Pub Date : 2018-05-07DOI: 10.1109/ICMMT.2018.8563934
Yinchu Liu, F. Xu, K. Wu
The design of a microstrip antenna based on artificial magnetic conductor is presented in this paper. The antenna is composed of a triangular microstrip antenna and with an artificial magnetic conductor made by an uniplanar compact electromagnetic band gap structure. The height of microstrip antenna from the plane of the artificial magnetic conductor is $0.083lambda$. Due to in-phase characteristics, the antenna radiates only in half space with the use of artificial magnetic conductor structure. The size of the antenna is further reduced to meet the requirements of the small electric antenna. The gain is greater than 7.8dB.
{"title":"Gain-Enhanced of Triangular Microstrip Antenna Using Artificial Magnetic Conductor","authors":"Yinchu Liu, F. Xu, K. Wu","doi":"10.1109/ICMMT.2018.8563934","DOIUrl":"https://doi.org/10.1109/ICMMT.2018.8563934","url":null,"abstract":"The design of a microstrip antenna based on artificial magnetic conductor is presented in this paper. The antenna is composed of a triangular microstrip antenna and with an artificial magnetic conductor made by an uniplanar compact electromagnetic band gap structure. The height of microstrip antenna from the plane of the artificial magnetic conductor is $0.083lambda$. Due to in-phase characteristics, the antenna radiates only in half space with the use of artificial magnetic conductor structure. The size of the antenna is further reduced to meet the requirements of the small electric antenna. The gain is greater than 7.8dB.","PeriodicalId":190601,"journal":{"name":"2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122127110","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-05-07DOI: 10.1109/ICMMT.2018.8563773
Guodong Han, Liang Sun, Guodong Yang
A cosecant shaped-beam array antenna with extremely high gain is proposed. This article utilizes an effective synthesis method to design a high gain cosecant beam-forming array antenna. A program for Synthesis of cosecant beam-forming is compiled, using Perturbation alternating projections method for Pattern Synthesis. By employing this method, a huge cosecant beam-forming antenna array of $128 times 16$ units is proposed, which provides an extremely high gain of 42.1dB. This design of given both shaped amplitude and phase of each antenna unit, can be controlled to produce a squared cosecant beam. Absence of amplitude and phase shift distribution graphs, processes of design is illustrated in detail, which generates the shaped pattern. A proposed antenna is designed at the frequency band of 1.44-1.74GHz, and simulated by full-wave analyzer HFSS software to validate the proposed method.
{"title":"Design of High Gain Cosecant Beam-Forming Array Antenna","authors":"Guodong Han, Liang Sun, Guodong Yang","doi":"10.1109/ICMMT.2018.8563773","DOIUrl":"https://doi.org/10.1109/ICMMT.2018.8563773","url":null,"abstract":"A cosecant shaped-beam array antenna with extremely high gain is proposed. This article utilizes an effective synthesis method to design a high gain cosecant beam-forming array antenna. A program for Synthesis of cosecant beam-forming is compiled, using Perturbation alternating projections method for Pattern Synthesis. By employing this method, a huge cosecant beam-forming antenna array of $128 times 16$ units is proposed, which provides an extremely high gain of 42.1dB. This design of given both shaped amplitude and phase of each antenna unit, can be controlled to produce a squared cosecant beam. Absence of amplitude and phase shift distribution graphs, processes of design is illustrated in detail, which generates the shaped pattern. A proposed antenna is designed at the frequency band of 1.44-1.74GHz, and simulated by full-wave analyzer HFSS software to validate the proposed method.","PeriodicalId":190601,"journal":{"name":"2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT)","volume":"91 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121474149","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-05-07DOI: 10.1109/ICMMT.2018.8563444
Sun Ao di, Li Qin
This letter presents a terahertz(THz) multiplier by four using two-stage push-push structure [1]. An 80 GHz Balun and a 160 GHz Balun are implemented by Marchand Balun structure and good performance of amplitude balance and phase balance are achieved as well as low insertion loss. The simulation results show that the output 3dB bandwidth is 70 GHz ranging from 270 GHz to 340 GHz. The quadruapler has a frequency conversion loss less than 13 dB. At the same time, good fundamental rejection greater than 30 dB and low DC power consumption 8 mW are achieved. The whole circuit is designed on 40 nm CMOS technology and occupies area of $pmb{710 mutext{m} times 400mu text{m}}$ including pads.
{"title":"A 320 GHz Frequency Quadrupler Based on 40 nm CMOS Technology","authors":"Sun Ao di, Li Qin","doi":"10.1109/ICMMT.2018.8563444","DOIUrl":"https://doi.org/10.1109/ICMMT.2018.8563444","url":null,"abstract":"This letter presents a terahertz(THz) multiplier by four using two-stage push-push structure [1]. An 80 GHz Balun and a 160 GHz Balun are implemented by Marchand Balun structure and good performance of amplitude balance and phase balance are achieved as well as low insertion loss. The simulation results show that the output 3dB bandwidth is 70 GHz ranging from 270 GHz to 340 GHz. The quadruapler has a frequency conversion loss less than 13 dB. At the same time, good fundamental rejection greater than 30 dB and low DC power consumption 8 mW are achieved. The whole circuit is designed on 40 nm CMOS technology and occupies area of $pmb{710 mutext{m} times 400mu text{m}}$ including pads.","PeriodicalId":190601,"journal":{"name":"2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126543428","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A compact dual-band Chebyshev filtering antenna with controllable bandwidth is developed for coming 5G-band applications. Two stepped-impedance resonators (SIRs), and one Z-shaped monopole antenna are used and integrated to be a filtering antenna. The Z-shaped antenna is excited by a coupled line, which can be treated as an admittance inverter in a filter. The design procedure is discussed in detail using design curves. Dual-band filtering antenna with central frequencies of 3.45 and 4.9 GHz is designed and simulated. Experimental results show that the filtering antenna has a bandwidth of 100/170 MHz and gain of 2.5 dBill.98 dBi in 3.45/4.9 GHz band.
{"title":"Simple and Compact Dual-Band Filtering Antenna for 5G Application","authors":"X. Guan, Hui Su, Baoping Ren, Ping Gui, Chaochao Tao, Shuhai Xie","doi":"10.1109/ICMMT.2018.8563276","DOIUrl":"https://doi.org/10.1109/ICMMT.2018.8563276","url":null,"abstract":"A compact dual-band Chebyshev filtering antenna with controllable bandwidth is developed for coming 5G-band applications. Two stepped-impedance resonators (SIRs), and one Z-shaped monopole antenna are used and integrated to be a filtering antenna. The Z-shaped antenna is excited by a coupled line, which can be treated as an admittance inverter in a filter. The design procedure is discussed in detail using design curves. Dual-band filtering antenna with central frequencies of 3.45 and 4.9 GHz is designed and simulated. Experimental results show that the filtering antenna has a bandwidth of 100/170 MHz and gain of 2.5 dBill.98 dBi in 3.45/4.9 GHz band.","PeriodicalId":190601,"journal":{"name":"2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130886018","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-05-07DOI: 10.1109/ICMMT.2018.8563975
Jiajun Zhang, Dixian Zhao
A broadband low-noise amplifier (LNA) with sub-l dB noise figure (NF), intended for use in millimeter-wave 5G base-stations, have been fabricated in $0.1-mu text{m}$ InGaAs pHEMT technology. Common-source topology with inductive source degeneration is utilized for simultaneous noise and input match. Measurement results show this LNA achieves a gain of 7.9 dB at 24-GHz and a −1 dB bandwidth of 5-GHz, while consuming 13 mW from a 1-V supply. The noise figure is below 1.5 dB from 21-GHz to 27-GHz, with a lowest noise figure of 0.7 dB at 26-GHz.
{"title":"A Broadband 1-dB Noise Figure GaAs Low-Noise Amplifier for Millimeter-Wave 5G Base-Stations","authors":"Jiajun Zhang, Dixian Zhao","doi":"10.1109/ICMMT.2018.8563975","DOIUrl":"https://doi.org/10.1109/ICMMT.2018.8563975","url":null,"abstract":"A broadband low-noise amplifier (LNA) with sub-l dB noise figure (NF), intended for use in millimeter-wave 5G base-stations, have been fabricated in $0.1-mu text{m}$ InGaAs pHEMT technology. Common-source topology with inductive source degeneration is utilized for simultaneous noise and input match. Measurement results show this LNA achieves a gain of 7.9 dB at 24-GHz and a −1 dB bandwidth of 5-GHz, while consuming 13 mW from a 1-V supply. The noise figure is below 1.5 dB from 21-GHz to 27-GHz, with a lowest noise figure of 0.7 dB at 26-GHz.","PeriodicalId":190601,"journal":{"name":"2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125095424","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-05-07DOI: 10.1109/ICMMT.2018.8563798
Hao Feng, Fushun Zhang, Hongyin Zhang
In this paper, a dual polarized Vivaldi antenna with the notched band by the feed line filter on conductive plane is presented. Two Vivaldi antennas are intercrossed vertically to realize dual polarization. Each Vivaldi antenna is placed on the substrate with the size of $pmb{62times 50.5mathrm{mm}^{2}}$. The thickness and relative permittivity of substrate are 0.6 mm and 2.65, respectively. In addition, the front-to-back ratio of the antenna is improved by adding the 160 mm diameter conductive plane below. The notched band is achieved by introducing printed capacitively loaded loop (CLL) resonators close to the feeding line as filter of the Vivaldi antenna. The simulated and measured results demonstrate that the antenna achieves an impedance bandwidth from 2.6 GHz to 14.9 GHz $(mathbf{VSWR} leq 2)$ except the bandwidth of $pmb{6. 0sim 7.5mathrm{GHz}}$.
{"title":"A Dual Polarized Vivaldi Antenna with the Notched Band by Feed Line Filter on Conductive Plane","authors":"Hao Feng, Fushun Zhang, Hongyin Zhang","doi":"10.1109/ICMMT.2018.8563798","DOIUrl":"https://doi.org/10.1109/ICMMT.2018.8563798","url":null,"abstract":"In this paper, a dual polarized Vivaldi antenna with the notched band by the feed line filter on conductive plane is presented. Two Vivaldi antennas are intercrossed vertically to realize dual polarization. Each Vivaldi antenna is placed on the substrate with the size of $pmb{62times 50.5mathrm{mm}^{2}}$. The thickness and relative permittivity of substrate are 0.6 mm and 2.65, respectively. In addition, the front-to-back ratio of the antenna is improved by adding the 160 mm diameter conductive plane below. The notched band is achieved by introducing printed capacitively loaded loop (CLL) resonators close to the feeding line as filter of the Vivaldi antenna. The simulated and measured results demonstrate that the antenna achieves an impedance bandwidth from 2.6 GHz to 14.9 GHz $(mathbf{VSWR} leq 2)$ except the bandwidth of $pmb{6. 0sim 7.5mathrm{GHz}}$.","PeriodicalId":190601,"journal":{"name":"2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT)","volume":"34 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132388285","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-05-07DOI: 10.1109/ICMMT.2018.8563313
Jing Song, Xu Sun, Shuang Wu
Obstacle avoidance technology is critical for Unmanned Aerial Vehicles (UAVs) in kinds of applications. Among several feasible obstacle avoidance technologies, millimeter-wave radar is promising with advantages of high precision, miniaturization, and works in all-day and all-climate. As a key part of the radar system, antenna is required to be operated with high gain, narrow beamwidth, low sidelobe level, and compact in size. In this paper, a 77 GHz millimeter-wave patch antenna array is designed to meet requirements proposed by UAVs obstacle avoidance radar. The designed antenna array is able to provide gain of 31.08 dB with narrow 3-dB beamwidth (8.97° in azimuth and 11.66° in elevation). Moreover, it effectively decreases sidelobe level to -24.5 dB relative to main lobe and uses less radiation elements than regular two-dimensional planar array, which leads to a compact size.
{"title":"Design of 77 GHz Narrow Beamwidth Antenna for UAVs Obstacle Avoidance Radar","authors":"Jing Song, Xu Sun, Shuang Wu","doi":"10.1109/ICMMT.2018.8563313","DOIUrl":"https://doi.org/10.1109/ICMMT.2018.8563313","url":null,"abstract":"Obstacle avoidance technology is critical for Unmanned Aerial Vehicles (UAVs) in kinds of applications. Among several feasible obstacle avoidance technologies, millimeter-wave radar is promising with advantages of high precision, miniaturization, and works in all-day and all-climate. As a key part of the radar system, antenna is required to be operated with high gain, narrow beamwidth, low sidelobe level, and compact in size. In this paper, a 77 GHz millimeter-wave patch antenna array is designed to meet requirements proposed by UAVs obstacle avoidance radar. The designed antenna array is able to provide gain of 31.08 dB with narrow 3-dB beamwidth (8.97° in azimuth and 11.66° in elevation). Moreover, it effectively decreases sidelobe level to -24.5 dB relative to main lobe and uses less radiation elements than regular two-dimensional planar array, which leads to a compact size.","PeriodicalId":190601,"journal":{"name":"2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128093536","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-05-07DOI: 10.1109/ICMMT.2018.8563570
Huaiyu Xiong, Wen-hua Chen, Long Chen, Xiaofan Chen, Zhenghe Feng
In this paper, an Asymmetric Doherty Power Amplifier using Symmetric Devices (ADSD) is proposed for 5G base-station application to improve the back-off efficiency and bandwidth. In the proposed ADSD structure, the main and auxiliary elementary power amplifier (PA) are designed to achieve optimal back-off efficiency and saturated power, respectively. In this way, the overall performance can be improved while the drawbacks caused by utilizing asymmetric devices in conventional asymmetric Doherty Power Amplifier (DPA) are overcome. To verify the proposed theory and design method, an example 3.4-3.6GHz broadband ADSD is designed and fabricated using two 30-Watt transistors. According to the measured results, the ADSD exhibits 50.6%-57.3% Drain Efficiency (DE) at 6-dB power backoff and 54%-62% at saturation over the 200MHz designed bandwidth. Moreover, when stimulated using a 100MHz, 7.5 dB PAPR LTE signal at 3.5 GHz, the fabricated ADSD exhibits 45% average efficiency and 39 dBm output power after linearization while maintaining the Adjacent Channel Leakage Ratio (ACLR) below −47dBc.
{"title":"A High Efficiency Asymmetric Doherty Power Amplifier Using Symmetric Devices for 5G Application","authors":"Huaiyu Xiong, Wen-hua Chen, Long Chen, Xiaofan Chen, Zhenghe Feng","doi":"10.1109/ICMMT.2018.8563570","DOIUrl":"https://doi.org/10.1109/ICMMT.2018.8563570","url":null,"abstract":"In this paper, an Asymmetric Doherty Power Amplifier using Symmetric Devices (ADSD) is proposed for 5G base-station application to improve the back-off efficiency and bandwidth. In the proposed ADSD structure, the main and auxiliary elementary power amplifier (PA) are designed to achieve optimal back-off efficiency and saturated power, respectively. In this way, the overall performance can be improved while the drawbacks caused by utilizing asymmetric devices in conventional asymmetric Doherty Power Amplifier (DPA) are overcome. To verify the proposed theory and design method, an example 3.4-3.6GHz broadband ADSD is designed and fabricated using two 30-Watt transistors. According to the measured results, the ADSD exhibits 50.6%-57.3% Drain Efficiency (DE) at 6-dB power backoff and 54%-62% at saturation over the 200MHz designed bandwidth. Moreover, when stimulated using a 100MHz, 7.5 dB PAPR LTE signal at 3.5 GHz, the fabricated ADSD exhibits 45% average efficiency and 39 dBm output power after linearization while maintaining the Adjacent Channel Leakage Ratio (ACLR) below −47dBc.","PeriodicalId":190601,"journal":{"name":"2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127884783","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A membrane phased array antenna consists of an array antenna and miniaturized transmit/receive (T/R) module is investigated for GEO SAR application. The radiation pattern of the array antenna is analyzed with finite element method (FEM). The T/R module with compact size and light weight is designed and developed. Based on these research, a prototype of the $1 times 4$ element phased array is designed, fabricated and measured. The test results show that the VSWR of the phased array is less than 1.5 from 1.16 GHz to 1.24 GHz, the steering angles is $pm 30^{mathrm{o}}$ in receive and transmit modes, respectively. The calculated results are in good agreement with the experimental results.
{"title":"A Membrane Phased Array Antenna Base on Miniaturized Transmit/Receive Modules for GEO SAR Application","authors":"Mingming Xu, Zheng Lv, Yu Zhu, Yue Zhang, Qingjun Zhang, Jun Liu, X. Lv","doi":"10.1109/ICMMT.2018.8563308","DOIUrl":"https://doi.org/10.1109/ICMMT.2018.8563308","url":null,"abstract":"A membrane phased array antenna consists of an array antenna and miniaturized transmit/receive (T/R) module is investigated for GEO SAR application. The radiation pattern of the array antenna is analyzed with finite element method (FEM). The T/R module with compact size and light weight is designed and developed. Based on these research, a prototype of the $1 times 4$ element phased array is designed, fabricated and measured. The test results show that the VSWR of the phased array is less than 1.5 from 1.16 GHz to 1.24 GHz, the steering angles is $pm 30^{mathrm{o}}$ in receive and transmit modes, respectively. The calculated results are in good agreement with the experimental results.","PeriodicalId":190601,"journal":{"name":"2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129069595","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-05-07DOI: 10.1109/ICMMT.2018.8563701
Xiaoxiang Shen, W. Feng, Haidong Chen, W. Che
A narrowband filtering balun power divider based on substrate integrated waveguide (SIW) and complementary split rings resonators (CSRRs) is proposed in this paper. The middle metal-grand of the SIW filter is used to achieve 180° phase difference. The forward-wave power division propagating below the characteristic cutoff frequency of the waveguide can be easily realized by four complementary split rings resonators. Good in-band performance (amplitude and phase imbalance are less than 0.16 dB and 2°) over the passband are implemented.
{"title":"Narrowband Filtering Balun Power Divider Based on SIW and CSRRs","authors":"Xiaoxiang Shen, W. Feng, Haidong Chen, W. Che","doi":"10.1109/ICMMT.2018.8563701","DOIUrl":"https://doi.org/10.1109/ICMMT.2018.8563701","url":null,"abstract":"A narrowband filtering balun power divider based on substrate integrated waveguide (SIW) and complementary split rings resonators (CSRRs) is proposed in this paper. The middle metal-grand of the SIW filter is used to achieve 180° phase difference. The forward-wave power division propagating below the characteristic cutoff frequency of the waveguide can be easily realized by four complementary split rings resonators. Good in-band performance (amplitude and phase imbalance are less than 0.16 dB and 2°) over the passband are implemented.","PeriodicalId":190601,"journal":{"name":"2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT)","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125384000","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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