Abstract Light intensity modulation is crucial to the development of optical imaging, optical sensing, and optical switch. The light intensity modulation methods, such as changing structural parameters, external temperature, or external voltage make the control process time consuming and complex. The plasmonic polarization modulation is an effective way to modulate light intensity, but this method is limited by the excitation of surface plasmons with transverse magnetic (TM) polarized light. Herein, we report another polarization modulation method of light intensity based on guided mode resonance in the dielectric grating excited by transverse electric (TE) polarized light. The nanosystem is composed of Si grating and TiN substrate. By adjusting the polarization states of the incident light from TE to TM, the proposed nanosystem exhibits an outstanding light intensity modulation performance with a relative modulation depth of 25833%. The proposed method provides another way for modulating light intensity, which has potential applications of optical switch, optical imaging, and optical anti-counterfeiting.
{"title":"Near-Infrared Switch Effect of Polarization Modulation Induced by Guided Mode Resonance in Dielectric Grating","authors":"Kaili Kuang, Qiao Wang, Xiaomin Yuan, Yutong Yang, Han Chu, Fangjin Chang, Wei Peng","doi":"10.1088/1361-6463/ad07b1","DOIUrl":"https://doi.org/10.1088/1361-6463/ad07b1","url":null,"abstract":"Abstract Light intensity modulation is crucial to the development of optical imaging, optical sensing, and optical switch. The light intensity modulation methods, such as changing structural parameters, external temperature, or external voltage make the control process time consuming and complex. The plasmonic polarization modulation is an effective way to modulate light intensity, but this method is limited by the excitation of surface plasmons with transverse magnetic (TM) polarized light. Herein, we report another polarization modulation method of light intensity based on guided mode resonance in the dielectric grating excited by transverse electric (TE) polarized light. The nanosystem is composed of Si grating and TiN substrate. By adjusting the polarization states of the incident light from TE to TM, the proposed nanosystem exhibits an outstanding light intensity modulation performance with a relative modulation depth of 25833%. The proposed method provides another way for modulating light intensity, which has potential applications of optical switch, optical imaging, and optical anti-counterfeiting.","PeriodicalId":16833,"journal":{"name":"Journal of Physics D","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136318172","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-10-27DOI: 10.1088/1361-6463/ad056d
Kemal Özdoğan, Igor Maznichenko, Sergey Ostanin, Ersoy Şaşıoğlu, Arthur Ernst, Ingrid Mertig, Iosif Galanakis
{"title":"Corrigendum: high spin polarization in all-3d-metallic Heusler compounds: the case of Fe<sub>2</sub>CrZ and Co<sub>2</sub>CrZ (Z = Sc, Ti, V) (2019 J. Phys: D. Appl. Phys. 52 205003)","authors":"Kemal Özdoğan, Igor Maznichenko, Sergey Ostanin, Ersoy Şaşıoğlu, Arthur Ernst, Ingrid Mertig, Iosif Galanakis","doi":"10.1088/1361-6463/ad056d","DOIUrl":"https://doi.org/10.1088/1361-6463/ad056d","url":null,"abstract":"","PeriodicalId":16833,"journal":{"name":"Journal of Physics D","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136317529","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-10-27DOI: 10.1088/1361-6463/ad07af
rong wang, Wenyao Liu, ziwen pan, Wenjie Fan, Lai Liu, Enbo Xing, Yanru Liu, Jun Tang, Jun Liu
Low-threshold, narrow linewidth phonon lasers can greatly improve the detection resolution of sensors and have enormous potential for development in classical and quantum sensing fields, as well as information processing. However, its development is limited due to unfavorable factors such as the complex process, low quality factor (Q-factor), difficult tuning, and harsh environments requirements. Here, we report an easy-to-excite phonon laser with an ultra-narrow linewidth in silica whispering gallery mode microsphere optomechanical resonators at room temperature and ambient pressure. The microsphere cavity is fabricated by high-temperature melting with a CO2 laser and designed by controlling the proportion of the sphere to the stem (sphere-to-stem ratio) to reduce mechanical damping. By using a single-frequency laser as the pump source, the microsphere optomechanical resonator exhibited multiple breathing mode phonon lasers with ultra-high optical Q-factor (1.78 × 109), mechanical Q-factor (3.1 × 107), and low threshold (2.4 μW). It is the first time to achieve such a high mechanical Q-factor in the microsphere cavity system of this kind to the best of our knowledge, which opens up an avenue to develop highly sensitive sensors.
{"title":"Preparation and controllable tuning of a high-quality factor phonon-laser in the optomechanical microsphere cavity","authors":"rong wang, Wenyao Liu, ziwen pan, Wenjie Fan, Lai Liu, Enbo Xing, Yanru Liu, Jun Tang, Jun Liu","doi":"10.1088/1361-6463/ad07af","DOIUrl":"https://doi.org/10.1088/1361-6463/ad07af","url":null,"abstract":"Low-threshold, narrow linewidth phonon lasers can greatly improve the detection resolution of sensors and have enormous potential for development in classical and quantum sensing fields, as well as information processing. However, its development is limited due to unfavorable factors such as the complex process, low quality factor (Q-factor), difficult tuning, and harsh environments requirements. Here, we report an easy-to-excite phonon laser with an ultra-narrow linewidth in silica whispering gallery mode microsphere optomechanical resonators at room temperature and ambient pressure. The microsphere cavity is fabricated by high-temperature melting with a CO2 laser and designed by controlling the proportion of the sphere to the stem (sphere-to-stem ratio) to reduce mechanical damping. By using a single-frequency laser as the pump source, the microsphere optomechanical resonator exhibited multiple breathing mode phonon lasers with ultra-high optical Q-factor (1.78 × 109), mechanical Q-factor (3.1 × 107), and low threshold (2.4 μW). It is the first time to achieve such a high mechanical Q-factor in the microsphere cavity system of this kind to the best of our knowledge, which opens up an avenue to develop highly sensitive sensors.","PeriodicalId":16833,"journal":{"name":"Journal of Physics D","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136234871","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-10-27DOI: 10.1088/1361-6463/ad07b0
Rupali Jindal, Vaishali Roondhe, Alok Shukla
Abstract With the reported synthesis of a fully planar 2D silicon carbide (SiC) allotrope, the possibilities of its technological applications are enormous. Recently, several authors have computationally studied the structures and electronic properties of a variety of novel infinite periodic SiC monolayers, in addition to the honeycomb one. In this work, we perform a systematic first-principles investigation of the geometry, electronic structure, vibrational, and optical absorption spectra of several finite, but, fully planar structures of SiC, i.e., 0D quantum dots (QDs). The sizes of the studied structures are in the 1.20–2.28 nm range, with their computed HOMO(H)-LUMO(L) gaps ranging from 0.66 eV to 4.09 eV, i.e., from the IR to the UV region of the spectrum. The H-L gaps in the SiC QDs are larger as compared to the band gaps of the corresponding monolayers, confirming the quantum confinement effects. In spite of covalent bonding in the QDs, Mulliken charge analysis reveals that Si atoms exhibit positive charges, whereas the C atoms acquire negative charges, due to the different electron affinities of the two atoms. Furthermore, a strong structure property relationship is observed with fingerprints both in the vibrational and optical spectra. The wide range of H-L gaps in different SiC QDs makes them well-suited for applications in fields such as photocatalysis, light-emitting diodes, and solar cells.
{"title":"A first-principles study of the electronic, vibrational, and optical properties of planar SiC quantum dots","authors":"Rupali Jindal, Vaishali Roondhe, Alok Shukla","doi":"10.1088/1361-6463/ad07b0","DOIUrl":"https://doi.org/10.1088/1361-6463/ad07b0","url":null,"abstract":"Abstract With the reported synthesis of a fully planar 2D silicon carbide (SiC) allotrope, the possibilities of its technological applications are enormous. Recently, several authors have computationally studied the structures and electronic properties of a variety of novel infinite periodic SiC monolayers, in addition to the honeycomb one. In this work, we perform a systematic first-principles investigation of the geometry, electronic structure, vibrational, and optical absorption spectra of several finite, but, fully planar structures of SiC, i.e., 0D quantum dots (QDs). The sizes of the studied structures are in the 1.20–2.28 nm range, with their computed HOMO(H)-LUMO(L) gaps ranging from 0.66 eV to 4.09 eV, i.e., from the IR to the UV region of the spectrum. The H-L gaps in the SiC QDs are larger as compared to the band gaps of the corresponding monolayers, confirming the quantum confinement effects. In spite of covalent bonding in the QDs, Mulliken charge analysis reveals that Si atoms exhibit positive charges, whereas the C atoms acquire negative charges, due to the different electron affinities of the two atoms. Furthermore, a strong structure property relationship is observed with fingerprints both in the vibrational and optical spectra. The wide range of H-L gaps in different SiC QDs makes them well-suited for applications in fields such as photocatalysis, light-emitting diodes, and solar cells.","PeriodicalId":16833,"journal":{"name":"Journal of Physics D","volume":"2 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136234866","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Abstract The excitation and manipulation of symmetry protected bound state in the continuum (SP-BIC) is significantly valuable for metasurface-based biosensors. The interaction between adjacent meta-atoms determines the basic properties of SP-BIC, however, this topic has not been profoundly explored. In this work, we experimentally and numerically investigate the impact of contactless and contact interaction between adjacent dual-gap split-ring resonators (DSRR) on the SP-BIC. We show that there is only one SP-BIC at 0.9 THz when the incident radiation polarization is parallel to the gap in both contactless and contact coupling condition. When the polarization is vertical to the gap, the individual SP-BIC shift the frequency to 0.8 THz under contactless coupling. Under contact coupling, the SP-BIC degrade to be an electromagnetically-induced transparency (EIT) windows at 0.8 THz. We calculated a 3.6 ps group delay slow light for EIT. Numerical simulations indicate that the combination of one magnetic dipole on inner-arm and another electric dipole on outer-arm of DSRR results to quasi-BIC at 0.9 THz and 0.8 THz under contactless coupling. Under contact coupling condition, the formation of quasi-BIC at 0.9 THz is similar to contactless coupling. However, two magnetic dipoles of opposite polarity results in the EIT windows at 0.8 THz. Our results reveal excitation and manipulation of terahertz SP-BIC via contactless and contact coupling which is significant for the innovation of terahertz biosensors.
{"title":"The impact of contact and contactless interaction between the meta-atoms on terahertz bound state in the continuum","authors":"Yonghui Xue, Zhenyu Zhao, Peiliang Liu, Hua Qin, Rajour Tanyi Ako, Sharath Sriram","doi":"10.1088/1361-6463/ad0763","DOIUrl":"https://doi.org/10.1088/1361-6463/ad0763","url":null,"abstract":"Abstract The excitation and manipulation of symmetry protected bound state in the continuum (SP-BIC) is significantly valuable for metasurface-based biosensors. The interaction between adjacent meta-atoms determines the basic properties of SP-BIC, however, this topic has not been profoundly explored. In this work, we experimentally and numerically investigate the impact of contactless and contact interaction between adjacent dual-gap split-ring resonators (DSRR) on the SP-BIC. We show that there is only one SP-BIC at 0.9 THz when the incident radiation polarization is parallel to the gap in both contactless and contact coupling condition. When the polarization is vertical to the gap, the individual SP-BIC shift the frequency to 0.8 THz under contactless coupling. Under contact coupling, the SP-BIC degrade to be an electromagnetically-induced transparency (EIT) windows at 0.8 THz. We calculated a 3.6 ps group delay slow light for EIT. Numerical simulations indicate that the combination of one magnetic dipole on inner-arm and another electric dipole on outer-arm of DSRR results to quasi-BIC at 0.9 THz and 0.8 THz under contactless coupling. Under contact coupling condition, the formation of quasi-BIC at 0.9 THz is similar to contactless coupling. However, two magnetic dipoles of opposite polarity results in the EIT windows at 0.8 THz. Our results reveal excitation and manipulation of terahertz SP-BIC via contactless and contact coupling which is significant for the innovation of terahertz biosensors.","PeriodicalId":16833,"journal":{"name":"Journal of Physics D","volume":"22 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134906988","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Abstract Conventional sidewall gratings in GaN-based distributed feedback (DFB) laser diode have a thick p-type layer, which may cause current spreading and carrier-induced anti-guiding effect, severely deteriorating the laser performance. In this study, we reported a novel fabrication technology to not only reduce the remaining p-type layer in the sidewall gratings, but also realize close-coupled sidewall gratings. Based on this, we further investigated the influence of sidewall grating etching depth on GaN-based DFB laser diodes. The results showed almost unchanged current injection efficiency, nearly coincided I-V curve and near-field emission width for shallow etched structure, which indicated that the current spreading was neglectable in GaN-based ridge structure laser diodes. Based on this analysis, GaN-on-Si DFB LDs with an emission wavelength of 414 nm, FWHM of 22pm, and SMSR of 19.1 dB were realized.
{"title":"Influence of sidewall grating etching depth on GaN-based distributed feedback laser diodes","authors":"Meixin FENG, Chuanjie Li, Yongjun Tang, Jianxun Liu, Xiujian Sun, Qian Sun, Qifa Liu, Ercan YILMAZ, Hui Yang","doi":"10.1088/1361-6463/ad0762","DOIUrl":"https://doi.org/10.1088/1361-6463/ad0762","url":null,"abstract":"Abstract Conventional sidewall gratings in GaN-based distributed feedback (DFB) laser diode have a thick p-type layer, which may cause current spreading and carrier-induced anti-guiding effect, severely deteriorating the laser performance. In this study, we reported a novel fabrication technology to not only reduce the remaining p-type layer in the sidewall gratings, but also realize close-coupled sidewall gratings. Based on this, we further investigated the influence of sidewall grating etching depth on GaN-based DFB laser diodes. The results showed almost unchanged current injection efficiency, nearly coincided I-V curve and near-field emission width for shallow etched structure, which indicated that the current spreading was neglectable in GaN-based ridge structure laser diodes. Based on this analysis, GaN-on-Si DFB LDs with an emission wavelength of 414 nm, FWHM of 22pm, and SMSR of 19.1 dB were realized.","PeriodicalId":16833,"journal":{"name":"Journal of Physics D","volume":"4 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134906973","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-10-26DOI: 10.1088/1361-6463/ad0399
Handong Li, Jianwei Wang, Chanchan Qin, Tao Lei, Fushan Lu, Qi Li
Abstract The traditional metamaterial design process usually relies on some knowledge experience and simulation tools to continuously optimize by trial and error, until the simulation results meet the requirements. But this trial-and-error approach could be more unstable and time-consuming, especially when there are too many material parameters or the optimization interval is too large. This paper proposes a multi-prediction model for metamaterials, Improved-StarGan based on StarGan with semi-supervised learning, and use an EIT structure as a validation object. The generator can output various material structures according to the input spectrum extremes, and the discriminator can forward predict the spectrum extremes based on the input material structure parameters. Spectral normalization, gradient penalty, and hidden space distance regularization are also used to increase the diversity of its output data at the expense of sacrificing a part of the accuracy of the generator. During model training, the loss values of the training and validation sets converge normally and end up in a small range. Finally, the data was extracted from the test set for model prediction and simulation comparison. Meanwhile, a sample of one of the predicted structures is tested. All the results show that the model predictions have low error and high confidence. the results demonstrate that the method is effective in both inverse multiple structure and forward prediction of metamaterials, which provides a new design idea for the structural design of metamaterials.
{"title":"Inverse design of electromagnetically induced transparency metamaterials based on generative adversarial networks","authors":"Handong Li, Jianwei Wang, Chanchan Qin, Tao Lei, Fushan Lu, Qi Li","doi":"10.1088/1361-6463/ad0399","DOIUrl":"https://doi.org/10.1088/1361-6463/ad0399","url":null,"abstract":"Abstract The traditional metamaterial design process usually relies on some knowledge experience and simulation tools to continuously optimize by trial and error, until the simulation results meet the requirements. But this trial-and-error approach could be more unstable and time-consuming, especially when there are too many material parameters or the optimization interval is too large. This paper proposes a multi-prediction model for metamaterials, Improved-StarGan based on StarGan with semi-supervised learning, and use an EIT structure as a validation object. The generator can output various material structures according to the input spectrum extremes, and the discriminator can forward predict the spectrum extremes based on the input material structure parameters. Spectral normalization, gradient penalty, and hidden space distance regularization are also used to increase the diversity of its output data at the expense of sacrificing a part of the accuracy of the generator. During model training, the loss values of the training and validation sets converge normally and end up in a small range. Finally, the data was extracted from the test set for model prediction and simulation comparison. Meanwhile, a sample of one of the predicted structures is tested. All the results show that the model predictions have low error and high confidence. the results demonstrate that the method is effective in both inverse multiple structure and forward prediction of metamaterials, which provides a new design idea for the structural design of metamaterials.","PeriodicalId":16833,"journal":{"name":"Journal of Physics D","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136381629","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-10-25DOI: 10.1088/1361-6463/ad06ec
Maíza Ozório, Rafael J. G. Rubira, Douglas Henrique Vieira, Cibely S. Martin, Carlos José Leopoldo Constantino
Abstract The use of electrolyte-gated transistors (EGTs) as sensors can be an advantageous alternative for the detection of anionic molecules due to their capability to detect various ions in solution. In this study, we explore the potential of EGTs as analytical tools for detecting anionic molecules, utilizing a copper phthalocyanine-3,4′,4″,4″′-tetrasulfonic acid tetrasodium salt (CuTsPc) solution as a proof of concept. The results demonstrate the EGT's capacity in detecting CuTsPc in an aqueous solution, which molecule dissociates into sodium ions (Na+) and CuPc(SO3−)4 ions, leading to high ionic conductivity and the formation of electrical double layers (EDLs). Varying the concentration of the molecule induced alterations in the EDLs, exhibiting good linearity and sensitivity in the transconductance, and a detection limit of 6.0×10-8 mol/L. Transistors employing the CuTsPc solution as electrolyte operated at low voltages and performed better than water-gated transistors (W-GTs). The transconductance (gm) value for EGTs using CuTsPc solution reached 1.93 mS, while for W-GTs it was around 0.10 mS. Thus, the CuTsPc solution not only serves as a target-molecule in sensor measurements, but also demonstrates potential as an electrolyte in EGTs, thereby assuming a dual role within the device. The main advantage of the EGTs as an analytical tool is their use as a multiparameter device that enables the detection of the analytes using different phenomena that occur at the EDLs interface and which, consequently, changes the device's performance.
{"title":"Potential of Electrolyte-Gated Transistors for Anionic Molecule Detection: Proof of Concept Using Dye Solution","authors":"Maíza Ozório, Rafael J. G. Rubira, Douglas Henrique Vieira, Cibely S. Martin, Carlos José Leopoldo Constantino","doi":"10.1088/1361-6463/ad06ec","DOIUrl":"https://doi.org/10.1088/1361-6463/ad06ec","url":null,"abstract":"Abstract The use of electrolyte-gated transistors (EGTs) as sensors can be an advantageous alternative for the detection of anionic molecules due to their capability to detect various ions in solution. In this study, we explore the potential of EGTs as analytical tools for detecting anionic molecules, utilizing a copper phthalocyanine-3,4′,4″,4″′-tetrasulfonic acid tetrasodium salt (CuTsPc) solution as a proof of concept. The results demonstrate the EGT's capacity in detecting CuTsPc in an aqueous solution, which molecule dissociates into sodium ions (Na+) and CuPc(SO3−)4 ions, leading to high ionic conductivity and the formation of electrical double layers (EDLs). Varying the concentration of the molecule induced alterations in the EDLs, exhibiting good linearity and sensitivity in the transconductance, and a detection limit of 6.0×10-8 mol/L. Transistors employing the CuTsPc solution as electrolyte operated at low voltages and performed better than water-gated transistors (W-GTs). The transconductance (gm) value for EGTs using CuTsPc solution reached 1.93 mS, while for W-GTs it was around 0.10 mS. Thus, the CuTsPc solution not only serves as a target-molecule in sensor measurements, but also demonstrates potential as an electrolyte in EGTs, thereby assuming a dual role within the device. The main advantage of the EGTs as an analytical tool is their use as a multiparameter device that enables the detection of the analytes using different phenomena that occur at the EDLs interface and which, consequently, changes the device's performance.&#xD;","PeriodicalId":16833,"journal":{"name":"Journal of Physics D","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135216277","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-10-25DOI: 10.1088/1361-6463/ad06eb
Alex Destrieux, Jacopo Profili, Morgane Laurent, Nicolas Naude, Gaetan Laroche
Abstract In this work, long-time operation of a dielectric barrier discharge (DBD) characterized by a single thin dielectric was investigated. The discharge was operated under nitrogen at atmospheric pressure in a typical filamentary regime. Electrical measurements were performed, i.e., applied voltage, current and charge were retrieved. The Lissajous figure method combined with an equivalent circuit of the DBD was used to calculate the dissipated power, estimate the gas gap voltage V_g, evaluate the deposited charges Q_0 as well as the capacitances of the discharge cell. The results over a one-hour operation indicated that the total dissipated power remained constant, but a decrease of the gas gap voltage with an increase of the charge deposited was also depicted. For the capacitances, both dielectric and cell capacitances variations were studied from the Lissajous figures. The dielectric capacitance showed a voltage dependency over half a period of applied voltage.
{"title":"Evolution of the electrical characteristics of an atmospheric pressure dielectric barrier discharge system over one hour operation","authors":"Alex Destrieux, Jacopo Profili, Morgane Laurent, Nicolas Naude, Gaetan Laroche","doi":"10.1088/1361-6463/ad06eb","DOIUrl":"https://doi.org/10.1088/1361-6463/ad06eb","url":null,"abstract":"Abstract In this work, long-time operation of a dielectric barrier discharge (DBD) characterized by a single thin dielectric was investigated. The discharge was operated under nitrogen at atmospheric pressure in a typical filamentary regime. Electrical measurements were performed, i.e., applied voltage, current and charge were retrieved. The Lissajous figure method combined with an equivalent circuit of the DBD was used to calculate the dissipated power, estimate the gas gap voltage V_g, evaluate the deposited charges Q_0 as well as the capacitances of the discharge cell. The results over a one-hour operation indicated that the total dissipated power remained constant, but a decrease of the gas gap voltage with an increase of the charge deposited was also depicted. For the capacitances, both dielectric and cell capacitances variations were studied from the Lissajous figures. The dielectric capacitance showed a voltage dependency over half a period of applied voltage.","PeriodicalId":16833,"journal":{"name":"Journal of Physics D","volume":"96 1-2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135170886","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-10-23DOI: 10.1088/1361-6463/ad05f4
Yong Zhang, Cheng Hong Zhou, Zhongming Yan, Yu Wang
Abstract The paper introduces a novel design method for an acoustically driven piezoelectric antenna (ADPA) with high radiation performance and broadband characteristics based on energy trapping theory. The reasonableness of the design method is demonstrated by analytically deriving the radiated magnetic field, radiated efficiency and resonant frequency, which are further validated by simulation analysis. Furthermore, a prototype is fabricated and measured, and the results indicate remarkable improvements compared to the non-energy trapping mode, the bandwidth is widened by 10%, the radiation efficiency is increased by 28%, the radiation magnetic field is increased by 3 times, the transmission distance is increased by 2.75 times. The radiation enhancement and multi-band capability of the proposed antenna has been successfully demonstrated. Additionally, we have successfully implemented amplitude modulation (AM) signals transmission using proposed antenna. These results highlight the significant potential of the proposed antenna for portable, miniaturized, and high-performance wireless communication devices.
{"title":"High Radiation Performance and Multi-band Acoustically Driven Piezoelectric Antenna based on Energy Trapping Theory","authors":"Yong Zhang, Cheng Hong Zhou, Zhongming Yan, Yu Wang","doi":"10.1088/1361-6463/ad05f4","DOIUrl":"https://doi.org/10.1088/1361-6463/ad05f4","url":null,"abstract":"Abstract The paper introduces a novel design method for an acoustically driven piezoelectric antenna (ADPA) with high radiation performance and broadband characteristics based on energy trapping theory. The reasonableness of the design method is demonstrated by analytically deriving the radiated magnetic field, radiated efficiency and resonant frequency, which are further validated by simulation analysis. Furthermore, a prototype is fabricated and measured, and the results indicate remarkable improvements compared to the non-energy trapping mode, the bandwidth is widened by 10%, the radiation efficiency is increased by 28%, the radiation magnetic field is increased by 3 times, the transmission distance is increased by 2.75 times. The radiation enhancement and multi-band capability of the proposed antenna has been successfully demonstrated. Additionally, we have successfully implemented amplitude modulation (AM) signals transmission using proposed antenna. These results highlight the significant potential of the proposed antenna for portable, miniaturized, and high-performance wireless communication devices.&#xD;","PeriodicalId":16833,"journal":{"name":"Journal of Physics D","volume":"15 11","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135365954","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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