of 4H-SiC MOSFET Channel 4H-SiC MOSFET沟道导带边缘界面态密度的实用提取方法
S. Sato, K. Kobayashi, Y. Mori, D. Hisamoto, A. Shima
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引用次数: 1
Growth and Electrical Properties of In-Situ Doped GeSn Nanowires for Low Power Tunnel Field Effect Transistor. 低功率隧道场效应晶体管原位掺杂GeSn纳米线的生长和电学性能。
T. Haffner, F. Bassani, P. Gentile, N. Pauc, E. Martínez, T. Baron, E. Robin, S. David, B. Salem
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引用次数: 0
Pregrowth treatment induced below-bandgap states in GaAs 预生长处理诱导砷化镓的带隙下态
R. Roca, K. Fukui, H. Mizuno, M. Suzuki, I. Kamiya
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引用次数: 0
Development of Electret made of SiO2 Thin Film with Micro Bump Array to Avoid Electrostatic Stiction and Enhance Its Surface Potential 微碰撞阵列二氧化硅薄膜驻极体的研制以避免静电粘滞并提高其表面电位
M. Suzuki, Y. Onishi, T. Takahashi, S. Aoyagi
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引用次数: 0
Cross-Coupled Differential Multiple-Time-Programming Memory Cells by CMOS FinFET Technologies 基于CMOS FinFET技术的交叉耦合差分多时间编程存储单元
Yu-Fan Chiang, Che-Wei Chu, Y. Chih, J. Chang, C. Lin, Y. King
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引用次数: 0
RF Power Performance of 2DHG Diamond MOSFETs with thick ALD-Al2O3 Film 厚ALD-Al2O3膜2DHG金刚石mosfet的射频功率性能
K. Kudara, S. Imanishi, K. Horikawa, A. Hiraiwa, H. Kawarada
{"title":"RF Power Performance of 2DHG Diamond MOSFETs with thick ALD-Al2O3 Film","authors":"K. Kudara, S. Imanishi, K. Horikawa, A. Hiraiwa, H. Kawarada","doi":"10.7567/ssdm.2019.k-5-02","DOIUrl":"https://doi.org/10.7567/ssdm.2019.k-5-02","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121294492","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High-Resolution Observation of In-Plane Carrier Concentration Nonuniformity in Vertical GaN p-n Diode Using Franz-Keldysh Effect and Avalanche Multiplication 利用Franz-Keldysh效应和雪崩倍增对垂直GaN p-n二极管面内载流子浓度非均匀性的高分辨率观测
S. Kawasaki, H. Fukushima, S. Usami, Y. Ando, A. Tanaka, M. Deki, M. Kushimoto, S. Nitta, Y. Honda, H. Amano
{"title":"High-Resolution Observation of In-Plane Carrier Concentration Nonuniformity in Vertical GaN p-n Diode Using Franz-Keldysh Effect and Avalanche Multiplication","authors":"S. Kawasaki, H. Fukushima, S. Usami, Y. Ando, A. Tanaka, M. Deki, M. Kushimoto, S. Nitta, Y. Honda, H. Amano","doi":"10.7567/ssdm.2019.k-7-02","DOIUrl":"https://doi.org/10.7567/ssdm.2019.k-7-02","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129015183","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Uniformity Characterization of Printed Schottky Contacts Formed on n-GaN Epitaxial Layers by Using Ag Nanoink 银纳米油墨在n-GaN外延层上形成印刷肖特基触点的均匀性表征
K. Shiojima, Y. Kashiwagi, A. Koizumi, M. Saitoh, T. Tamai, Y. Fujiwara
{"title":"Uniformity Characterization of Printed Schottky Contacts Formed on n-GaN Epitaxial Layers by Using Ag Nanoink","authors":"K. Shiojima, Y. Kashiwagi, A. Koizumi, M. Saitoh, T. Tamai, Y. Fujiwara","doi":"10.7567/ssdm.2019.j-6-02","DOIUrl":"https://doi.org/10.7567/ssdm.2019.j-6-02","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"1864 7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128035776","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
期刊
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials
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