Pub Date : 1999-09-13DOI: 10.1109/RADECS.1999.858654
N. Haddad, R. Brown, T. Cronauer, H. Phan
A high performance radiation hardened 32-bit RISC microprocessor based upon a commercial single chip CPU has been developed. This paper presents the features of this radiation hardened microprocessor, the methods used to radiation harden this device, the results of radiation testing, and shows that the RAD6000 is well-suited for the vast majority of space applications.
{"title":"Radiation hardened COTS-based 32-bit microprocessor","authors":"N. Haddad, R. Brown, T. Cronauer, H. Phan","doi":"10.1109/RADECS.1999.858654","DOIUrl":"https://doi.org/10.1109/RADECS.1999.858654","url":null,"abstract":"A high performance radiation hardened 32-bit RISC microprocessor based upon a commercial single chip CPU has been developed. This paper presents the features of this radiation hardened microprocessor, the methods used to radiation harden this device, the results of radiation testing, and shows that the RAD6000 is well-suited for the vast majority of space applications.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126682922","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-09-13DOI: 10.1109/RADECS.1999.858542
L. Varga, E. Horvath, D. Haslip
This work examines an electrostatic charging/discharging cycle of a populated circuit board inside an equipment housing of a satellite at GEO. Component potentials and electric field strengths are examined before and after a structure ground discharge event. Field reversal after the discharge suggests that favourable conditions exist for charge dissipation from the internal dielectrics at this point in time. Electric field strength dependent, this can be either spontaneous or drift related. This work was realized using a tool of two components. The charging cycle is calculated using a modified ITS-ACCEPT code. The resulting charge distribution is used as input to a 3D Poisson equation solver.
{"title":"Modeling of discharge-triggered electric field redistribution on the interior components of a satellite","authors":"L. Varga, E. Horvath, D. Haslip","doi":"10.1109/RADECS.1999.858542","DOIUrl":"https://doi.org/10.1109/RADECS.1999.858542","url":null,"abstract":"This work examines an electrostatic charging/discharging cycle of a populated circuit board inside an equipment housing of a satellite at GEO. Component potentials and electric field strengths are examined before and after a structure ground discharge event. Field reversal after the discharge suggests that favourable conditions exist for charge dissipation from the internal dielectrics at this point in time. Electric field strength dependent, this can be either spontaneous or drift related. This work was realized using a tool of two components. The charging cycle is calculated using a modified ITS-ACCEPT code. The resulting charge distribution is used as input to a 3D Poisson equation solver.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128439121","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-09-13DOI: 10.1109/RADECS.1999.858647
S. Buchner, A. B. Campbell, T. Meehan, K. A. Clark, Dale McMorrow, C. Dyer, C. Sanderson, C. Comber, S. Kuboyama
Multiple-bit upsets were observed in two types of memories operating in the radiation environment of space. They have been categorized according to their orbital location, amount of shielding and upset multiplicity. The mechanisms responsible have been identified from ground testing of identical memories using both energetic ions and pulsed laser light. With the aid of bit-maps (generated with the pulsed laser) multiple-bit upsets could, in most cases, be attributed to one of three mechanisms, i.e., charge diffusion away from an ion strike, an ion strike to control circuitry, and an ion track intersecting a number of memory cells. Heavy-ion strikes to peripheral circuits on the memory chip generated multiple-bit upsets involving as many as twenty-one cells. Proton-induced multiple-bit upset rates have been calculated for the spacecraft orbit, and the results show good agreement with measured rates.
{"title":"Investigation of single-ion multiple-bit upsets in memories on board a space experiment","authors":"S. Buchner, A. B. Campbell, T. Meehan, K. A. Clark, Dale McMorrow, C. Dyer, C. Sanderson, C. Comber, S. Kuboyama","doi":"10.1109/RADECS.1999.858647","DOIUrl":"https://doi.org/10.1109/RADECS.1999.858647","url":null,"abstract":"Multiple-bit upsets were observed in two types of memories operating in the radiation environment of space. They have been categorized according to their orbital location, amount of shielding and upset multiplicity. The mechanisms responsible have been identified from ground testing of identical memories using both energetic ions and pulsed laser light. With the aid of bit-maps (generated with the pulsed laser) multiple-bit upsets could, in most cases, be attributed to one of three mechanisms, i.e., charge diffusion away from an ion strike, an ion strike to control circuitry, and an ion track intersecting a number of memory cells. Heavy-ion strikes to peripheral circuits on the memory chip generated multiple-bit upsets involving as many as twenty-one cells. Proton-induced multiple-bit upset rates have been calculated for the spacecraft orbit, and the results show good agreement with measured rates.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133582258","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-09-13DOI: 10.1109/RADECS.1999.858612
D. Hamonic, J.D. Saussine, E. Feuilloley
The goal of this study is the conception of a radiation tolerant absolute optical encoder. This paper describes the design methodology and results of characterization under Co/sup 60/ radiations up to a total integrated dose of 100 kGy(Si). This hardening design can be used to produce equipments with total dose specification more than 100 kGy(Si).
{"title":"Radiation hardening methodology applied on absolute optical encoder of a total dose beyond 100 kGy","authors":"D. Hamonic, J.D. Saussine, E. Feuilloley","doi":"10.1109/RADECS.1999.858612","DOIUrl":"https://doi.org/10.1109/RADECS.1999.858612","url":null,"abstract":"The goal of this study is the conception of a radiation tolerant absolute optical encoder. This paper describes the design methodology and results of characterization under Co/sup 60/ radiations up to a total integrated dose of 100 kGy(Si). This hardening design can be used to produce equipments with total dose specification more than 100 kGy(Si).","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133965853","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-09-13DOI: 10.1109/RADECS.1999.858587
M. Ceschia, A. Paccagnella, S. Sandrin, G. Ghidini, J. Wyss, M. Lavale, O. Flament
The excess leakage current across ultra-thin dielectrics has been studied for different ionizing radiation sources. Namely, X-rays, 8 MeV electrons, and three ion beams with different LETs values have been used on large area MOS capacitors with 4-nm thick oxides. Small oxide fields were applied during irradiation, reaching 3 MV/cm at most. For ionizing radiation with relatively low LET (<10 MeV cm/sup 2//mg), only Radiation Induced Leakage Current (RILC) was observed, due to the formation of neutral defects mediating electron tunneling via a single oxide trap. For high LET values, instead, the gate leakage current could be described by an empirical relation proper of Soft Breakdown (SB) phenomena detected after electrical stress. Moreover, the typical random telegraph signal noise feature of this Radiation induced Soft Breakdown (RSB) currents was observed during and after irradiation. RSB can be attributed to conduction through a multi-defect path across the oxide, produced by the residual damage of dense ion tracks. The oxide field applied during irradiation enhances the RSB intensity, but RSB can be achieved even for irradiation at zero field, being LET the main factor leading to RSB activation. The dose dependence of both RILC and QB have been investigated, showing a quasi linear kinetics with the cumulative dose. We have also studied the effect of modifying the angle of incidence of the ion beam on the intensity of the gate leakage current.
{"title":"Low field leakage current and soft breakdown in ultra-thin gate oxides after heavy ions, electrons or X-ray irradiation","authors":"M. Ceschia, A. Paccagnella, S. Sandrin, G. Ghidini, J. Wyss, M. Lavale, O. Flament","doi":"10.1109/RADECS.1999.858587","DOIUrl":"https://doi.org/10.1109/RADECS.1999.858587","url":null,"abstract":"The excess leakage current across ultra-thin dielectrics has been studied for different ionizing radiation sources. Namely, X-rays, 8 MeV electrons, and three ion beams with different LETs values have been used on large area MOS capacitors with 4-nm thick oxides. Small oxide fields were applied during irradiation, reaching 3 MV/cm at most. For ionizing radiation with relatively low LET (<10 MeV cm/sup 2//mg), only Radiation Induced Leakage Current (RILC) was observed, due to the formation of neutral defects mediating electron tunneling via a single oxide trap. For high LET values, instead, the gate leakage current could be described by an empirical relation proper of Soft Breakdown (SB) phenomena detected after electrical stress. Moreover, the typical random telegraph signal noise feature of this Radiation induced Soft Breakdown (RSB) currents was observed during and after irradiation. RSB can be attributed to conduction through a multi-defect path across the oxide, produced by the residual damage of dense ion tracks. The oxide field applied during irradiation enhances the RSB intensity, but RSB can be achieved even for irradiation at zero field, being LET the main factor leading to RSB activation. The dose dependence of both RILC and QB have been investigated, showing a quasi linear kinetics with the cumulative dose. We have also studied the effect of modifying the angle of incidence of the ion beam on the intensity of the gate leakage current.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132599921","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-09-13DOI: 10.1109/RADECS.1999.858632
H. Henschel, O. Kohn
Optical fibres that are permanently installed in nuclear reactors (fission or fusion) or at high energy physics accelerators can accumulate considerable long-lived radiation-induced loss. Four different fibre types were irradiated up to dose values from 10/sup 3/ to 10/sup 6/ Gy and an attempt was made to reduce the residual loss /spl ges/28 h after the end of irradiation by injection of high intensity laser light (40-100 mW) of 672, 830 and 980 nm wavelength. The radiation-induced loss of undoped silica core fibres could not be reduced by photobleaching, whereas the loss of Ge-doped fibres could only be reduced after lower dose values and in the wavelength region of lowest loss increase (800-1200 nm) where it is tolerable anyhow.
{"title":"Regeneration of irradiated optical fibres by photobleaching?","authors":"H. Henschel, O. Kohn","doi":"10.1109/RADECS.1999.858632","DOIUrl":"https://doi.org/10.1109/RADECS.1999.858632","url":null,"abstract":"Optical fibres that are permanently installed in nuclear reactors (fission or fusion) or at high energy physics accelerators can accumulate considerable long-lived radiation-induced loss. Four different fibre types were irradiated up to dose values from 10/sup 3/ to 10/sup 6/ Gy and an attempt was made to reduce the residual loss /spl ges/28 h after the end of irradiation by injection of high intensity laser light (40-100 mW) of 672, 830 and 980 nm wavelength. The radiation-induced loss of undoped silica core fibres could not be reduced by photobleaching, whereas the loss of Ge-doped fibres could only be reduced after lower dose values and in the wavelength region of lowest loss increase (800-1200 nm) where it is tolerable anyhow.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122481373","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-09-13DOI: 10.1109/RADECS.1999.858552
G. Ranchoux, L. Dusseau, D. Gensanne, D. Plattard, G. Polge, F. Saigné, X. Menduina, J. C. Bessiére, J. Fesquet, J. Gasiot
The dose deposited by high energy electrons in dual in line package is measured versus depth using Optically Stimulated Luminescence films. Several conditions of irradiation are investigated. Experimental results are compared with PENELOPE radiation transport code calculations.
{"title":"Depth dose deposition measurement and radiation transport calculation in electronic packages using optically stimulated luminescence films","authors":"G. Ranchoux, L. Dusseau, D. Gensanne, D. Plattard, G. Polge, F. Saigné, X. Menduina, J. C. Bessiére, J. Fesquet, J. Gasiot","doi":"10.1109/RADECS.1999.858552","DOIUrl":"https://doi.org/10.1109/RADECS.1999.858552","url":null,"abstract":"The dose deposited by high energy electrons in dual in line package is measured versus depth using Optically Stimulated Luminescence films. Several conditions of irradiation are investigated. Experimental results are compared with PENELOPE radiation transport code calculations.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122523644","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-09-13DOI: 10.1109/RADECS.1999.858597
C. Brisset, O. Noblanc, C. Picard, F. Joffre, C. Brylinski
This study investigates the response of two MESFET 4H-SiC structures to irradiation at very high total dose levels. It demonstrates that electrically active defects created or stimulated by irradiation change the component response. A MESFET with a semi-insulating substrate exhibits better dose response than one with a buffer layer between channel and conductive substrate.
{"title":"4H-SiC MESFETs behavior after high dose irradiation","authors":"C. Brisset, O. Noblanc, C. Picard, F. Joffre, C. Brylinski","doi":"10.1109/RADECS.1999.858597","DOIUrl":"https://doi.org/10.1109/RADECS.1999.858597","url":null,"abstract":"This study investigates the response of two MESFET 4H-SiC structures to irradiation at very high total dose levels. It demonstrates that electrically active defects created or stimulated by irradiation change the component response. A MESFET with a semi-insulating substrate exhibits better dose response than one with a buffer layer between channel and conductive substrate.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122731303","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-09-13DOI: 10.1109/RADECS.1999.858593
A. Torres, O. Flament, C. Marcandella, O. Musseau, J. Leray
Charge trapping features of a power MOSFET oxide are investigated by irradiation and post irradiation methods. We determine the spectral and the spatial trap distribution in the oxide of four hardened and unhardened devices. One unhardened device seems to present a trapping behavior close to the SIMOX buried oxide one.
{"title":"Spatial and spectral oxide trap distributions in power MOSFETs","authors":"A. Torres, O. Flament, C. Marcandella, O. Musseau, J. Leray","doi":"10.1109/RADECS.1999.858593","DOIUrl":"https://doi.org/10.1109/RADECS.1999.858593","url":null,"abstract":"Charge trapping features of a power MOSFET oxide are investigated by irradiation and post irradiation methods. We determine the spectral and the spatial trap distribution in the oxide of four hardened and unhardened devices. One unhardened device seems to present a trapping behavior close to the SIMOX buried oxide one.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127265073","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-09-13DOI: 10.1109/RADECS.1999.858635
M.N. Jaafar Ali, B. Bhuva, S. Kerns, M. Maher, R. Lawrence, A. Hoffmann
The forward and reverse characteristics of an n-channel device during the saturation mode of operation are used to determine the extent of damage non-uniformity along the channel. The non-uniformity increases with the total dose. The unmatched forward and reverse characteristics will be a major problem for memory circuits for advanced technologies.
{"title":"Characterizing effects of radiation on forward and reverse saturation characteristics of n-channel devices [SRAMs]","authors":"M.N. Jaafar Ali, B. Bhuva, S. Kerns, M. Maher, R. Lawrence, A. Hoffmann","doi":"10.1109/RADECS.1999.858635","DOIUrl":"https://doi.org/10.1109/RADECS.1999.858635","url":null,"abstract":"The forward and reverse characteristics of an n-channel device during the saturation mode of operation are used to determine the extent of damage non-uniformity along the channel. The non-uniformity increases with the total dose. The unmatched forward and reverse characteristics will be a major problem for memory circuits for advanced technologies.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121752614","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：