Pure anatase TiO2 nanoparticles (P1) and TiO2 doped with 1 % yttrium (Y1), gadolinium (G1) and samarium (S1) were synthesized via the sol-gel method. Memristors were fabricated using spin coated thin films (pure and doped) via magnetron sputtering. An integrated optimization strategy for yttrium, gadolinium, and samarium doped TiO2 spanning the material, thin film and device scales is presented, aiming at the development of customised memristors. Material properties were analysed using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), and UV–Visible spectroscopy while thin films were examined optically. Thickness of thin films varied from 225 to 361 nm. Device performance was assessed through electrical measurements. Doping reduced the crystalline and particle size. G1 and Y1 exhibited the smallest crystalline (6.95 nm) and particle (26.18 nm) sizes respectively. S1, Y1 and G1 nanoparticles exhibited hexagonal, elongated agglomerates and spherical morphologies, with S1 displaying the highest oxygen vacancy. Band gaps decreased upon doping, with the lowest indirect band gap found in S1 (2.905 eV) and the smallest direct band gap observed in G1 (3.152 eV). Among the thin films investigated, S1 exhibited the lowest direct (3.59 eV) and indirect (3.26 eV) band gap energies. Memristors displayed narrow (S1) and wide (Y1) current-voltage hysteresis loops, with time dependent resistance and current variations measured for all devices. This study establishes the first integrated-analysis framework for the fabrication of customised Y, Gd, Sm doped TiO2 memristors. Keywords TiO2; yttrium; gadolinium; samarium; memristor; oxygen vacancy.
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