Pub Date : 2020-01-01DOI: 10.4313/JKEM.2020.33.5.344
Park Heyong Gyu, Changsen Song, H. Oh, S. Baik
{"title":"Low Temperature Polycrystalline Silicon Deposition by Atmospheric Pressure Plasma Enhanced CVD Using Metal Foam Showerhead","authors":"Park Heyong Gyu, Changsen Song, H. Oh, S. Baik","doi":"10.4313/JKEM.2020.33.5.344","DOIUrl":"https://doi.org/10.4313/JKEM.2020.33.5.344","url":null,"abstract":"","PeriodicalId":17325,"journal":{"name":"Journal of The Korean Institute of Electrical and Electronic Material Engineers","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78920578","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-01-01DOI: 10.4313/JKEM.2020.33.3.201
Lee Yeji, J. Youn, Sung-Chul Cho, Noh Seongyeo
{"title":"Design for a Fuse of High Durability Protection Elements for Improving the Safety of DC Current Measurement Device","authors":"Lee Yeji, J. Youn, Sung-Chul Cho, Noh Seongyeo","doi":"10.4313/JKEM.2020.33.3.201","DOIUrl":"https://doi.org/10.4313/JKEM.2020.33.3.201","url":null,"abstract":"","PeriodicalId":17325,"journal":{"name":"Journal of The Korean Institute of Electrical and Electronic Material Engineers","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74923301","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-01-01DOI: 10.4313/JKEM.2020.33.4.255
Jae-Sung Lee
{"title":"Modelling of Grain Boundary in Polysilicon Film for Photodetector Through Current-Voltage Analysis","authors":"Jae-Sung Lee","doi":"10.4313/JKEM.2020.33.4.255","DOIUrl":"https://doi.org/10.4313/JKEM.2020.33.4.255","url":null,"abstract":"","PeriodicalId":17325,"journal":{"name":"Journal of The Korean Institute of Electrical and Electronic Material Engineers","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81282659","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-01-01DOI: 10.4313/JKEM.2020.33.4.303
I. Choi, K. Shin, Ho-Sung An, Ja-Bin Koo, Ju-Am Son, Dae-Yeon Lim, Taekeun Oh, Y. Yoon
This study proposes a crack identification algorithm to analyze the surface condition of porcelain insulators and to efficiently visualize cracks. The proposed image processing algorithm for crack identification consists of two primary steps. In the first step, the brightness is eliminated by converting the image to the lab color space. Then, the background is removed by the K-means clustering method. After that, the optimum image treatment is applied using morphological image processing and median filtering to remove unnecessary noise, such as blobs. In the second step, the preprocessed image is converted to grayscale, and any cracks present in the image are identified. Next, the region properties, such as the number of pixels and the ratio of the major to the minor axis, are used to separate the cracks from the noise. Using this image processing algorithm, the precision of crack identification for all the sample images was approximately 80%, and the F1 score was approximately 70. Thus, this method can be helpful for efficient crack monitoring.
{"title":"Development of Image Process for Crack Identification on Porcelain Insulators","authors":"I. Choi, K. Shin, Ho-Sung An, Ja-Bin Koo, Ju-Am Son, Dae-Yeon Lim, Taekeun Oh, Y. Yoon","doi":"10.4313/JKEM.2020.33.4.303","DOIUrl":"https://doi.org/10.4313/JKEM.2020.33.4.303","url":null,"abstract":"This study proposes a crack identification algorithm to analyze the surface condition of porcelain insulators and to efficiently visualize cracks. The proposed image processing algorithm for crack identification consists of two primary steps. In the first step, the brightness is eliminated by converting the image to the lab color space. Then, the background is removed by the K-means clustering method. After that, the optimum image treatment is applied using morphological image processing and median filtering to remove unnecessary noise, such as blobs. In the second step, the preprocessed image is converted to grayscale, and any cracks present in the image are identified. Next, the region properties, such as the number of pixels and the ratio of the major to the minor axis, are used to separate the cracks from the noise. Using this image processing algorithm, the precision of crack identification for all the sample images was approximately 80%, and the F1 score was approximately 70. Thus, this method can be helpful for efficient crack monitoring.","PeriodicalId":17325,"journal":{"name":"Journal of The Korean Institute of Electrical and Electronic Material Engineers","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82479514","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-01-01DOI: 10.4313/JKEM.2020.33.5.367
J. Kwon, Yong-min Jeon, Jiyoung Kim, Eunmyong Lee, Lee Seong Eui
{"title":"Study on Reliability of Vapor Cell by Laser Packaging with Au/Au-Sn Heterojunction","authors":"J. Kwon, Yong-min Jeon, Jiyoung Kim, Eunmyong Lee, Lee Seong Eui","doi":"10.4313/JKEM.2020.33.5.367","DOIUrl":"https://doi.org/10.4313/JKEM.2020.33.5.367","url":null,"abstract":"","PeriodicalId":17325,"journal":{"name":"Journal of The Korean Institute of Electrical and Electronic Material Engineers","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73569993","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-01-01DOI: 10.4313/JKEM.2020.33.4.310
Jin Lee, Hwaseong Kim
{"title":"A Study on the Optimal Flash-Point of WDF Production","authors":"Jin Lee, Hwaseong Kim","doi":"10.4313/JKEM.2020.33.4.310","DOIUrl":"https://doi.org/10.4313/JKEM.2020.33.4.310","url":null,"abstract":"","PeriodicalId":17325,"journal":{"name":"Journal of The Korean Institute of Electrical and Electronic Material Engineers","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90277332","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-01-01DOI: 10.4313/JKEM.2020.33.2.123
An Hyeong-jin, K. Cho
{"title":"Analysis on Current and Optical Characteristics by Electronic Ink Loading Method in Charged Particles Type Display","authors":"An Hyeong-jin, K. Cho","doi":"10.4313/JKEM.2020.33.2.123","DOIUrl":"https://doi.org/10.4313/JKEM.2020.33.2.123","url":null,"abstract":"","PeriodicalId":17325,"journal":{"name":"Journal of The Korean Institute of Electrical and Electronic Material Engineers","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89377020","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-01-01DOI: 10.4313/JKEM.2020.33.3.231
I. Choi, K. Shin, Y. Lim, Ja-Bin Koo, Ju-Am Son, Dae-Yeon Lim, Taekeun Oh, Y. Yoon
{"title":"Analysis on Damage of Porcelain Insulators Using AE Technique","authors":"I. Choi, K. Shin, Y. Lim, Ja-Bin Koo, Ju-Am Son, Dae-Yeon Lim, Taekeun Oh, Y. Yoon","doi":"10.4313/JKEM.2020.33.3.231","DOIUrl":"https://doi.org/10.4313/JKEM.2020.33.3.231","url":null,"abstract":"","PeriodicalId":17325,"journal":{"name":"Journal of The Korean Institute of Electrical and Electronic Material Engineers","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78289391","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-01-01DOI: 10.4313/JKEM.2020.33.1.10
Ji Su Park, W. Oh, L. Hyung
Recently, with the increase in the use of urban solar power, solar modules are required to produce high power in limited areas. In this report, we proposed the fabrication of a high-power photovoltaic module using shingles technology, and developed accurate string characteristic simulations based on circuit modeling. By comparing the resistance components between the interconnected cells and the cell strips, the ECA resistance was determined to be 0.003 Ω. Based on the equivalent circuit of the modeled shingled string, string simulation was performed according to the type of cell strip. As a result, it was determined that the cell efficiency of the 4-cell strip was the highest at 19.66%, but the efficiency of the string simulated with the 6-cell strip was the highest at 20.48% in the string unit.
{"title":"Simulation of Shingled String Characteristics Depending on Cell Strips Type for High Power Photovoltaic Modules","authors":"Ji Su Park, W. Oh, L. Hyung","doi":"10.4313/JKEM.2020.33.1.10","DOIUrl":"https://doi.org/10.4313/JKEM.2020.33.1.10","url":null,"abstract":"Recently, with the increase in the use of urban solar power, solar modules are required to produce high power in limited areas. In this report, we proposed the fabrication of a high-power photovoltaic module using shingles technology, and developed accurate string characteristic simulations based on circuit modeling. By comparing the resistance components between the interconnected cells and the cell strips, the ECA resistance was determined to be 0.003 Ω. Based on the equivalent circuit of the modeled shingled string, string simulation was performed according to the type of cell strip. As a result, it was determined that the cell efficiency of the 4-cell strip was the highest at 19.66%, but the efficiency of the string simulated with the 6-cell strip was the highest at 20.48% in the string unit.","PeriodicalId":17325,"journal":{"name":"Journal of The Korean Institute of Electrical and Electronic Material Engineers","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76268432","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-01-01DOI: 10.4313/JKEM.2020.33.6.433
Sooyeon Bae, Yoon Sojung, Min Dae-hong, Yoon Sung-Min
To enhance the tunneling electroresistance (TER) ratio of a ferroelectric tunnel junction (FTJ) device using Al-doped HfO2 thin films, a thin insulating layer was prepared on a TiN bottom electrode, for which TiN was preliminarily treated at various temperatures in O2 ambient. The composition and thickness of the inserted insulating layer were optimized at 600°C and 50 Torr, and the FTJ showed a high TER ratio of 430. During the heat treatments, a titanium oxide layer formed on the surface of TiN, that suppressed oxygen vacancy generation in the ferroelectric thin film. It was found that the fabricated FTJ device exhibits two distinct resistance states with higher tunneling currents by properly heat-treating the TiN bottom electrode of the HfO2-based FTJ devices in O2 ambient.
{"title":"Variations in Tunnel Electroresistance for Ferroelectric Tunnel Junctions Using Atomic Layer Deposited Al doped HfO 2 Thin Films","authors":"Sooyeon Bae, Yoon Sojung, Min Dae-hong, Yoon Sung-Min","doi":"10.4313/JKEM.2020.33.6.433","DOIUrl":"https://doi.org/10.4313/JKEM.2020.33.6.433","url":null,"abstract":"To enhance the tunneling electroresistance (TER) ratio of a ferroelectric tunnel junction (FTJ) device using Al-doped HfO2 thin films, a thin insulating layer was prepared on a TiN bottom electrode, for which TiN was preliminarily treated at various temperatures in O2 ambient. The composition and thickness of the inserted insulating layer were optimized at 600°C and 50 Torr, and the FTJ showed a high TER ratio of 430. During the heat treatments, a titanium oxide layer formed on the surface of TiN, that suppressed oxygen vacancy generation in the ferroelectric thin film. It was found that the fabricated FTJ device exhibits two distinct resistance states with higher tunneling currents by properly heat-treating the TiN bottom electrode of the HfO2-based FTJ devices in O2 ambient.","PeriodicalId":17325,"journal":{"name":"Journal of The Korean Institute of Electrical and Electronic Material Engineers","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83740679","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：