Pub Date : 2002-11-07DOI: 10.1109/THZ.2002.1037590
D. Turchinovich, M. Walther, H. Helm, M. Koch, S. Lahmann, A. Hangleiter, P. Jepsen
Efficient THz pulse generation from optically pumped InGaN/GaN multiple quantum well structures is demonstrated. Such structures incorporate strong electric fields of opposite directions - piezoelectric fields inside the quantum wells and in the barrier. Polarized states inside the quantum well and in the barrier give different contributions to the THz pulse, depending on whether the excitation is real or virtual. If the excitation energy is slightly below the e1-h1 transition in the quantum well, two-photon absorption in the barriers is observed to give the dominant contribution to the THz generation process at high pump fluence. At low pump fluence the virtual excitation of polarized states inside the quantum well dominates.
{"title":"Terahertz pulse emission from strained GaN/GaInN quantum well structures","authors":"D. Turchinovich, M. Walther, H. Helm, M. Koch, S. Lahmann, A. Hangleiter, P. Jepsen","doi":"10.1109/THZ.2002.1037590","DOIUrl":"https://doi.org/10.1109/THZ.2002.1037590","url":null,"abstract":"Efficient THz pulse generation from optically pumped InGaN/GaN multiple quantum well structures is demonstrated. Such structures incorporate strong electric fields of opposite directions - piezoelectric fields inside the quantum wells and in the barrier. Polarized states inside the quantum well and in the barrier give different contributions to the THz pulse, depending on whether the excitation is real or virtual. If the excitation energy is slightly below the e1-h1 transition in the quantum well, two-photon absorption in the barriers is observed to give the dominant contribution to the THz generation process at high pump fluence. At low pump fluence the virtual excitation of polarized states inside the quantum well dominates.","PeriodicalId":143116,"journal":{"name":"Proceedings, IEEE Tenth International Conference on Terahertz Electronics","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122873071","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-11-07DOI: 10.1109/THZ.2002.1037610
F. Glotin, R. Prazeres, J. Ortega
The CLIO laser is working as an open users facility. Most studies up to recently were restricted to the infrared range: /spl lambda/ = 3-15 /spl mu/m (20-100 THz), rather than Terahertz. But continuous upgrade of the laser has extended the tuning range to 3-100 THz and should achieve 2-100 THz in a near future, enabling to consider CLIO as a true Terahertz radiation source. We present the actual and future performances of the facility, and evoke its application fields.
{"title":"From far-infrared to Terahertz experiments at the CLIO free-electron laser facility","authors":"F. Glotin, R. Prazeres, J. Ortega","doi":"10.1109/THZ.2002.1037610","DOIUrl":"https://doi.org/10.1109/THZ.2002.1037610","url":null,"abstract":"The CLIO laser is working as an open users facility. Most studies up to recently were restricted to the infrared range: /spl lambda/ = 3-15 /spl mu/m (20-100 THz), rather than Terahertz. But continuous upgrade of the laser has extended the tuning range to 3-100 THz and should achieve 2-100 THz in a near future, enabling to consider CLIO as a true Terahertz radiation source. We present the actual and future performances of the facility, and evoke its application fields.","PeriodicalId":143116,"journal":{"name":"Proceedings, IEEE Tenth International Conference on Terahertz Electronics","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125039497","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-11-07DOI: 10.1109/THZ.2002.1037611
M. Naftaly, R. Miles, M. R. Stone
Describes an experiment demonstrating generation of CW THz radiation from a Ti-sapphire laser. The laser was forced to oscillate on two modes by an intracavity Fabry-Perot etalon. The mode spacing was in the THz range, determined by the etalon thickness. A photoconductive antenna was used as a photomixing element to produce THz radiation, which was then detected by a Golay cell. A simple one-dimensional pattern was imaged using the setup.
{"title":"Demonstration of CW THz generation using a two-color Ti-sapphire laser containing a Fabry-Perot etalon","authors":"M. Naftaly, R. Miles, M. R. Stone","doi":"10.1109/THZ.2002.1037611","DOIUrl":"https://doi.org/10.1109/THZ.2002.1037611","url":null,"abstract":"Describes an experiment demonstrating generation of CW THz radiation from a Ti-sapphire laser. The laser was forced to oscillate on two modes by an intracavity Fabry-Perot etalon. The mode spacing was in the THz range, determined by the etalon thickness. A photoconductive antenna was used as a photomixing element to produce THz radiation, which was then detected by a Golay cell. A simple one-dimensional pattern was imaged using the setup.","PeriodicalId":143116,"journal":{"name":"Proceedings, IEEE Tenth International Conference on Terahertz Electronics","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121388725","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-11-07DOI: 10.1109/THZ.2002.1037587
F. Miyamaru, T. Kondo, T. Nagashima, M. Tani, M. Hangyo
The polarization characteristics of the THz wave transmitted through the two-dimensional metallic photonic crystal (2D-MPC) are investigated. The 2D-MPC, we used here, is a thin conductive screen perforated periodically with circular holes. We measured the polarization characteristics of the THz wave using THz time-domain spectroscopy with wire-gird polarizers. In this system, we can detect the temporal polarization behavior of the THz wave and describe them in 3D-trajectory plot. The polarization rotation of the detected THz wave is observed although the incident THz wave is linearly polarized. This indicates that the 2D-MPC acts as a wave plate for the THz wave. It is also observed that this polarization rotation of the transmitted THz wave is highly sensitive to the incident angle.
{"title":"Polarization response of two-dimensional metallic photonic crystals studied by terahertz time domain spectroscopy","authors":"F. Miyamaru, T. Kondo, T. Nagashima, M. Tani, M. Hangyo","doi":"10.1109/THZ.2002.1037587","DOIUrl":"https://doi.org/10.1109/THZ.2002.1037587","url":null,"abstract":"The polarization characteristics of the THz wave transmitted through the two-dimensional metallic photonic crystal (2D-MPC) are investigated. The 2D-MPC, we used here, is a thin conductive screen perforated periodically with circular holes. We measured the polarization characteristics of the THz wave using THz time-domain spectroscopy with wire-gird polarizers. In this system, we can detect the temporal polarization behavior of the THz wave and describe them in 3D-trajectory plot. The polarization rotation of the detected THz wave is observed although the incident THz wave is linearly polarized. This indicates that the 2D-MPC acts as a wave plate for the THz wave. It is also observed that this polarization rotation of the transmitted THz wave is highly sensitive to the incident angle.","PeriodicalId":143116,"journal":{"name":"Proceedings, IEEE Tenth International Conference on Terahertz Electronics","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116143944","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-11-07DOI: 10.1109/THZ.2002.1037592
M. Nagel, F. Richter, P. Bolívar, H. Kurz, A. Bosserhoff, R. Buttner
A THz wave based approach for the label-free characterization of genetic material is presented. Time-resolved THz spectroscopic analysis of genetic sequences (polynucleotides) demonstrate a clearly distinct complex refractive index in the THz frequency range as a function of the hybridization state (hybridized/denatured) of the analysed DNA sequences. By monitoring THz signals one can thus infer the binding state of oligo- and polynucleotides, enabling the label-free determination of the genetic composition of polynucleotides. Recent advances in the development of high sensitivity integrated THz sensors reaching femtomol detection levels and single base mutation detection capabilities are reviewed.
{"title":"Integrated THz biomolecular sensors for DNA","authors":"M. Nagel, F. Richter, P. Bolívar, H. Kurz, A. Bosserhoff, R. Buttner","doi":"10.1109/THZ.2002.1037592","DOIUrl":"https://doi.org/10.1109/THZ.2002.1037592","url":null,"abstract":"A THz wave based approach for the label-free characterization of genetic material is presented. Time-resolved THz spectroscopic analysis of genetic sequences (polynucleotides) demonstrate a clearly distinct complex refractive index in the THz frequency range as a function of the hybridization state (hybridized/denatured) of the analysed DNA sequences. By monitoring THz signals one can thus infer the binding state of oligo- and polynucleotides, enabling the label-free determination of the genetic composition of polynucleotides. Recent advances in the development of high sensitivity integrated THz sensors reaching femtomol detection levels and single base mutation detection capabilities are reviewed.","PeriodicalId":143116,"journal":{"name":"Proceedings, IEEE Tenth International Conference on Terahertz Electronics","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122626552","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-11-07DOI: 10.1109/THZ.2002.1037578
E. Peytavit, S. Arscott, D. Lippens, G. Mouret, P. Masselin, S. Matton, R. Bocquet, J. Lampin, L. Desplanque, F. Mollot
We report on the development of an-ultra-broad band photoconductive detector, based on low-temperature-grown GaAs, vertically-integrated with terahertz spiral antennas. Velocity overshoot was expected in the photo-response facing the dramatic decrease in conversion efficiency due to a very short carrier lifetime. Photomixing experiments with two optical 0.8 /spl mu/m laser beating shows a 3-dB bandwidth of 700 GHz with radiation power at terahertz frequency of 0.1 /spl mu/W under moderate optical pumping and bias voltages. Preliminary results are also reported at long wavelengths taking advantage of the sub-gap absorption tail for non-annealed samples.
我们报道了一种基于低温生长GaAs的超宽带光导探测器的开发，该探测器与太赫兹螺旋天线垂直集成。由于载流子寿命非常短，导致转换效率急剧下降，因此光响应中的速度超调是预期的。在适当的光泵浦和偏置电压下，两个0.8 /spl μ l /m光脉冲的光混合实验表明，在700 GHz的3 db带宽下，太赫兹频率下的辐射功率为0.1 /spl μ l /W。在非退火样品中，利用亚间隙吸收尾在长波长的初步结果也被报道。
{"title":"An ultra-wide bandwidth photomixer with down conversion at terahertz frequency","authors":"E. Peytavit, S. Arscott, D. Lippens, G. Mouret, P. Masselin, S. Matton, R. Bocquet, J. Lampin, L. Desplanque, F. Mollot","doi":"10.1109/THZ.2002.1037578","DOIUrl":"https://doi.org/10.1109/THZ.2002.1037578","url":null,"abstract":"We report on the development of an-ultra-broad band photoconductive detector, based on low-temperature-grown GaAs, vertically-integrated with terahertz spiral antennas. Velocity overshoot was expected in the photo-response facing the dramatic decrease in conversion efficiency due to a very short carrier lifetime. Photomixing experiments with two optical 0.8 /spl mu/m laser beating shows a 3-dB bandwidth of 700 GHz with radiation power at terahertz frequency of 0.1 /spl mu/W under moderate optical pumping and bias voltages. Preliminary results are also reported at long wavelengths taking advantage of the sub-gap absorption tail for non-annealed samples.","PeriodicalId":143116,"journal":{"name":"Proceedings, IEEE Tenth International Conference on Terahertz Electronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125455601","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-11-07DOI: 10.1109/THZ.2002.1037575
R. Kelsall, Z. Ikonić, P. Harrison, S. Lynch, R. Bates, D. Paul, D. Norris, S. Liew, A. Cullis, D. Robbins, P. Murzyn, C. Pidgeon, D. D Arnone
Terahertz electroluminescence due to light hole-heavy hole intersubband transitions in p-type Si/SiGe quantum cascade structures has been observed in both surface-normal and edge emission geometries. THz output powers of up to 50 nW have been observed for surface emission from 100 period Si/sub 0.76/Ge/sub 0.24//Si heterostructures grown on a Si/sub 0.8/Ge/sub 0.2/ relaxed buffer or 'virtual substrate'.
{"title":"Terahertz intersubband emission from silicon-germanium quantum cascades","authors":"R. Kelsall, Z. Ikonić, P. Harrison, S. Lynch, R. Bates, D. Paul, D. Norris, S. Liew, A. Cullis, D. Robbins, P. Murzyn, C. Pidgeon, D. D Arnone","doi":"10.1109/THZ.2002.1037575","DOIUrl":"https://doi.org/10.1109/THZ.2002.1037575","url":null,"abstract":"Terahertz electroluminescence due to light hole-heavy hole intersubband transitions in p-type Si/SiGe quantum cascade structures has been observed in both surface-normal and edge emission geometries. THz output powers of up to 50 nW have been observed for surface emission from 100 period Si/sub 0.76/Ge/sub 0.24//Si heterostructures grown on a Si/sub 0.8/Ge/sub 0.2/ relaxed buffer or 'virtual substrate'.","PeriodicalId":143116,"journal":{"name":"Proceedings, IEEE Tenth International Conference on Terahertz Electronics","volume":"78 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121890136","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-11-07DOI: 10.1109/THZ.2002.1037581
M. Herrmann, M. Tani, K. Sakai, M. Watanabe
We have constructed a small and cheap, yet efficient electronic circuit for reading out THz signals from photoconductive antennas. An 8-channel version of this circuit has been used for THz imaging by simultaneously recording sets of 8 time-domain THz waveforms with an array of 8 photoconductive antennas.
{"title":"Multi-channel signal recording with photoconductive antennas for THz imaging","authors":"M. Herrmann, M. Tani, K. Sakai, M. Watanabe","doi":"10.1109/THZ.2002.1037581","DOIUrl":"https://doi.org/10.1109/THZ.2002.1037581","url":null,"abstract":"We have constructed a small and cheap, yet efficient electronic circuit for reading out THz signals from photoconductive antennas. An 8-channel version of this circuit has been used for THz imaging by simultaneously recording sets of 8 time-domain THz waveforms with an array of 8 photoconductive antennas.","PeriodicalId":143116,"journal":{"name":"Proceedings, IEEE Tenth International Conference on Terahertz Electronics","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114296919","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-11-07DOI: 10.1109/THZ.2002.1037582
T. Klaassen, J. H. Blok, J. Hovenier, G. Jakob, D. Rosenthal, K. Wildeman
Absorbing coatings for the HIFI and PACS spectrometers aboard the Herschel platform have been developed and optically characterized. Using radiation from an optically pumped far-infrared laser at wavelengths in the 90-900 /spl mu/m range, the specular as well as the diffuse reflection - described by the bi-directional reflection distribution function - have been determined. The influence of polarization has been addressed too. Moreover, the absorption of non-absorbing diffusely reflecting surfaces, to be used for integrating spheres, has been determined using a calorimetric method.
{"title":"Absorbing coatings and diffuse reflectors for the Herschel platform sub-millimeter spectrometers HIFI and PACS","authors":"T. Klaassen, J. H. Blok, J. Hovenier, G. Jakob, D. Rosenthal, K. Wildeman","doi":"10.1109/THZ.2002.1037582","DOIUrl":"https://doi.org/10.1109/THZ.2002.1037582","url":null,"abstract":"Absorbing coatings for the HIFI and PACS spectrometers aboard the Herschel platform have been developed and optically characterized. Using radiation from an optically pumped far-infrared laser at wavelengths in the 90-900 /spl mu/m range, the specular as well as the diffuse reflection - described by the bi-directional reflection distribution function - have been determined. The influence of polarization has been addressed too. Moreover, the absorption of non-absorbing diffusely reflecting surfaces, to be used for integrating spheres, has been determined using a calorimetric method.","PeriodicalId":143116,"journal":{"name":"Proceedings, IEEE Tenth International Conference on Terahertz Electronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131374613","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-11-07DOI: 10.1109/THZ.2002.1037576
H. Eisele
Recent advances in design and technology significantly improved the performance of low-noise InP Gunn devices in oscillators at W-band (75-110 GHz) and D-band (110-170 GHz) frequencies. More importantly, they resulted in orders of magnitude higher radio-frequency (RF) output power levels above D-band. Examples are continuous-wave RF power levels of more than 30 mW at 193 GHz, more than 3 mW at 300 GHz, and more than 1 mW at 315 GHz. The DC power requirements of these oscillators compare favorably with those of RF sources driving frequency multiplier chains to reach the same output RF power levels and frequencies. Generation of significant RF power levels from InP Gunn devices is predicted up to at least 500 GHz. A different approach to a Gunn-like device for even higher frequencies is based on a heterostructure perpendicular to a superlattice. Tunnel injection transit-time (TUNNETT) diodes are another candidate for low-noise RF sources at submillimeter-wave frequencies. Low-noise GaAs TUNNETT diodes, for example, already yielded more than 10 mW at 202 GHz, but more recent material systems such as GaN show more favorable material parameters than GaAs.
{"title":"Conventional and novel approaches to RF power generation with two-terminal devices at terahertz frequencies","authors":"H. Eisele","doi":"10.1109/THZ.2002.1037576","DOIUrl":"https://doi.org/10.1109/THZ.2002.1037576","url":null,"abstract":"Recent advances in design and technology significantly improved the performance of low-noise InP Gunn devices in oscillators at W-band (75-110 GHz) and D-band (110-170 GHz) frequencies. More importantly, they resulted in orders of magnitude higher radio-frequency (RF) output power levels above D-band. Examples are continuous-wave RF power levels of more than 30 mW at 193 GHz, more than 3 mW at 300 GHz, and more than 1 mW at 315 GHz. The DC power requirements of these oscillators compare favorably with those of RF sources driving frequency multiplier chains to reach the same output RF power levels and frequencies. Generation of significant RF power levels from InP Gunn devices is predicted up to at least 500 GHz. A different approach to a Gunn-like device for even higher frequencies is based on a heterostructure perpendicular to a superlattice. Tunnel injection transit-time (TUNNETT) diodes are another candidate for low-noise RF sources at submillimeter-wave frequencies. Low-noise GaAs TUNNETT diodes, for example, already yielded more than 10 mW at 202 GHz, but more recent material systems such as GaN show more favorable material parameters than GaAs.","PeriodicalId":143116,"journal":{"name":"Proceedings, IEEE Tenth International Conference on Terahertz Electronics","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127305706","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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