Pub Date : 2023-06-01DOI: 10.1109/mpel.2023.3275312
A. Bindra
{"title":"APEC 2023 Returns to Orlando to Display Latest Advances in WBG and Si Devices","authors":"A. Bindra","doi":"10.1109/mpel.2023.3275312","DOIUrl":"https://doi.org/10.1109/mpel.2023.3275312","url":null,"abstract":"","PeriodicalId":13049,"journal":{"name":"IEEE Power Electronics Magazine","volume":" ","pages":""},"PeriodicalIF":2.3,"publicationDate":"2023-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49573292","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-06-01DOI: 10.1109/mpel.2023.3276295
Jane Celusak
{"title":"IEEE PELS EBL Chair Presents Democratization of Energy at the UN Global Solutions Summit 2023","authors":"Jane Celusak","doi":"10.1109/mpel.2023.3276295","DOIUrl":"https://doi.org/10.1109/mpel.2023.3276295","url":null,"abstract":"","PeriodicalId":13049,"journal":{"name":"IEEE Power Electronics Magazine","volume":" ","pages":""},"PeriodicalIF":2.3,"publicationDate":"2023-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"44393601","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-06-01DOI: 10.1109/mpel.2023.3269987
S. W. Butler, Kristen Parrish
The World Semiconductor Trade Statistics (WSTS) is a non-profit organization that collects shipments data directly from its 42 semiconductor company members, and provides market analysis and reports back to its membership. Integrated device manufacturers (IDM) and fabless semiconductor companies who design and market semiconductors, either discrete or integrated circuits, are eligible for membership with WSTS. Semiconductor contract manufacturers, such as a foundry, may obtain a subscription for reports directly with WSTS. Non-semiconductor manufacturers can subscribe for reports through direct subscription with one of their 5 regional distribution channels provided by regional semiconductor industry associations. For example, the Semiconductor Industry Association (SIA), based in the United States, is the distribution channel for the Americas. The SIA also utilizes statistics provided by WSTS in some of their public reports and news releases [1].
{"title":"WSTS Introduces New Category: WBG Discrete Power Products [Industry Pulse]","authors":"S. W. Butler, Kristen Parrish","doi":"10.1109/mpel.2023.3269987","DOIUrl":"https://doi.org/10.1109/mpel.2023.3269987","url":null,"abstract":"<fig position=\"float\" orientation=\"portrait\"> <graphic position=\"float\" orientation=\"portrait\" xlink:href=\"butle-3269987.tif\"/> </fig> <fig position=\"float\" orientation=\"portrait\"> <graphic position=\"float\" orientation=\"portrait\" xlink:href=\"parri-3269987.tif\"/> </fig>The World Semiconductor Trade Statistics (WSTS) is a non-profit organization that collects shipments data directly from its 42 semiconductor company members, and provides market analysis and reports back to its membership. Integrated device manufacturers (IDM) and fabless semiconductor companies who design and market semiconductors, either discrete or integrated circuits, are eligible for membership with WSTS. Semiconductor contract manufacturers, such as a foundry, may obtain a subscription for reports directly with WSTS. Non-semiconductor manufacturers can subscribe for reports through direct subscription with one of their 5 regional distribution channels provided by regional semiconductor industry associations. For example, the Semiconductor Industry Association (SIA), based in the United States, is the distribution channel for the Americas. The SIA also utilizes statistics provided by WSTS in some of their public reports and news releases <xref ref-type=\"bibr\" rid=\"ref1\">[1]</xref>.","PeriodicalId":13049,"journal":{"name":"IEEE Power Electronics Magazine","volume":"10 1","pages":"88-91"},"PeriodicalIF":2.3,"publicationDate":"2023-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"46187904","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-06-01DOI: 10.1109/mpel.2023.3275295
K. Deepa
{"title":"Insights into IEEE PELS","authors":"K. Deepa","doi":"10.1109/mpel.2023.3275295","DOIUrl":"https://doi.org/10.1109/mpel.2023.3275295","url":null,"abstract":"","PeriodicalId":13049,"journal":{"name":"IEEE Power Electronics Magazine","volume":" ","pages":""},"PeriodicalIF":2.3,"publicationDate":"2023-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"47069187","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-06-01DOI: 10.1109/mpel.2023.3273890
A. Bindra
{"title":"Enhancing the Reliability of Electric Grid [From the Editor]","authors":"A. Bindra","doi":"10.1109/mpel.2023.3273890","DOIUrl":"https://doi.org/10.1109/mpel.2023.3273890","url":null,"abstract":"","PeriodicalId":13049,"journal":{"name":"IEEE Power Electronics Magazine","volume":" ","pages":""},"PeriodicalIF":2.3,"publicationDate":"2023-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"43265417","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-06-01DOI: 10.1109/MPEL.2023.3271619
L. Casey, J. Enslin, G. Joós, Mark Siira, B. Borowy, Chase Sun
The evolution of advanced inverter-based resources (IBR) is closely coupled with the growth of their applications in electric power networks. Most applications of inverters during this transition were grid-following (GFL) inverters. As IBRs gradually displaced rotating synchronous generators in electric power grid applications, issues such as the behavior of low-inertia grids, local needs for voltage support, and ride-though requirements led to the first interconnection requirements. The initial DER standard, IEEE Std 1547-2003, had to be adapted to the new context and led to the revised standard, IEEE Std 1547–2018 and later the IEEE Std 2800–2022 for transmission IBR systems. In this article, the various inverter operating modes and functions of modern inverters are described. A focus on the comparison of GFL and grid-forming (GFM) inverters based on a more comprehensive white paper developed by the SCC-21 Task Force on Advanced Inverters supporting industry standards is needed in the next few years to reduce system-wide IBR events on the electric system.
{"title":"Advanced Inverter Interactions With Electric Grids","authors":"L. Casey, J. Enslin, G. Joós, Mark Siira, B. Borowy, Chase Sun","doi":"10.1109/MPEL.2023.3271619","DOIUrl":"https://doi.org/10.1109/MPEL.2023.3271619","url":null,"abstract":"The evolution of advanced inverter-based resources (IBR) is closely coupled with the growth of their applications in electric power networks. Most applications of inverters during this transition were grid-following (GFL) inverters. As IBRs gradually displaced rotating synchronous generators in electric power grid applications, issues such as the behavior of low-inertia grids, local needs for voltage support, and ride-though requirements led to the first interconnection requirements. The initial DER standard, IEEE Std 1547-2003, had to be adapted to the new context and led to the revised standard, IEEE Std 1547–2018 and later the IEEE Std 2800–2022 for transmission IBR systems. In this article, the various inverter operating modes and functions of modern inverters are described. A focus on the comparison of GFL and grid-forming (GFM) inverters based on a more comprehensive white paper developed by the SCC-21 Task Force on Advanced Inverters supporting industry standards is needed in the next few years to reduce system-wide IBR events on the electric system.","PeriodicalId":13049,"journal":{"name":"IEEE Power Electronics Magazine","volume":"10 1","pages":"20-27"},"PeriodicalIF":2.3,"publicationDate":"2023-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"41667623","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-06-01DOI: 10.1109/mpel.2023.3273888
A. Bindra
{"title":"ECCE: First Ever All Women Keynotes [Society News]","authors":"A. Bindra","doi":"10.1109/mpel.2023.3273888","DOIUrl":"https://doi.org/10.1109/mpel.2023.3273888","url":null,"abstract":"","PeriodicalId":13049,"journal":{"name":"IEEE Power Electronics Magazine","volume":" ","pages":""},"PeriodicalIF":2.3,"publicationDate":"2023-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"44212903","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-06-01DOI: 10.1109/MPEL.2023.3271621
Masoud Farhadi, B. Vankayalapati, B. Akin
The past decade has witnessed increasing migration from silicon (Si) to silicon carbide (SiC) in power electronics applications. This is due to the unique advantages of SiC over Si counterparts, like higher breakdown field, higher band gap, and higher thermal conductivity [1], [2]. Therefore, SiC devices can operate at faster switching frequencies, higher power density, and with exceptional thermal performance. However, as this technology progressively becomes mature, questions still arise regarding its long-term reliability. These questions can be answered proactively using accelerated lifetime tests (ALTs). ALTs accelerate the aging mechanisms by amplifying the thermal and electrical stresses. The data from ALTs serve a crucial function for evaluating the sustained reliability of SiC MOSFETs through assessment of their lifespan, identification of breakdown causes, and continuous monitoring of their performance. This article introduces an ac power cycling test setup for SiC MOSFETs and discusses the correlation of aging precursors to different failure mechanisms. Also, the study identifies and presents patterns of common precursor shifts.
{"title":"Reliability Evaluation of SiC MOSFETs Under Realistic Power Cycling Tests","authors":"Masoud Farhadi, B. Vankayalapati, B. Akin","doi":"10.1109/MPEL.2023.3271621","DOIUrl":"https://doi.org/10.1109/MPEL.2023.3271621","url":null,"abstract":"The past decade has witnessed increasing migration from silicon (Si) to silicon carbide (SiC) in power electronics applications. This is due to the unique advantages of SiC over Si counterparts, like higher breakdown field, higher band gap, and higher thermal conductivity [1], [2]. Therefore, SiC devices can operate at faster switching frequencies, higher power density, and with exceptional thermal performance. However, as this technology progressively becomes mature, questions still arise regarding its long-term reliability. These questions can be answered proactively using accelerated lifetime tests (ALTs). ALTs accelerate the aging mechanisms by amplifying the thermal and electrical stresses. The data from ALTs serve a crucial function for evaluating the sustained reliability of SiC MOSFETs through assessment of their lifespan, identification of breakdown causes, and continuous monitoring of their performance. This article introduces an ac power cycling test setup for SiC MOSFETs and discusses the correlation of aging precursors to different failure mechanisms. Also, the study identifies and presents patterns of common precursor shifts.","PeriodicalId":13049,"journal":{"name":"IEEE Power Electronics Magazine","volume":"10 1","pages":"49-56"},"PeriodicalIF":2.3,"publicationDate":"2023-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"44285041","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-06-01DOI: 10.1109/mpel.2023.3279176
{"title":"IEEE PELS Day 2023","authors":"","doi":"10.1109/mpel.2023.3279176","DOIUrl":"https://doi.org/10.1109/mpel.2023.3279176","url":null,"abstract":"","PeriodicalId":13049,"journal":{"name":"IEEE Power Electronics Magazine","volume":" ","pages":""},"PeriodicalIF":2.3,"publicationDate":"2023-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"46449522","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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