Pub Date : 2018-05-07DOI: 10.1109/ICMMT.2018.8563588
Yuan-Ying Shen, Yi Zhang, Lei Yang, Xiaopeng Li, Zhonghua Liu, Yin Zhang, Yu-feng Guo
In this paper, a bipolar track-and-hold amplifier(THA), designed in a 0.13um SiGe technology is presented. A novel output buffer is proposed to enhance the hold-isolation and the bandwidth. The spurious free dynamic range (SFDR) is larger than 53.8dB for 1-3GHz input frequency with a 0.6Vpp input signal. The input bandwidth up to 38GHz is realized with a sampling rate of 10GS/s. The total DC power consumption is 586mW with a supply voltage of −5V. The layout size is 339x210 um2. As compared to the advanced silicon-based THAs, this work features high speed, low total harmonic distortion (THD), good linearity and wide bandwidth.
{"title":"A 10GS/s 0.13um SiGe Track-and-Hold Amplifier with 38GHz Analog Bandwidth","authors":"Yuan-Ying Shen, Yi Zhang, Lei Yang, Xiaopeng Li, Zhonghua Liu, Yin Zhang, Yu-feng Guo","doi":"10.1109/ICMMT.2018.8563588","DOIUrl":"https://doi.org/10.1109/ICMMT.2018.8563588","url":null,"abstract":"In this paper, a bipolar track-and-hold amplifier(THA), designed in a 0.13um SiGe technology is presented. A novel output buffer is proposed to enhance the hold-isolation and the bandwidth. The spurious free dynamic range (SFDR) is larger than 53.8dB for 1-3GHz input frequency with a 0.6Vpp input signal. The input bandwidth up to 38GHz is realized with a sampling rate of 10GS/s. The total DC power consumption is 586mW with a supply voltage of −5V. The layout size is 339x210 um2. As compared to the advanced silicon-based THAs, this work features high speed, low total harmonic distortion (THD), good linearity and wide bandwidth.","PeriodicalId":190601,"journal":{"name":"2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133463391","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-05-07DOI: 10.1109/ICMMT.2018.8563907
P. Pu, M. Tang, Junfa Mao
An effective method for the electro-thermal simulation of graphene nanoribbons (GNRs) is presented based on the Boltzmann-Poisson formalism coupled with heat conduction equation (HCE). Firstly, the Boltzmann transport equation (BTE) is solved under the relaxation time approximation (RTA). The power density is then used as the Joule-heating source in HCE to calculate the temperature profile along the GNR. After that, the temperature result is sent back to the BTE for updating the distribution function. This process is iterated until self-consistency is achieved. Using this method, the current-voltage (1-V) characteristic of GNRs is simulated. Self-heating of GNR is examined and is found to be non-negligible under high bias condition.
{"title":"Electro-Thermal Simulation of Graphene Nanoribbons Including Self-Heating Effects","authors":"P. Pu, M. Tang, Junfa Mao","doi":"10.1109/ICMMT.2018.8563907","DOIUrl":"https://doi.org/10.1109/ICMMT.2018.8563907","url":null,"abstract":"An effective method for the electro-thermal simulation of graphene nanoribbons (GNRs) is presented based on the Boltzmann-Poisson formalism coupled with heat conduction equation (HCE). Firstly, the Boltzmann transport equation (BTE) is solved under the relaxation time approximation (RTA). The power density is then used as the Joule-heating source in HCE to calculate the temperature profile along the GNR. After that, the temperature result is sent back to the BTE for updating the distribution function. This process is iterated until self-consistency is achieved. Using this method, the current-voltage (1-V) characteristic of GNRs is simulated. Self-heating of GNR is examined and is found to be non-negligible under high bias condition.","PeriodicalId":190601,"journal":{"name":"2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT)","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134489036","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-05-07DOI: 10.1109/ICMMT.2018.8563891
H. Yin, Zhe Chen, Chao Yu
This paper proposes a novel method for the pattern recognition of radio frequency (RF) power amplifier (PA) behaviors by employing multilayer perceptron. Based on the proposed method, different PA behaviors can be effectively recognized, which is very crucial for PA behavioral modeling and linearization in the dynamical data transmission for the next generation communications systems. Experimental results show that this method can effectively realize the pattern recognition with very high accuracy.
{"title":"Pattern Recognition of RF Power Amplifier Behaviors with Multilayer Perceptron","authors":"H. Yin, Zhe Chen, Chao Yu","doi":"10.1109/ICMMT.2018.8563891","DOIUrl":"https://doi.org/10.1109/ICMMT.2018.8563891","url":null,"abstract":"This paper proposes a novel method for the pattern recognition of radio frequency (RF) power amplifier (PA) behaviors by employing multilayer perceptron. Based on the proposed method, different PA behaviors can be effectively recognized, which is very crucial for PA behavioral modeling and linearization in the dynamical data transmission for the next generation communications systems. Experimental results show that this method can effectively realize the pattern recognition with very high accuracy.","PeriodicalId":190601,"journal":{"name":"2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124960094","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-05-07DOI: 10.1109/ICMMT.2018.8563745
Jia-Jun Liu, Hongxin Xiang, Yuxuan Zhao, Tianling Zhang, Zehong Yan
In this paper, a CTS (continuous transverse stub) antenna array using SIW (substrate integrated waveguide) technology is proposed. The antenna consists of quasi-TEM wave generator, E-plane corporate feeding network and radiation slots. The pillbox structure is used to generate quasi-TEM wave in the oversized rectangular waveguide. Then the energy is divided by E-plane corporate feeding network and fed the radiation slots. From the simulated results, it can be seen that the reflection coefficient is below -10 dB from 22GHz to 28GHz, and gain is about 24.3dBi at 25GHz with the efficiency of 59%.
{"title":"Ka-Band Continuous Transverse Stub Array Based on Substrate Integrated Waveguide","authors":"Jia-Jun Liu, Hongxin Xiang, Yuxuan Zhao, Tianling Zhang, Zehong Yan","doi":"10.1109/ICMMT.2018.8563745","DOIUrl":"https://doi.org/10.1109/ICMMT.2018.8563745","url":null,"abstract":"In this paper, a CTS (continuous transverse stub) antenna array using SIW (substrate integrated waveguide) technology is proposed. The antenna consists of quasi-TEM wave generator, E-plane corporate feeding network and radiation slots. The pillbox structure is used to generate quasi-TEM wave in the oversized rectangular waveguide. Then the energy is divided by E-plane corporate feeding network and fed the radiation slots. From the simulated results, it can be seen that the reflection coefficient is below -10 dB from 22GHz to 28GHz, and gain is about 24.3dBi at 25GHz with the efficiency of 59%.","PeriodicalId":190601,"journal":{"name":"2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130761838","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-05-07DOI: 10.1109/ICMMT.2018.8563752
Weimin Xue, Jiaqi Han, Chang Qiao, Long Li
In this paper, the design of a novel 1-bit digital coding reconfigurable refiectarray using aperture-coupled elements controlled by Pin diodes is presented. The reconfigurable element consists of a microstrip patch, aperture-coupled to a transmission line loaded with two Pin diodes. Each unit cell can be electronically controlled to generate two states with 180° phase difference. The two states can mimic “0” and “1” for 1-bit digital coding. By coding the sequence of “0” and “1” states, the electromagnetic waves can be manipulated to reach different functionalities. Then a $pmb{10times 10}$ elements array is simulated in High Frequency Structure Simulator (HFSS). The full-wave simulations present that scan beams within $pmb{pm 50^{circ}}$ range can be obtained at 10.5GHz. Consistent scan beams can be obtained from 10 to 12GHz.
{"title":"Design of 1-Bit Digital Coding Reconfigurable Reflectarray Using Aperture-Coupled Elements Controlled by PIN Diodes","authors":"Weimin Xue, Jiaqi Han, Chang Qiao, Long Li","doi":"10.1109/ICMMT.2018.8563752","DOIUrl":"https://doi.org/10.1109/ICMMT.2018.8563752","url":null,"abstract":"In this paper, the design of a novel 1-bit digital coding reconfigurable refiectarray using aperture-coupled elements controlled by Pin diodes is presented. The reconfigurable element consists of a microstrip patch, aperture-coupled to a transmission line loaded with two Pin diodes. Each unit cell can be electronically controlled to generate two states with 180° phase difference. The two states can mimic “0” and “1” for 1-bit digital coding. By coding the sequence of “0” and “1” states, the electromagnetic waves can be manipulated to reach different functionalities. Then a $pmb{10times 10}$ elements array is simulated in High Frequency Structure Simulator (HFSS). The full-wave simulations present that scan beams within $pmb{pm 50^{circ}}$ range can be obtained at 10.5GHz. Consistent scan beams can be obtained from 10 to 12GHz.","PeriodicalId":190601,"journal":{"name":"2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132076191","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-05-07DOI: 10.1109/ICMMT.2018.8563681
Shengjie Yang, Hongda Lu, Zhipeng Liu, Y. Liu, Bin Li, X. Lv
Due to the micro-dimension of terahertz devices and antennas, it requires more stringent processing technology. Micro-Electro-Mechanical Systems (MEMS) used to fabricate terahertz functional devices and antennas is a good choice for the high accuracy, good consistence and low cost. In this paper, one approach to obtain antennas and passive devices in terahertz band is proposed, which based on electromagnetic crystal structure and MEMS technology. The band-pass filter, 90° bend waveguide and H-plane horn antenna operating at terahertz band are presented as examples. All of them have good agreement between simulation and measurement.
{"title":"Terahertz Devices with EMXT Structure Fabricated by MEMS","authors":"Shengjie Yang, Hongda Lu, Zhipeng Liu, Y. Liu, Bin Li, X. Lv","doi":"10.1109/ICMMT.2018.8563681","DOIUrl":"https://doi.org/10.1109/ICMMT.2018.8563681","url":null,"abstract":"Due to the micro-dimension of terahertz devices and antennas, it requires more stringent processing technology. Micro-Electro-Mechanical Systems (MEMS) used to fabricate terahertz functional devices and antennas is a good choice for the high accuracy, good consistence and low cost. In this paper, one approach to obtain antennas and passive devices in terahertz band is proposed, which based on electromagnetic crystal structure and MEMS technology. The band-pass filter, 90° bend waveguide and H-plane horn antenna operating at terahertz band are presented as examples. All of them have good agreement between simulation and measurement.","PeriodicalId":190601,"journal":{"name":"2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT)","volume":"147 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116208425","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This paper presents the design and the fabrication of an 8.5-11.5 GHz fully-integrated monolithic microwave integrated circuit (MMIC) power amplifier (PA). Using a low cost $0.25-mu text{m}$ AIGaAs-InGaAs pHEMT process, this three stage PA implemented a reactively matched class AB technique to obtain broadband performance, high gain and high efficiency within a compact size. It was designed by engineering the load and source fundamental impedances for the highest PAE as well as controlling the second harmonic load termination. The measurement results of this PA in the frequency range of 8.5-11.5 GHz show a small-signal gain of 33 dB, a maximum input return loss $(S_{11})$ of - 13 dB, a maximum output return loss $(S_{22})$ of-15 dB, and a 35 dBm output power with the corresponding power added efficiency (PAE) of 45-49% in the CW-mode operation. To the author's knowledge, this is the first GaAs PA ever reported which achieves the combination of efficiency, output power and gain performance in the X-band frequency range.
{"title":"A High-Efficiency 3-Watt GaAs pHEMT X-Band MMIC Power Amplifier","authors":"Yunan Hua, Haifeng Wu, Xuejie Liao, Chengjv Liao, Liu-lin Hu, Jiping Lv","doi":"10.1109/ICMMT.2018.8563604","DOIUrl":"https://doi.org/10.1109/ICMMT.2018.8563604","url":null,"abstract":"This paper presents the design and the fabrication of an 8.5-11.5 GHz fully-integrated monolithic microwave integrated circuit (MMIC) power amplifier (PA). Using a low cost $0.25-mu text{m}$ AIGaAs-InGaAs pHEMT process, this three stage PA implemented a reactively matched class AB technique to obtain broadband performance, high gain and high efficiency within a compact size. It was designed by engineering the load and source fundamental impedances for the highest PAE as well as controlling the second harmonic load termination. The measurement results of this PA in the frequency range of 8.5-11.5 GHz show a small-signal gain of 33 dB, a maximum input return loss $(S_{11})$ of - 13 dB, a maximum output return loss $(S_{22})$ of-15 dB, and a 35 dBm output power with the corresponding power added efficiency (PAE) of 45-49% in the CW-mode operation. To the author's knowledge, this is the first GaAs PA ever reported which achieves the combination of efficiency, output power and gain performance in the X-band frequency range.","PeriodicalId":190601,"journal":{"name":"2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT)","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121700458","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The terahertz mixer is the core component of the terahertz transceiver front-end. In this paper, a 220 GHz broadband sub-harmonic mixer is designed based on global circuit simulation method. Instead of designing the passive circuit part separately by the traditional equivalent circuit method, the global circuit simulation method takes the overall performance of the mixer as the optimization goal, and the entire structure of this mixer is split into the basic transmission unit which can be optimized. The LO frequency is chosen as 110GHz with power 3m W.The simulated results show that the single sideband (SSB) conversion loss of the 220GHz broadband subharmonic mixer is under 9dB in the RF frequency range of 192GHZ-246GHz, the minimum conversion loss is 7.1dB at 221GHz. The global circuit simulation method reduces the conversion loss and the return loss of the mixer, and greatly simplifies the difficulty of designing terahertz mixer. This method can be applied to various terahertz mixers.
{"title":"Design of a 220 GHz Broadband Sub-Harmonic Mixer Based on Global Circuit Simulation Method","authors":"Jianhang Cui, Yong Zhang, Dejiao Xia, Xiaoyun Liu, Chengkai Wu, R. Xu","doi":"10.1109/ICMMT.2018.8563835","DOIUrl":"https://doi.org/10.1109/ICMMT.2018.8563835","url":null,"abstract":"The terahertz mixer is the core component of the terahertz transceiver front-end. In this paper, a 220 GHz broadband sub-harmonic mixer is designed based on global circuit simulation method. Instead of designing the passive circuit part separately by the traditional equivalent circuit method, the global circuit simulation method takes the overall performance of the mixer as the optimization goal, and the entire structure of this mixer is split into the basic transmission unit which can be optimized. The LO frequency is chosen as 110GHz with power 3m W.The simulated results show that the single sideband (SSB) conversion loss of the 220GHz broadband subharmonic mixer is under 9dB in the RF frequency range of 192GHZ-246GHz, the minimum conversion loss is 7.1dB at 221GHz. The global circuit simulation method reduces the conversion loss and the return loss of the mixer, and greatly simplifies the difficulty of designing terahertz mixer. This method can be applied to various terahertz mixers.","PeriodicalId":190601,"journal":{"name":"2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126978326","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-05-07DOI: 10.1109/ICMMT.2018.8563351
Tian Xiuwen, Song Lizhong
This paper designed two kinds of series-fed microstrip patch antenna arrays. For each antenna array, the rectangle patch antenna elements were employed. In order to achieve high gain and the normal radiation pattern, each antenna element should have the same excited amplitude and phase. The radiation performances were realized by use of the proper feeding structure. The discussed antenna arrays were simulated and optimized through full wave electromagnetic simulation software. For the same operational frequency, the two designed microstrip antenna arrays have anticipated working performances. The simulated gains of these two antenna arrays are higher than 11dBi and the simulated voltage standing wave ratio (VS WR) of each antenna array is less than 2 at the working frequency. The simulation results in this paper are provided, which can be used as a technical reference for the practical engineering application.
{"title":"Design and Simulation of the Series-Fed Microstrip Antenna Arrays","authors":"Tian Xiuwen, Song Lizhong","doi":"10.1109/ICMMT.2018.8563351","DOIUrl":"https://doi.org/10.1109/ICMMT.2018.8563351","url":null,"abstract":"This paper designed two kinds of series-fed microstrip patch antenna arrays. For each antenna array, the rectangle patch antenna elements were employed. In order to achieve high gain and the normal radiation pattern, each antenna element should have the same excited amplitude and phase. The radiation performances were realized by use of the proper feeding structure. The discussed antenna arrays were simulated and optimized through full wave electromagnetic simulation software. For the same operational frequency, the two designed microstrip antenna arrays have anticipated working performances. The simulated gains of these two antenna arrays are higher than 11dBi and the simulated voltage standing wave ratio (VS WR) of each antenna array is less than 2 at the working frequency. The simulation results in this paper are provided, which can be used as a technical reference for the practical engineering application.","PeriodicalId":190601,"journal":{"name":"2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114199848","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-05-07DOI: 10.1109/ICMMT.2018.8564004
Chenfeng Li, Xiaowei Zhu
In this paper, a wideband tapered slot antenna (TSA) array using substrate integrated waveguide (SIW) technology is proposed for millimeter wave (MMW) applications. Rectangular corrugation structures are used to reduce side lobe level (SLL) and improve antenna gain. A pair of semicircular notches are inserted to TSA element to expand impedance bandwidth by adding surface current path. Then, a 4-element TSA array is designed and fabricated. Simulated and measured results obtain great agreement. The measured operating band is 33-46.8 GHz (relative bandwidth is 34.5 %) for return loss $< -10mathrm{dB}$. Besides, gain curve has a stable trend at operating band and the maximum gain is 16 dBi at 46 GHz.
{"title":"A SIW-Based Wideband Tapered Slot Antenna (TSA) Array for MMW Applications","authors":"Chenfeng Li, Xiaowei Zhu","doi":"10.1109/ICMMT.2018.8564004","DOIUrl":"https://doi.org/10.1109/ICMMT.2018.8564004","url":null,"abstract":"In this paper, a wideband tapered slot antenna (TSA) array using substrate integrated waveguide (SIW) technology is proposed for millimeter wave (MMW) applications. Rectangular corrugation structures are used to reduce side lobe level (SLL) and improve antenna gain. A pair of semicircular notches are inserted to TSA element to expand impedance bandwidth by adding surface current path. Then, a 4-element TSA array is designed and fabricated. Simulated and measured results obtain great agreement. The measured operating band is 33-46.8 GHz (relative bandwidth is 34.5 %) for return loss $< -10mathrm{dB}$. Besides, gain curve has a stable trend at operating band and the maximum gain is 16 dBi at 46 GHz.","PeriodicalId":190601,"journal":{"name":"2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124453666","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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