Pub Date : 2014-06-03DOI: 10.1109/IWCE.2014.6865881
S. Malakooti, Y. S. Joe, E. Hedin
A defective double stranded poly(dG)-poly(dC) DNA molecule under axial mechanical strain is analyzed using a tight-binding computational model which allows calculation of the transmission and current characteristics of the system as a function of electron energy. Results show the existence of highly sensitive electron transmission behavior with respect to the on-site energy perturbations.
{"title":"The effects of molecular elongation on defective DNA electronics","authors":"S. Malakooti, Y. S. Joe, E. Hedin","doi":"10.1109/IWCE.2014.6865881","DOIUrl":"https://doi.org/10.1109/IWCE.2014.6865881","url":null,"abstract":"A defective double stranded poly(dG)-poly(dC) DNA molecule under axial mechanical strain is analyzed using a tight-binding computational model which allows calculation of the transmission and current characteristics of the system as a function of electron energy. Results show the existence of highly sensitive electron transmission behavior with respect to the on-site energy perturbations.","PeriodicalId":168149,"journal":{"name":"2014 International Workshop on Computational Electronics (IWCE)","volume":"369 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122345063","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-03DOI: 10.1109/IWCE.2014.6865867
S. Yaro, X. Oriols
In time dependent (classical or quantum) particle-based simulators, one needs an algorithm to determine when (and with which properties) electrons are injected from the reservoir into the simulation box. In this work we develop an electron injection model for 2D materials with linear-dispersion materials. The injected model is based on satisfying the required phase-space density of electrons. In particular, we discuss the differences between a garphene-based electron injection model and older models developed for parabolic-dispersion materials. The linear dispersion of graphene implies unexpected restrictions when developing the injection model.
{"title":"Electron injection model for graphene","authors":"S. Yaro, X. Oriols","doi":"10.1109/IWCE.2014.6865867","DOIUrl":"https://doi.org/10.1109/IWCE.2014.6865867","url":null,"abstract":"In time dependent (classical or quantum) particle-based simulators, one needs an algorithm to determine when (and with which properties) electrons are injected from the reservoir into the simulation box. In this work we develop an electron injection model for 2D materials with linear-dispersion materials. The injected model is based on satisfying the required phase-space density of electrons. In particular, we discuss the differences between a garphene-based electron injection model and older models developed for parabolic-dispersion materials. The linear dispersion of graphene implies unexpected restrictions when developing the injection model.","PeriodicalId":168149,"journal":{"name":"2014 International Workshop on Computational Electronics (IWCE)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133642336","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-03DOI: 10.1109/IWCE.2014.6865813
A. Gagliardi, M. Auf der Maur, F. Di Fonzo, A. Abrusci, H. Snaith, G. Divitini, C. Ducati, A. Di Carlo
In this work we present a multiscale simulation of a solid state dye sensitized solar cell including the real morphology of the active layer. In order to include the real morphology the device domain is split into two different regions: one treated using an effective material approximation and another one using the real structure of the blend. The real morphology has been measured using electron tomography to reconstruct the mesoporous TiO2. The geometry was inserted into a mesher and used to solve a drift-diffusion model using finite element method. The simulation is used to cast light over morphology effects in solid state dye solar cells.
{"title":"Multiscale simulation of solid state dye sensitized solar cells including morphology effects","authors":"A. Gagliardi, M. Auf der Maur, F. Di Fonzo, A. Abrusci, H. Snaith, G. Divitini, C. Ducati, A. Di Carlo","doi":"10.1109/IWCE.2014.6865813","DOIUrl":"https://doi.org/10.1109/IWCE.2014.6865813","url":null,"abstract":"In this work we present a multiscale simulation of a solid state dye sensitized solar cell including the real morphology of the active layer. In order to include the real morphology the device domain is split into two different regions: one treated using an effective material approximation and another one using the real structure of the blend. The real morphology has been measured using electron tomography to reconstruct the mesoporous TiO2. The geometry was inserted into a mesher and used to solve a drift-diffusion model using finite element method. The simulation is used to cast light over morphology effects in solid state dye solar cells.","PeriodicalId":168149,"journal":{"name":"2014 International Workshop on Computational Electronics (IWCE)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132519961","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-03DOI: 10.1109/IWCE.2014.6865878
P. Su, Yiming Li
Design rule is an important interface between design and manufacturing. It becomes more complex as the process advances to 16-nm and beyond. Current approaches to generate design rules are empirical shrink and lithographic simulation. However, it is time-consuming and costly to revise design rules for performance boost and yield improvement after design rules are frozen. Early performance gains in early design rule development without cost increase and yield loss will benefit semiconductor industry. In this work, we for the first time consider 16-nm bulk FinFET standard cell performance, yield, area, and layout style simultaneously to optimize design rules to meet ITRS by using geometric programming. Optical proximity correction, and electromagnetic field and circuit simulations are performed for objective function evaluation. The result achieves more than 100%-delay and 50%-yield improvement without area change by this systematic and statistical approach.
{"title":"Design optimization of 16-nm bulk FinFET technology via geometric programming","authors":"P. Su, Yiming Li","doi":"10.1109/IWCE.2014.6865878","DOIUrl":"https://doi.org/10.1109/IWCE.2014.6865878","url":null,"abstract":"Design rule is an important interface between design and manufacturing. It becomes more complex as the process advances to 16-nm and beyond. Current approaches to generate design rules are empirical shrink and lithographic simulation. However, it is time-consuming and costly to revise design rules for performance boost and yield improvement after design rules are frozen. Early performance gains in early design rule development without cost increase and yield loss will benefit semiconductor industry. In this work, we for the first time consider 16-nm bulk FinFET standard cell performance, yield, area, and layout style simultaneously to optimize design rules to meet ITRS by using geometric programming. Optical proximity correction, and electromagnetic field and circuit simulations are performed for objective function evaluation. The result achieves more than 100%-delay and 50%-yield improvement without area change by this systematic and statistical approach.","PeriodicalId":168149,"journal":{"name":"2014 International Workshop on Computational Electronics (IWCE)","volume":"118 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132535904","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-03DOI: 10.1109/IWCE.2014.6865823
Y. Niquet, V. Nguyen, F. Triozon, I. Duchemin, J. Li, O. Nier, D. Rideau
As the characteristic size of the devices is now reaching the sub-15 nm range, it has become essential to assess the effects of quantum corrections on the electrical performances. The Non-Equilibrium Green's Functions (NEGF) method is one of the most versatile frameworks for that purpose. It can deal with quantum confinement, elastic and inelastic scattering in a seamless way. Although numerically intensive, NEGF has benefited from recent advances in computational methodologies and from the increasing availability of high-performance computers. It has now reached a level of maturity where it can be applied to industrial technologies and complement semi-classical modeling.
{"title":"Modeling of FDSOI and trigate devices: What can we learn from Non-Equilibrium Green's Functions ?","authors":"Y. Niquet, V. Nguyen, F. Triozon, I. Duchemin, J. Li, O. Nier, D. Rideau","doi":"10.1109/IWCE.2014.6865823","DOIUrl":"https://doi.org/10.1109/IWCE.2014.6865823","url":null,"abstract":"As the characteristic size of the devices is now reaching the sub-15 nm range, it has become essential to assess the effects of quantum corrections on the electrical performances. The Non-Equilibrium Green's Functions (NEGF) method is one of the most versatile frameworks for that purpose. It can deal with quantum confinement, elastic and inelastic scattering in a seamless way. Although numerically intensive, NEGF has benefited from recent advances in computational methodologies and from the increasing availability of high-performance computers. It has now reached a level of maturity where it can be applied to industrial technologies and complement semi-classical modeling.","PeriodicalId":168149,"journal":{"name":"2014 International Workshop on Computational Electronics (IWCE)","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132734949","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-03DOI: 10.1109/IWCE.2014.6865842
E. Hedin, Y. S. Joe
Multiple, serially-connected nanoscale rings are analyzed using a tight-binding computational algorithm which allows calculation of the transmission and current characteristics of the system as a function of energy and external magnetic flux. Results show the role of bilateral symmetry in the system response to imposed flux, which can shift the system from metallic to semiconducting.
{"title":"Serially-connected Aharonov-Bohm rings with embedded quantum dots","authors":"E. Hedin, Y. S. Joe","doi":"10.1109/IWCE.2014.6865842","DOIUrl":"https://doi.org/10.1109/IWCE.2014.6865842","url":null,"abstract":"Multiple, serially-connected nanoscale rings are analyzed using a tight-binding computational algorithm which allows calculation of the transmission and current characteristics of the system as a function of energy and external magnetic flux. Results show the role of bilateral symmetry in the system response to imposed flux, which can shift the system from metallic to semiconducting.","PeriodicalId":168149,"journal":{"name":"2014 International Workshop on Computational Electronics (IWCE)","volume":"142 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124541961","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-03DOI: 10.1109/IWCE.2014.6865845
P. Chang, Xiaoyan Liu, L. Zeng, K. Wei, G. Du
Hole mobility in ultra-thin body (UTB) InSb-OI devices is calculated by a microscopic approach. An adaptive grid algorithm is employed to discretize 2-D k space. The accurate valence band structures are obtained via solving the 6-band k·p Schrödinger and Poisson equations self-consistently. Hole mobility is computed using the Kubo-Greenwood formalism accounting for nonpolar acoustic and optical phonons, polar optical phonons, and surface roughness scattering mechanisms.
{"title":"An adaptive grid algorithm for self-consistent k·p Schrodinger and Poisson equations in UTB InSb-based pMOSFETs","authors":"P. Chang, Xiaoyan Liu, L. Zeng, K. Wei, G. Du","doi":"10.1109/IWCE.2014.6865845","DOIUrl":"https://doi.org/10.1109/IWCE.2014.6865845","url":null,"abstract":"Hole mobility in ultra-thin body (UTB) InSb-OI devices is calculated by a microscopic approach. An adaptive grid algorithm is employed to discretize 2-D k space. The accurate valence band structures are obtained via solving the 6-band k·p Schrödinger and Poisson equations self-consistently. Hole mobility is computed using the Kubo-Greenwood formalism accounting for nonpolar acoustic and optical phonons, polar optical phonons, and surface roughness scattering mechanisms.","PeriodicalId":168149,"journal":{"name":"2014 International Workshop on Computational Electronics (IWCE)","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125710798","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-03DOI: 10.1109/IWCE.2014.6865860
A. Garcia-Rivera, E. Comesaña, A. García-Loureiro, R. Valin, A. Martinez
In this paper different roughness profiles of transparent conductive oxide (TCO) have been simulated to calibrate a thin-film hydrogenated amorphous silicon double-junction tandem solar cell (a-Si:H/a-Si:H) against the experimental data. The TCO texture was modelled using a periodic triangular profile. The width of the period was kept constant and the height is changed according to the simulated angle α. The optimum roughness for the a-Si:H/a-Si:H solar cell was obtained for α = 26°. For this angle, the current density-voltage (J-V) characteristic has a good agreement with the J-V experimental data. The optimum value of α is close to the characteristics of an Asahi U-type texture used in the manufacturing process for the TCO and it generates the maximum electron density in the intrinsic layers.
{"title":"Influence of textured interfaces in the performance of a-Si:H double-junction solar cell","authors":"A. Garcia-Rivera, E. Comesaña, A. García-Loureiro, R. Valin, A. Martinez","doi":"10.1109/IWCE.2014.6865860","DOIUrl":"https://doi.org/10.1109/IWCE.2014.6865860","url":null,"abstract":"In this paper different roughness profiles of transparent conductive oxide (TCO) have been simulated to calibrate a thin-film hydrogenated amorphous silicon double-junction tandem solar cell (a-Si:H/a-Si:H) against the experimental data. The TCO texture was modelled using a periodic triangular profile. The width of the period was kept constant and the height is changed according to the simulated angle α. The optimum roughness for the a-Si:H/a-Si:H solar cell was obtained for α = 26°. For this angle, the current density-voltage (J-V) characteristic has a good agreement with the J-V experimental data. The optimum value of α is close to the characteristics of an Asahi U-type texture used in the manufacturing process for the TCO and it generates the maximum electron density in the intrinsic layers.","PeriodicalId":168149,"journal":{"name":"2014 International Workshop on Computational Electronics (IWCE)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127254179","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-03DOI: 10.1109/IWCE.2014.6865853
M. L. Van de Put, M. Thewissen, W. Magnus, B. Sorée, J. Sellier
The Wigner-Liouville (WL) equation is well suited to describe electronic transport in semiconductor devices. In the effective mass approximation the one dimensional WL equation reads ∂/∂t f(x, p, t) + p/m ∂/∂x f(x, p, t)-1/h2 ∫ dp' W(x, p-p')f(x, p', t) = 0; (1) with the Wigner kernel given by W(x, p) = -i/2π ∫ dx' exp (-i px'/h) [V (x + x'/2)-V (x-x'/2)].(2) The Wigner kernel introduces a non-local interaction with the potential V(x), in accordance with quantum theory. Unfortunately, even for this simple interaction the mathematical form includes a highly oscillatory component (exp [-i p·x/h]) which impedes stable numerical implementation based on finite differences or finite elements.
{"title":"Spectral force approach to solve the time-dependent Wigner-Liouville equation","authors":"M. L. Van de Put, M. Thewissen, W. Magnus, B. Sorée, J. Sellier","doi":"10.1109/IWCE.2014.6865853","DOIUrl":"https://doi.org/10.1109/IWCE.2014.6865853","url":null,"abstract":"The Wigner-Liouville (WL) equation is well suited to describe electronic transport in semiconductor devices. In the effective mass approximation the one dimensional WL equation reads ∂/∂t f(x, p, t) + p/m ∂/∂x f(x, p, t)-1/h2 ∫ dp' W(x, p-p')f(x, p', t) = 0; (1) with the Wigner kernel given by W(x, p) = -i/2π ∫ dx' exp (-i px'/h) [V (x + x'/2)-V (x-x'/2)].(2) The Wigner kernel introduces a non-local interaction with the potential V(x), in accordance with quantum theory. Unfortunately, even for this simple interaction the mathematical form includes a highly oscillatory component (exp [-i p·x/h]) which impedes stable numerical implementation based on finite differences or finite elements.","PeriodicalId":168149,"journal":{"name":"2014 International Workshop on Computational Electronics (IWCE)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130524156","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-03DOI: 10.1109/IWCE.2014.6865864
J. Larroque, J. Saint-Martin, P. Dollfus
We show that with a Full-Band dispersion, the specific heat is closer to the experimental value than with an isotropic quadratic dispersion. So we use a Full-Band dispersion in the transport algorithm. A Monte Carlo algorithm has been developed to simulate phonon transport in silicon nanowire. It has been successfully used to simulate the thermal conductivity.
{"title":"Phonon transport in silicon nanowires using a Full-Band Monte Carlo approach","authors":"J. Larroque, J. Saint-Martin, P. Dollfus","doi":"10.1109/IWCE.2014.6865864","DOIUrl":"https://doi.org/10.1109/IWCE.2014.6865864","url":null,"abstract":"We show that with a Full-Band dispersion, the specific heat is closer to the experimental value than with an isotropic quadratic dispersion. So we use a Full-Band dispersion in the transport algorithm. A Monte Carlo algorithm has been developed to simulate phonon transport in silicon nanowire. It has been successfully used to simulate the thermal conductivity.","PeriodicalId":168149,"journal":{"name":"2014 International Workshop on Computational Electronics (IWCE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129873871","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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