Pub Date : 2010-06-21DOI: 10.1109/MSMW.2010.5546041
A. Tovstolytkin, A. Pogorily, V. V. Dzyublyuk, D.I. Podylalovskii, A. Matviyenko
Doped perovskite manganites RAMnO3 with rare-earth ions R and alkaline (or alkaline-earth) ions A have received considerable attention because of their interesting magnetic, magnetoresistive, and microwave properties [1,2,3]. Much effort, both theoretical and experimental, has been devoted to the investigation of the underlying physics associated with their extraordinary magnetoresistive behavior. In contrast, work on magnetic properties such as magnetic anisotropy and micromagnetic structure is very limited, while the relevant knowledge is obviously a prerequisite for the design and fabrication of heteroepitaxy devices such as spin valves, tunneling junctions, and etc. [4].
{"title":"Out-of-plane spin alighnment in ultrathin films of sodium-doped manganites as evidenced by FMR measurements","authors":"A. Tovstolytkin, A. Pogorily, V. V. Dzyublyuk, D.I. Podylalovskii, A. Matviyenko","doi":"10.1109/MSMW.2010.5546041","DOIUrl":"https://doi.org/10.1109/MSMW.2010.5546041","url":null,"abstract":"Doped perovskite manganites RAMnO3 with rare-earth ions R and alkaline (or alkaline-earth) ions A have received considerable attention because of their interesting magnetic, magnetoresistive, and microwave properties [1,2,3]. Much effort, both theoretical and experimental, has been devoted to the investigation of the underlying physics associated with their extraordinary magnetoresistive behavior. In contrast, work on magnetic properties such as magnetic anisotropy and micromagnetic structure is very limited, while the relevant knowledge is obviously a prerequisite for the design and fabrication of heteroepitaxy devices such as spin valves, tunneling junctions, and etc. [4].","PeriodicalId":129834,"journal":{"name":"2010 INTERNATIONAL KHARKOV SYMPOSIUM ON PHYSICS AND ENGINEERING OF MICROWAVES, MILLIMETER AND SUBMILLIMETER WAVES","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128358236","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-21DOI: 10.1109/MSMW.2010.5545994
I. Magda
Impulse electromagnetic fields of large intensity in combination with ultra-short pulse (USP) duration are widely used for modification a property of materials, creation special types of radars and test facilities at studies of electromagnetic compatibility/strength (EMC/S). Long-term experience of NSC KIPT in the area of high-power impulse radiation sources used for tests of radio- and electronic equipment and components to impact of USP microwaves with narrowband (NB) and ultra-wideband (UWB) frequency ranges is considered below. General data on USP radiation sources integrated into test stands of NSC KIPT are shown in Table 1 [1].
{"title":"Sources of intense impulse microwave emission","authors":"I. Magda","doi":"10.1109/MSMW.2010.5545994","DOIUrl":"https://doi.org/10.1109/MSMW.2010.5545994","url":null,"abstract":"Impulse electromagnetic fields of large intensity in combination with ultra-short pulse (USP) duration are widely used for modification a property of materials, creation special types of radars and test facilities at studies of electromagnetic compatibility/strength (EMC/S). Long-term experience of NSC KIPT in the area of high-power impulse radiation sources used for tests of radio- and electronic equipment and components to impact of USP microwaves with narrowband (NB) and ultra-wideband (UWB) frequency ranges is considered below. General data on USP radiation sources integrated into test stands of NSC KIPT are shown in Table 1 [1].","PeriodicalId":129834,"journal":{"name":"2010 INTERNATIONAL KHARKOV SYMPOSIUM ON PHYSICS AND ENGINEERING OF MICROWAVES, MILLIMETER AND SUBMILLIMETER WAVES","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129909332","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-21DOI: 10.1109/MSMW.2010.5546034
A. I. Goroshko
The spurious HE12and HE−+31modes are brought about not only in the hollow dielectric waveguide inhomogeneities [1,2] (namely, bendings, breaks (or discontinuities), etc),but also when the waveguide (along with an operating HE11 mode) becomes energized from the microwave oscillator and the laser. They, much like HE11, are linearly polarized. In consequence of this, these modes can well be suppressed using the filter built around the resonator acting as a segment bounded by one-dimensional wire gratings. The E vector polarization is parallel to wires. For an arbitrary length of this type of resonator the factor δ of the mode HEnm power transmission through the resonator, including the attenuation constant of the above mode and the phase-change constant ßnm, is determined by the following expression: equations where T and R are the power transmission and reflection factors for a single grating, whereas Φ is the wave phase being reflected from the grating. The peak microwave power transmission through the resonator occurs with a resonator length expressed as equations where q is the half-wave number the HEnmmode for the resonator length of δ, λ is the HEnm mode wavelength in the waveguide.
{"title":"The spurious-mode filter of a THz-range hollow dielectric waveguide","authors":"A. I. Goroshko","doi":"10.1109/MSMW.2010.5546034","DOIUrl":"https://doi.org/10.1109/MSMW.2010.5546034","url":null,"abstract":"The spurious HE12and HE−+31modes are brought about not only in the hollow dielectric waveguide inhomogeneities [1,2] (namely, bendings, breaks (or discontinuities), etc),but also when the waveguide (along with an operating HE11 mode) becomes energized from the microwave oscillator and the laser. They, much like HE11, are linearly polarized. In consequence of this, these modes can well be suppressed using the filter built around the resonator acting as a segment bounded by one-dimensional wire gratings. The E vector polarization is parallel to wires. For an arbitrary length of this type of resonator the factor δ of the mode HEnm power transmission through the resonator, including the attenuation constant of the above mode and the phase-change constant ßnm, is determined by the following expression: equations where T and R are the power transmission and reflection factors for a single grating, whereas Φ is the wave phase being reflected from the grating. The peak microwave power transmission through the resonator occurs with a resonator length expressed as equations where q is the half-wave number the HEnmmode for the resonator length of δ, λ is the HEnm mode wavelength in the waveguide.","PeriodicalId":129834,"journal":{"name":"2010 INTERNATIONAL KHARKOV SYMPOSIUM ON PHYSICS AND ENGINEERING OF MICROWAVES, MILLIMETER AND SUBMILLIMETER WAVES","volume":"111 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126901566","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-21DOI: 10.1109/MSMW.2010.5546113
V. Khaikin, V. R. Zakamov, V. Shashkin, S. Kuzmin, V. Radzikhovsky
Results of noise and impedance optimization of a W-band receiver-module are given. A wideband compact receiver-module for MM wave passive imaging array has been developed on the basis of InP MMIC LNA and a highly sensitive impedance matched low-barrier detector diode. Achieved bandwidth is 85–100 GHz, the gain factor is 30 dB that was sufficient to provide 15 mK/Hz1 temperature sensitivity of the receiver-module. Tests results of the receiver-module are presented.
{"title":"A wideband receiver-module for passive MM wave imaging array: Optimization and test results","authors":"V. Khaikin, V. R. Zakamov, V. Shashkin, S. Kuzmin, V. Radzikhovsky","doi":"10.1109/MSMW.2010.5546113","DOIUrl":"https://doi.org/10.1109/MSMW.2010.5546113","url":null,"abstract":"Results of noise and impedance optimization of a W-band receiver-module are given. A wideband compact receiver-module for MM wave passive imaging array has been developed on the basis of InP MMIC LNA and a highly sensitive impedance matched low-barrier detector diode. Achieved bandwidth is 85–100 GHz, the gain factor is 30 dB that was sufficient to provide 15 mK/Hz1 temperature sensitivity of the receiver-module. Tests results of the receiver-module are presented.","PeriodicalId":129834,"journal":{"name":"2010 INTERNATIONAL KHARKOV SYMPOSIUM ON PHYSICS AND ENGINEERING OF MICROWAVES, MILLIMETER AND SUBMILLIMETER WAVES","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129217926","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-21DOI: 10.1109/MSMW.2010.5546007
V. Volosyuk, A. A. Shmatko, E. Aksyonov
The given working out is based on feature of laser radiation which has been found out after the invention of lasers. Feature consists that at reflection from a rough surface, the coherent beam forms on the screen difficult granular structure (fig. 1).
{"title":"Digital speckle-interferometric contactless measurer","authors":"V. Volosyuk, A. A. Shmatko, E. Aksyonov","doi":"10.1109/MSMW.2010.5546007","DOIUrl":"https://doi.org/10.1109/MSMW.2010.5546007","url":null,"abstract":"The given working out is based on feature of laser radiation which has been found out after the invention of lasers. Feature consists that at reflection from a rough surface, the coherent beam forms on the screen difficult granular structure (fig. 1).","PeriodicalId":129834,"journal":{"name":"2010 INTERNATIONAL KHARKOV SYMPOSIUM ON PHYSICS AND ENGINEERING OF MICROWAVES, MILLIMETER AND SUBMILLIMETER WAVES","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130597254","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-21DOI: 10.1109/MSMW.2010.5546136
A. Sužiedėlis, S. Ašmontas, J. Gradauskas, J. Kundrotas, V. Kazlauskaitė, A. Cerskus, V. Derkach, R. Golovashchenko, E. Goroshko, V. Korzh, T. Anbinderis
Microwave (MW) detectors operating on the basis of charge carrier heating phenomena in semiconductor structures attracts attention of researchers due to the possibility to use such detectors in a wide frequency range. The voltage detected in the devices consists of hot carrier electromotive force arising over the contacts of the structure having n-n+ (or p-p+) junction. Planar design of the microwave diode enabled us to measure the power of electromagnetic radiation from microwaves up to infrared region [1]. The measurements were performed at room temperature, while, the decrease of crystal lattice temperature increases voltage sensitivity of the MW [2]. This increase is caused by an electron mobility and energy relaxation time increase in a high resistivity semiconductor. The sensitivity increase is also influenced by charge carrier density decrease due to their freeze-out at low temperatures. However in a number of applications flat dependence of voltage sensitivity on temperature is preferred. As it is well known, the electron mobility and energy relaxation time depend slightly on temperature in low resistivity semiconductors [3]. Moreover, carrier density in degenerated semiconductors does not depend on temperature. However, carrier heating in degenerated semiconductors encounters phonon assisted difficulties. We have recently demonstrated the ability to detect microwave radiation with planar microwave diode on the base of n-n+ junction with low resistivity n-GaAs at room temperature [4].
{"title":"Temperature dependence of the detected voltage of planar microwave diode that operation is based on carrier heating phenomena in strong electric field","authors":"A. Sužiedėlis, S. Ašmontas, J. Gradauskas, J. Kundrotas, V. Kazlauskaitė, A. Cerskus, V. Derkach, R. Golovashchenko, E. Goroshko, V. Korzh, T. Anbinderis","doi":"10.1109/MSMW.2010.5546136","DOIUrl":"https://doi.org/10.1109/MSMW.2010.5546136","url":null,"abstract":"Microwave (MW) detectors operating on the basis of charge carrier heating phenomena in semiconductor structures attracts attention of researchers due to the possibility to use such detectors in a wide frequency range. The voltage detected in the devices consists of hot carrier electromotive force arising over the contacts of the structure having n-n+ (or p-p+) junction. Planar design of the microwave diode enabled us to measure the power of electromagnetic radiation from microwaves up to infrared region [1]. The measurements were performed at room temperature, while, the decrease of crystal lattice temperature increases voltage sensitivity of the MW [2]. This increase is caused by an electron mobility and energy relaxation time increase in a high resistivity semiconductor. The sensitivity increase is also influenced by charge carrier density decrease due to their freeze-out at low temperatures. However in a number of applications flat dependence of voltage sensitivity on temperature is preferred. As it is well known, the electron mobility and energy relaxation time depend slightly on temperature in low resistivity semiconductors [3]. Moreover, carrier density in degenerated semiconductors does not depend on temperature. However, carrier heating in degenerated semiconductors encounters phonon assisted difficulties. We have recently demonstrated the ability to detect microwave radiation with planar microwave diode on the base of n-n+ junction with low resistivity n-GaAs at room temperature [4].","PeriodicalId":129834,"journal":{"name":"2010 INTERNATIONAL KHARKOV SYMPOSIUM ON PHYSICS AND ENGINEERING OF MICROWAVES, MILLIMETER AND SUBMILLIMETER WAVES","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123479613","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-21DOI: 10.1109/MSMW.2010.5545989
D. Pasquet, C. Andrei, D. Lesenechal, P. Descamps
The noise parameters are useful for the design of low noise amplifiers. They are usually deducted by the measurement of the noise figure that varies with the impedance presented at the input as in Eq. 1. F= FMIN + RN over ∜ YS|YS − YOPT|2 (1) where YS is the admittance presented at the input and YOPT is the admittance for which the noise figure has its lower value FMIN. RN is the noise resistance that characterizes the sensitivity to the variation of the impedance. Many optimization methods [1] have been developed in order to reach FMIN, RN and YOPT from many measurement points.
{"title":"New measurement method for two-port noise parameters","authors":"D. Pasquet, C. Andrei, D. Lesenechal, P. Descamps","doi":"10.1109/MSMW.2010.5545989","DOIUrl":"https://doi.org/10.1109/MSMW.2010.5545989","url":null,"abstract":"The noise parameters are useful for the design of low noise amplifiers. They are usually deducted by the measurement of the noise figure that varies with the impedance presented at the input as in Eq. 1. F= F<inf>MIN</inf> + R<inf>N</inf> over ∜ Y<inf>S</inf>|Y<inf>S</inf> − Y<inf>OPT</inf>|<sup>2</sup> (1) where Y<inf>S</inf> is the admittance presented at the input and Y<inf>OPT</inf> is the admittance for which the noise figure has its lower value F<inf>MIN</inf>. R<inf>N</inf> is the noise resistance that characterizes the sensitivity to the variation of the impedance. Many optimization methods [1] have been developed in order to reach F<inf>MIN</inf>, R<inf>N</inf> and Y<inf>OPT</inf> from many measurement points.","PeriodicalId":129834,"journal":{"name":"2010 INTERNATIONAL KHARKOV SYMPOSIUM ON PHYSICS AND ENGINEERING OF MICROWAVES, MILLIMETER AND SUBMILLIMETER WAVES","volume":"216 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114315915","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-21DOI: 10.1109/MSMW.2010.5546109
O. V. Arkhypov, A. Antonov
Relatively low spatial resolution of not great millimeter radio-telescopes narrows the range of available tasks in the field of solar physics. However, there are large scale phenomena on the Sun hidden among fine details of hires images. For example, the global distribution of solar activity is apparently connected with the processes in the depths of the convection zone.
{"title":"Millimeter radio astronomy as a probe for convective zone of the Sun","authors":"O. V. Arkhypov, A. Antonov","doi":"10.1109/MSMW.2010.5546109","DOIUrl":"https://doi.org/10.1109/MSMW.2010.5546109","url":null,"abstract":"Relatively low spatial resolution of not great millimeter radio-telescopes narrows the range of available tasks in the field of solar physics. However, there are large scale phenomena on the Sun hidden among fine details of hires images. For example, the global distribution of solar activity is apparently connected with the processes in the depths of the convection zone.","PeriodicalId":129834,"journal":{"name":"2010 INTERNATIONAL KHARKOV SYMPOSIUM ON PHYSICS AND ENGINEERING OF MICROWAVES, MILLIMETER AND SUBMILLIMETER WAVES","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114768106","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-21DOI: 10.1109/MSMW.2010.5546130
Y. Rassokhina, V. Krizhanovski
The strict generalized formulation of the transverse resonance technique (TRT) has been developed as a convenient formalization tool for discontinuities of increased complexity in planar and quasi-planar configuration such as stripline and slotline [1]. The idea of analysis technique of similar slotline structures is described in the work of Sorrentino, Itoh [2] where the field on discontinuity in a slotline is expressed through eigenwaves of a complex cross-section waveguide. Thus the boundary problem for eigenwaves of the waveguide in the area with rectangular coordinate borders can be solved by classical projection method.
{"title":"Analysis of H-slot resonators in microstrip line ground plane","authors":"Y. Rassokhina, V. Krizhanovski","doi":"10.1109/MSMW.2010.5546130","DOIUrl":"https://doi.org/10.1109/MSMW.2010.5546130","url":null,"abstract":"The strict generalized formulation of the transverse resonance technique (TRT) has been developed as a convenient formalization tool for discontinuities of increased complexity in planar and quasi-planar configuration such as stripline and slotline [1]. The idea of analysis technique of similar slotline structures is described in the work of Sorrentino, Itoh [2] where the field on discontinuity in a slotline is expressed through eigenwaves of a complex cross-section waveguide. Thus the boundary problem for eigenwaves of the waveguide in the area with rectangular coordinate borders can be solved by classical projection method.","PeriodicalId":129834,"journal":{"name":"2010 INTERNATIONAL KHARKOV SYMPOSIUM ON PHYSICS AND ENGINEERING OF MICROWAVES, MILLIMETER AND SUBMILLIMETER WAVES","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122268579","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-21DOI: 10.1109/MSMW.2010.5546052
M. Orda-Zhigulina
Non-linear impedance is very important parameter for self-sustained oscillation system. When analyzing the coefficient that multiplied by first derivative of the laser modulation system it is possible to get information about the non-linear laser diode impedance. But information about non-liner laser diode parameters could be in the regenerative force also. It means it is very important to analyze the non-liner effects for this oscillation system.
{"title":"Amplitude-frequency conversion of semiconductor laser microwave modulation","authors":"M. Orda-Zhigulina","doi":"10.1109/MSMW.2010.5546052","DOIUrl":"https://doi.org/10.1109/MSMW.2010.5546052","url":null,"abstract":"Non-linear impedance is very important parameter for self-sustained oscillation system. When analyzing the coefficient that multiplied by first derivative of the laser modulation system it is possible to get information about the non-linear laser diode impedance. But information about non-liner laser diode parameters could be in the regenerative force also. It means it is very important to analyze the non-liner effects for this oscillation system.","PeriodicalId":129834,"journal":{"name":"2010 INTERNATIONAL KHARKOV SYMPOSIUM ON PHYSICS AND ENGINEERING OF MICROWAVES, MILLIMETER AND SUBMILLIMETER WAVES","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121719163","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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