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Journal of Advanced Dielectrics最新文献

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Microwave absorption properties of bismuth ferrite-based ceramics 铁氧体铋基陶瓷的微波吸收特性
IF 3.1 3区 物理与天体物理 Q2 Engineering Pub Date : 2024-02-23 DOI: 10.1142/s2010135x24500036
P. Astafev, D.I. Zorin, J.A. Reizenkind, A. Lerer, K. Andryushin, A. Pavelko, L.A. Reznichenko
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引用次数: 0
Microstructure Evolution from Silicon Core to Surface in Electronic-grade Polycrystalline Silicon 电子级多晶硅从硅芯到表面的微观结构演变
IF 3.1 3区 物理与天体物理 Q2 Engineering Pub Date : 2024-02-23 DOI: 10.1142/s2010135x2440006x
Jinyue Peng, Yuxuan Yang, Yang Zhang, Xinlu Xue, Bochen Lu, Rong Qin, Haijun Wu
{"title":"Microstructure Evolution from Silicon Core to Surface in Electronic-grade Polycrystalline Silicon","authors":"Jinyue Peng, Yuxuan Yang, Yang Zhang, Xinlu Xue, Bochen Lu, Rong Qin, Haijun Wu","doi":"10.1142/s2010135x2440006x","DOIUrl":"https://doi.org/10.1142/s2010135x2440006x","url":null,"abstract":"","PeriodicalId":14871,"journal":{"name":"Journal of Advanced Dielectrics","volume":null,"pages":null},"PeriodicalIF":3.1,"publicationDate":"2024-02-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140438434","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Synthesis, X-ray diffraction and dielectric studies of the ceramic samples (1 − x)BaTiO3 ⋅ xPbFe2/3W1/3O3 (0 ≤ x ≤ 1)system 陶瓷样品 (1 - x)BaTiO3 ⋅ xPbFe2/3W1/3O3 (0 ≤ x ≤ 1) 系统的合成、X 射线衍射和介电研究
IF 3.1 3区 物理与天体物理 Q2 Engineering Pub Date : 2024-02-23 DOI: 10.1142/s2010135x24500024
D. Y. Fedulov, K. Kamentsev, A. A. Bush, V. I. Kozlov
{"title":"Synthesis, X-ray diffraction and dielectric studies of the ceramic samples (1 − x)BaTiO3 ⋅ xPbFe2/3W1/3O3 (0 ≤ x ≤ 1)system","authors":"D. Y. Fedulov, K. Kamentsev, A. A. Bush, V. I. Kozlov","doi":"10.1142/s2010135x24500024","DOIUrl":"https://doi.org/10.1142/s2010135x24500024","url":null,"abstract":"","PeriodicalId":14871,"journal":{"name":"Journal of Advanced Dielectrics","volume":null,"pages":null},"PeriodicalIF":3.1,"publicationDate":"2024-02-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140437654","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Novel high-performance 2-1-2 composites with two ferroelectric components causing a variable anisotropy of figures of merit 具有两种铁电成分的新型高性能 2-1-2 复合材料,可产生各向异性的性能指标
IF 3.1 3区 物理与天体物理 Q2 Engineering Pub Date : 2024-02-02 DOI: 10.1142/s2010135x24500012
V. Topolov, Sofya A. Kovrigina
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引用次数: 0
Novel high-performance 2-1-2 composites with two ferroelectric components causing a variable anisotropy of figures of merit 具有两种铁电成分的新型高性能 2-1-2 复合材料,可产生各向异性的性能指标
IF 3.1 3区 物理与天体物理 Q2 Engineering Pub Date : 2024-02-02 DOI: 10.1142/s2010135x24500012
V. Topolov, Sofya A. Kovrigina
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引用次数: 0
Microstructure of Electronic-Grade Polycrystalline Silicon Core-Matrix Interface 电子级多晶硅芯-矩阵界面的微观结构
IF 3.1 3区 物理与天体物理 Q2 Engineering Pub Date : 2024-01-26 DOI: 10.1142/s2010135x24400058
Bochen Lu, Yuxuan Yang, Yang Zhang, Rong Qin, Xinlu Xue, Jinyue Peng, Haijun Wu
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引用次数: 0
Simulation and structural design of 2–2 PIMNT/epoxy piezoelectric composites 2-2 PIMNT/epoxy 压电复合材料的模拟和结构设计
IF 3.1 3区 物理与天体物理 Q2 Engineering Pub Date : 2024-01-23 DOI: 10.1142/s2010135x23500315
Wanggen Chen, Fei Wen, Yao Wan, Lili Li, Yang Li, Yu Zhou
Piezoelectric materials are commonly used in transducers to convert electromechanical signals due to their energy conversion characteristics. We designed a PIMNT/epoxy 2–2 composite to take full advantage of the excellent beam-mode piezoelectric and acoustic features of PIMNT single crystals. Following the approach used for piezoelectric ceramic composites, we selected PIMNT piezoelectric single crystal and EPO-TEK301-2 epoxy resin for the composite, and combined finite element analysis with experimental preparation. We prepared, tested and analyzed 2–2 piezoelectric single crystal composites with varying volume fractions, which showed high electromechanical coupling properties ([Formula: see text]%) and low acoustic impedance ([Formula: see text][Formula: see text]MRayl). These encouraging findings suggest the possibility of devising high-performance ultrasonic transducers utilizing the PIMNT/epoxy 2–2 composite.
压电材料因其能量转换特性而常用于转换机电信号的传感器中。我们设计了一种 PIMNT/epoxy 2-2 复合材料,以充分利用 PIMNT 单晶优异的束模压电和声学特性。按照压电陶瓷复合材料的方法,我们选择了 PIMNT 压电单晶和 EPO-TEK301-2 环氧树脂作为复合材料,并将有限元分析与实验制备相结合。我们制备、测试并分析了 2-2 种不同体积分数的压电单晶复合材料,结果表明这些复合材料具有较高的机电耦合性能([计算公式:见正文]%)和较低的声阻抗([计算公式:见正文][计算公式:见正文]MRayl)。这些令人鼓舞的发现表明,利用 PIMNT/epoxy 2-2 复合材料设计高性能超声波传感器是有可能的。
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引用次数: 0
Effects of interfacial buffering layer on imprint and domain switching dynamics in Pb(Zr,Ti)O3 thin-film heterostructures 界面缓冲层对 Pb(Zr,Ti)O3 薄膜异质结构中印记和畴切换动力学的影响
IF 3.1 3区 物理与天体物理 Q2 Engineering Pub Date : 2024-01-18 DOI: 10.1142/s2010135x23400106
Lingzhi Lu, Chunyan Zheng, Weijie Zheng, Chenyu Dong, Yuhao Yue, Yawen Xu, Zheng Wen
Interfacial engineering is important for ferroelectric thin-film heterostructures because of the modulation of boundary conditions of the spontaneous polarizations and their switching behaviors, which are essential for ferroelectric electronics. In this work, we study the effects of interfacial buffering layer, 5-nm-thick SrTiO3 (STO), on the imprint and domain switching of epitaxial Pt/Pb(Zr,Ti)O3/SrRuO3 (SRO) thin-film heterostructures and capacitors. By buffering the ultrathin SrTiO3 layer at the Pb(Zr,Ti)O3 surface, the imprint effect can be dramatically alleviated as observed in the piezoresponse force microscopy (PFM)-measured domain structures and polarization–electric field hysteresis loops in thin-film capacitors. However, when the SrTiO3 layer is buffered at the Pb(Zr,Ti)O3/SrRuO3 interface, the imprint effect is slightly increased. These phenomena are explained based on the band alignments among the Pt and SrRuO3 electrodes and the Pb(Zr,Ti)O3 layer associated with the existence of oxygen vacancies in the SrTiO3 layer. With the reduction of imprint effect, the domain switching dynamics are also improved in the SrTiO3-buffered Pb(Zr,Ti)O3 capacitor, in which the switching activation field is decreased by about 45.3% in comparison with that of the pristine capacitor. These results facilitate the design and optimization of ferroelectric devices with the improvements in domain configurations, switching behaviors and band alignments.
界面工程对于铁电薄膜异质结构非常重要,因为它可以调节自发极化的边界条件及其开关行为,而这对于铁电电子器件来说是必不可少的。在这项工作中,我们研究了界面缓冲层(5 nm 厚的 SrTiO3 (STO))对外延 Pt/Pb(Zr,Ti)O3/SrRuO3(SRO)薄膜异质结构和电容器的印记和域切换的影响。通过缓冲 Pt/Pb(Zr,Ti)O3 表面的超薄 SrTiO3 层,薄膜电容器中的压电响应力显微镜(PFM)测量到的畴结构和极化-电场磁滞环可以显著减轻印记效应。然而,当在 Pb(Zr,Ti)O3/SrRuO3 界面缓冲 SrTiO3 层时,印记效应会略有增加。这些现象可以根据铂和 SrRuO3 电极与 Pb(Zr,Ti)O3 层之间的带排列以及 SrTiO3 层中存在的氧空位来解释。随着印记效应的减弱,SrTiO3 缓冲 Pb(Zr,Ti)O3 电容器的畴切换动力学也得到了改善,其中切换激活场与原始电容器相比降低了约 45.3%。这些结果有助于设计和优化铁电器件,改善畴构型、开关行为和带排列。
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引用次数: 0
Microstructure of Nd:YAG transparent dielectric ceramics with ultra-high quality factor 具有超高品质因数的 Nd:YAG 透明介电陶瓷的微观结构
IF 3.1 3区 物理与天体物理 Q2 Engineering Pub Date : 2024-01-05 DOI: 10.1142/s2010135x24400010
Xiao Li, Jun Yin, S. Yu, Xi Zhang, Yuanming Lai
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引用次数: 0
Progress in sintering technology of transparent polycrystalline alumina ceramics 透明多晶氧化铝陶瓷烧结技术的进展
IF 3.1 3区 物理与天体物理 Q2 Engineering Pub Date : 2023-12-14 DOI: 10.1142/s2010135x23300025
Jun Yin, Xiao Li, Xi Zhang, S. Yu, Yuanming Lai
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引用次数: 0
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Journal of Advanced Dielectrics
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