Pub Date : 1982-12-31DOI: 10.1515/9783112495063-020
A. Kaminskiǐ, S. Saekisov, H. Kürsten, D. Schultze
{"title":"Crystal Growth and Spectroscopic Properties of Nd8+ Ions in Ferroelectric PbsGesOu Crystals","authors":"A. Kaminskiǐ, S. Saekisov, H. Kürsten, D. Schultze","doi":"10.1515/9783112495063-020","DOIUrl":"https://doi.org/10.1515/9783112495063-020","url":null,"abstract":"","PeriodicalId":17793,"journal":{"name":"July 16","volume":"36 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1982-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90586468","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
L. Wielunski, B. Paine, Bai-xin Liu, C. Lien, M. Nicolet
Backscattering spectrometry is used to investigate the depth dependence of NiSi atomic mixing induced by 300 keV Xe+ ions. Nickel films with thicknesses of 40, 64, 68, and 97 nm are deposited on 〈100〉 Si substrates and irradiated at various temperatures. The numbers of metal atoms per unit area mixed with the silicon substrates are calculated from the backscattering spectra. The results show that the ion mixing process takes place at a depth much greater than that of the ion-induced cascade, even at about −180 °C. The temperature dependence of the ion mixing is measured for 64 nm Ni on 〈100〉 Si and for 40 nm Pt on 〈100〉 Si between −180 and 160 °C. The results suggest that the formation of compound phases plays an important role in the atomic mixing, even at −180 °C. La dependance en profondeur du mixage ionique de NiSi induit par des ions Xe+ de 300 keV est etudiee par retrodiffusion coulombienne. Des films de nickel d'epaisseurs 40, 64, 68 et 97 nm ont ete deposes sur un substrat de silicium d'Orientation 〈100〉, a differentes temperatures. Le nombre d'atomes metalliques par unite de surface, melanges avec les substrats de silicium, a ete calcule a partir du spectre de retrodiffusion. Les resultats montrent que le processus de mixage ionique a lieu a une profondeur bien plus grande que celle correspondant au phenomene de cascade, et ce, měme a −180 °C. L'influence de la temperature sur le mixage ionique a ete etudiee pour des films de Ni de 64 et de Pt 40 nm sur un substrat de silicium d'Orientation 〈100〉 entre −180 et 160 °C. Les resultats suggerent que la formation de phases composees joue un rǒle important dans le processus de mixage ionique, et ce, měme a −180 °C.
用后向散射光谱法研究了300 keV Xe+离子诱导NiSi原子混合的深度依赖性。在< 100 > Si衬底上沉积了厚度为40、64、68和97 nm的镍薄膜，并在不同温度下辐照。根据后向散射光谱计算了与硅衬底混合的单位面积金属原子数。结果表明，离子混合过程发生在比离子诱导级联深度大得多的地方，即使在−180℃左右也是如此。在- 180 ~ 160℃范围内，测量了< 100 > Si上64 nm Ni和< 100 > Si上40 nm Pt离子混合的温度依赖性。结果表明，即使在−180℃下，复合相的形成对原子混合也起着重要的作用。杜拉依赖性en profondeur mixage ionique de非绝对的代购契约par des离子Xe + 300 keV est学习par retrodiffusion coulombienne。在不同的温度条件下，制备了40、64、68和97 nm取向镍薄膜，并与取向硅< 100 >衬底进行了对比。原子、金属、液态物、杂化物、基材、硅、粒子、反扩散光谱。结果:montret que le procsus de mixage ionique(混合离子)代替了one proonder bien + grande que cell对应于级联现象，等，温度为- 180°C。L'影响温度的混合离子和实验材料，在< 100 >中心- 180和160°C取向< 100 >的硅衬底下，薄膜的Ni de 64和Pt de 40 nm。这些结果表明，在- 180°C的温度下，混合离子的过程中，组成物的相形成是不确定的。
{"title":"Ion Mixing of Ni and Pt Layers on Si","authors":"L. Wielunski, B. Paine, Bai-xin Liu, C. Lien, M. Nicolet","doi":"10.1002/PSSA.2210720141","DOIUrl":"https://doi.org/10.1002/PSSA.2210720141","url":null,"abstract":"Backscattering spectrometry is used to investigate the depth dependence of NiSi atomic mixing induced by 300 keV Xe+ ions. Nickel films with thicknesses of 40, 64, 68, and 97 nm are deposited on 〈100〉 Si substrates and irradiated at various temperatures. The numbers of metal atoms per unit area mixed with the silicon substrates are calculated from the backscattering spectra. The results show that the ion mixing process takes place at a depth much greater than that of the ion-induced cascade, even at about −180 °C. The temperature dependence of the ion mixing is measured for 64 nm Ni on 〈100〉 Si and for 40 nm Pt on 〈100〉 Si between −180 and 160 °C. The results suggest that the formation of compound phases plays an important role in the atomic mixing, even at −180 °C. \u0000 \u0000 \u0000 \u0000La dependance en profondeur du mixage ionique de NiSi induit par des ions Xe+ de 300 keV est etudiee par retrodiffusion coulombienne. Des films de nickel d'epaisseurs 40, 64, 68 et 97 nm ont ete deposes sur un substrat de silicium d'Orientation 〈100〉, a differentes temperatures. Le nombre d'atomes metalliques par unite de surface, melanges avec les substrats de silicium, a ete calcule a partir du spectre de retrodiffusion. Les resultats montrent que le processus de mixage ionique a lieu a une profondeur bien plus grande que celle correspondant au phenomene de cascade, et ce, měme a −180 °C. L'influence de la temperature sur le mixage ionique a ete etudiee pour des films de Ni de 64 et de Pt 40 nm sur un substrat de silicium d'Orientation 〈100〉 entre −180 et 160 °C. Les resultats suggerent que la formation de phases composees joue un rǒle important dans le processus de mixage ionique, et ce, měme a −180 °C.","PeriodicalId":17793,"journal":{"name":"July 16","volume":"505 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1982-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77346148","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The result of Kambe's adaption of the Ewald summation technique to the layer problem in low-energy electron diffraction is re-derived more directly. The basic idea of the Ewald method (decomposition of s-waves into long-range parts and short-range parts) is employed and applied immediately to the (l, m)-waves which occur in the planar structure constants of a multiple scattering version of LEED theory. Das Ergebnis von Kambes Ubertragung der Ewaldschen Summationsmethode auf das Netzebenenproblem, das in der Theorie der Beugung niederenergetischer Elektronen auftritt, wird auf direktem Weg erhalten. Die Grundidee der Ewald-Methode (Zerlegung von s-Wellen in ihre langreichweitigen und kurzreichweitigen Anteile) wird benutzt und in einer Vielfachstreufassung der LEED-Theorie unmittelbar auf die (l, m)-Wellen in den Strukturkonstanten des Netzebenengitters angewendet.
{"title":"On the Ewald Summation Technique for 2D Lattices","authors":"H. Solbrig","doi":"10.1002/PSSA.2210720120","DOIUrl":"https://doi.org/10.1002/PSSA.2210720120","url":null,"abstract":"The result of Kambe's adaption of the Ewald summation technique to the layer problem in low-energy electron diffraction is re-derived more directly. The basic idea of the Ewald method (decomposition of s-waves into long-range parts and short-range parts) is employed and applied immediately to the (l, m)-waves which occur in the planar structure constants of a multiple scattering version of LEED theory. Das Ergebnis von Kambes Ubertragung der Ewaldschen Summationsmethode auf das Netzebenenproblem, das in der Theorie der Beugung niederenergetischer Elektronen auftritt, wird auf direktem Weg erhalten. Die Grundidee der Ewald-Methode (Zerlegung von s-Wellen in ihre langreichweitigen und kurzreichweitigen Anteile) wird benutzt und in einer Vielfachstreufassung der LEED-Theorie unmittelbar auf die (l, m)-Wellen in den Strukturkonstanten des Netzebenengitters angewendet.","PeriodicalId":17793,"journal":{"name":"July 16","volume":"42 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1982-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84977597","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The crystallization of various amorphous ferromagnets produced by spin quenching techniques is studied by coercive field measurements. The onset of crystallization is studied in detail in isothermal anneals at various temperatures and is found to be a thermally activated process. The activation enthalpies are: 2.3 eV (Fe80B20), 3.2 eV (Fe60Ni20B20), 3.0 eV (Fe40Ni40B20), 3.5 eV (Fe20Ni60B20), and 4.3 eV (Fe40Ni40P14B6). Effects of isochronal annealing on the coercive field of various amorphous alloys are investigated. For several alloys anomalous aging effects are observed. The coercive field shows a maximum at temperatures well below the crystallization regime. The mechanism of the deterioration of soft magnetic properties is very likely a short-range ordering process. This effect leads to a stabilization of domain walls caused by an induced local magnetic anisotropy, which develops during annealing treatments below the Curie temperatures. Mit Messungen des Koerzitivfeldes wird die Kristallisation verschiedener amorpher Ferromagnete untersucht, die mit der Spin-Tilgungstechnik hergestellt wurden. Der Einsatz der Kristallisation wird ausfuhrlich fur isotherme Temperung bei verschiedenen Temperaturen untersucht, wobei gefunden wird, das er einen thermisch aktivierten Prozes darstellt. Die Aktivierungsenthalpien sind: 2,3 eV (Fe80B20); 3.2 eV (Fe60Ni20B20): 3,0 eV (Fe40Ni40B20); 3,5 eV (Fe20Ni60B20) und 4.3 eV (Fe40Ni40P14B6). Die Einflusse einer isochronen Temperung auf das Koerzitivfeld verschiedener amorpher Legierungen wird untersucht. Fur einige Legierungen werden anomale Alterungseffekte beobachtet. Das Koerzitivfeld zeigt ein Maximum bei Temperaturen weit unterhalb des Kristallisationsbereichs. Die Verschlechterung der weich-magnetischen Eigenschaften ist sehr wahrscheinlich bedingt durch einen Nahordnungsprozes. Dieser Effekt fuhrt zu einer Stabilisierung der Domanenwande, die durch eine induzierte lokale magnetische Anisotropie verursacht wird, die sich wahrend der Temperungsbehandlungen unterhalb der Curie-Temperaturen ausbildet.
用矫顽场测量方法研究了自旋淬火技术制备的各种非晶态铁磁体的结晶过程。在不同温度的等温退火中详细研究了结晶的开始，发现结晶是一个热激活过程。激活焓分别为:2.3 eV (Fe80B20)、3.2 eV (Fe60Ni20B20)、3.0 eV (Fe40Ni40B20)、3.5 eV (Fe20Ni60B20)和4.3 eV (Fe40Ni40P14B6)。研究了等时退火对各种非晶合金矫顽力场的影响。对几种合金观察到反常的时效效应。在远低于结晶状态的温度下，矫顽力场达到最大值。软磁性能劣化的机理很可能是一个短程有序过程。在居里温度以下的退火处理过程中，由诱导的局部磁各向异性引起的畴壁稳定。研究方向:铁磁石结晶与非晶化;自旋结晶与非晶化。Der Einsatz Der Kristallisation wind ausfuhrlich fur等温线Temperung bei verschiedenen temperature untersucht，当被称为funden wind时，就被称为derinen thermisch activeerten Prozes darstartel。Die Aktivierungsenthalpien sind: 2,3 eV (Fe80B20);3.2 eV (Fe60Ni20B20): 3,0 eV (Fe40Ni40B20);3,5 eV (Fe20Ni60B20)和4.3 eV (Fe40Ni40P14B6)。[2][1][2][1][2][1][3]。对先天性先天性先天性前列腺癌的研究表明:在最高温度下的Koerzitivfeld重量，在结晶学的范围内。磁特性分析:磁特性分析:磁特性分析:磁特性分析:磁特性分析:磁特性分析。Dieser效应的进一步研究:稳定性研究(稳定化)、局部磁各向异性研究(磁各向异性研究)、温度研究(磁各向异性研究)。
{"title":"Crystallization and Aging Effects in Some Amorphous Ferromagnets","authors":"H. Mehrer, G. Flik, J. Horvath, H. Kronmüller","doi":"10.1002/PSSA.2210720122","DOIUrl":"https://doi.org/10.1002/PSSA.2210720122","url":null,"abstract":"The crystallization of various amorphous ferromagnets produced by spin quenching techniques is studied by coercive field measurements. The onset of crystallization is studied in detail in isothermal anneals at various temperatures and is found to be a thermally activated process. The activation enthalpies are: 2.3 eV (Fe80B20), 3.2 eV (Fe60Ni20B20), 3.0 eV (Fe40Ni40B20), 3.5 eV (Fe20Ni60B20), and 4.3 eV (Fe40Ni40P14B6). Effects of isochronal annealing on the coercive field of various amorphous alloys are investigated. For several alloys anomalous aging effects are observed. The coercive field shows a maximum at temperatures well below the crystallization regime. The mechanism of the deterioration of soft magnetic properties is very likely a short-range ordering process. This effect leads to a stabilization of domain walls caused by an induced local magnetic anisotropy, which develops during annealing treatments below the Curie temperatures. \u0000 \u0000 \u0000 \u0000Mit Messungen des Koerzitivfeldes wird die Kristallisation verschiedener amorpher Ferromagnete untersucht, die mit der Spin-Tilgungstechnik hergestellt wurden. Der Einsatz der Kristallisation wird ausfuhrlich fur isotherme Temperung bei verschiedenen Temperaturen untersucht, wobei gefunden wird, das er einen thermisch aktivierten Prozes darstellt. Die Aktivierungsenthalpien sind: 2,3 eV (Fe80B20); 3.2 eV (Fe60Ni20B20): 3,0 eV (Fe40Ni40B20); 3,5 eV (Fe20Ni60B20) und 4.3 eV (Fe40Ni40P14B6). Die Einflusse einer isochronen Temperung auf das Koerzitivfeld verschiedener amorpher Legierungen wird untersucht. Fur einige Legierungen werden anomale Alterungseffekte beobachtet. Das Koerzitivfeld zeigt ein Maximum bei Temperaturen weit unterhalb des Kristallisationsbereichs. Die Verschlechterung der weich-magnetischen Eigenschaften ist sehr wahrscheinlich bedingt durch einen Nahordnungsprozes. Dieser Effekt fuhrt zu einer Stabilisierung der Domanenwande, die durch eine induzierte lokale magnetische Anisotropie verursacht wird, die sich wahrend der Temperungsbehandlungen unterhalb der Curie-Temperaturen ausbildet.","PeriodicalId":17793,"journal":{"name":"July 16","volume":"60 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1982-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86478511","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Using computer simulation methods, the influence of the structure of the forest dislocations, their flexibility and their ability to react on the transparency of the dislocation forest for the glide dislocations at different dislocation densities are analysed in NaCl and Mg crystals. It is found that provided a considerable number of junctions is formed and the forest flexibility is insignificant, the forest transparency decreases. If the flexibility of the forest dislocation dominates over their ability to form junctions, the dislocation forest transparency increases. It is shown that the forest dislocation displacement and the value of the dislocation junction change in a self-consistent way as the forest dislocation density changes. This self-consistency ensures the fulfilment of the proportionality between the flow stress and the square root of the forest dislocation density. [Russian Text Ignore]
{"title":"Computer Simulation of Dislocation Motion through a Flexible and Reactionable Dislocation Forest of Different Density in NaCl and Mg Crystals","authors":"B. Loginov, A. A. Predvoditelev","doi":"10.1002/PSSA.2210720104","DOIUrl":"https://doi.org/10.1002/PSSA.2210720104","url":null,"abstract":"Using computer simulation methods, the influence of the structure of the forest dislocations, their flexibility and their ability to react on the transparency of the dislocation forest for the glide dislocations at different dislocation densities are analysed in NaCl and Mg crystals. It is found that provided a considerable number of junctions is formed and the forest flexibility is insignificant, the forest transparency decreases. If the flexibility of the forest dislocation dominates over their ability to form junctions, the dislocation forest transparency increases. It is shown that the forest dislocation displacement and the value of the dislocation junction change in a self-consistent way as the forest dislocation density changes. This self-consistency ensures the fulfilment of the proportionality between the flow stress and the square root of the forest dislocation density. \u0000 \u0000 \u0000 \u0000[Russian Text Ignore]","PeriodicalId":17793,"journal":{"name":"July 16","volume":"74 3","pages":""},"PeriodicalIF":0.0,"publicationDate":"1982-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91463250","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Universal and straight-forward formulae to find the coincidence coefficients of two space lattices and their lattice planes are given by means of elementary theory of numbers. The coincidence coefficient of two space lattices is α2 = kk/d3, and that of their lattice planes is α = α2(CH(2)). Eine universelle und direkte Formel zur Auffindung der Koinzidenzkoeffizienten zweier Gitter und ihrer Gitterebenen wird mittels elementarer Zahlentheorie angegeben. Der Koinzidenzkoeffizient zweier Raumgitter betragt α2 = kk/d3 und der ihrer Gitterebenen α = α2(CH(2)).
宇宙拉提斯和两个较大空间的交叉方程计划均由数字基本理论制定。《coincidence coefficient of二号太空lattices是α2 = kk / d3,鞋的形状的lattice计划是α=α2 (f) . (2)以基本数值理论确定两个网格及其位值的共同和直接公式。在一两个Raumgitter Koinzidenzkoeffizient betragtα2 = kk / d3和其Gitterebenenα=α2 (f) . (2)
{"title":"Coincidence Coefficients of Two Space Lattices and Their Lattice Planes","authors":"Q. B. Yang","doi":"10.1002/PSSA.2210720135","DOIUrl":"https://doi.org/10.1002/PSSA.2210720135","url":null,"abstract":"Universal and straight-forward formulae to find the coincidence coefficients of two space lattices and their lattice planes are given by means of elementary theory of numbers. The coincidence coefficient of two space lattices is α2 = kk/d3, and that of their lattice planes is α = α2(CH(2)). \u0000 \u0000 \u0000 \u0000Eine universelle und direkte Formel zur Auffindung der Koinzidenzkoeffizienten zweier Gitter und ihrer Gitterebenen wird mittels elementarer Zahlentheorie angegeben. Der Koinzidenzkoeffizient zweier Raumgitter betragt α2 = kk/d3 und der ihrer Gitterebenen α = α2(CH(2)).","PeriodicalId":17793,"journal":{"name":"July 16","volume":"99 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1982-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80684482","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Composition Changes of NiSi and PtSi Due to Ar+ Ion Bombardment Determined from AES Measurements","authors":"T. Wirth, V. Atzrodt, H. Lange","doi":"10.1002/PSSA.2210720164","DOIUrl":"https://doi.org/10.1002/PSSA.2210720164","url":null,"abstract":"","PeriodicalId":17793,"journal":{"name":"July 16","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1982-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76201418","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The method of IR-absorption is used to study the increase of efficiency of the introduction of vacancy-oxygen (VO) complexes in silicon at electron irradiation with the growth of the concentration of boron and carbon impurities. The dose dependences of the change of concentrations of substitutional carbon, interstitial oxygen, and of CO complexes are obtained. On the basis of results gained a quantitative model is proposed of radiation defect formation in silicon containing sinks for intrinsic interstitial atoms (boron, carbon, and others). The model involves the conception on annihilation of vacancies (V) and interstitial atoms of silicon (I) on defect centers. A numerical calculation of the kinetics of defect formation and of the change of impurity states in silicon under irradiation is made. The kinetic parameters of the processes are found from a comparison of the calculation with experimental data. The values obtained of reaction constants show the possibility of prediction of radiation defects accumulation in silicon with different impurity content. [Russian Text Ignore]
{"title":"Kinetics of Accumulation of Radiation Defects and Annihilation of Vacancies and Interstitials in Carbon- and Boron-Containing Silicon","authors":"V. Akhmetov, V. V. Bolotov","doi":"10.1002/PSSA.2210720103","DOIUrl":"https://doi.org/10.1002/PSSA.2210720103","url":null,"abstract":"The method of IR-absorption is used to study the increase of efficiency of the introduction of vacancy-oxygen (VO) complexes in silicon at electron irradiation with the growth of the concentration of boron and carbon impurities. The dose dependences of the change of concentrations of substitutional carbon, interstitial oxygen, and of CO complexes are obtained. On the basis of results gained a quantitative model is proposed of radiation defect formation in silicon containing sinks for intrinsic interstitial atoms (boron, carbon, and others). The model involves the conception on annihilation of vacancies (V) and interstitial atoms of silicon (I) on defect centers. A numerical calculation of the kinetics of defect formation and of the change of impurity states in silicon under irradiation is made. The kinetic parameters of the processes are found from a comparison of the calculation with experimental data. The values obtained of reaction constants show the possibility of prediction of radiation defects accumulation in silicon with different impurity content. \u0000 \u0000 \u0000 \u0000[Russian Text Ignore]","PeriodicalId":17793,"journal":{"name":"July 16","volume":"4 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1982-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88013789","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
B. P. Chandra, R. D. Verma, A. Jaiswal, B. Majumdar, T. Chandraker, S. V. Deshpande
Mechanoluminescence is studied in halides and other inorganic crystals. All the non-centrosymmetric crystals are mechanoluminescent and all the crystals which do not exhibit mechanoluminescence are centrosymmetric. Certain centrosymmetric crystals also exhibit ML which is comparable in intensity to that of the non-centrosymmetric crystals. The mechanoluminescence spectra of the crystals are reported. The mechanoluminescence spectra of Cs2[Pt(CN)4] · H2O crystals shift towards higher wavelengths as compared to the photoluminescence spectra. The ML activity per mole of the crystals spans four orders of magnitude. Among the alkali halides generally the harder crystals exhibit ML. The correlation of mechanoluminescence with the hardness of the crystals and the earlier disappearance of mechanoluminescence with increasing temperature suggest that the separation of the charged surfaces during the fracture of the crystals should be responsible for the mechanoluminescence excitation. The appearance or non-appearance of mechanoluminescence in centrosymmetric alkali halide crystals may be attributed to the respective ability or inability of cracks to pass through the charged directions of the misoriented regions.
{"title":"Mechanoluminescence of Halides and Other Inorganic Crystals","authors":"B. P. Chandra, R. D. Verma, A. Jaiswal, B. Majumdar, T. Chandraker, S. V. Deshpande","doi":"10.1002/PSSA.2210720137","DOIUrl":"https://doi.org/10.1002/PSSA.2210720137","url":null,"abstract":"Mechanoluminescence is studied in halides and other inorganic crystals. All the non-centrosymmetric crystals are mechanoluminescent and all the crystals which do not exhibit mechanoluminescence are centrosymmetric. Certain centrosymmetric crystals also exhibit ML which is comparable in intensity to that of the non-centrosymmetric crystals. The mechanoluminescence spectra of the crystals are reported. The mechanoluminescence spectra of Cs2[Pt(CN)4] · H2O crystals shift towards higher wavelengths as compared to the photoluminescence spectra. The ML activity per mole of the crystals spans four orders of magnitude. Among the alkali halides generally the harder crystals exhibit ML. The correlation of mechanoluminescence with the hardness of the crystals and the earlier disappearance of mechanoluminescence with increasing temperature suggest that the separation of the charged surfaces during the fracture of the crystals should be responsible for the mechanoluminescence excitation. The appearance or non-appearance of mechanoluminescence in centrosymmetric alkali halide crystals may be attributed to the respective ability or inability of cracks to pass through the charged directions of the misoriented regions.","PeriodicalId":17793,"journal":{"name":"July 16","volume":"55 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1982-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77841565","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A New X-Ray Diffraction Method for Thin Film Thickness Estimation","authors":"H. Hejdová, M. Čermák","doi":"10.1002/PSSA.2210720165","DOIUrl":"https://doi.org/10.1002/PSSA.2210720165","url":null,"abstract":"","PeriodicalId":17793,"journal":{"name":"July 16","volume":"26 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1982-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76163836","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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