Pub Date : 1998-02-22DOI: 10.1109/HTEMDS.1998.730698
P. Mccluskey, R.R. Grybowski, L. Condra, D. Das, J. Fink, J. Jordan, T. Torri
Small signal commercial electronics have traditionally been designed to operate at temperatures below 125/spl deg/C. This has become a severe constraint in the development of next generation smart power electronic systems, such as remote actuators, point-of-use power supplies, and distributed high power control systems. These systems dissipate considerable heat and can operate in environments where the local ambient temperatures reach 200/spl deg/C. The ability to operate these systems without the need for active cooling is seen as a critical technology for the 21st century. The issues involved in designing silicon-based electronic systems for use at temperatures as high as 200/spl deg/C are presented in this work. The critical limiting components and packaging materials have been identified through design analyses conducted on commercially available aeronautic and automotive control modules. It is found that most standard components and packaging elements can be used up to 200/spl deg/C. However, capacitors, wire bonds, eutectic tin-lead solder joints, and FR-4 boards seriously degrade at temperatures around 200/spl deg/C. For these elements, alternative choices are recommended.
{"title":"Reliability concerns in high temperature electronic systems","authors":"P. Mccluskey, R.R. Grybowski, L. Condra, D. Das, J. Fink, J. Jordan, T. Torri","doi":"10.1109/HTEMDS.1998.730698","DOIUrl":"https://doi.org/10.1109/HTEMDS.1998.730698","url":null,"abstract":"Small signal commercial electronics have traditionally been designed to operate at temperatures below 125/spl deg/C. This has become a severe constraint in the development of next generation smart power electronic systems, such as remote actuators, point-of-use power supplies, and distributed high power control systems. These systems dissipate considerable heat and can operate in environments where the local ambient temperatures reach 200/spl deg/C. The ability to operate these systems without the need for active cooling is seen as a critical technology for the 21st century. The issues involved in designing silicon-based electronic systems for use at temperatures as high as 200/spl deg/C are presented in this work. The critical limiting components and packaging materials have been identified through design analyses conducted on commercially available aeronautic and automotive control modules. It is found that most standard components and packaging elements can be used up to 200/spl deg/C. However, capacitors, wire bonds, eutectic tin-lead solder joints, and FR-4 boards seriously degrade at temperatures around 200/spl deg/C. For these elements, alternative choices are recommended.","PeriodicalId":197749,"journal":{"name":"1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132)","volume":"86 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-02-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122950844","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-02-22DOI: 10.1109/HTEMDS.1998.730654
M. Migitaka
In order to develop a silicon IC operating up to and above 450/spl deg/C, integrated injection logic (IIL) was chosen for its peculiar characteristics to high temperature operation. New structures for the IIL were designed through the experimental and theoretical studies of p-n junctions, transistors, and IILs at high temperature. We made Si ICs consisting of nine-stage ILL ring-oscillators by fabrication processes developed by Toyota, where the low temperature epitaxial growth and ion implantation processes were alternately repeated. The first generation IC oscillator made by a 10 /spl mu/m design rule operated from room temperature up to 370/spl deg/C in 1990, the second made by a self-aligned technology increased the maximum operating temperature to 415/spl deg/C in 1991, and the third made by a 5 /spl mu/m design rule increased this temperature to 454/spl deg/C in 1992. New ideas were introduced to the IIL design concept, and the IC fabrication processes were redesigned. In 1994, we succeeded in creating a new IIL structure by this fabrication process, with steps reduced from 52 to 39. The newly developed IC oscillator operated up to a temperature of 462/spl deg/C. Two-bit microcomputers were designed and fabricated using 852 IILs and operated at temperatures from 24 to 265/spl deg/C with a clock frequency of 100 kHz. No failure occurred in more than 1000 hours of operation at a temperature of 250/spl deg/C.
为了开发工作温度高达450/spl℃以上的硅集成电路，选择了集成注入逻辑(IIL)，因为它具有高温工作的特殊特性。通过对p-n结、晶体管和高温下IIL的实验和理论研究，设计了IIL的新结构。我们采用丰田公司开发的制造工艺，交替重复低温外延生长和离子注入过程，制备了由9级ILL环形振荡器组成的硅集成电路。采用10 /spl μ l /m设计规则制造的第一代IC振荡器于1990年在室温下工作至370/spl℃，采用自校准技术制造的第二代IC振荡器于1991年将最高工作温度提高到415/spl℃，采用5/spl μ l /m设计规则制造的第三代IC振荡器于1992年将最高工作温度提高到454/spl℃。在集成电路设计理念中引入了新的思想，并对集成电路的制造工艺进行了重新设计。1994年，我们通过这种制造工艺成功地创造了一个新的IIL结构，将步骤从52减少到39。新开发的IC振荡器工作温度可达462/spl℃。采用852个芯片设计和制造了2位微机，工作温度为24 ~ 265/spl℃，时钟频率为100 kHz。在250/spl℃的温度下运行1000小时以上未发生故障。
{"title":"Study on Si integrated circuits operating up to 462/spl deg/C","authors":"M. Migitaka","doi":"10.1109/HTEMDS.1998.730654","DOIUrl":"https://doi.org/10.1109/HTEMDS.1998.730654","url":null,"abstract":"In order to develop a silicon IC operating up to and above 450/spl deg/C, integrated injection logic (IIL) was chosen for its peculiar characteristics to high temperature operation. New structures for the IIL were designed through the experimental and theoretical studies of p-n junctions, transistors, and IILs at high temperature. We made Si ICs consisting of nine-stage ILL ring-oscillators by fabrication processes developed by Toyota, where the low temperature epitaxial growth and ion implantation processes were alternately repeated. The first generation IC oscillator made by a 10 /spl mu/m design rule operated from room temperature up to 370/spl deg/C in 1990, the second made by a self-aligned technology increased the maximum operating temperature to 415/spl deg/C in 1991, and the third made by a 5 /spl mu/m design rule increased this temperature to 454/spl deg/C in 1992. New ideas were introduced to the IIL design concept, and the IC fabrication processes were redesigned. In 1994, we succeeded in creating a new IIL structure by this fabrication process, with steps reduced from 52 to 39. The newly developed IC oscillator operated up to a temperature of 462/spl deg/C. Two-bit microcomputers were designed and fabricated using 852 IILs and operated at temperatures from 24 to 265/spl deg/C with a clock frequency of 100 kHz. No failure occurred in more than 1000 hours of operation at a temperature of 250/spl deg/C.","PeriodicalId":197749,"journal":{"name":"1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132)","volume":"85 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-02-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124349501","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-02-22DOI: 10.1109/HTEMDS.1998.730635
A. Bakin, S. I. Dorozhkin
The authors' previous and recent studies of defect formation under SiC sublimation growth and of the influence of the sublimation growth conditions on the polytype control and defect formation in 6H-and 4H-SiC crystals and layers have been analyzed and discussed.
{"title":"State-of-the-art in defect control of bulk SiC","authors":"A. Bakin, S. I. Dorozhkin","doi":"10.1109/HTEMDS.1998.730635","DOIUrl":"https://doi.org/10.1109/HTEMDS.1998.730635","url":null,"abstract":"The authors' previous and recent studies of defect formation under SiC sublimation growth and of the influence of the sublimation growth conditions on the polytype control and defect formation in 6H-and 4H-SiC crystals and layers have been analyzed and discussed.","PeriodicalId":197749,"journal":{"name":"1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132)","volume":"453 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-02-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134497308","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-02-22DOI: 10.1109/HTEMDS.1998.730696
I. Golecki, L. Xue, R. Leung, T. Walker, A. Anderson, D. Dewar, C. Duncan, J. Van Horik
Carbon (fiber)-carbon (matrix) composites have the highest thermal conductivity per unit density among materials suitable for thermal management applications. C-C composites also have high toughness and their mechanical strength increases with temperature. We have developed C-C materials and structures for heat management applications at elevated temperatures, using pitch-based fiber preforms. Densities of 2.0-2.2 g/cm/sup 3/, in-plane thermal conductivity of 690 W/m.K and tensile strength of 400 MPa have been measured in thin panels. Structures suitable for thermal management aerospace applications have been fabricated.
{"title":"Properties of high thermal conductivity carbon-carbon composites for thermal management applications","authors":"I. Golecki, L. Xue, R. Leung, T. Walker, A. Anderson, D. Dewar, C. Duncan, J. Van Horik","doi":"10.1109/HTEMDS.1998.730696","DOIUrl":"https://doi.org/10.1109/HTEMDS.1998.730696","url":null,"abstract":"Carbon (fiber)-carbon (matrix) composites have the highest thermal conductivity per unit density among materials suitable for thermal management applications. C-C composites also have high toughness and their mechanical strength increases with temperature. We have developed C-C materials and structures for heat management applications at elevated temperatures, using pitch-based fiber preforms. Densities of 2.0-2.2 g/cm/sup 3/, in-plane thermal conductivity of 690 W/m.K and tensile strength of 400 MPa have been measured in thin panels. Structures suitable for thermal management aerospace applications have been fabricated.","PeriodicalId":197749,"journal":{"name":"1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132)","volume":"36 5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-02-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121162569","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-02-22DOI: 10.1109/HTEMDS.1998.730637
R. C. Clarke, C. Brandt, S. Sriram, R. Siergiej, A. Morse, A. Agarwal, L. Chen, V. Balakrishna, A. Burk
Silicon carbide (SiC) is an emerging semiconductor which has proven to be well suited to high temperature power switching and high-frequency power generation. This paper examines recent advances in materials development and device performance. In boule growth, we have focused on increasing boule diameter and reducing defect counts. Two conductivity types have been developed: (1) undoped semi-insulating for MESFETs, and (2) nitrogen doped highly conducting boules for SITs and power switches. Very uniform planetary multiwafer epitaxial layer growth on these wafers is described, in which specular epitaxial layers have been obtained with growth rates of 3-5 /spl mu/m/hr, exhibiting unintentional n-type doping of /spl sim/1/spl times/10/sup 15/ cm/sup -3/, and associated room temperature Hall mobilities of /spl sim/1000 cm/sup 2//Vs. Controlled n-type doping between /spl sim/5/spl times/10/sup 15/ cm/sup -3/ and >1/spl times/10/sup 18/ cm/sup -3/ has also been demonstrated using nitrogen doping. SiC finds application in high temperature power switching devices and microwave power transistors. MOS turn-off thyristors (MTO/sup TM/) are being investigated as power switches because they offer ease of turn-off, 500/spl deg/C operation and reduced cooling requirements. In the fabrication of high power, high frequency transistors at UHF, L-band, S-band and X-band, SiC has been found superior to both silicon and GaAs. For example, a 4H-SiC UHF television module has demonstrated good signal fidelity at the 2000 W PEP level, S-band transistors have shown 300 W peak power for radar applications, and 6 W power output has been obtained at X-band.
{"title":"Recent advances in high temperature, high frequency SiC devices","authors":"R. C. Clarke, C. Brandt, S. Sriram, R. Siergiej, A. Morse, A. Agarwal, L. Chen, V. Balakrishna, A. Burk","doi":"10.1109/HTEMDS.1998.730637","DOIUrl":"https://doi.org/10.1109/HTEMDS.1998.730637","url":null,"abstract":"Silicon carbide (SiC) is an emerging semiconductor which has proven to be well suited to high temperature power switching and high-frequency power generation. This paper examines recent advances in materials development and device performance. In boule growth, we have focused on increasing boule diameter and reducing defect counts. Two conductivity types have been developed: (1) undoped semi-insulating for MESFETs, and (2) nitrogen doped highly conducting boules for SITs and power switches. Very uniform planetary multiwafer epitaxial layer growth on these wafers is described, in which specular epitaxial layers have been obtained with growth rates of 3-5 /spl mu/m/hr, exhibiting unintentional n-type doping of /spl sim/1/spl times/10/sup 15/ cm/sup -3/, and associated room temperature Hall mobilities of /spl sim/1000 cm/sup 2//Vs. Controlled n-type doping between /spl sim/5/spl times/10/sup 15/ cm/sup -3/ and >1/spl times/10/sup 18/ cm/sup -3/ has also been demonstrated using nitrogen doping. SiC finds application in high temperature power switching devices and microwave power transistors. MOS turn-off thyristors (MTO/sup TM/) are being investigated as power switches because they offer ease of turn-off, 500/spl deg/C operation and reduced cooling requirements. In the fabrication of high power, high frequency transistors at UHF, L-band, S-band and X-band, SiC has been found superior to both silicon and GaAs. For example, a 4H-SiC UHF television module has demonstrated good signal fidelity at the 2000 W PEP level, S-band transistors have shown 300 W peak power for radar applications, and 6 W power output has been obtained at X-band.","PeriodicalId":197749,"journal":{"name":"1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-02-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132107017","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/HTEMDS.1998.730688
D. Schmitz, R. Beccard, E. Woelk, G. Strauch, H. Juergensen
We describe the use of a family of high temperature MOVPE reactors to grow SiC and III-V nitrides such as GaN. The load capacity ranges from single wafer machines to multiple wafer mass production reactors. All of these reactors have a two flow injection system, allowing separated inlet of the various reactants. To achieve maximum growth uniformity, the Gas Foil Rotation/sup R/ principle is applied. The multiwafer reactors are planetary reactors with a double rotation of substrates. Extensive modeling has been used in order to find the optimum reactor geometries. An optimization of uniformity and efficiency and a minimization of undesired parasitic reactions has thus been obtained.
{"title":"High temperature growth of SiC and group III nitride structures in production reactors","authors":"D. Schmitz, R. Beccard, E. Woelk, G. Strauch, H. Juergensen","doi":"10.1109/HTEMDS.1998.730688","DOIUrl":"https://doi.org/10.1109/HTEMDS.1998.730688","url":null,"abstract":"We describe the use of a family of high temperature MOVPE reactors to grow SiC and III-V nitrides such as GaN. The load capacity ranges from single wafer machines to multiple wafer mass production reactors. All of these reactors have a two flow injection system, allowing separated inlet of the various reactants. To achieve maximum growth uniformity, the Gas Foil Rotation/sup R/ principle is applied. The multiwafer reactors are planetary reactors with a double rotation of substrates. Extensive modeling has been used in order to find the optimum reactor geometries. An optimization of uniformity and efficiency and a minimization of undesired parasitic reactions has thus been obtained.","PeriodicalId":197749,"journal":{"name":"1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132)","volume":"93 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125423728","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/HTEMDS.1998.730657
V. Dessard, J. Eggermont, D. Flandre
We have performed low-frequency 1/f noise measurements on thin-film SOI n-MOSFETs up to 250/spl deg/C using a dedicated set-up. We show the superiority of thin-film fully-depleted (FD) SOI n-MOSFETs versus partially-depleted (PD) devices from a noise perspective over temperature. We observe the constancy of 1/f noise with increasing temperature when the device is FD, and observe a new noise contribution which can affect the integrated input referred noise under certain conditions. A first-order explanation is proposed for this additional noise. Results are then compared to the input noise measured on a single stage OTA.
我们使用专用装置对薄膜SOI n- mosfet进行了高达250/spl度/C的低频1/f噪声测量。我们从噪声温度的角度展示了薄膜完全耗尽(FD) SOI n- mosfet与部分耗尽(PD)器件的优越性。我们观察到器件FD时1/f噪声随温度升高的常数，并观察到在一定条件下，一个新的噪声贡献会影响集成输入参考噪声。对这种额外的噪声提出了一种一阶解释。然后将结果与在单级OTA上测量的输入噪声进行比较。
{"title":"Thin-film SOI n-MOSFET low-frequency noise measurements at elevated temperatures","authors":"V. Dessard, J. Eggermont, D. Flandre","doi":"10.1109/HTEMDS.1998.730657","DOIUrl":"https://doi.org/10.1109/HTEMDS.1998.730657","url":null,"abstract":"We have performed low-frequency 1/f noise measurements on thin-film SOI n-MOSFETs up to 250/spl deg/C using a dedicated set-up. We show the superiority of thin-film fully-depleted (FD) SOI n-MOSFETs versus partially-depleted (PD) devices from a noise perspective over temperature. We observe the constancy of 1/f noise with increasing temperature when the device is FD, and observe a new noise contribution which can affect the integrated input referred noise under certain conditions. A first-order explanation is proposed for this additional noise. Results are then compared to the input noise measured on a single stage OTA.","PeriodicalId":197749,"journal":{"name":"1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132)","volume":"87 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115059566","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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