Pub Date : 2020-01-01DOI: 10.4313/JKEM.2020.33.5.380
Jong-man Park, C. Song, M. Park
{"title":"Design and Analysis of Small Walking Robots Utilizing Piezoelectric Benders","authors":"Jong-man Park, C. Song, M. Park","doi":"10.4313/JKEM.2020.33.5.380","DOIUrl":"https://doi.org/10.4313/JKEM.2020.33.5.380","url":null,"abstract":"","PeriodicalId":17325,"journal":{"name":"Journal of The Korean Institute of Electrical and Electronic Material Engineers","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76448242","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-01-01DOI: 10.4313/JKEM.2020.33.1.21
Oh Byeong-Yun
We investigated a solution-driven Yttrium Tin Oxide (YSnO) film that was imprinted using a parallel nanostructure as a liquid crystal (LC) alignment layer. The imprinting process was conducted at the annealing temperature of 100°C. To evaluate the effect of this process, we conducted surface analyses including atomic force microscopy (AFM). During imprinting, the surface roughness was reduced, and anisotropic characteristics were observed. Planar LC alignment was observed at a pretilt angle of 0.22° on YSnO film. Surface anisotropy induced by imprinting method forces LC to align along the direction of the parallel nanostructure, which is an alternative to conventional polyimide treated using a rubbing process.
{"title":"Homogeneous Liquid Crystal Alignment on Anisotropic YSnO Surface by Imprinting Method","authors":"Oh Byeong-Yun","doi":"10.4313/JKEM.2020.33.1.21","DOIUrl":"https://doi.org/10.4313/JKEM.2020.33.1.21","url":null,"abstract":"We investigated a solution-driven Yttrium Tin Oxide (YSnO) film that was imprinted using a parallel nanostructure as a liquid crystal (LC) alignment layer. The imprinting process was conducted at the annealing temperature of 100°C. To evaluate the effect of this process, we conducted surface analyses including atomic force microscopy (AFM). During imprinting, the surface roughness was reduced, and anisotropic characteristics were observed. Planar LC alignment was observed at a pretilt angle of 0.22° on YSnO film. Surface anisotropy induced by imprinting method forces LC to align along the direction of the parallel nanostructure, which is an alternative to conventional polyimide treated using a rubbing process.","PeriodicalId":17325,"journal":{"name":"Journal of The Korean Institute of Electrical and Electronic Material Engineers","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76087217","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-01-01DOI: 10.4313/JKEM.2020.33.3.173
Lee Geon Hee, B. Ahn, Kang Ey Goo
{"title":"Analysis of Electrical Characteristics According to the Pillar Spacing of 4.5 kV Super Junction IGBT","authors":"Lee Geon Hee, B. Ahn, Kang Ey Goo","doi":"10.4313/JKEM.2020.33.3.173","DOIUrl":"https://doi.org/10.4313/JKEM.2020.33.3.173","url":null,"abstract":"","PeriodicalId":17325,"journal":{"name":"Journal of The Korean Institute of Electrical and Electronic Material Engineers","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87837350","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-01-01DOI: 10.4313/JKEM.2020.33.1.25
Jeong Ji Won, K. Héon, Hyun-yong Lee
Oxide (SiO2)/Metal(Ag)/Oxide(SiO2, ITO, ZnO) multilayer films were fabricated using a magnetron sputtering technique at room temperature on Si (p-type, 100) and a glass substrate. The electrical and optical properties of the asymmetric multilayer films depended on the thickness of the mid-layer film and the type of oxide in the bottom layer. As the metal layer becomes thicker, the sheet resistance decreases. However, the transmittance decreases when the metal layer exceeds a threshold thickness of approximately 10~12 nm. In addition, the sheet resistance and transmittance change according to the type of oxide in the bottom layer. If the oxide has a large resistivity, the overall sheet resistance increases. In addition, the anti-reflection effect changes according to the refractive index of the oxide material. The optical and electrical properties of multilayer films were investigated using an ultraviolet visible (UV-Vis) spectrophotometer and a 4-point probe, respectively. The optimum structure is SiO2 (30 nm)/Ag (10 nm)/ZnO (30 nm) multilayer, with the highest FOM value of 7.7×10 Ω.
{"title":"Characteristics of SiO2 Based Asymmetric Multilayer Thin Films for High Performance Flexible Transparent Electrodes","authors":"Jeong Ji Won, K. Héon, Hyun-yong Lee","doi":"10.4313/JKEM.2020.33.1.25","DOIUrl":"https://doi.org/10.4313/JKEM.2020.33.1.25","url":null,"abstract":"Oxide (SiO2)/Metal(Ag)/Oxide(SiO2, ITO, ZnO) multilayer films were fabricated using a magnetron sputtering technique at room temperature on Si (p-type, 100) and a glass substrate. The electrical and optical properties of the asymmetric multilayer films depended on the thickness of the mid-layer film and the type of oxide in the bottom layer. As the metal layer becomes thicker, the sheet resistance decreases. However, the transmittance decreases when the metal layer exceeds a threshold thickness of approximately 10~12 nm. In addition, the sheet resistance and transmittance change according to the type of oxide in the bottom layer. If the oxide has a large resistivity, the overall sheet resistance increases. In addition, the anti-reflection effect changes according to the refractive index of the oxide material. The optical and electrical properties of multilayer films were investigated using an ultraviolet visible (UV-Vis) spectrophotometer and a 4-point probe, respectively. The optimum structure is SiO2 (30 nm)/Ag (10 nm)/ZnO (30 nm) multilayer, with the highest FOM value of 7.7×10 Ω.","PeriodicalId":17325,"journal":{"name":"Journal of The Korean Institute of Electrical and Electronic Material Engineers","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88035113","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-01-01DOI: 10.4313/JKEM.2020.33.4.271
B. Park, Sun-Keum Kim, Seung-Woo Lee, So Soon-Youl, J. Lee
{"title":"A Study on Characteristics of Liquid-Crystal Based Cell for Smart Window","authors":"B. Park, Sun-Keum Kim, Seung-Woo Lee, So Soon-Youl, J. Lee","doi":"10.4313/JKEM.2020.33.4.271","DOIUrl":"https://doi.org/10.4313/JKEM.2020.33.4.271","url":null,"abstract":"","PeriodicalId":17325,"journal":{"name":"Journal of The Korean Institute of Electrical and Electronic Material Engineers","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91493687","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-01-01DOI: 10.4313/JKEM.2020.33.4.315
Jang-Su Jung, Eom Jiho, S. Pammi, Soon-Gil Yoon
{"title":"Growth of Organic/Inorganic MAPbI3 Perovskite Thin Films via Chemical Vapor Deposition","authors":"Jang-Su Jung, Eom Jiho, S. Pammi, Soon-Gil Yoon","doi":"10.4313/JKEM.2020.33.4.315","DOIUrl":"https://doi.org/10.4313/JKEM.2020.33.4.315","url":null,"abstract":"","PeriodicalId":17325,"journal":{"name":"Journal of The Korean Institute of Electrical and Electronic Material Engineers","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88647411","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-01-01DOI: 10.4313/JKEM.2020.33.6.439
J. Bae, J. Yoo, H. Jee, Jae Hyeong Lee
{"title":"Analysis of Output Characteristics of High-Power Shingled Photovoltaic Module due to Temperature Reduction","authors":"J. Bae, J. Yoo, H. Jee, Jae Hyeong Lee","doi":"10.4313/JKEM.2020.33.6.439","DOIUrl":"https://doi.org/10.4313/JKEM.2020.33.6.439","url":null,"abstract":"","PeriodicalId":17325,"journal":{"name":"Journal of The Korean Institute of Electrical and Electronic Material Engineers","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90108392","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-01-01DOI: 10.4313/JKEM.2020.33.3.219
Kimiksoo, Cho Myung Yeon, Koo, Sang-Mo, Dong-won Lee, Jong‐Min Oh
{"title":"Study of Deposition Mechanism of Al2O3 Films According to Al2O3 Particle Size via Aerosol Deposition Process","authors":"Kimiksoo, Cho Myung Yeon, Koo, Sang-Mo, Dong-won Lee, Jong‐Min Oh","doi":"10.4313/JKEM.2020.33.3.219","DOIUrl":"https://doi.org/10.4313/JKEM.2020.33.3.219","url":null,"abstract":"","PeriodicalId":17325,"journal":{"name":"Journal of The Korean Institute of Electrical and Electronic Material Engineers","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81907394","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Porcelain insulators have been used for a long time in 154 kV power transmission lines. They are likely to be exposed to sudden failure because of product deterioration. This study was conducted to evaluate the quality of porcelain insulators. After stresses were applied, the damaged regions of aged insulators were investigated in terms of chemical composition, material structure, and other properties. For porcelain insulators that were in service for a long time, the mechanical failure load was 126 kN, whereas the average mechanical failure load was 167.3 kN for new products. It was also determined that corrosion occurred at the metal pin part due to the penetration of moisture into the gap between the pin and the ceramic. Statistical analyses of failure were performed to identify the portion of the insulators that were broken. Cristobalite porcelain insulators fabricated without alumina additives had a high failure rate of 54% for the porcelain component. In the case of the addition of Alumina (Al2O3) to the porcelain insulators to improve the strength of the ceramic component, a more frequent damage rate of the cap and pin of 73.3% and 27%, respectively, was observed. This study reports on the material component of SiO2 and the percentage of alumina added, with respect to the mechanical properties of porcelain insulators.
{"title":"Determination of Deterioration and Damage of Porcelain Insulators in Power Transmission Line Through Mechanical Analysis","authors":"Ju-Am Son, I. Choi, Ja-Bin Koo, Kimtaeyong, Seongho Jeon, Youn-jung Lee, Yi, Junsin","doi":"10.4313/JKEM.2020.33.1.50","DOIUrl":"https://doi.org/10.4313/JKEM.2020.33.1.50","url":null,"abstract":"Porcelain insulators have been used for a long time in 154 kV power transmission lines. They are likely to be exposed to sudden failure because of product deterioration. This study was conducted to evaluate the quality of porcelain insulators. After stresses were applied, the damaged regions of aged insulators were investigated in terms of chemical composition, material structure, and other properties. For porcelain insulators that were in service for a long time, the mechanical failure load was 126 kN, whereas the average mechanical failure load was 167.3 kN for new products. It was also determined that corrosion occurred at the metal pin part due to the penetration of moisture into the gap between the pin and the ceramic. Statistical analyses of failure were performed to identify the portion of the insulators that were broken. Cristobalite porcelain insulators fabricated without alumina additives had a high failure rate of 54% for the porcelain component. In the case of the addition of Alumina (Al2O3) to the porcelain insulators to improve the strength of the ceramic component, a more frequent damage rate of the cap and pin of 73.3% and 27%, respectively, was observed. This study reports on the material component of SiO2 and the percentage of alumina added, with respect to the mechanical properties of porcelain insulators.","PeriodicalId":17325,"journal":{"name":"Journal of The Korean Institute of Electrical and Electronic Material Engineers","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82778666","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-01-01DOI: 10.4313/JKEM.2020.33.4.286
JangHyunGyu, W. Kim, M. Oh, Kwon, Soon-Hyung
The formation of inorganic thin films in low-temperature solution processes is necessary for a wide range of commercial applications of organic electronic devices. Aluminum oxide thin films can be utilized as barrier films that prevent the deterioration of an electronic device due to moisture and oxygen in the air. In addition, they can be used as the gate insulating layers of a thin film transistor. In this study, aluminum oxide thin film were formed using two methods simultaneously, a thermal process and the DUV process, and the properties of the thin films were compared. The result of converting aluminum nitrate hydrate to aluminum oxide through a hybrid process using a thermal treatment and DUV was confirmed by XPS measurements. A film-based a-IGZO TFT was fabricated using the formed inorganic thin film as a gate insulating film to confirm its properties.
{"title":"Study of Low Temperature Solution-Processed Al 2 O 3 Gate Insulator by DUV and Thermal Hybrid Treatment","authors":"JangHyunGyu, W. Kim, M. Oh, Kwon, Soon-Hyung","doi":"10.4313/JKEM.2020.33.4.286","DOIUrl":"https://doi.org/10.4313/JKEM.2020.33.4.286","url":null,"abstract":"The formation of inorganic thin films in low-temperature solution processes is necessary for a wide range of commercial applications of organic electronic devices. Aluminum oxide thin films can be utilized as barrier films that prevent the deterioration of an electronic device due to moisture and oxygen in the air. In addition, they can be used as the gate insulating layers of a thin film transistor. In this study, aluminum oxide thin film were formed using two methods simultaneously, a thermal process and the DUV process, and the properties of the thin films were compared. The result of converting aluminum nitrate hydrate to aluminum oxide through a hybrid process using a thermal treatment and DUV was confirmed by XPS measurements. A film-based a-IGZO TFT was fabricated using the formed inorganic thin film as a gate insulating film to confirm its properties.","PeriodicalId":17325,"journal":{"name":"Journal of The Korean Institute of Electrical and Electronic Material Engineers","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87984816","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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