Pub Date : 2020-07-01DOI: 10.1051/epjap/2020190297
Kiyoteru Kobayashi, H. Mino
We have evaluated the hole trapping capability of the silicon carbonitride (SiCN) dielectric film for application in metal-oxide-nitride-oxide-silicon (MONOS)-type non-volatile memory devices. After a great number of holes were injected to the SiCN charge trap layer of memory capacitors at high applied voltages, the flat-band voltage shift ΔV fb,h of the capacitors was saturated and the charge centroid location of holes trapped in the SiCN layer was found to reach at 1.8–2.0 nm from the blocking oxide-charge trap layer interface. Using the obtained ΔV fb,h and charge centroid values, the maximum density of holes trapped in the SiCN layer was estimated to be 1.2 × 1013 holes/cm2 , which was higher than that trapped in a silicon nitride charge trap layer (=1.0 × 1013 holes/cm2 ). It is concluded that the high density of trapped holes caused large ΔV fb,h in the memory capacitors with the SiCN layer.
{"title":"Hole trapping capability of silicon carbonitride charge trap layers","authors":"Kiyoteru Kobayashi, H. Mino","doi":"10.1051/epjap/2020190297","DOIUrl":"https://doi.org/10.1051/epjap/2020190297","url":null,"abstract":"We have evaluated the hole trapping capability of the silicon carbonitride (SiCN) dielectric film for application in metal-oxide-nitride-oxide-silicon (MONOS)-type non-volatile memory devices. After a great number of holes were injected to the SiCN charge trap layer of memory capacitors at high applied voltages, the flat-band voltage shift ΔV fb,h of the capacitors was saturated and the charge centroid location of holes trapped in the SiCN layer was found to reach at 1.8–2.0 nm from the blocking oxide-charge trap layer interface. Using the obtained ΔV fb,h and charge centroid values, the maximum density of holes trapped in the SiCN layer was estimated to be 1.2 × 1013 holes/cm2 , which was higher than that trapped in a silicon nitride charge trap layer (=1.0 × 1013 holes/cm2 ). It is concluded that the high density of trapped holes caused large ΔV fb,h in the memory capacitors with the SiCN layer.","PeriodicalId":12228,"journal":{"name":"European Physical Journal-applied Physics","volume":null,"pages":null},"PeriodicalIF":1.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82144869","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-06-06DOI: 10.1051/epjap/2020200016
F. Wan, Xiaoyu Huangi, P. Thakur, A. Thakur, S. Lalléchère, B. Ravelo
The unfamiliar negative group-delay (NGD) phenomenon is experimented with structure constituted by tee-connectors and coaxial cables. The topology of the NGD generator is described. It consists of two parallel 50-Ω characteristic impedance cables. The S-parameter model in function of the cable physical lengths is established. The existence condition enabling to understand the NGD phenomenon is defined. A proof of concept simply is constituted by two three-port SMA connectors, three SMA transitions and 13-cm length cables. The NGD experimentation is performed from 1.5 GHz to 3.5 GHz. Tri-band NGD aspects in good agreement with the theory and simulation is observed experimentally. Particularly, high figure-of-merit NGD circuit with −3 ns NGD level, less than 2 dB insertion loss and 12 dB return loss around 3 GHz centre frequency is measured.
{"title":"Negative group delay experimentation with tee connector and cable structures","authors":"F. Wan, Xiaoyu Huangi, P. Thakur, A. Thakur, S. Lalléchère, B. Ravelo","doi":"10.1051/epjap/2020200016","DOIUrl":"https://doi.org/10.1051/epjap/2020200016","url":null,"abstract":"The unfamiliar negative group-delay (NGD) phenomenon is experimented with structure constituted by tee-connectors and coaxial cables. The topology of the NGD generator is described. It consists of two parallel 50-Ω characteristic impedance cables. The S-parameter model in function of the cable physical lengths is established. The existence condition enabling to understand the NGD phenomenon is defined. A proof of concept simply is constituted by two three-port SMA connectors, three SMA transitions and 13-cm length cables. The NGD experimentation is performed from 1.5 GHz to 3.5 GHz. Tri-band NGD aspects in good agreement with the theory and simulation is observed experimentally. Particularly, high figure-of-merit NGD circuit with −3 ns NGD level, less than 2 dB insertion loss and 12 dB return loss around 3 GHz centre frequency is measured.","PeriodicalId":12228,"journal":{"name":"European Physical Journal-applied Physics","volume":null,"pages":null},"PeriodicalIF":1.0,"publicationDate":"2020-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79144246","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-06-01DOI: 10.1051/epjap/2020190250
A. Fantoni, João Costa, P. Lourenço, M. Vieira
Amorphous silicon PECVD photonic integrated devices are promising candidates for low cost sensing applications. This manuscript reports a simulation analysis about the impact on the overall efficiency caused by the lithography imperfections in the deposition process. The tolerance to the fabrication defects of a photonic sensor based on surface plasmonic resonance is analysed. The simulations are performed with FDTD and BPM algorithms. The device is a plasmonic interferometer composed by an a-Si:H waveguide covered by a thin gold layer. The sensing analysis is performed by equally splitting the input light into two arms, allowing the sensor to be calibrated by its reference arm. Two different 1 × 2 power splitter configurations are presented: a directional coupler and a multimode interference splitter. The waveguide sidewall roughness is considered as the major negative effect caused by deposition imperfections. The simulation results show that plasmonic effects can be excited in the interferometric waveguide structure, allowing a sensing device with enough sensitivity to support the functioning of a bio sensor for high throughput screening. In addition, the good tolerance to the waveguide wall roughness, points out the PECVD deposition technique as reliable method for the overall sensor system to be produced in a low-cost system. The large area deposition of photonics structures, allowed by the PECVD method, can be explored to design a multiplexed system for analysis of multiple biomarkers to further increase the tolerance to fabrication defects.
{"title":"Computer simulation study about the dependence of amorphous silicon photonic waveguides efficiency on the material quality","authors":"A. Fantoni, João Costa, P. Lourenço, M. Vieira","doi":"10.1051/epjap/2020190250","DOIUrl":"https://doi.org/10.1051/epjap/2020190250","url":null,"abstract":"Amorphous silicon PECVD photonic integrated devices are promising candidates for low cost sensing applications. This manuscript reports a simulation analysis about the impact on the overall efficiency caused by the lithography imperfections in the deposition process. The tolerance to the fabrication defects of a photonic sensor based on surface plasmonic resonance is analysed. The simulations are performed with FDTD and BPM algorithms. The device is a plasmonic interferometer composed by an a-Si:H waveguide covered by a thin gold layer. The sensing analysis is performed by equally splitting the input light into two arms, allowing the sensor to be calibrated by its reference arm. Two different 1 × 2 power splitter configurations are presented: a directional coupler and a multimode interference splitter. The waveguide sidewall roughness is considered as the major negative effect caused by deposition imperfections. The simulation results show that plasmonic effects can be excited in the interferometric waveguide structure, allowing a sensing device with enough sensitivity to support the functioning of a bio sensor for high throughput screening. In addition, the good tolerance to the waveguide wall roughness, points out the PECVD deposition technique as reliable method for the overall sensor system to be produced in a low-cost system. The large area deposition of photonics structures, allowed by the PECVD method, can be explored to design a multiplexed system for analysis of multiple biomarkers to further increase the tolerance to fabrication defects.","PeriodicalId":12228,"journal":{"name":"European Physical Journal-applied Physics","volume":null,"pages":null},"PeriodicalIF":1.0,"publicationDate":"2020-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90325248","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-06-01DOI: 10.1051/epjap/2020200112
Dalila Salem, M. Shalabi, Fathi Souissi, Farida Nemmar, M. Belkaid, Muhammad Aamir, J. Nunzi
Herein, we demonstrate the improvement in performance of inverted organic solar cells fabricated with an Ag-nanoparticle (Np) modified ZnO-electron transport layer. Ag NP incorporation into the ZnO layer increases light harvesting efficiency of the solar device which untimely improves J sc of the device. As a result, power conversion efficiency (PCE) of ZnO + Ag Np buffer layer based (ITO/ZnO:Ag NP/P3HT: PCBM/MoO3 /Ag) device reaches 3.02% which is 27% higher than ITO/ZnO/P3HT: PCBM/MoO3 /Ag device and 55.6% higher than the electron transfer layer(ETL) free (ITO/P3HT: PCBM/MoO3 /Ag) control device.
{"title":"Ag nanoparticle-based efficiency enhancement in an inverted organic solar cell","authors":"Dalila Salem, M. Shalabi, Fathi Souissi, Farida Nemmar, M. Belkaid, Muhammad Aamir, J. Nunzi","doi":"10.1051/epjap/2020200112","DOIUrl":"https://doi.org/10.1051/epjap/2020200112","url":null,"abstract":"Herein, we demonstrate the improvement in performance of inverted organic solar cells fabricated with an Ag-nanoparticle (Np) modified ZnO-electron transport layer. Ag NP incorporation into the ZnO layer increases light harvesting efficiency of the solar device which untimely improves J sc of the device. As a result, power conversion efficiency (PCE) of ZnO + Ag Np buffer layer based (ITO/ZnO:Ag NP/P3HT: PCBM/MoO3 /Ag) device reaches 3.02% which is 27% higher than ITO/ZnO/P3HT: PCBM/MoO3 /Ag device and 55.6% higher than the electron transfer layer(ETL) free (ITO/P3HT: PCBM/MoO3 /Ag) control device.","PeriodicalId":12228,"journal":{"name":"European Physical Journal-applied Physics","volume":null,"pages":null},"PeriodicalIF":1.0,"publicationDate":"2020-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80954048","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-06-01DOI: 10.1051/epjap/2020200099
S. Pal, N. Mehta, J. MacDonald, D. Sharma
In this endeavor, we have synthesized novel quaternary glassy Se78-x Te20 Sn2 Gex (0 ≤ x ≤ 6) alloys by the well-known rapid cooling of melt under quenching technique, to study the effect of Germanium on thermodynamic and thermo-mechanical properties. In particular, we employed Differential Scanning Calorimetry (DSC) technique for the investigation of thermodynamic parameters (e.g., specific heat Cp and enthalpy ΔH ) in the glass-transition-region (GTR). Differential Scanning Calorimetry (DSC) experiment was run under non-isothermal conditions. The thermo-mechanical parameters i.e., micro-hardness, micro-void volume, the energy of creation of micro-void, elasticity, density, compactness, and molar volume are also calculated. It was observed that there is a large increment in Cp values in the GTR. Further analysis shows that the Cp values above the GTR (i.e., Cp = Cpe equilibrium specific heat) and below the GTR (i.e., Cp = Cpg glass specific heat) are vastly composition dependent. The increment in specific heat value after Ge incorporation is explained in terms of molar volume.
{"title":"Composition dependence of thermo-dynamical and thermo-mechanical properties in SeTeSnGe chalcogenide glasses (ChGs)","authors":"S. Pal, N. Mehta, J. MacDonald, D. Sharma","doi":"10.1051/epjap/2020200099","DOIUrl":"https://doi.org/10.1051/epjap/2020200099","url":null,"abstract":"In this endeavor, we have synthesized novel quaternary glassy Se78-x Te20 Sn2 Gex (0 ≤ x ≤ 6) alloys by the well-known rapid cooling of melt under quenching technique, to study the effect of Germanium on thermodynamic and thermo-mechanical properties. In particular, we employed Differential Scanning Calorimetry (DSC) technique for the investigation of thermodynamic parameters (e.g., specific heat Cp and enthalpy ΔH ) in the glass-transition-region (GTR). Differential Scanning Calorimetry (DSC) experiment was run under non-isothermal conditions. The thermo-mechanical parameters i.e., micro-hardness, micro-void volume, the energy of creation of micro-void, elasticity, density, compactness, and molar volume are also calculated. It was observed that there is a large increment in Cp values in the GTR. Further analysis shows that the Cp values above the GTR (i.e., Cp = Cpe equilibrium specific heat) and below the GTR (i.e., Cp = Cpg glass specific heat) are vastly composition dependent. The increment in specific heat value after Ge incorporation is explained in terms of molar volume.","PeriodicalId":12228,"journal":{"name":"European Physical Journal-applied Physics","volume":null,"pages":null},"PeriodicalIF":1.0,"publicationDate":"2020-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80245870","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-06-01DOI: 10.1051/epjap/2020190368
Y. Sakaguchi, T. Hanashima, Al-Amin Ahmed Simon, M. Mitkova
Silver photodiffusion into amorphous chalcogenides involves the movement of ions controlled by a UV-visible light illumination, and has potential application to memory devices. Understanding the kinetics of this phenomenon will expand the range of possible applications. Herein, we report the excitation photon energy dependence of the silver photodiffusion kinetics in Ag/amorphous Ge20 S80 /Si substrate stacks, probed by neutron reflectivity using four light-emitting diodes with different peak wavelengths. Time-dependent changes were clearly observed in all three of the Ag/Ag-doped reaction/chalcogenide host layers, in terms of layer thickness, scattering length density, and roughness. Silver photodiffusion effectively occurred when the excitation photon energy was greater than the optical gap of the chalcogenide host material. Excitation of lone-pair electrons to anti-bonding states at the chalcogenide layer therefore appears to play a crucial role in triggering silver photodiffusion.
{"title":"Silver photodiffusion into amorphous Ge chalcogenides","authors":"Y. Sakaguchi, T. Hanashima, Al-Amin Ahmed Simon, M. Mitkova","doi":"10.1051/epjap/2020190368","DOIUrl":"https://doi.org/10.1051/epjap/2020190368","url":null,"abstract":"Silver photodiffusion into amorphous chalcogenides involves the movement of ions controlled by a UV-visible light illumination, and has potential application to memory devices. Understanding the kinetics of this phenomenon will expand the range of possible applications. Herein, we report the excitation photon energy dependence of the silver photodiffusion kinetics in Ag/amorphous Ge20 S80 /Si substrate stacks, probed by neutron reflectivity using four light-emitting diodes with different peak wavelengths. Time-dependent changes were clearly observed in all three of the Ag/Ag-doped reaction/chalcogenide host layers, in terms of layer thickness, scattering length density, and roughness. Silver photodiffusion effectively occurred when the excitation photon energy was greater than the optical gap of the chalcogenide host material. Excitation of lone-pair electrons to anti-bonding states at the chalcogenide layer therefore appears to play a crucial role in triggering silver photodiffusion.","PeriodicalId":12228,"journal":{"name":"European Physical Journal-applied Physics","volume":null,"pages":null},"PeriodicalIF":1.0,"publicationDate":"2020-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81272069","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-06-01DOI: 10.1051/epjap/2020190267
Alba Arenas-Hernandez, C. Zuñiga-Islas, Julio César Mendoza-Cervantes
In this paper, we report the results of the optical and electrical properties of TiO2 nanotubes with different morphologies for gas sensing applications. Four nanomaterials of TiO2 were prepared by electrochemical anodization using four different electrolyte solutions: 0.255 wt% NH4 F with 1 wt%, 3 wt%, 6 wt% and 9 wt% of deionized water in ethylene glycol. Micrographs by scanning electron microscopy (SEM) showed different morphologies caused by the variation in the water content of the solutions. Consequently, as an effect of morphology, the photoluminescence intensity in the visible spectrum was modified. By a change of the crystalline phase of TiO2 nanotubes, the oxygen vacancies increased and affected to the optical and electrical properties of TiO2 films. These films were used for detecting gas at room temperature. Hence, we studied and analyzed the relationship of the morphology, elemental composition, phase composition, band gap energy and defect states as a function of the electrical resistance change of TiO2 nanotubes to understand and improve the sensor response.
{"title":"A study of the effect of morphology on the optical and electrical properties of TiO2 nanotubes for gas sensing applications","authors":"Alba Arenas-Hernandez, C. Zuñiga-Islas, Julio César Mendoza-Cervantes","doi":"10.1051/epjap/2020190267","DOIUrl":"https://doi.org/10.1051/epjap/2020190267","url":null,"abstract":"In this paper, we report the results of the optical and electrical properties of TiO2 nanotubes with different morphologies for gas sensing applications. Four nanomaterials of TiO2 were prepared by electrochemical anodization using four different electrolyte solutions: 0.255 wt% NH4 F with 1 wt%, 3 wt%, 6 wt% and 9 wt% of deionized water in ethylene glycol. Micrographs by scanning electron microscopy (SEM) showed different morphologies caused by the variation in the water content of the solutions. Consequently, as an effect of morphology, the photoluminescence intensity in the visible spectrum was modified. By a change of the crystalline phase of TiO2 nanotubes, the oxygen vacancies increased and affected to the optical and electrical properties of TiO2 films. These films were used for detecting gas at room temperature. Hence, we studied and analyzed the relationship of the morphology, elemental composition, phase composition, band gap energy and defect states as a function of the electrical resistance change of TiO2 nanotubes to understand and improve the sensor response.","PeriodicalId":12228,"journal":{"name":"European Physical Journal-applied Physics","volume":null,"pages":null},"PeriodicalIF":1.0,"publicationDate":"2020-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89470007","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-05-20DOI: 10.1051/epjap/2020200018
B. Daniels, T. Overboom, E. Lomonova
Power transformer design requires to model the loss and hysteresis behavior of the laminated steel core, constructed out of high-permeability grain-oriented electrical steel. This work predicts the magnetic loss and hysteresis behavior in the rolling direction of three transformer grade steels, for magnetic flux densities up to and including 1.9 T, and frequencies up to and including 300 Hz. Material characterization parameters for the excess loss, obtained by statistical loss separation for sinusoidal concentric hysteresis loops, are applied in a hysteresis model and govern the dynamic field behavior. The modeled loss is compared and verified with measurement data obtained by an Epstein frame for each steel gauge.
{"title":"Coupled statistical and dynamic loss prediction of high-permeability grain-oriented electrical steel","authors":"B. Daniels, T. Overboom, E. Lomonova","doi":"10.1051/epjap/2020200018","DOIUrl":"https://doi.org/10.1051/epjap/2020200018","url":null,"abstract":"Power transformer design requires to model the loss and hysteresis behavior of the laminated steel core, constructed out of high-permeability grain-oriented electrical steel. This work predicts the magnetic loss and hysteresis behavior in the rolling direction of three transformer grade steels, for magnetic flux densities up to and including 1.9 T, and frequencies up to and including 300 Hz. Material characterization parameters for the excess loss, obtained by statistical loss separation for sinusoidal concentric hysteresis loops, are applied in a hysteresis model and govern the dynamic field behavior. The modeled loss is compared and verified with measurement data obtained by an Epstein frame for each steel gauge.","PeriodicalId":12228,"journal":{"name":"European Physical Journal-applied Physics","volume":null,"pages":null},"PeriodicalIF":1.0,"publicationDate":"2020-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89427293","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-05-01DOI: 10.1051/epjap/2020200028
Jerzy Chudorliński, L. Książek, Piotr Prystupiuk
The article presents the biological aspects of the interaction of magnetic fields on living organisms, the types of signals used for therapy and physical rehabilitation, and the method of their preparation. The controller generating the therapy signals, equipped with a touch panel, is presented and its functions are discussed.
{"title":"Electronic system for activating ions in biological structures","authors":"Jerzy Chudorliński, L. Książek, Piotr Prystupiuk","doi":"10.1051/epjap/2020200028","DOIUrl":"https://doi.org/10.1051/epjap/2020200028","url":null,"abstract":"The article presents the biological aspects of the interaction of magnetic fields on living organisms, the types of signals used for therapy and physical rehabilitation, and the method of their preparation. The controller generating the therapy signals, equipped with a touch panel, is presented and its functions are discussed.","PeriodicalId":12228,"journal":{"name":"European Physical Journal-applied Physics","volume":null,"pages":null},"PeriodicalIF":1.0,"publicationDate":"2020-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76479985","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-05-01DOI: 10.1051/epjap/2020200052
M. Bertoluzzo, M. Forzan, P. di Barba, M. E. Mognaschi, E. Sieni
Electrical vehicles have to be periodically recharged. Currently, they are plugged to power station by cables. Wireless Power Transfer (WPT) Systems could be used instead of traditional cable connection to charge the batteries of electric vehicles. These systems are based on a couple of coils, one on the vehicle bottom and one under the road connected to a power station. Nevertheless, these systems are affected by the magnetic characteristic of the coupling coils, so that these devices should be carefully designed. In this paper, a pair of faced pancake coils equipped with ferrite core is considered. The possible geometries of the coils are designed using genetic optimization algorithms searching for optimal mutual inductance and saving in copper. This paper presents the analysis of the Pareto solutions obtained using automatic design strategy.
{"title":"Pareto optimal solutions of a wireless power transfer system","authors":"M. Bertoluzzo, M. Forzan, P. di Barba, M. E. Mognaschi, E. Sieni","doi":"10.1051/epjap/2020200052","DOIUrl":"https://doi.org/10.1051/epjap/2020200052","url":null,"abstract":"Electrical vehicles have to be periodically recharged. Currently, they are plugged to power station by cables. Wireless Power Transfer (WPT) Systems could be used instead of traditional cable connection to charge the batteries of electric vehicles. These systems are based on a couple of coils, one on the vehicle bottom and one under the road connected to a power station. Nevertheless, these systems are affected by the magnetic characteristic of the coupling coils, so that these devices should be carefully designed. In this paper, a pair of faced pancake coils equipped with ferrite core is considered. The possible geometries of the coils are designed using genetic optimization algorithms searching for optimal mutual inductance and saving in copper. This paper presents the analysis of the Pareto solutions obtained using automatic design strategy.","PeriodicalId":12228,"journal":{"name":"European Physical Journal-applied Physics","volume":null,"pages":null},"PeriodicalIF":1.0,"publicationDate":"2020-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87245623","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：